Low-threshold Surface-emitting Lasers Research Articles

Reproducible fabrication of AlGaAs/GaAs circular buried heterostructure (CBH) surface-emitting lasers with low thresholds

The fabrication process for circular buried-heterostructure surface-emitting lasers has been improved to increase the uniformity of the active region diameter. Circular mesas of approximately=8 mu m diameter can now be consistently prepared and low-threshold surface-emitting lasers (30-60 mA at room temperature pulsed conditions) are obtained.