Low-threshold Vertical-cavity Laser Research Articles

Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers

Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 μm squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8–10 μm devices in the ranges of one to four times threshold. In smaller devices of 4 μm square dimension, the transverse mode at threshold appears as a lowest order mode.