Low Photoresponse Research Articles

Design of Ultra-Narrow Bandgap Polymer Acceptors for High-Sensitivity Flexible All-Polymer Short-Wavelength Infrared Photodetectors.

All-polymer photodetectors possess unique mechanical flexibility and are ideally suitable for the application in next-generation flexible, wearable short-wavelength infrared (SWIR, 1000-2700 nm) photodetectors. However, all-polymer photodetectors commonly suffer from low sensitivity, high noise, and low photoresponse speed in the SWIR region, which significantly diminish their application potential in wearable electronics. Herein, two polymer acceptors with absorption beyond 1000 nm, namely P4TOC-DCBT and P4TOC-DCBSe, were designed and synthesized. The two polymers possess rigid structure and good conformational stability, which is beneficial for reducing energetic disorder and suppressing dark current. Owing to the efficient charge generation and ultralow noise current, the P4TOC-DCBT-based all-polymer photodetector achieved a specific detectivity ( ) of over 1012 Jones from 650 (visible) to 1070 nm (SWIR) under zero bias, with a response time of 1.36 μs. These are the best results for reported all-polymer SWIR photodetectors in photovoltaic mode. More significantly, the all-polymer blend films exhibit good mechanical durability, and hence the P4TOC-DCBT-based flexible all-polymer photodetectors show a small performance attenuation (<4 %) after 2000 cycles of bending to a 3 mm radius. The all-polymer flexible SWIR organic photodetectors are successfully applied in pulse signal detection, optical communication and image capture.

Design of Ultra‐Narrow Bandgap Polymer Acceptors for High‐Sensitivity Flexible All‐Polymer Short‐Wavelength Infrared Photodetectors

AbstractAll‐polymer photodetectors possess unique mechanical flexibility and are ideally suitable for the application in next‐generation flexible, wearable short‐wavelength infrared (SWIR, 1000–2700 nm) photodetectors. However, all‐polymer photodetectors commonly suffer from low sensitivity, high noise, and low photoresponse speed in the SWIR region, which significantly diminish their application potential in wearable electronics. Herein, two polymer acceptors with absorption beyond 1000 nm, namely P4TOC‐DCBT and P4TOC‐DCBSe, were designed and synthesized. The two polymers possess rigid structure and good conformational stability, which is beneficial for reducing energetic disorder and suppressing dark current. Owing to the efficient charge generation and ultralow noise current, the P4TOC‐DCBT‐based all‐polymer photodetector achieved a specific detectivity ( ) of over 1012 Jones from 650 (visible) to 1070 nm (SWIR) under zero bias, with a response time of 1.36 μs. These are the best results for reported all‐polymer SWIR photodetectors in photovoltaic mode. More significantly, the all‐polymer blend films exhibit good mechanical durability, and hence the P4TOC‐DCBT‐based flexible all‐polymer photodetectors show a small performance attenuation (&lt;4 %) after 2000 cycles of bending to a 3 mm radius. The all‐polymer flexible SWIR organic photodetectors are successfully applied in pulse signal detection, optical communication and image capture.

High Photoresponsivity and Fast Response Speed Ferroelectric Photomemristor for Artificial Visual System Application

AbstractFerroelectric photoelectric devices show promising applications in artificial vision systems. However, this type of devices used in artificial vision systems exhibits low photoresponsivity and this limited cyclability of photocurrents, which hinders the progress of artificial vision systems. In this study, an artificial vision system is constructed with high photoresponsivity, fast photoresponse speed, and high read/write speed based on the Pd/PbZr0.4Ti0.6O3/La0.3Sr0.7MnO3/LaAlO3 ferroelectric photomemristor. The high optical response (18.86 nanoamperes) and read/write speeds (50 nanoseconds) of the device significantly improve the robustness and speed of the neuromorphic visual system while reducing power consumption for recognition. The artificial vision system developed in this study provides excellent real‐time image processing capabilities, including edge detection and classification with 100% accuracy for musical key patterns, and it is expected to offer great potential for the development of high‐performance self‐powered artificial vision systems.

Bulk photovoltaic effect and high mobility in the polar 2D semiconductor SnP2Se6.

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2.

Reversible modulation of superconductivity in thin-film NbSe2 via plasmon coupling

In recent years, lightwave has stood out as an ultrafast, non-contact control knob for developing compact superconducting circuitry. However, the modulation efficiency is limited by the low photoresponse of superconductors. Plasmons, with the advantages of strong light-matter interaction, present a promising route to overcome the limitations. Here we achieve effective modulation of superconductivity in thin-film NbSe2 via near-field coupling to plasmons in gold nanoparticles. Upon resonant plasmon excitation, the superconductivity of NbSe2 is substantially suppressed. The modulation factor exceeds 40% at a photon flux of 9.36 × 1013 s−1mm−2, and the effect is significantly diminished for thicker NbSe2 samples. Our observations can be theoretically interpreted by invoking the non-equilibrium electron distribution in NbSe2 driven by the plasmon-associated evanescent field. Finally, a reversible plasmon-driven superconducting switch is realized in this system. These findings highlight plasmonic tailoring of quantum states as an innovative strategy for superconducting electronics.

High-Sensitive Uncooled Mid-Wave Infrared Detector Based on TiS3 Nanoribbon.

High-sensitive uncooled mid-wave infrared (MWIR) photodetection with fast speed is highly desired for biomedical imaging, optical communication, and night vision technology. Low-dimensional materials with low dark current and broadband photoresponse hold great promise for use in MWIR detection. Here, this study reports a high-performance MWIR photodetector based on a titanium trisulfide (TiS3) nanoribbon. This device demonstrates an ultra-broadband photoresponse ranging from the visible spectrum to the MWIR spectrum (405-4275nm). In the MWIR spectral range, the photodetector achieves competitive high photoresponsivity (R) of 21.1 AW-1, and an impressive specific detectivity (D*) of 5.9× 1010 cmHz1/2W-1 in ambient air. Remarkably, the photoresponse speed in the MWIR with τr = 1.3ms and τd = 1.5ms is realized which is much faster than the thermal time constant of 15ms. These findings pave the way for highly sensitive, room-temperature MWIR photodetectors with exceptionally fast response speed.

High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer.

The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. In this study, we present three types of UV PDs based on an unetched GaN, NP-GaN distributed Bragg reflector (DBR), and NP-GaN-DBR with a Ga2O3 single-crystal film (Ga2O3/NP-GaN-DBR). The unetched GaN PD does not exhibit a significant photoresponse. Compared to the NP-GaN-DBR PD device, the Ga2O3/NP-GaN-DBR PD demonstrates a larger light-dark current ratio (6.14 × 103) and higher specific detectivity (8.9 × 1010 Jones) under 365 nm at 5 V bias due to its lower dark current (3.0 × 10-10 A). This reduction in the dark current can be attributed to the insertion of the insulating Ga2O3 between the metal and the NP-GaN-DBR, which provides a thicker barrier thickness and higher barrier height. Additionally, the Ga2O3/NP-GaN-DBR PD device exhibits shorter rise/decay times (0.33/0.23 s) than the NP-GaN-DBR PD, indicating that the growth of a Ga2O3 layer on the DBR effectively reduces the trap density within the NP-GaN DBR structure. Although the device with a Ga2O3 layer presents low photoresponsivity (0.1 A/W), it should be feasible to use Ga2O3 as a dielectric layer based on the above-mentioned reasons.

Helical polyisocyanides with thermally activated delayed fluorescence pendants for efficient circularly polarized light emission and detection

Chiral organic polymeric semiconductors are widely regarded as promising candidates for circularly polarized light (CPL) detection due to their advantages of easy chemical modification, solution processing and low cost. However, traditional organic polymeric materials face low photoresponsivity and photocurrent asymmetry factor when constructing CPL detectors. To address this issue, we develope single-handed helical polyisocyanides with thermally activated delayed fluorescence (TADF) feature to fabricate a donor-acceptor heterojunction photodetector with C60, where efficient triplet exciton utilization enables a high photocurrent response while the static single-handed helical main chains of polyisocyanides ensure a high photocurrent asymmetry factor, simultaneously. Furthermore, the performance of TADF polyisocyanides is conveniencely optimized by copolymerizing the host. Benefiting from the comprehensive functionality of TADF polyisocyanides, the prepared photodetectors exhibit a high responsivity of 0.21 A W−1 and a very high photocurrent asymmetry factor of up to 0.12, which make it superior to the reported CPL photodetectors based on organic polymers. In addition, the detector has excellent reproducibility enabling no photocurrent roll-off after 1000 cycles. The long-term stability in ambient air also manifests its robustness. This work paves a new way for high-efficiency polymers based CPL detectors.

Robust Deep UV Photodetectors Based on One‐Step‐Grown Polycrystalline Ga2O3 Film via Pulsed Laser Deposition toward Extreme‐Environment Application

AbstractGallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed in extreme conditions, for example, flame detection and space exploration, face the challenges of performance degradation caused by high/low‐temperature transformation. Here, DUV photodetectors are tailored with high durability and stability by one‐step‐grown β‐Ga2O3 films via pulsed laser deposition. A high‐oxygen‐pressure scheme effectively addresses the issue of film‐free deposition at specifically high temperatures, facilitating the formation of polycrystalline high‐resistivity β‐Ga2O3 films. As a result, the devices exhibit outstanding performance, including a low dark current (4.4 pA @30 V), high photoresponsivity (147.36 A W−1), and fast response time (3.1/22.6 ms). Additionally, the photoresponse performance shows minimal degradation at high temperatures up to 300 °C and even improves at low temperatures down to −100 °C, ranking it among the most robust DUV photodetectors. The mechanism of photoresponse, involving the exciton formation, bandgap evolution, carrier‐phonon scatter, etc., is also elucidated in a wide temperature range. This work provides an efficient solution for developing robust Ga2O3 DUV photodetectors with excellent performance for extreme‐condition applications.

Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection.

Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.

Improving ZnO ultraviolet Schottky photodetectors by inserting a MoS2 layer

ZnO Schottky junction photodetectors (PDs) has become a research focus due to their wide application, high-performance and low-cost. However, their development has been limited by the low photo-response. Two-dimensional MoS2 exhibit numerous advantages, including a tunable band gap, a strong exciton effect, and broadband absorption. In this work, we incorporate MoS2 into ZnO thin films using a simple spin-coating method to create Schottky ultraviolet (UV) PDs that show a remarkably increased responsivity (by 885%) and a substantially improved photo-current (by one order of magnitude). Furthermore, they exhibit a relatively low noise equivalent power (5.11×10−13 W) and a high normalized detectivity 2.96×1011 Jones. This outstanding performance can be attributed to the enhanced absorption and efficient charge transfer of ZnO film after introduction of MoS2 layer. In this study, an easy method is presented for creating high-performance ZnO Schottky PDs.

Waveguide-integrated twisted bilayer graphene photodetectors

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W–1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s–1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance

We present a GeSe/SnSe van der Waals heterojunction fabricated using the wet transfer technique. GeSe and SnSe were synthesized via a low-temperature and atmospheric-pressure chemical vapor deposition method. The GeSe/SnSe heterostructure photodetector demonstrates remarkable rectification characteristics, boasting a rectification ratio of 102, along with an exceptionally low dark current, indicating minimal power consumption. Furthermore, it exhibits a broad optical response, spanning from the visible spectrum (450 nm) to the near-infrared (1064 nm). Under 808 nm laser illumination and reverse bias, the device achieves a responsivity of 19.82 A/W, a detectivity of 4.74 × 109 Jones, and an external quantum efficiency of 3048.32%. Notably, the GeSe/SnSe heterojunction photodetector also exhibits self-powered characteristics, with a responsivity of 0.11 mA/W and a detectivity of 5.44 × 106 Jones at zero bias voltage, accompanied by a fast response time of 23/61 ms (rise/fall). These findings underscore the effectiveness of the GeSe/SnSe heterojunction as a strategy for near-infrared photodetectors to simultaneously achieve low power consumption, high photoresponsivity, and self-powered photodetection, which is promising for optoelectronic device applications.

Ferroelectrically tuned tunneling photodetector based on graphene/h-BN/In2Se3 heterojunction

Transition metal dichalcogenides (TMDs) show promise for photodetection across various wavelengths. However, photoconductive devices often face various limitations such as low photoresponsivity or high dark current. This study introduces a highly sensitive photodetector using a graphene/h-BN/In2Se3 heterostructure. A substantial electron barrier (2.72 eV) at the graphene/h-BN junction effectively suppresses dark current, while the small hole barrier (1.39 eV) at the h-BN/In2Se3 junction facilitates efficient tunneling of photocarriers under illumination. The photodetector demonstrates a fast response time (Tr = 15 ms, Td = 5 ms), outstanding responsivity (1.18 × 104 μA/W), and detectivity (1.74 × 1010 Jones) at 4 V bias and 637 nm light illumination. Spectral measurements reveal a broad detection range from visible to near-infrared (450–1310 nm). Furthermore, leveraging the non-volatile ferroelectric properties of In2Se3 allows modulation of the barrier height, enabling non-volatile tunable photoconductivity. This study represents a significant advancement in ferroelectric based optoelectronic detection devices, providing strong support for applications in high-performance computing, neural networks, and related domains.

Coupling interface constructions of ZnO@ZnS@FeOOH for photocatalytic hydrogen production performance

Photocatalysis is a reliable method to solve energy crisis and generate green energy hydrogen. ZnO@ZnS (ZOS) formed heterojunction repressed carrier complexation and thus enhanced photocatalytic performance, but its low photoresponse efficiency limited its photocatalytic performance. Therefore, in this paper, ZnO@ZnS was modified with ethylene diamine tetraacetic acid (EDTA) to form ZnO@ZnS@FeOOH composites with coupling interface. The modification of EDTA could inhibite the oxidation of FeOOH during the synthesis process, and what’s more it could enhance the charge transfer at the heterojunction interface to promote the separation of electron-hole pairs and photoresponsive ability to further enhanced the hydrogen precipitation performance. The concentration of EDTA and Fe sources were regulated to investigate the photocatalytic hydrogen production capacity of the composites. The results indicated that the ternary composite ZnO@ZnS@FeOOH had the superior hydrogen evolution performance with the hydrogen evolution rate of 529.17 umol g−1 h−1, which was 2.4 times higher than that of ZOS. EDTA acts as an electron channel to enhance the inter-interfacial electron transfer capability, and the loading of FeOOH formed a heterojunction structure, which promoted carrier separation and enhanced the photoresponse. It’s the synergistic effect to enhanced the photocatalytic hydrogen production performance. This paper provided a method for the construction of ternary heterojunctions and interfacial charge transport channels.

IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

AbstractAmong various photoresponsive materials, organic materials have gained interest due to their low cost, large‐scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450–950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under 750 nm light with an intensity of only 1.03 nW cm−2. These results highlight the potential of organic materials in developing high‐performance phototransistors.

Sm, Pt asymmetric n- and p-type contacts in WSe2 phototransistor for high-performance broadband photodetection

The development of high-performance broadband photodetectors working at room temperature is still attractive. The Schottky barrier phototransistor based on asymmetric junction seems to be endowed with such potential—as photodetectors with low device power consumption and high photoresponse; however, it is rarely studied. Herein, a Sm–WSe2–Pt phototransistor with asymmetric metal contacts is constructed, and it is systematically investigated for their electronic and photoelectronic tunability via gate voltage, wavelength, and illumination power density. It was found that the tunable photogating process dominates the photoresponse mechanism, which allows for an excellent broadband photodetection from 300 to 1000 nm wavelength. In addition, the responsivity (R) and specific detectivity (D*) at 450 nm can reach 1723 A/W and 2.3 × 1013 Jones, respectively, while that of infrared illumination of 900 nm can reach 4.7 A/W and 3.1 × 1010 Jones, respectively. In addition, the device exhibits obvious photoresponse at zero bias, the R and D* can reach up to 27 mA/W and 8.5 × 1010 Jones, which realizes self-driven photodetection. This work provides an optimal option for realizing high-integrated, high-performance, low-power-consuming, and room-temperature-working broadband photodetectors.

Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation

Amorphous oxide semiconductor photodetectors (PDs) are promising ultrasensitive and power-efficient ultraviolet (UV) PDs because they generate low dark current in the dark and exhibit high photoresponse under UV irradiation owing to their superior UV absorption and photocarrier transport characteristics. Herein, we demonstrate UV-sensitive and power-efficient oxide phototransistors through the nanometer-scale engineering of oxide semiconductors and appropriate modulation of gate bias conditions. The dark current and photocurrent of an oxide phototransistor exhibit a trade-off relationship in terms of the thickness of the oxide semiconductor film. Ultrathin InZnO is disadvantageous for fabricating UV-sensitive PDs because of its low photoresponse. In contrast, excessively thick InZnO is disadvantageous for fabricating power-efficient UV PDs owing to its high dark current. However, the InZnO film with an optimal film thickness of 8 nm can simultaneously provide the advantages of both ultrathin and excessively thick cases owing to its low intrinsic carrier concentration and sufficient UV absorption depth. Consequently, an InZnO phototransistor with high UV-sensing performance (Smax = 1.25 × 106), low-power operation capability (Idark = ∼10−13A), and excellent repeatability is realized by using an 8-nm-thick InZnO semiconductor and applying appropriate gate bias modulation (constant gate bias for maximized photosensitivity and temporal positive bias pulse for persistence photocurrent elimination).

Bandgap engineering and tuning of optoelectronic properties of 2D NbSe2/MoS2 heterostructure using first principle computations

This study performed first-principles calculations based on density functional theory to study the interlayer electronic and optical properties of NbSe2/MoS2 heterostructures. Bandgap in 2H-MoS2 is often quite large typically around 1.8 eV, showing slow response time and low photoresponsivity (R); however, a slight bandgap variation can improve the properties of semiconducting and conducting heterostructures. Different stacking configurations of the interlayer van der Waals interaction were precisely investigated. Due to their unique properties, atomically thin NbSe2/MoS2 based heterostructures hold great potential for future electronic and optoelectronic devices. LDA, GGA, GGA with SOC, and HSE06 are used to study the monolayers of MoS2, NbSe2, and their T and H stacking structures. Our results demonstrate that the metallic NbSe2 effect on the semi-metallic MoS2 reduces the band gap of MoS2 up to 140 meV. Moreover, these heterostructures exhibit outstanding absorption properties from visible to ultraviolet regions, which makes them ideal candidates for optoelectronic applications, particularly in photodetectors.

Harnessing 2D Ruddlesden-Popper Perovskite with Polar Organic Cation for Ultrasensitive Multibit Nonvolatile Transistor-Type Photomemristors.

Photomemristors have been regarded as one of the most promising candidates for next-generation hardware-based neuromorphic computing due to their potentials of fast data transmission and low power consumption. However, intriguingly, so far, photomemristors seldom display truly nonvolatile memory characteristics with high light sensitivity. Herein, we demonstrate ultrasensitive photomemristors utilizing two-dimensional (2D) Ruddlesden-Popper (RP) perovskites with a highly polar donor-acceptor-type push-pull organic cation, 4-(5-(2-aminoethyl)thiophen-2-yl)benzonitrile+ (EATPCN+), as charge-trapping layers. High linearity and almost zero-decay retention are observed in (EATPCN)2PbI4 devices, which are very distinct from that of the traditional 2D RP perovskite devices consisting of nonpolar organic cations, such as phenethylamine+ (PEA+) and octylamine+ (OA+), and traditional 3D perovskite devices consisting of methylamine+ (MA+). The 2-fold advantages, including desirable spatial crystal arrangement and engineered energetic band alignment, clarify the mechanism of superior performance in (EATPCN)2PbI4 devices. The optimized (EATPCN)2PbI4 photomemristor also shows a memory window of 87.9 V and an on/off ratio of 106 with a retention time of at least 2.4 × 105 s and remains unchanged after >105 writing-reading-erasing-reading endurance cycles. Very low energy consumptions of 1.12 and 6 fJ for both light stimulation and the reading process of each status update are also demonstrated. The extremely low power consumption and high photoresponsivity were simultaneously achieved. The high photosensitivity surpasses that of a state-of-the-art commercial pulse energy meter by several orders of magnitude. With their outstanding linearity and retention, rabbit images have been rebuilt by (EATPCN)2PbI4 photomemristors, which truthfully render the image without fading over time. Finally, by utilizing the powerful ∼8 bits of nonvolatile potentiation and depression levels of (EATPCN)2PbI4 photomemristors, the accuracies of the recognition tasks of CIFAR-10 image classification and MNIST handwritten digit classification have reached 89% and 94.8%, respectively. This study represents the first report of utilizing a functional donor-acceptor type of organic cation in 2D RP perovskites for high-performance photomemristors with characteristics that are not found in current halide perovskites.