MMIC Low Noise Amplifier Research Articles

Enhanced Measurement Sensitivity Using Near-Field Antenna With MMIC Low-Noise Amplifier for Deep Tissue Microwave Thermometry

Enhanced Measurement Sensitivity Using Near-Field Antenna With MMIC Low-Noise Amplifier for Deep Tissue Microwave Thermometry

Design of a GaAs-Based Ka-Band Low Noise Amplifier MMIC with Gain Flatness Enhancement

This paper presents a GaAs-based Ka-band low noise amplifier (LNA) with gain flatness enhancement. Active device optimization and inductive degeneration techniques were employed to obtain a low noise figure (NF) and good input/output return loss. In order to achieve a flat gain response over a wide bandwidth, the stagger tuning technique was utilized. The proposed LNA was implemented by 0.15 μm GaAs pHEMT process, and the chip area is only 1.5 × 0.9 mm2. Measurement results show that the presented LNA exhibits a small signal gain of 21.5 ± 0.3 dB, and the NF of the LNA is less than 2.2 dB from 32 to 40 GHz at room temperature.

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Design and Analysis of a Cascode Distributed LNA With Gain and Noise Improvement in 0.15-μm GaAs pHEMT Technology

This brief presents a 2.0~42.0 GHz ultra-wide bandwidth Cascode distributed low-noise amplifier (CDLNA) MMIC design. With the proposed coupled-line (CL) sections between each drain-artificial transmission line (D-ATML) node and related gate-artificial transmission line (G-ATML) node, the traveling signal is reused to enhance the gain and broaden the operation bandwidth simultaneously. To improve the gain further, the inductive gain peaking has also been employed at each drain of common-source (CS) and common-gate (CG) transistors. Meanwhile, an active termination technique incorporating active and passive elements has been adopted to achieve better noise figure (NF) performance. Employing the proposed techniques, an LNA prototype has been designed and fabricated in a 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaAs E-Mode pHEMT technology with the chip size of 1.53 mm2 including all the pads. From test results, the proposed CDLNA demonstrates a peak gain of 14.1 dB, the best NF of 2.1 dB, a group delay of 102 ± 58.4 ps, and 23.25/14.7 dBm best OIP3/OP1dB, respectively. The total power consumption is 129 mW under 3 V VDD.

C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness

In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the transistor and series resistor-capacitor (RC) feedback between the gate and the drain of the transistor, we obtained stable amplifier operation and a compromised impedance trace for both input impedance matching and noise matching while suppressing performance degradation of the maximum available gain and minimum noise figure. The developed low-noise amplifier MMIC, which implements simple matching circuits by using biasing elements as matching elements, had a linear gain of more than 21.4 dB and a noise figure of less than 1.91 dB in the wide bandwidth of 4.3–7.4 GHz. Under the single-tone power test, the low-noise amplifier MMIC had an output P1dB of 14.3–20.1 dBm, and the two-tone intermodulation distortion measurement exhibited an input third-order intercept point (IIP3) of 2.2–5.6 dBm in the same frequency range as the above.

A Broadband 70–110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology

This letter describes the design and measured performance of an E-/ W-band GaN MMIC low-noise amplifier based on a 90-nm T-gate GaN technology. The GaN technology is characterized by a peak fT of 145 GHz and an NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> of ~1.2 dB at 50 GHz. The LNA is comprised of a four-stage common-source amplifier designed to operate over a 70-110-GHz frequency band. From 70 to 89 GHz, the amplifier achieves 15-17.9 dB of gain and an NF of 3.5-4.2 dB over a 75-83 GHz measured subband. From 90 to 110 GHz, the amplifier achieves a gain from 15.8 to 19.2 dB and an NF of 3.3-3.8 dB over a 91-96-GHz measured subband. These are believed to be the lowest NFs achieved from a single GaN amplifier covering both E- and W-frequency bands. The MMIC is 2.4×1.3 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in size and consumes 200 mW of dc power from a 5-V supply. The GaN LNA can be integrated with a PA and RF switch to form a compact GaN TR MMIC solution.

Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

GaN technology has attracted main attention towards its application to high-power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon-substrate GaN MMIC LNA operating in 18-31 GHz frequency range using a commercial 0.1 μm T-Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small-signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than −10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four-stage MMIC is 2.3 × 1.0 mm2 in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

&lt;span&gt;An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.&lt;/span&gt;

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

We present the results of noise-temperature measurements for four radio astronomy MMIC low-noise amplifiers (LNAs) at physical temperatures from 2 to 160 K. We observe and confirm recent reports that the noise temperature of an LNA exhibits a quadratic dependence with respect to the physical temperature. We are also able to confirm the prediction by Pospieszalski that below a certain physical temperature there is no further significant reduction in noise temperature. We then discuss these results in the context of both the Pospieszalski noise model and some recent Monte-Carlo simulations, which have implied that at very low temperatures, heating of the electron channel above ambient temperature may help to explain the behavior of the drain temperature parameter.

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

Intelligent GA optimizer for single supply operational amplifier and MMIC low noise amplifier

Single-Supply Operational Amplifier (Op-Amp) is important to the applications on battery-powered equipments whereas MMIC Low Noise Amplifier (LNA) is a type of integrated circuit device used in capturing operating signal in microwave frequency. This paper presents an optimization study of a Single-Supply Op-Amp and a MMIC LNA using Genetic Algorithm (GA). GA is proposed to optimize multiple input variables so as to achieve the required circuit design outputs. In Single-Supply Op-Amp, a single objective GA optimization study is conducted. Based on the single objective circuit design justification, GA is further investigated for its capability to deal with multiple design objectives in 5 GHz MMIC LNA. In this research, the Single-Supply Op-Amp design is synthesized via LTSpice whereas the MMIC LNA design is simulated through Agilent Advanced Design System (ADS). The optimization performance of GA for both single and multi-objective circuit designs is studied and the developed multi-objective GA optimizer is further compared with ADS built-in optimizers of Gradient and Quasi-Newton respectively. From the results, GA is shown to be capable in optimizing both single objective Op-Amp and multi-objective LNA.

Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

Millimeter-wave integrated circuits with gate lengths as short as 35nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4K.

A 243 GHz LNA Module Based on mHEMT MMICs With Integrated Waveguide Transitions

For use in a millimeter-wave direct detection radiometer for earth remote sensing, we have developed a low-noise amplifier (LNA) module with a small-signal gain of 19.5 dB at 243 GHz and a 3 dB bandwidth of 40 GHz. The implemented three-stage LNA MMIC has been manufactured using a 50 nm gate length metamorphic HEMT (mHEMT) technology on 50 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu$</tex> </formula> m thick GaAs substrates. Each of the two on-chip integrated E-plane probe waveguide transitions offers a transmission loss of only 0.5 dB at 243 GHz including a 7.5 mm long WR-3.4 waveguide. Due to the low-loss packaging, the LNA module achieves a low noise figure of only 6.0 dB at room temperature.

Cryogenic 36–45 GHz InP Low-Noise Amplifier MMIC's with Improved Noise Temperature by Eliminating Parasitic Parallel-Plate Modes

This paper describes cryogenic 36–45 GHz InP low-noise amplifier monolithic microwave integrated circuits (MMIC's) with an improved noise temperature by eliminating parasitic parallel-plate resonance modes. These MMIC's are used for a Radio Astronomical receiver, which needs the ultimate super low-noise and wide-band frequency characteristics, such as those in ALMA Band 1. The MMIC chips were designed in the coplanar waveguide (CPW), and mounted to the AlN substrate with a flip-chip assembly, which was promising compared to wire bonding. The flip-chip assemblies, however, are prone to cause the parasitic parallel plate resonance mode (PPM). The relationship between the $S$-parameters and the PPM was investigated by using a 3D-electromagnetic simulation of the simple transmission-line test-chip with the same chip size as that of the actual MMIC. In order to eliminate the PPM, additional bumps were mounted on the simple transmission-line test-chip, and the effect of these bumps was confirmed by the simulation. These results obtained from the simple transmission-line test-chip were applied to an actual MMIC chip assembly. The MMIC assembled with the additional bumps had no abnormality in the measured $S$-parameters, and the PPM had been eliminated up to 65 GHz. Moreover, the stability factor, $K$, became more than 2.4 over 36–45 GHz. This InP low-noise amplifier MMIC exhibited a gain of 15 dB and a noise temperature of 180–240 K at room temperature in the frequency range of 36–45 GHz. When cooled to 28 K, a gain of 17 dB and a noise temperature of 22–35 K were obtained at a power consumption of 4.7 mW over 36–45 GHz. A high-gain amplifier module consisting of two cascaded chips, exhibited a gain of 27–30 dB and a noise temperature of 25–30 K at the ambient temperature of 22 K in the frequency range of 41–45 GHz.

High Performance CPW MMIC LNA using GaAs-based Metamorphic HEMTs for 94 GHz Applications

In this paper, we report on a high-performance low-noise amplifier (LNA) using metamorphic high-electron-mobility transistor (MHEMT) technology for 94-GHz applications. The 100 nm × 60 μm MHEMT devices for the coplanar MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm and an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency (fT ) and the maximum oscillation frequency (fmax) were 195 GHz and 305 GHz, respectively. Based on this MHEMT technology, coplanar 94-GHz MMIC LNAs were realized, achieving a small signal gain of more than 13 dB between 90 and 100 GHz and a small signal gain of 14.8 dB and a noise figure of 4.7 dB at 94 GHz.

W-Band 다이오드 검출기 설계

본 논문에서는 저잡음 증폭기와 무바이어스 쇼트키 다이오드를 사용하여 W-Band에서 동작하는 밀리미터파 다이오드 검출기를 설계, 제작하였다. 향상된 감도 특성을 얻기 위해 다이오드 검출기는 검출기와 저잡음 증폭기로 구성된다. 저잡음 증폭기단은 발진을 제거하기 위해, 높은 저지 대역 특성을 갖도록 설계된 하우징에 저잡음 증폭기 MMIC 칩을 사용해 제작한다. 다이오드 검출기단은 단순한 구조를 사용하기 위해 무바이어스 쇼트기 다이오드를 사용하고, 저잡음 증폭기단과의 연결을 용이하도록 하기 위해 평면형으로 설계한다. 설계 및 제작된 W-band 검출기는 입력 전력 -45~-20 dBm의 변화에 대하여 20~500 mV의 출력 전압을 얻었다. 본 검출기는 수동 밀리미터파 영상 시스템에 적용할 수 있다. In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

LFI 30 and 44 GHz receivers Back-End Modules

The 30 and 44 GHz Back End Modules (BEM) for the Planck LowFrequency Instrument are broadband receivers (20% relative bandwidth)working at room temperature. The signals coming from the Front EndModule are amplified, band pass filtered and finally converted to DCby a detector diode. Each receiver has two identical branchesfollowing the differential scheme of the Planck radiometers. The BEMdesign is based on MMIC Low Noise Amplifiers using GaAs P-HEMTdevices, microstrip filters and Schottky diode detectors. Theirmanufacturing development has included elegant breadboard prototypesand finally qualification and flight model units. Electrical,mechanical and environmental tests were carried out for thecharacterization and verification of the manufactured BEMs. Adescription of the 30 and 44 GHz Back End Modules of Planck-LFIradiometers is given, with details of the tests done to determinetheir electrical and environmental performances. The electricalperformances of the 30 and 44 GHz Back End Modules: frequencyresponse, effective bandwidth, equivalent noise temperature, 1/f noiseand linearity are presented.

Active 60 GHz front-end with integrated dielectric antenna

The hybrid integration of a dielectric antenna together with an MMIC low-noise amplifier in a 60 GHz front-end is presented. It is demonstrated how a low-loss substrate integrated dielectric antenna can efficiently be interconnected at miniature scale with the coplanar waveguide input of the MMIC. The experimentally obtained return loss is better than 11 dB from 55 to 65 GHz. Transmission path loss measurements of a wireless link confirm the low-loss potential of this approach for millimetre-wave front-ends.

Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers

In this paper, we present three MMIC low-noise amplifiers using dual-gate GaAs HEMT devices in a balanced amplifier configuration. The designs target three different frequency bands including 4-9 GHz, 9-20 GHz, and 20-40 GHz. These dual-gate balanced designs demonstrate the excellent qualities of balanced amplifiers in terms of stability and matched characteristics, while demonstrating higher bandwidth than designs with a single-stage common-source device. Additionally, noise performance is excellent, with the 4-9 GHz LNA demonstrating <1.75 dB noise figure (NF), the 9-20 GHz LNA <2.75 dB NF and the 20-40 GHz LNA <2.5 dB NF. Demonstrating high gain and excellent bandwidth, the dual-gate devices seem a logical choice for the balanced amplifier topology.