LaB6-based electron beam nanolithography systems suffer from low beam current, resulting in low throughput for nanometer-sized patterns. This drawback is further aggravated by the low sensitivity of the standard high-resolution resist [poly(methylmethacrylate) (PMMA)] and by the reduction of intraproximity effect. We have investigated the lithography aspects (contrast, resolution, exposure latitude, throughput, and statistics) of two-layer resist systems consisting of a sensitive positive electron beam resist poly(3-butenyltrimethylsilane sulfone) (PBTMSS) as the top layer, and a variety of materials such as diamondlike carbon film or polyimide as the bottom layer. In these systems, exposed and developed PBTMSS is first oxidized to SiO2, which masks etching of the bottom layer. The pattern is in turn transferred to the substrate either by wet or dry etching using the bottom layer as a mask. Grating patterns with 0.2- and 0.1-μm pitch can be routinely fabricated on semiconductors, and 0.05-μm pitch patterns have been demonstrated. To achieve such high resolution, a low-strength developer is used, but a throughput about 30 to 50 times higher than that of PMMA can still be obtained. Gratings now can be patterned in a few hours over square-centimeter areas. Such a task would require days for PMMA. Implications of our results on lithography system clock rate and resist resolution–sensitivity tradeoff are also discussed.