Low-energy Electron Diffraction Research Articles

Role of Metal-Oxide Interfaces in Methanol Decomposition: Reaction of Methanol on CeO2/Ag(111) Inverse Model Catalysts.

Metal-oxide interfaces play a critical role in catalytic processes, such as methanol adsorption and decomposition reactions. In this work, we investigated methanol reactions on the inverse model CeO2/Ag(111) catalyst surfaces, i.e., submonolayer CeO2 films on Ag(111), under ultrahigh vacuum (UHV) conditions to specially address the role of CeO2-Ag interface in the catalytic methanol decomposition reactions. Using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and synchrotron radiation photoemission spectroscopy (SRPES), we found that, at the submonolayer ceria coverages, the CeO2 nanoislands exhibit a hexagonal CeO2(111) lattice with fully oxidized Ce4+ on Ag(111). At higher ceria coverages, multilayer ceria nanoislands form on the Ag(111) surface instead of a well-ordered film. A combination of temperature-programmed desorption (TPD) and SRPES reveals that methanol adsorbs dissociatively on the CeO2/Ag(111) surfaces at 110 K, resulting in the formation of methoxy groups. These methoxy groups subsequently decompose via two pathways: (i) interaction with lattice oxygen to produce formate species at 230 K, which then decompose to CO, and (ii) direct dehydrogenation of methoxy to formaldehyde. Notably, the surface with submonolayer CeO2 film on Ag(111) demonstrates low-temperature reactivity (440 K) for methoxy dehydrogenation to formaldehyde, which occurs at a much lower temperature, compared to the surface of multilayer CeO2 on Ag(111) surface (530 K). This finding emphasizes that the CeO2-Ag(111) interfaces provide unique active sites for methoxy dehydrogenation reactions.

Surface structure of Sn doped β-Ga2O3(010) p(1×1) studied by quantitative low energy electron diffraction

We have studied the surface structure of a single crystal β-Ga2O3(010) using quantitative Low Energy Electron Diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). The XPS measurements show spectra typical of stoichiometric Ga2O3 with a clean surface. LEED consistently shows a p(1×1) pattern, free of surface reconstruction. Quantitative LEED I(V) curves are acquired for 41 distinct diffraction spots. The experimental I(V) curves are compared to simulations over the first five layers. The best fits to the experimental LEED I(V) curves acquired at all diffraction spots are then used to calculate the interplanar relaxation and atomic rumpling. Significant atomic rumpling and interplanar relaxation are found over the first 5 atomic layers. As a result of rumpling a polarization of ∼ 2 µC/cm2 develops in the topmost surface layer. The structural results are in good agreement with previous density functional theory calculations and experimental X-ray photoelectron diffraction.

Multiplet XPS analysis of the Mn 2p for Mn3O4 thin films

In this work, we performed a detailed analysis of the x-ray photoemission spectroscopy (XPS) of the Mn 2ppeak for Mn3O4(001) thin films. This is a challenging task since Mn3O4is composed of two different cations, Mn2+at tetrahedral and Mn3+at octahedral sites, which both contribute to the XPS spectra. The oxide spectra consist of many multiplets arising from the angular momentum coupling of the open Mn 2pand 3dshells, thus increasing the spectrums' complexity. Moreover, the energy spacing and intensities of the different multiplets also reflect the covalent mixing between Mn 3dand O 2pshells. However, we show that a detailed analysis, which provides relevant information about the cations in the oxide structure, is possible. We prepared experimentally different Mn3O4films on Au(111), and their structure was monitored with the diffraction pattern obtained with low-energy electron diffraction. The Mn 2pspectra were fit, guided by cluster model theoretical predictions, and checked for films prepared at different oxygen partial pressures. Therefore, we could observe the Mn2+and Mn3+cations' relative concentration in the Mn 2pmains peaks.

Atomic structure of different surface terminations of polycrystalline ZnPd

The intermetallic compound ZnPd has been found to have desirable characteristics as a catalyst for the steam reforming of methanol. The understanding of the surface structure of ZnPd is important to optimize its catalytic behavior. However, due to the lack of bulk single-crystal samples and the complexity of characterizing surface properties in the available polycrystalline samples using common experimental techniques, all previous surface science studies of this compound have been performed on surface alloy samples formed through thin-film deposition. In this study, we present findings on the chemical and atomic structure of the surfaces of bulk polycrystalline ZnPd studied by a variety of complementary experimental techniques, including scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and microspot low-energy electron diffraction (μ-LEED). These experimental techniques, combined with density functional theory (DFT)-based thermodynamic calculations of surface free energy and detachment kinetics at the step edges, confirm that surfaces terminated by atomic layers composed of both Zn and Pd atoms are more stable than those terminated by only Zn or Pd layers. DFT calculations also demonstrate that the primary contribution to the tunneling current arises from Pd atoms, in agreement with the STM results. The formation of intermetallics at surfaces may contribute to the superior catalyst properties of ZnPd over Zn or Pd elemental counterparts. Published by the American Physical Society 2024

Temperature Induced, Reversible Switching of Ferro-Rotational Order Coupled to Superlattice Commensuralibity.

High-quality 1T-TaS2 crystals are investigated by angle-resolved photoelectron spectroscopy, Raman spectroscopy, and low-energy electron diffraction. The Ferro-Rotational Order (FRO) of the charge density wave switches configuration at the transition between the commensurate and the nearly commensurate phase. This process requires samples without built-in or externally induced strain. Moreover, temperature gradients generated by a focused laser beam can be employed in order to freeze the in-plane chirality. Based on such observations, we propose a protocol to obtain durable and nonvolatile state switching of the FRO configuration in bulk 1T-TaS2 crystals.

Bi-intercalated epitaxial graphene on SiC(0001)

Abstract The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). 
As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Epitaxial Growth of Large-Scale α-Phase Antimonene.

Two-dimensional materials composed of elements from the 15th group of the periodic table remain largely unexplored. The primary challenge in advancing this research is the lack of large-scale layers that would facilitate extensive studies using laterally averaging techniques and enable functionalization for the fabrication of novel electronic, optoelectronic, and spintronic devices. In this report, we present a method for synthesizing large-scale antimonene layers, on the order of cm2. By employing molecular beam epitaxy, we successfully grow a monolayer film of α-phase antimonene on a W(110) surface passivated with a single-atom-thick layer of Sb atoms. The formation of α phase antimonene is confirmed through scanning tunneling microscopy and low-energy electron diffraction measurements. The isolated nature of the α-phase is further evidenced in the electronic structure, with linearly dispersed bands observed through angle-resolved photoelectron spectroscopy and supported by ab initio calculations.

Thermal stability of gold films on titanium-adhered silicon substrate

In this study, thermally induced changes in the surface of a thin gold film deposited on Si(100) with a 5 nm thick titanium adhesion layer were investigated. The analysis involved X-ray photoelectron spectroscopy, low-energy electron diffraction, and scanning tunnelling microscopy. The sample was subjected to stepwise annealing under ultra-high vacuum conditions at temperatures ranging from 430 to 1330 K. Low-temperature annealing up to 450 K did not alter the morphology but improved the cleanliness of the gold film surface. Annealing between 530 and 930 K resulted in the disintegration of the gold film, along with mixing and interaction between the sample components. Annealing the sample at 980 K led to the emergence of a gold silicide surface on Si(100) exhibiting the (5 × 3.2)R5.7° reconstruction.

Synthesis of fullerite (100) through epitaxy on a complex intermetallic surface

We report the first epitaxial growth of bulk-like C60(100) plane stabilized by a size-matching effect on the surface of a complex intermetallic compound. As characterized by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) techniques, the adsorption of C60 on Au–Si–Ho(100) surface is disordered at room temperature but ordered when the substrate is held at elevated temperature (669 K). In the submonolayer regime, different superstructures are observed depending on the fullerenes coverage. Upon completion of the first monolayer of C60, the thin film of c(1 × 1) superstructure is structurally equivalent to a (100) surface plane of the face-centered cubic structure of C60 bulk crystal. This structure is unusual for C60 monolayers on metal surfaces and appears to be favored by an almost perfect match between the most preferred C60 intermolecular distance and the distances separating specific adsorption sites of the large unit cell compound. The adsorption site selection is dictated by a local symmetry matching between the pentagonal fullerene facets and pseudo-five-fold symmetric atomic arrangements on the substrate. After the completion of the first monolayer, further deposition of C60 at 387 K results in the growth of a (100) oriented thicker epitaxial fullerite crystal.

In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy

The surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring approaches. In this work, taking the growth of MoSe2 as an example, the distinct growth processes on Al2O3 (112¯0) and Al2O3 (0001) are revealed by parallel monitoring using in situ reflectance anisotropy spectroscopy (RAS) and differential reflectance spectroscopy (DRS), respectively, highlighting the dominant role of the surface symmetry. In our previous study, we found that the RAS signal of MoSe2 grown on Al2O3 (112¯0) initially increased and decreased ultimately to the magnitude of bare Al2O3 (112¯0) when the first layer of MoSe2 was fully merged, which is herein verified by the complementary DRS measurement that is directly related to the film coverage. Consequently, the changing rate of reflectance anisotropy (RA) intensity at 2.5 eV is well matched with the dynamic changes in differential reflectance (DR) intensity. Moreover, the surface-dominated uniform orientation of MoSe2 islands at various stages determined by RAS was further investigated by low-energy electron diffraction (LEED) and atomic force microscopy (AFM). By contrast, the RAS signal of MoSe2 grown on Al2O3 (0001) remains at zero during the whole growth, implying that the discontinuous MoSe2 islands have no preferential orientations. This work demonstrates that the combination of in situ RAS and DRS can provide valuable insights into the growth of unidirectional aligned islands and help optimize the fabrication process for single-crystal transition metal dichalcogenide (TMDC) monolayers.

Spin asymmetry of O 2p –related states in SrTiO3(001)

Atomically clean SrTiO3(001) is characterized by low energy electron diffraction, core level and valence band photoelectron spectroscopy, the latter also with spin resolution. Samples prepared by a sputtering-annealing procedure exhibited in-gap states in the valence band spectra, Ti3+ components in Ti 2p core level spectra and a noticeable spin asymmetry in the 3–9 eV binding energy range, which corresponds to valence states of mainly O 2p character. Upon annealing in oxygen, the spin asymmetry vanishes, accompanied by the intensity decrease of the contribution of titanium low ionization states and of in-gap states, indicating that these three phenomena are mutually connected. The observed spin asymmetry may be generated by indirect exchange mediated by the in-gap states between O 2p orbitals, or by the partial Ti 3d character of these states, which acquire non-zero spin in case of incomplete oxygen coordination.

Dry cleaning of InSb surfaces by hydrogen molecule exposure in ultrahigh vacuum

Cleaning semiconductor surfaces by atomic hydrogen or hydrogen plasma has gained significant interest because such a dry-cleaning method enables to reduce consumption of chemicals and pure water, and to treat challenging surfaces of three-dimensional semiconductor nanostructures. We have studied effects of mere H2 molecule exposures on (111)B and (110) surfaces of InSb with native oxides in an ultrahigh-vacuum (UHV) chamber. Without any hydrogen cracking, exposure of native-oxide covered InSb(111)B, heated simultaneously at 350 °C, to H2 with a partial pressure of 5∙10−5 mbar decreases amount of surface oxides and carbon, according to x-ray photoelectron spectroscopy, and provides (2×2) low-energy electron diffraction (LEED) pattern. Scanning tunneling microscopy indicates that this InSb(111)B(2×2) surface contains still extra Sb. When the InSb temperature increases to 400 °C during the H2 exposure, LEED changes to (3×3) pattern, which is known to arise from a less Sb-rich surface compared to InSb(111)B(2×2). When InSb(111)B(3×3) is exposed to H2 at the lowered temperature of 300 °C, LEED changes back to (2×2), which is discussed to arise from that InSb(111)B(3×3) contains still oxygen. Experiments for InSb(110) support that the found H2 exposure effects apply to different crystal faces of InSb.

Ultra‐Thin Metal Oxide Superstructure of Pd(001) as Passivation Interlayer at Organic/Metal Interface

AbstractAt organic molecule/metal interfaces for electronic applications, it is required of the metal surface to be passivated in view of preserving the molecular properties of the ordered organic layer. This can be achieved by screening the metal with a single atomic layer of O, namely, ultra‐thin metal oxide (UTMO) layers. Cobalt tetraphenylporphyrins (CoTPP) on oxygen passivated Fe(001), with 1 ML O coverage, have revealed a molecule/substrate decoupling effect due to the formation of an ultra‐thin Fe oxide layer at the interface. However, the threshold concentration of surface O required to observe the decoupling effect has not been assessed yet. In this work, the possibility of stabilizing different ultra‐thin Pd oxide superstructures, characterized by a different number of O atoms per unit cell, is exploited to investigate the O decoupling effect on CoTPP films. Two Pd oxide superstructures are considered: Pd(001)‐p(2 × 2)O and Pd(001)‐p(√5 × √5)R27°O, with 0.25 and 0.80 ML O coverages, respectively, which are characterized by low‐energy electron diffraction (LEED), X‐ray and ultra‐violet photoelectron spectroscopies (XPS/UPS) and inverse photoemission spectroscopy (IPES). The results suggest a lower limit of 0.80 ML O coverage as a passivation interlayer to obtain an ordered and decoupled CoTPP monolayer on Pd(001).

Zinc blende ZnS (001) surface structure investigated by XPS, LEED, and DFT

The formation and stability of the zinc blende ZnS (001) single crystal surface have been examined by x-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and density-functional theory (DFT) calculations. LEED patterns obtained from the ZnS (001) surface prepared in ultrahigh vacuum conditions at 1420 K reveal the formation of a (1 × 2) reconstructed structure. Surface chemical characterization performed by XPS indicates that the surface region consists of a Zn-deficient (sulfur-rich) phase. Our DFT theoretical calculations confirm that the ZnS (001) (1x2) surface structure is energetically favorable and consists of a Zn-terminated topmost surface layer stabilized by Zn-vacancies. The calculations also suggest that the remaining Zn-cations on the surface are displaced inward, driven by surface energy minimization related to zinc-blend ZnS (001) polar nature. Notably, the observed surface structural modifications have potential implications for the ZnS physical and chemical properties.

LEED-IV analyses of tellurium adsorbate structures on iridium and gold surfaces

The determination of the configuration of atomic adsorbates on clean metal surfaces has been a key issue in surface science 60 years ago and still is today. We demonstrate that despite the prevalence of combined scanning tunneling microscopy and density functional theory studies of adsorbate systems the pitfalls are plentiful calling for accurate, reliable structure analyses that can be delivered by diffraction methods. We analyze and compare the ordered phases of Te on Ir(111), Ir(100), and Au(100) demonstrating the accuracy, the in-depth information and physical insight that can nowadays be obtained by quantitative low-energy electron diffraction structural analyses.

Electronic and Structural Properties of Thin Iron Oxide Films on CeO2.

Modification of CeO2 (ceria) with 3d transition metals, particularly iron, has been proven to significantly enhance its catalytic efficiency in oxidation or combustion reactions. Although this phenomenon is widely reported, the nature of the iron-ceria interaction responsible for this improvement remains debated. To address this issue, we prepared well-defined model FeOx/CeO2(111) catalytic systems and studied their structure and interfacial electronic properties using photoelectron spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, coupled with density functional theory (DFT) calculations. Our results show that under ultrahigh vacuum conditions, Fe deposition leads to the formation of small FeOx clusters on the ceria surface. Subsequent annealing results in the growth of large amorphous FeOx particles and a 2D FeOx layer. Annealing in an oxygen-rich atmosphere further oxidizes iron up to the Fe3+ state and improves the crystallinity of both the 2D layer and the 3D particles. Our DFT calculations indicate that the 2D FeOx layer interacts strongly with the ceria surface, exhibiting structural corrugations and transferred electrons between Fe2+/Fe3+ and Ce4+/Ce3+ redox pairs. The novel 2D FeOx/CeO2(111) phase may explain the enhancement of the catalytic properties of CeO2 by iron. Moreover, the corrugated 2D FeOx layer can serve as a template for the ordered nucleation of other catalytically active metals, in which the redox properties of the 2D FeOx/CeO2(111) system are exploited to modulate the charge of the supported metals.

On-Surface Chemistry: Probing the Presence of Adatoms on Differently Terminated Surfaces by Porphyrin Metalation

Reactive adsorbates in on-surface reactions and in heterogeneous catalysis on different substrates are of emerging importance. This is for the crucial roles they take in reaction pathways and for their decisive influence on reaction kinetics. [1] The thermally activated 2D mobility [2] of reaction precursors and reactive adatoms as well as their spatial and temporal coincidence at reaction sites is of mechanistic importance for many interface-specific reactions. In our work, we use the well-studied metalation reaction of H2-porphyrins to investigate the action of adatoms on metallic and passivated surface substrates. Porphyrin metalation has been established on atomically clean metallic substrates [3] as well as on metal-oxides [4] and metallic surfaces modified by oxygen [5].We perform spectro-microscopy correlation experiments combining X-ray Photoelectron Spectroscopy, Ultraviolet Photoelectron Spectroscopy, Low Energy Electron Diffraction and Scanning Tunnelling Microscopy on Cl- and N terminated Cu(001). Thereby we find extended layers of adsorbate-induced superstructures that have decisive and contrasting impact on the reactivity of the surface, as well as on molecular self-assembly. The O and N termination of Cu facilitates the metalation reaction and self-assembled domains of CuTPP are formed at room temperature. Cl termination on the contrary, fully inhibits the metalation reaction and causes 2HTPP to assemble into small ‘magic’ clusters.

Surface structure of MOVPE-prepared As-modified Si(100) substrates

In the pursuit of high-efficiency tandem devices for solar energy conversion based on III-V-semiconductors, low-defect III-V nucleation on Si(100) substrates is essential. Here, hydrogen and arsenic are key ingredients in all growth processes with respect to industrially scalable metalorganic vapor phase epitaxy. Our study provides insight into Si(100) surface preparation for the initial stage of III-V nucleation. The samples investigated, prepared on substrates with different offcut angles, show single domain surfaces consisting of rows of preferentially buckled dimers. Low energy electron diffraction and reflection anisotropy spectroscopy confirm well-defined (1 × 2)/(2 × 1) majority domains. Fourier-transform infrared spectroscopy revealed hydrogen bonding to the surface dimers, while no impurities were found by XPS. Density functional theory calculations support the experimental results and reveal a novel surface motif of H-passivated Si-As mixed dimers.

Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption

Gallium nitride (GaN), a wide bandgap semiconductor with absorption and emission in the ultraviolet/visible range, is proposed as an alternative to metallic surfaces for assembling organic molecular structures aiming at optoelectronic applications. However, the formation of a persistent surface oxide layer in air considerably limits the use of GaN for well-defined interfaces. In this work, we have investigated, characterized and processed n-type free-standing c-plane hexagonal wurtzite GaN crystals grown by hydride vapor phase epitaxy and ammonothermal growth methods. Surface cleaning and full removal of the oxide layer on GaN surfaces could be reproducibly achieved via sputtering and annealing cycles, as evidenced by X-ray photoelectron spectroscopy and low-energy electron diffraction. Scanning tunneling microscopy, however, indicated substantial roughening of the GaN surface and the formation of unwanted Ga-rich islands and clusters. Although ammonia (NH3) and bromine (Br) treatments compensated the N/Ga atoms ratio reduced by sputtering, the surface morphology remained rough, exhibiting randomly shaped and distributed hillocks. In addition, we studied the effect of electron bombardment on the surface quality of GaN during NH3 annealing, on-surface debromination and polymerization of 1,3,5-tris(4-bromophenyl) benzene on GaN, and the removal of Ga atoms by Br atoms during the desorption.

Hydroxyl on Stepped Copper and its Interaction with Water.

We describe the hydroxyl and mixed hydroxyl-water structures formed on a stepped copper surface following the reaction of adsorbed O with water at a low temperature and compare them to the structures found previously on plane copper surfaces. Thermal desorption profiles, STM, and low-energy electron diffraction show that water reacts with O at temperatures below 130 K on Cu(511). Two well-defined phases appear as the OH/H2O layer is heated to desorb excess water, a 1OH:1H2O phase and a pure OH phase. The 1OH:1H2O structure consists of 1D chains binding across two adjacent copper steps, with a double period along the step. Electronic structure calculations show that the structure has a zigzag chain of water along the terrace, stabilized by hydrogen bonds to OH groups adsorbed in the step bridge sites. This structure binds OH in its favored site and is similar to the structure observed on other open faces of Cu and Ni, suggesting that this structural arrangement may be common on other surfaces that have steps or rows of close packed metal atoms. The hydroxyl/water chains decompose at 210 K to leave OH adsorbed in the Cu step bridge site, with some forming H-bonded trimers that bridge between two Cu steps. Heating the surface causes hydroxyl to disproportionate near 300 K, desorbing water to leave chemisorbed O.