Low Quantum Efficiency Research Articles

Highly and Deep Red-Luminescent Bisphenylamine-Appended Benzocarcogendiazole Fluorophores.

Benzocarcogendiazole units have been frequently utilized for optoelectronics such as organic solar cells because of their robustness, rigidity, and band-gap tunability based on their strong electron-withdrawing properties. Focusing on the luminescent characteristics, these molecules have been utilized to demonstrate highly sensitive chromisms because of the potential of charge transfer. Here, we demonstrate deep red-emissions in bis(4-tert-butylphenyl)amine-appended benzocarcogendiazole-based donor-acceptor-donor (D-A-D) fluorophores, namely 1 and 2. Because benzocarcogendiazole and bis(4-tert-butylphenyl)amine serve as strong electron acceptor and donor, respectively, strong intramolecular charge transfer (ICT) enables long wavelength of photoluminescence (PL) even in the small molecular weight. Although photoluminescence (PL) in long wavelength tends to exhibit quite low absolute PL quantum efficiency (ΦPL), the values of solutions 1 and 2 are quite high (up to 50 %). According to X-ray crystallographic characterizations and DFT calculations, these high ΦPL values are attributable to the segregated π-planes of benzocarcogendiazole units, which is induced by the bulky substituents of bis(4-tert-butylphenyl)amines.

(GaAs/InAs)–GaAsSb digital alloy type-II superlattice for extended short-wavelength infrared detection

GaInAs–GaAsSb type-II superlattices (T2SLs) on an InP substrate are promising candidates for an optical absorption layer in the extended short-wavelength region (2–3 μm), offering more flexibility in designing a cutoff wavelength compared to strained GaInAs bulk material. However, T2SL-based photodetectors inherently suffer from lower quantum efficiency (QE) due to the reduced overlap of the wavefunctions of the conduction and valence bands in the optical matrix element of the T2SL. To improve QE, a (GaAs/InAs)–GaAsSb digital alloy T2SL, which replaces the GaInAs random alloy layer in the GaInAs–GaAsSb T2SL with a GaAs/InAs digital alloy, has been proposed recently by an empirical tight-binding calculation. This paper presents a demonstration of a fabricated photodetector using the (GaAs/InAs)–GaAsSb digital alloy grown on an InP substrate by molecular beam epitaxy and shows that the average QE in the wavelength region of 2.3–2.6 μm is approximately 1.6 times higher than that of a conventional GaInAs–GaAsSb T2SL photodetector. Furthermore, the dark-current density of the digital alloy photodetector is lower than that of the GaInAs–GaAsSb T2SL photodetector despite having a longer cutoff wavelength.

Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection

The rising concentration of greenhouse gases, especially methane and carbon dioxide, is driving global temperature increases and exacerbating the climate crisis. Monitoring these gases requires detectors that operate in the extended short-wavelength infrared range (~2.4 µm), covering methane (1.65 µm) and carbon dioxide (2.05 µm) wavelengths. Here, we present a high-performance linear mode avalanche photodetector (APD) with an InGaAs/GaAsSb type-II superlattice absorber and an AlGaAsSb multiplier, matched to InP substrates. This APD achieves a room temperature gain of 178, an external quantum efficiency of 3560% at 2 µm, low excess noise (less than 2 at gains below 20), and a small temperature coefficient of breakdown (7.58 mV/K·µm). These results indicate that a manufacturable semiconductor material-based APD could significantly advance high-sensitivity receivers for greenhouse gas monitoring, potentially enabling their commercial production and widespread use.

1,5‐Diazocine‐Based Diaryl Ketones: Design, Synthesis, and Optoelectronic Properties

ABSTRACTThree novel heterocyclic host based on diaryl ketone‐tethered 1,5‐diazocines were designed and synthesized for applications in phosphorescent organic light‐emitting diodes (PhOLEDs). The hosts were derived by anchoring the naphthyl ketone (TBN), anthryl ketone (TBA), and phenanthryl ketone (TBP) to the 1,5‐diazocine core. The materials were successfully characterized using spectroscopic techniques. TBN and TBP exhibited low external quantum efficiency of 1.5% and 1.9% when explored as hosts in PhOLED devices. Among the series, TBP exhibited the highest luminance of 4160 cd/m2, maximum luminance efficiency of 6.3 cd/A, and power efficiency of 3.21 lm/w, when doped with Ir(ppy)3 in PhOLED. Nevertheless to our surprise, TBA manifested the lowest device performance than other TBs as a host due to low carrier mobility caused by a highly twisted structure as deciphered from the comparative analysis of single‐crystal structure that could impede carrier transport crucial for efficient electroluminescence. The outcomes of electroluminescence were validated and explained with analysis of single‐crystal structure, and also with the aid of density functional theory.

Highly efficient Y3-xBaxAl5-xSixO12:Cr3+ near-infrared phosphor for plant growth

Near-infrared (NIR) phosphors enhance the growth of plants due to their superior penetration. However, relatively high thermal quenching and low quantum efficiency restrict the development of NIR phosphors. In this study, Y3-xBaxAl5-xSixO12:Cr3+ phosphors (YBAS:Cr3+) with varying concentrations of Ba2+-Si4+ and Cr3+ were studied. The results demonstrate high-purity phases are obtained with doping Ba2+-Si4+ and Cr3+. The Ba2+-Si4+ doping enhances crystallinity and near-spherical particles are synthesized. The theoretical calculations indicate a significant reduction in bandgap with doping Ba2+-Si4+, resulting in impurity levels appearing in the valence band region. The state density calculation shows that the band formation is contributed by all elements. The optimal Ba2+-Si4+ doping concentration is 0.05 mol and the Cr3+ doping content is 0.09 mol. The critical distance (R c ) is 16.62 Å. Dipole–dipole interactions and radiation reabsorptions are main concentration quenching mechanisms. Lattice distortions occur with the introduction of Ba2+-Si4+ and the value (D r ) is 0.052. The YBAS:0.09Cr3+ phosphor shows a crystal field strength with a Dq/B value of 2.76. The phosphor exhibits a high quantum efficiency (73.42%), superior thermal quenching resistance (∼70% initial intensity at 150°C), and a suitable fluorescence lifetime (130.04 µs). A near-infrared pc-LED with YBAS:0.09Cr3+ phosphor displays a high output power of 167.12 mW and a moderate conversion efficiency of 3.82%.

Sensitive SWIR Organic Photodetectors with Spectral Response Reaching 1.5µm.

The performance of organic photodetectors (OPDs) sensitive to the short-wavelength infrared (SWIR) light lags behind commercial indium gallium arsenide (InGaAs) photodetectors primarily due to the scarcity of organic semiconductors with efficient photoelectric responses exceeding 1.3µm. Limited by the Energy-gap law, ultralow-bandgap organic semiconductors usually suffer from severe non-radiative transitions, resulting in low external quantum efficiency (EQE). Herein, a difluoro-substituted quinoid terminal group (QC-2F) with exceptionally strong electron-negativity is developed for constructing a new non-fullerene acceptor (NFA), Y-QC4F with an ultralow bandgap of 0.83eV. This subtle structural modification significantly enhances intermolecular packing order and density, enabling an absorption onset up to 1.5µm while suppressing non-radiation recombination in Y-QC4F films. SWIR OPDs based on Y-QC4F achieve an impressive detectivity (D*) over 1011 Jones from 0.4 to 1.5µm under 0V bias, with a maximum of 1.68 × 1012 Jones at 1.16µm. Furthermore, the resulting OPDs demonstrate competitive performance with commercial photodetectors for high-quality SWIR imaging even under 1.4µm irradiation.

Enhancing the Efficiency of Flexible, Large-Area, ITO-Free Organic Photovoltaic Devices.

The development of flexible ITO-free devices is crucial for the industrial advancement of organic photovoltaic (OPV) technology. Here, a novel ITO-free device architecture is proposed, and ITO-free OPV devices are realized on glass substrates with performance comparable to that of ITO-based devices. It is also demonstrated that the performance of ITO-free devices on polyethylene terephthalate (PET) substrates is limited due to the higher surface roughness of PET, leading to high voltage losses, low device quantum efficiency, and high device leakage current. To address the issue of high roughness on the PET surface, a polyimide (PI) modification strategy is developed and the PI-modified PET is employed as the substrate to construct flexible ITO-free OPV devices and large-area modules with an active area of up to 16.5cm2. This approach leads to decreased trap-assisted recombination losses, enhanced exciton dissociation efficiency, and a reduced density of pinholes in flexible OPV devices, resulting in improved photovoltaic performance under both strong and weak illumination conditions. The outcomes of this work are expected to advance the industrial development of flexible organic photovoltaic technology.

Photochemical phosphorus-enabled scaffold remodeling of carboxylic acids.

The excitation of carbonyl compounds by light to generate radical intermediates has historically been restricted to ketones and aldehydes; carboxylic acids have been overlooked because of high energy requirements and low quantum efficiency. A successful activation strategy would necessitate a bathochromic shift in the absorbance profile, an increase in triplet diradical lifetime, and ease of further functionalization. We present a single-flask transformation of carboxylic acids to acyl phosphonates that can access synthetically useful triplet diradicals under visible light or near-ultraviolet irradiation. The use of phosphorus circumvents unproductive Norrish type I processes, promoting selectivity that enables hydrogen-atom transfer reactivity. Use of this strategy promotes the efficient scaffold remodeling of carboxylic acids through various annulation, contraction, and expansion manifolds.

Internal quantum efficiency improvement of InGaN-based red LED by using double V-pits layers as strain relief layer

Micro/mini light emitting diodes (LEDs) based on AlInGaN material system have vast potential in display applications. Nevertheless, the low internal quantum efficiency (IQE) of InGaN-based red LED limits its development and application. In the epitaxial structure of our designed red LED, double V-pits layers were used as strain relief layers to reduce compressive strain and improve the IQE of the active layer. First, InGaN/GaN superlattices (SLs) were grown below the active layer to form low-density large V-pits layer. Subsequently, multi-period green and red composite quantum wells were adopted as the active layer. A high-density small V-pits layer was introduced into the active region to release the compressive strain by adjusting the growth parameters of green multiple quantum wells (MQWs). The V-shaped pits divide the continuous large-area of active layer into mutually isolated small pieces, which prevents the transmission of strain and converts the long-range strain into separated local strain. The peak IQEs of LED A2 with single V-pits layer and LED B4 with double V-pits layers were measured to be 10.5% at 613 nm and 21.5% at 612.1 nm, respectively. The IQE is greatly improved by 204.7%. The research results indicate that the double V-pits layers structure can alleviate the compressive strain of InGaN QWs more effectively, reduce the influence of piezoelectric polarization field, and improve the IQE.

Enabling robust near-infrared afterglow polymers through cascade energy transfer

Near-infrared afterglow materials, which can significantly reduce background fluorescence and improve penetration in living organisms, are vital for precision imaging. However, the practicability of near-infrared afterglow materials has been hindered by their short lifetime and low luminescence quantum efficiency. Herein, we propose an effective strategy for doping water-soluble afterglow polymer host materials with fluorescent dyes, leveraging the step-by-step Förster energy transfer principle to realize near-infrared afterglow. Benefiting from the ultralong lifetime of 4.2 s and high quantum efficiency of 20.1 % for the blue host PAMCz as well as efficient cascade energy transfer efficiency of 83.3 %, the developed NIR afterglow exhibits luminescence peaked at 750 nm, a lifetime of 1.4 s, and a quantum efficiency of 17.1 %. A successful demonstration of near-infrared afterglow biological imaging with a penetration depth of 3.4 mm and signal-to-background ratio of 48.3, has been established. These advancements expand the scope of near-infrared afterglow materials by combining an ultralong lifetime with high quantum efficiency, providing a roadmap for designing robust near-infrared materials.

Fluorescent nectar in non-flying mammal-pollinated plants – observations and considerations in some Asparagaceae

Background and aims – Fluorescence is the emission of light by a fluorophore that has absorbed light of shorter wavelengths. While the role of fluorescence in visual communication has been documented in some animals (budgerigars, gelatinous zooplankton), it is controversially discussed in plants. Floral nectar fluorescence has been mainly found in flowers pollinated by bees. It has been suggested as direct visual cue by which bees can evaluate the available quantity of nectar, thus being important for pollination and foraging efficiency. However, this function has been questioned, since fluorescence is said to be obscured by floral reflections due to low quantum efficiency. The aim of this study was to examine the nectar of plants pollinated by non-flying mammals, namely Eucomis regia, Massonia grandiflora, M. echinata, and M. pustulata (Asparagaceae) from South Africa. Material and methods – To detect possible fluorescence in flowers, the plants were illuminated in a darkened room under UV light and photographed with a camera equipped with a UV/IR cut filter (transmitting at 400–700 nm). Key results – Within the inflorescences, the nectar of all species showed blue to bluish fluorescence and UV absorption. Separated nectar also fluoresced. Conclusion – As fluorescence in flowers occurs not only in bee-pollinated plants but also in plants pollinated by wind, and by nocturnal or crepuscular pollinators (non-flying mammals, bats, moths) for which floral scent is an important attractant, floral fluorescence seems to have no adaptive value for the attraction of flower visitors. We discuss the potential role of fluorescence in flowers as just a by-product of compounds that might have other functions such as visual attraction by reflection (or UV absorbance), protection of genetic material in pollen from UV induced damage, or as a floral filter causing nectar to be bitter, repelling ineffective pollinators but not effective ones.

2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104, and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.

Remarkable Plasmonic Enhanced Luminescence of Ce3+doped Lanthanide Downconversion Nanoparticles in NIR‐II Window by Silver Hole‐Cap Nanoarrays

AbstractLanthanide downconversion nanoparticles (DCNPs) have huge potential in biosensing and imaging applications in the NIR‐II window. However, DCNPs inherently suffer from low quantum efficiency, due to low absorption cross‐section and the restricted doping concentration of lanthanide ions. In this work, a combined strategy for downconversion luminescence in the NIR‐II window is investigated by the integration of Ce3+ ions into the conventional NaYF4: Yb3+, Er3+ DCNPs and incorporation of periodic silver hole‐cap coupled Nanoarrays (Ag‐HCNAs) simultaneously. Over two orders of magnitude, luminescence enhancement is achieved by the combination of optimized Ce3+ doping and plasmonic effects, compared to NaYF4: Yb3+, Er3+ DCNPs immobilized on the glass substrate. Moreover, 3D Finite‐Difference Time‐Domain (FDTD) simulations and time‐resolved luminescence measurements are combined to gain important insights into the mechanism of downconversion luminescence enhancement. The results show that there is a large electric field enhancement between the Ag nanoholes and the Ag hemisphere cap at 980 nm (excitation enhancement), while the lifetime shortening at 1525 nm revealed an increased radiative decay rate and enhanced quantum yield (emission rate enhancement). The strategy for downconversion luminescence enhancement demonstrated in this work holds a significant potential for advancing the next generation biosensing and bioimaging based on DCNPs in the NIR‐II window.

Surface plasmon polariton–enhanced upconversion luminescence for biosensing applications

Abstract Upconversion luminescence (UCL) has great potential for highly sensitive biosensing due to its unique wavelength shift properties. The main limitation of UCL is its low quantum efficiency, which is typically compensated using low-noise detectors and high-intensity excitation. In this work, we demonstrate surface plasmon polariton (SPP)-enhanced UCL for biosensing applications. SPPs are excited by using a gold grating. The gold grating is optimized to match the SPP resonance with the absorption wavelength of upconverting nanoparticles (UCNPs). Functionalized UCNPs conjugated with antibodies are immobilized on the surface of the fabricated gold grating. We achieve an UCL enhancement up to 65 times at low excitation power density. This enhancement results from the increase in the absorption cross section of UCNPs caused by the SPP coupling on the grating surface. Computationally, we investigated a slight quenching effect in the emission process with UCNPs near gold surfaces. The experimental observations were in good agreement with the simulation results. The work enables UCL-based assays with reduced excitation intensity that are needed, for example, in scanning-free imaging.

Activator Heavy Solid Solution in Rigid Framework: An Effective Strategy Toward Highly Efficient and Thermally Stable Near‐Infrared Emission for Wireless Communication

AbstractBroadband near‐infrared (NIR) phosphors are crucial components of next‐generation NIR lighting sources. However, the design of high‐efficiency and thermally stable NIR phosphors still poses a significant challenge, whose quantum efficiencies (QEs) are directly limited by their absorption efficiency (AE) toward incident light. Here, an efficient and thermally stable NIR emission with AE up to 64.9% and emission keeping of 91.23% at 423 K is demonstrated via Cr3+ heavy solid solution in rigid framework LiCaGaF6:Cr3+ (LCGFC). Isomorphic LiCaAlF6:Cr3+ also exhibits thermal robustness, while traps in low doping concentration and low QEs. Comparative studies on crystal structure, formation energy, and Helmholtz free energy disclose that Cr3+ substitution on equivalent and equiradius Ga3+ site versus radii differential Al3+ site generates heavier solid solution and sustainable structural rigidity with acquirement of higher AE and better thermal stability. Incorporating LCGFC with a blue InGaN chip, a NIR phosphor‐converted light‐emitting diode is fabricated to realize stable wireless optical communication with good penetrability through biological tissue and some organic products. These findings develop a strategy based on activator heavy solid solutions in a rigid framework to achieve high‐efficiency and thermally stable NIR phosphors but also advance their novel optoelectronic applications.

Engineering of g-C3N4 for Photocatalytic Hydrogen Production: A Review.

Graphitic carbon nitride (g-C3N4)-based photocatalysts have garnered significant interest as a promising photocatalyst for hydrogen generation under visible light, to address energy and environmental challenges owing to their favorable electronic structure, affordability, and stability. In spite of that, issues such as high charge carrier recombination rates and low quantum efficiency impede its broader application. To overcome these limitations, structural and morphological modification of the g-C3N4-based photocatalysts is a novel frontline to improve the photocatalytic performance. Therefore, we briefly summarize the current preparation methods of g-C3N4. Importantly, this review highlights recent advancements in crafting high-performance g-C3N4-based photocatalysts, focusing on strategies like elemental doping, nanostructure design, bandgap engineering, and heterostructure construction. Notably, sophisticated doping techniques have propelled hydrogen production rates to a 104-fold increase. Ingenious nanostructure designs have expanded the surface area by a factor of 26, concurrently extending the fluorescence lifetime of charge carriers by 50%. Moreover, the strategic assembly of heterojunctions has not only elevated charge carrier separation efficiency but also preserved formidable redox properties, culminating in a dramatic hundredfold surge in hydrogen generation performance. This work provides a reliable and brief overview of the controlled modification engineering of g-C3N4-based photocatalyst systems, paving the way for more efficient hydrogen production.

P-Doped Carbon Nanotubes As Light Absorbers and Electron Donors in Photovoltaics

Doping is a ubiquitous and powerful tool used to alter a material’s electronic properties. Conventional Si solar cells would not exist without it, and it has been used to increase the efficiency of organic and inorganic photovoltaics alike. While doped carbon nanotubes (CNTs) have been the subject of numerous spectroscopic studies, few investigations have examined their performance in photovoltaic devices. Here, we incorporate chemically p-doped CNTs into photovoltaic heterojunctions with C60. In a conventional CNT–C60 heterojunction device, photocurrent can be produced when photogenerated excitons in the CNT layer diffuse to the CNT–C60 heterointerface. The offset in conduction band energy drives dissociation of these excitons via photoelectron transfer from CNT to C60, which yields separated charges that can be collected. Our objective here was to determine the following: 1) does p-doping increase or decrease the efficiency with which excitons dissociate into electrons and holes? 2) Do p-dopants trap excitons and inhibit their diffusion to the heterointerface? 3) How efficiently can a photogenerated trion (exciton coupled to an injected hole) be dissociated to produce a photocurrent?To answer these questions, we fabricated polymer wrapped (6,5) CNT–C60 heterojunctions over a range of CNT thickness with various levels of p-doping introduced by triethyloxonium hexachloroantimonate treatment. We measured photocurrent to quantify relative photoelectron transfer efficiency for both excitons and trions and compared this to photoluminescence and transient absorbance measurements on doped CNT films. We found that p-doping decreases photocurrent because injected holes bleach the CNTs’ S11 transition and decrease the amount of light absorbed. Meanwhile, the photogenerated exciton to collected electron transfer efficiency remains unchanged for doping densities up to 50μm-1. In contrast, photoluminescence quantum yield drops by over 90% at an equivalent doping density. We attribute this disparity to the fast electron transfer at the CNT–C60 interface, which occurs on the order of femtoseconds. We also found that moderate doping can promote photocurrent at the trion peak, with a photogenerated trion to collected electron transfer efficiency about 1/4 that of the photogenerated exciton to collected electron transfer efficiency. Photocurrent at the trion absorption peak is invariant with reverse bias up to 0.3 V, despite the charged nature of the trion, supporting evidence for the immobile nature of trions. These results indicate that p-CNTs are a viable material for use in photovoltaics, albeit with weaker absorption, and that photocurrent from trions is possible, although with lower quantum efficiency. Figure 1

Near-Complete Suppression of NIR-II Luminescence Quenching in Halide Double Perovskites for Surface Functionalization Through Facet Engineering.

Lanthanide-based NIR-II-emitting materials (1000-1700nm) show promise for optoelectronic devices, phototherapy, and bioimaging. However, one major bottleneck to prevent their widespread use lies in low quantum efficiencies, which are significantly constrained by various quenching effects. Here, a highly oriented (222) facet is achieved via facet engineering for Cs2NaErCl6 double perovskites, enabling near-complete suppression of NIR-II luminescence quenching. The optimally (222)-oriented Cs2Ag0.10Na0.90ErCl6 microcrystals emit Er3+ 1540nm light with unprecedented high quantum efficiencies of 90±6% under 379nm UV excitation (ultralarge Stokes shift >1000nm), and a record near-unity quantum yield of 98.6% is also obtained for (222)-based Cs2NaYb0.40Er0.60Cl6 microcrystallites under 980nm excitation. With combined experimental and theoretical studies, the underlying mechanism of facet-dependent Er3+ 1540nm emissions is revealed, which can contribute to surface asymmetry-induced breakdown of parity-forbidden transition and suppression of undesired non-radiative processes. Further, the role of surface quenching is reexamined by molecular dynamics based on two facets, highlighting the drastic two-phonon coupling effect of a hydroxyl group to 4I13/2 level of Er3+. Surface-functionalized facets will provide new insights for tunable luminescence in double perovskites, and open up a new avenue for developing highly efficient NIR-II emitters toward broad applications.

Surficial Homogenic Effect Enables Highly Stable Deep-Blue Perovskite Light-Emitting Diodes.

The device performance of deep-blue perovskite light-emitting diodes (PeLEDs) is primarily constrained by low external quantum efficiency (EQE) especially poor operational stability. Herein, we develop a facile strategy to improve deep-blue emission through rational interface engineering. We innovatively reported the novel electron transport material, 4,6-Tris(4-(diphenylphosphoryl)phenyl)-1,3,5-triazine (P-POT2T), and utilized a sequential wet-dry deposition method to form homogenic gradient interface between electron transport layer (ETL) and perovskite surface. Unlike previous reports that achieved carrier injection balance by inserting new interlayers, our strategy not only passivated uncoordinated Pb in the perovskite via P=O functional groups but also reduced interfacial carrier recombination without introducing new interfaces. Additionally, this strategy enhanced the interface contact between the perovskite and ETL, significantly boosting device stability. Consequently, the fabricated deep-blue PeLEDs delivered an external quantum efficiency (EQE) exceeding 5% (@ 460 nm) with an exceptional halftime extended to 31.3 minutes. This straightforward approach offers a new strategy to realize highly efficient especially stable PeLEDs.

Surficial Homogenic Effect Enables Highly Stable Deep‐Blue Perovskite Light‐Emitting Diodes

Abstract: The device performance of deep‐blue perovskite light‐emitting diodes (PeLEDs) is primarily constrained by low external quantum efficiency (EQE) especially poor operational stability. Herein, we develop a facile strategy to improve deep‐blue emission through rational interface engineering. We innovatively reported the novel electron transport material, 4,6‐Tris(4‐(diphenylphosphoryl)phenyl)‐1,3,5‐triazine (P‐POT2T), and utilized a sequential wet‐dry deposition method to form homogenic gradient interface between electron transport layer (ETL) and perovskite surface. Unlike previous reports that achieved carrier injection balance by inserting new interlayers, our strategy not only passivated uncoordinated Pb in the perovskite via P=O functional groups but also reduced interfacial carrier recombination without introducing new interfaces. Additionally, this strategy enhanced the interface contact between the perovskite and ETL, significantly boosting device stability. Consequently, the fabricated deep‐blue PeLEDs delivered an external quantum efficiency (EQE) exceeding 5% (@ 460 nm) with an exceptional halftime extended to 31.3 minutes. This straightforward approach offers a new strategy to realize highly efficient especially stable PeLEDs.