Low-loss Waveguides Research Articles

Compact Substrate Integrated Waveguide Cubical Dielectric Resonator Antenna for fifth-generation applications

A comprehensive analysis of a wideband Cubical Dielectric Resonator Antenna is presented, specifically designed for 5G-NR wireless communication applications, focusing on the N257, and N258 frequency bands. This antenna exhibits symmetrical radiation patterns, a wider bandwidth, improved efficiency, and substantial gain characteristics. The design employs a low-loss substrate-integrated waveguide structure to enhance gain while reducing cross-polarization effects. This is accomplished through an innovative approach of establishing boundary conditions using copper wire stitching for vias, superseding the conventional soldering iron method, which guarantees minimal radiation leakage, compact dimensions, and reduced losses. The perforated dielectric resonator antenna possesses higher mode excitations, and implementing metallic strips on two resonator surfaces facilitates the simultaneous excitation of fundamental and higher-order modes, thereby yielding a broadband response. The overall dimensions of the antenna are 15.29 × 8.42 × 3.8 mm3(1.3×0.7×0.3)λ03, which facilitates a measured impedance bandwidth of 8.2 GHz, spanning from 24.4 to 32.6 GHz (28.7%), accompanied by a high gain of 8.1 dBi and efficiency levels reaching up to 94%. The prototype is constructed utilizing the standard printed circuit board technique, and simulation outcomes are derived using the High-Frequency Structure Simulator (HFSS).

B-038 A Novel Ultrasensitive Single-Molecule Counting Technology for Quantitation of Low Abundance Biomarkers

Abstract Background There is a need for sensitive, robust, and scalable analytical methods for accurate, early detection of disease using less invasive sampling methods. Often, smaller volumes and low marker concentrations present challenges to achieving sufficient sensitivity and accuracy with traditional immunoassay methods. This is particularly the case for measuring markers for Alzheimer's and other neurological diseases in blood, where levels are typically at much lower concentrations than in CSF. Here we introduce a novel ultrasensitive technology for flow-based single molecule detection in an optofluidic chip. We have developed an Ultrasensitive Detection Module (UDM) device and optofluidic cartridge that enable easy integration of this technology into existing immunoassay systems. UDM sensitivity data is shown for three prototype biomarker assays in comparison to the Lumipulse G1200 (Fujirebio Inc., Japan). We also present analytical validation data for three Alzheimer’s Disease plasma biomarker assays developed on a fully automated benchtop analyzer with integrated UDM detector. Methods Ultrasensitive detection is achieved by integrated low-loss waveguide in an optofluidic chip that enables maximal excitation of fluorescent molecules traveling through a narrow fluidic channel. The resulting high-intensity emission is detected as a single digital event, enabling individual molecules to be counted without need for amplification. Fluorescence-based immunoassays were developed for detection with the UDM using high performance monoclonal antibodies and reagents (Fujirebio Inc., Japan). Capture antibodies were immobilized on magnetic particles and detection antibodies conjugated to a fluorescent reporter construct (“reporter-Ab”). Multiple incubation and wash steps were followed by dissociation of immune complexes and separation of reporter-Ab from magnetic particles. Released reporter-Ab molecules were injected into the UDM device for digital detection. Signal to noise performance was evaluated in the UDM using reporter construct alone (no assay), as well as for prototype PSA, IL-6, and TSH assays, to establish baseline performance for analytical sensitivity. Plasma assays for pTau181, Aβ1-40, and Aβ1-42 were developed and optimized for the automated benchtop analyzer and validated for analytical sensitivity (LOD/LOQ), linearity, parallelism, precision and repeatability using clinical samples. Results Detection signal-to-noise testing of the reporter construct alone (no immunoassay) demonstrated up to 1000-fold higher sensitivity than the Lumipulse G1200. Prototype assays for PSA, TSH, and IL-6 showed up to 118-fold, 36-fold, and 80-fold higher signal to noise ratio, respectively, when compared to the Lumipulse G1200. Plasma assays for pTau181, Aβ1-40, and Aβ1-42 showed preliminary LLOQs calculated at 0.03 pg/mL, 0.17 pg/mL and 0.37 pg/mL, respectively. Conclusions We have developed a new single molecule counting platform able to detect neurological biomarkers at sub-pg/ml levels in plasma, with the potential to provide sensitive and accurate diagnostic testing of low abundance biomarkers in blood. Such technologies can create new clinical value through higher detection sensitivity and accuracy in areas like Alzheimer’s and other neurological diseases, supporting clinical research and translation to clinical practice.

A Low-Loss and High-Bandwidth Hollow Rectangular Dielectric Waveguide for Sub-THz Applications

A Low-Loss and High-Bandwidth Hollow Rectangular Dielectric Waveguide for Sub-THz Applications

Brillouin laser pumped tunable low-threshold mid-IR Kerr comb at 2 μm

Optical frequency combs in the 2 μm wavelength region are important for applications ranging from sensing of gases such as CO2 and CO to optical communications, LIDAR, and gravitational wave detection. The development of low-loss waveguides and high-Q microresonators with anomalous dispersion and the availability of tunable narrow linewidth lasers around 1.55 μm have enabled the realization of small footprint soliton combs and low-threshold Kerr combs in this wavelength region; demonstrations of microresonator frequency combs in the 2 μm wavelength region have been limited. Here, we harness an intracavity pumping scheme to demonstrate a low-threshold (<100 mW) microresonator Kerr comb at 2 μm. We exploit Brillouin lasing in a silica microsphere (∼310 μm diameter) to create an intracavity pump, which then generates a ∼140 nm wide Kerr comb in the backscattered Stokes direction. We demonstrate the tolerance of the comb generation scheme to microsphere dimensions and the input pump wavelength by achieving Kerr comb generation in microspheres of diameters ranging from 295 to 318 μm and also at different input pump wavelengths for a particular microsphere diameter. Intracavity pumping opens up opportunities for the development of soliton combs and Kerr combs in the mid-IR wavelength region for applications such as dual-comb spectroscopy, LIDAR, and optical communications.

Conformation-Confined Organic Butterfly-Molecule with High Photoluminescence Efficiency, Deep-Blue Amplified Spontaneous Emission, and Unique Piezochromic Luminescence.

Organic fluorophores with tunable π-conjugated paths have attracted considerable attention owing to their diverse properties and promising applications. Herein, we present a tailored butterfly like molecule, 2,2'-(2,5-bis (2,2-diphenylvinyl)-1,4-phenylene)dinaphtha-lene (BDVPN), which exhibits diverse photophysical features in its two polymorphs. The BP phase crystal, with its "aligned wings" conformation, possesses emissive characteristics that are nearly identical to those in dilute solutions. In contrast, the BN phase crystal, which adopts an "orthogonal wings" conformation, exhibits an unusual hypsochromic-shifted emission compared to its dilute solution counterparts. This intriguing hypsochromic-shifted emission originates from the reduction in the effective conjugated length of the molecular skeleton. Notably, BN phase crystals also exhibit exceptional optical performance, featuring high-efficiency emission (76.6%), low-loss optical waveguides (0.571 dB mm-1), deep-blue amplified spontaneous emission (ASE) with a narrow full width at half maximum (FWHM: 6.4 nm), and a unique 200 nm bathochromic shift of piezochromic luminescence.

Epitaxial Growth of Two-Dimensional Organic Crystals with In-Plane Heterostructured Domain Regulation.

Complex organic lateral heterostructures (OLHs) with spatial distribution of two or more chemical components are crucial for designing and realizing unique structure-dependent optoelectronic applications. However, the precise design of well-defined OLHs with flexible domain regulation remains a considerable challenge. Herein, we present a stepwise solution self-assembly method to synthesize two-dimensional (2D) OLHs with a central rhombus domain and a lateral region featuring tunable blue and green emission based on the sequential nucleation and growth of 2D crystals. By controlling the initial crystallization time of 2,6-diphenylanthracene, the rhombic length ratio (α) of the multicolor-emissive part of the 2D OLHs is precisely modified. Furthermore, a third lateral layer is constructed on the resulting OLHs, demonstrating scalable lateral regulation. Significantly, these prepared 2D OLHs exhibit great excitation position-dependent waveguide characteristics and enable a 0.06 dB/μm low-loss waveguiding, which are conducive to photon transport and conversion for photonic integrated circuits. This work provides a stepwise strategy for the accurate fabrication of 2D OLHs, fabricating the developments of next-generation optoelectronics devices.

Low-loss and low-cross talk polarization-insensitive multimode silicon waveguide crossing.

A polarization-insensitive multimode silicon waveguide crossing is investigated and experimentally characterized in this Letter. By employing the particle swarm optimization (PSO) algorithm and finite difference time domain (FDTD) method, the lengths and widths of the waveguides in the proposed device are optimized for attaining wide bandwidth, small insertion loss (IL), low cross talk (CT), and compact size. Measurement results reveal that the footprint of the presented device is 11.92 μm × 11.92 μm. From 1520 to 1600 nm, the measured insertion loss and cross talk are smaller than 0.67 dB and -28.6 dB in the case of the TE0 mode, lower than 0.65 dB and -28.7 dB in the case of the TE1 mode, less than 0.48 dB and -36.3 dB in the case of the TM0 mode, and lower than 0.62 dB and -28 dB in the case of the TM1 mode.

Investigation of Q degradation in low-loss Si3N4 from heterogeneous laser integration.

High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here, Si3N4 resonator intrinsic Qs over 100 million are demonstrated on a fully integrated heterogeneous laser platform. Qi is measured throughout laser processing steps, showing degradation down to 50 million from dry etching, metal evaporation, and ion implant steps, and controllable recovery to over 100 million from annealing at 250 ∘C-350 ∘C.

(Invited) Colloidal Quantum Dot Laser Diodes: Three Decades in the Making

It has been 30 years since the first demonstration of lasing with semiconductor nanocrystals embedded in glass matrices1 – the samples akin to standard colored glass filters. Following this discovery, it took three years to realize lasing with epitaxial QDs2 and six more years to demonstrate the effect of amplified spontaneous emission (ASE) – a precursor of lasing – with colloidal QDs.3 So far, all reported studies into colloidal QD lasing have utilized optically excited samples. However, most of the prospective technological applications require electrically pumped devices, that is, laser diodes. The realization of such devices is complicated by multiple problems, widely deemed insurmountable. These include extremely fast nonradiative Auger recombination of optical-gain-active multicarrier states, poor stability of QD films under high current densities required for lasing, and unfavorable balance between optical gain and optical losses in electroluminescent (EL) devices wherein a gain-active QD medium is a small fraction of an overall device stack comprising multiple optically lossy charge-transport layers.Here we resolve these problems and achieve strong ASE with electrically driven QDs.4 To demonstrate this effect, we employ compact, continuously graded QDs with strongly suppressed Auger recombination incorporated into a low-loss photonic waveguide integrated into a pulsed light-emitting diode capable of operating at current densities of up to ~2000 A cm-2. These prototype ASE-type laser diodes exhibit strong, broad-band optical gain and demonstrate low-threshold, room-temperature ASE which leads to intense, edge-emitted EL whose instantaneous power reaches ~200 mW. 1. Vandyshev, Y. V., Dneprovskii, V. S., Klimov, V. I. & Okorokov, D. K. Lasing on a transition between quantum-well levels in a quantum dot. JETP Lett. 54, 442-445 (1991).2. Kistaedter, N., Ledentsov, N. N., Grundmann, M., Bimberg, D., Ustinov, V. M., Ruvimov, S. S., Maximov, M. V., Kopev, P. S., Alferov, Z. I. & Richter, U. Low threshold, large To injection laser emission from (InGa)As quantum dots. Electron. Lett. 30, 1416 (1994).3. Klimov, V. I., Mikhailovsky, A. A., Xu, S., Malko, A., Hollingsworth, J. A., Leatherdale, C. A., Eisler, H. J. & Bawendi, M. G. Optical gain and stimulated emission in nanocrystal quantum dots. Science 290, 314-317 (2000).4. Ahn, N., Livache, C., Pinchetti, V., Jung, H., Jin, H., Hahm, D., Park, Y.-S. & Klimov, V. I. Electrically driven amplified spontaneous emission from colloidal quantum dots. Nature 617, 79-85 (2023).

Fast and low energy-consumption integrated Fourier-transform spectrometer based on thin-film lithium niobate

Abstract Integrated miniature spectrometers have impacts in industry, agriculture, and aerospace applications due to their unique advantages in portability and energy consumption. Although existing on-chip spectrometers have achieved breakthroughs in key performance metrics, such as, a high resolution and a large bandwidth, their scanning speed and energy consumption still hinder practical applications of such devices. Here, a stationary Fourier transform spectrometer is introduced based on a Mach–Zehnder interferometer structure on thin-film lithium niobate. Long and low-loss spiral waveguides with electro-optic tuning are adopted as the optical path scanning elements with a half-wave voltage of 0.14 V. A high resolution of 2.1 nm and a spectral recovery with a bandwidth of 100 nm is demonstrated under a high-speed and high-voltage scanning in the range of −100 V to +100 V at up to 100 KHz. A low energy consumption in the μJ scale per scan is also achieved.

Low-loss silica waveguide 1×8 thermo-optic switch based on large-scale multimode interference couplers

Optical switches play key role in signal crossing and interconnection. Low-loss and compact optical switches are highly demanded in on-chip optical routing. A silica waveguide 1 × 8 thermo-optic switch based on cascaded 1 × 8 multimode interference (MMI) and 8 × 8 MMI couplers is experimentally demonstrated. Beam propagation method is adopted in the theoretical design and optimization. Standard CMOS technology fabrication is used in switch preparation. Air trenches are introduced to enhance the thermal modulation. At wavelength 1550 nm, the measured insertion loss and crosstalk of this 1 × 8 switch is less than 3.69 dB and −16.29 dB, respectively. And the extinction ratio is larger than 16.68 dB for all routing states. The rise time and fall time are 1.0 ms and 1.24 ms respectively. Compared with the 8-channel switch based on cascaded stages structure, the size reduces by 30 %. With future bandwidth improvement, this demonstrated switch has good potentials in the application of all-optical network routing.

Low-threshold green lasing in heterogeneously integrated InGaN-based micro-rings covered by distributed Bragg reflectors on Si (100)

In this work, combining a series of wafer bonding, laser lift-off and chemical mechanical polishing processes, submicron-thick wafer-scale GaN-based thin-film epilayers are successfully transferred on Si (100), which provides a heterogeneous platform for fabricating microcavities for nitride-based integrated photonics. Low-threshold lasing via optical pumping from these transferred dry-etched green micro-ring cavities on Si is demonstrated by covering the whole micro-rings with dielectric distributed Bragg reflectors (DBRs), which greatly reduces the lasing threshold upon a better optical confinement at the ring rim. A high quality-factor of ∼3800 can be observed from the micro-rings beyond the lasing threshold under pulsed excitation conditions. Furthermore, room-temperature continuous-wave (CW) lasing at a wavelength of 521.7 nm with an ultralow threshold of 0.35 kW/cm2 is achieved. Our results suggest the use of a burying DBR layer notably improves the WGM microcavity confinement, providing insights for the design of low-threshold micro-lasers and low-loss waveguides for potential integrated photonic applications in the visible light range on the Si platform.

Influence of discontinuities on photonic waveguides.

Fabrication-induced imperfections in photonic wire waveguides, such as roughness, stitching errors, and discontinuities, degrade their performance and thereby lower the yield of large-scale systems. This degradation is primarily due to the high insertion losses induced by imperfections, which scale nonlinearly with the index contrast in wire waveguides. Here we investigate the influence of discontinuities in photonic waveguides and later show a platform that is robust to fabrication imperfections. Our platform is based on an array of silicon nano-pillars, arranged to form a sub-wavelength (SW) grating waveguide. We focus on investigating the robustness by considering an abrupt break in the waveguide, as an extreme case of discontinuity. We show that sub-wavelength silicon waveguides are robust against unwanted large discontinuities relative to the operating wavelength. We measure a transmission loss of <2.2 dB at 1550 n m, for a discontinuity of length 2.1 μ m, when compared to more than 7 d B of loss in conventional silicon wire waveguides for the same discontinuity. Our results show that this mode of protection is broadband, covering the entire telecommunication band (λ =1500-1600 nm). We believe that this investigation of the influence of discontinuities in photonic waveguides could be a step toward the realization of low-loss optical waveguides.

Low-loss and high-index contrast ultraviolet-C free-standing waveguides made of thermal silicon oxide.

Photonics in the ultraviolet provides an avenue for key advances in biosensing, pharmaceutical research, and environmental sensing. However, despite recent progress in photonic integration, a technological solution to fabricate photonic integrated circuits (PICs) operating in the UV-C wavelength range, namely, between 200 and 280 nm, remains elusive. Filling this gap will open opportunities for new applications, particularly in healthcare. A major challenge has been to identify materials with low optical absorption loss in this wavelength range that are at the same time compatible with waveguide design and large-scale fabrication. In this work, we unveil that thermal silicon oxide (TOX) on a silicon substrate is a potential candidate for integrated photonics in the UV-C, by removing the silicon substrate under selected regions to form single-side suspended ridge waveguides. We provide design guidelines for low-loss waveguide geometries, avoiding wrinkling due to residual intrinsic stress, and experimentally demonstrate waveguides that exhibit optical propagation losses below 3 and 4 dB/cm at a wavelength of 266 nm with claddings of air and water, respectively. This result paves the way for on-chip UV-C biological sensing and imaging.

Optical Amplification at 1.5µm in ErIII Coordination Polymer-Doped Waveguides Based on Intramolecular Energy Transfer.

9,9-bis (diphenylphosphorylphenyl) fluorene (FDPO) and dibenzotetrathienoacene (DBTTA), are synthesized as the neutral and anionic ligands, respectively, to prepare the ErIII coordination polymer [Er(DBTTA)3(FDPO)]n. Based on the intramolecular energy transfer, optical gains at 1.5µm are demonstrated in [Er(DBTTA)3(FDPO)]n-doped polymer waveguides under excitations of low-power light-emitting diodes (LEDs) instead of laser pumping. A ligand-sensitization scheme between organic ligands and Er3+ ions under an excitation of an ultraviolet (UV) LED is established. Relative gains of 10.5 and 8.5dBcm-1 are achieved at 1.53 and 1.55µm, respectively, on a 1-cm-long SU-8 channel waveguide with a cross-section of 2×3µm2 and a 1.5-µm-thick [Er(DBTTA)3(FDPO)]n-doped polymethylmethacrylate (PMMA) as upper cladding. The ErIII coordination polymer [Er(DBTTA)3(FDPO)]n can be conveniently integrated with various low-loss inorganic waveguides to compensate for optical losses in the C-band window. Moreover, by relying on the intramolecular energy transfer and UV LED top-pumping technology, it is easy to achieve coupling packaging of erbium-doped waveguide amplifiers (EDWAs) with pump sources in planar photonic integrated chips, effectively reducing the commercial costs.

A Low-Loss Hollow-Core Waveguide Bundle for Terahertz Imaging under a Cryogenic Environment

A Low-Loss Hollow-Core Waveguide Bundle for Terahertz Imaging under a Cryogenic Environment

3D Laser Writing of Low-Loss Cross-Section-Variable Type-I Optical Waveguide Passive/Active Integrated Devices in Single Crystals.

Optical waveguides fabricated in single crystals offer crucial passive/active optical components for photonic integrated circuits. Single crystals possess inherent advantages over their amorphous counterpart, such as lower optical losses in visible-to-mid-infrared band, larger peak emission cross-section, higher doping concentration. However, the writing of Type-I positive refractive index modified waveguides in single crystals using femtosecond laser technology presents significant challenges. Herein, this work introduces a novel femtosecond laser direct writing technique that combines slit-shaping with an immersion oil objective to fabricate low-loss Type-I waveguides in single crystals. This approach allows for precise control of waveguide shape, size, mode-field, and refractive index distribution, with a spatial resolution as high as 700nm and a high positive refractive index variation on the order of 10-2, introducing new degrees of freedom to design and fabricate passive/active optical waveguide devices. As a proof-of-concept, this work successfully produces a 7mm-long circular-shaped gain waveguide (≈10µm in diameter) in an Er3+-doped YAG single crystal, exhibiting a propagation loss as low as 0.23dBcm-1, a net gain of ≈3dB and a polarization-insensitive character. The newly-developed technique is theoretically applicable to arbitrary single crystals, holding promising potential for various applications in integrated optics, optical communication, and photonic quantum circuits.

Low-loss nanoscale zero-index metawaveguides and metadevices

Zero-index metamaterials exhibit a uniform spatial phase distribution, promising numerous applications such as efficient electromagnetic tunneling and high-fidelity optical computing. These applications necessitate an integrated, low-loss zero-index waveguide platform for guiding, routing, and interfering light. Nevertheless, existing zero-index metamaterials grapple with substantial footprints, high losses, and limited flexibility. Here, we present low-loss nanoscale zero-index metawaveguides enabled by quasi-bound states in the continuum, formed through destructive interferences along in-plane and out-of-plane directions. This metawaveguide’s propagation loss is 2 orders of magnitude lower than that of the state-of-the-art zero-index waveguide. Leveraging the low loss and flexibility of this metawaveguide, we realized a zero-index metaring for the first time. This low-loss zero-index metawaveguide offers a versatile platform for integrated photonic circuits with minimal phase errors for classical and quantum information processing.

Optimization of waveguide fabrication processes in lithium-niobate-on-insulator platform.

Lithium niobate (LN) is used in diverse applications such as spectroscopy, remote sensing, and quantum communications. The emergence of lithium-niobate-on-insulator (LNOI) technology and its commercial accessibility represent significant milestones. This technology aids in harnessing the full potential of LN's properties, such as achieving tight mode confinement and strong overlap with applied electric fields, which has enabled LNOI-based electro-optic modulators to have ultra-broad bandwidths with low-voltage operation and low power consumption. Consequently, LNOI devices are emerging as competitive contenders in the integrated photonics landscape. However, the nanofabrication, particularly LN etching, presents a notable challenge. LN is hard, dense, and chemically inert. It has anisotropic etch behavior and a propensity to produce material redeposition during the reactive-ion plasma etch process. These factors make fabricating low-loss LNOI waveguides (WGs) challenging. Recognizing the pivotal role of addressing these fabrication challenges for obtaining low-loss WGs, our research focuses on a systematic study of various process steps in fabricating LNOI WGs and other photonic structures. In particular, our study involves (i) careful selection of hard mask materials, (ii) optimization of inductively coupled plasma etch parameters, and finally, (iii) determining the optimal post-etch cleaning approach to remove redeposited material on the sidewalls of the etched photonic structures. Using the recipe established, we realized optical WGs with total (propagation and coupling) loss value of -10.5 dB, comparable to established values found in the literature. Our findings broaden our understanding of optimizing fabrication processes for low-loss lithium-niobate waveguides and can serve as an accessible resource in advancing LNOI technology.

Low-loss silicon waveguide and an ultrahigh-Q silicon microring resonator in the 2 µm wave band.

Silicon photonic-integrated circuits (PICs) operating in the 2 µm wave band are of great interest for spectroscopic sensing, nonlinear optics, and optical communication applications. However, the performance of silicon PICs in this wave band lags far behind the conventional optical communication band (1310/1550 nm). Here we report the realization of a low-loss waveguide and an ultrahigh-Q microring resonator in the 2 µm wave band on a standard 200 mm silicon photonic platform. The single-mode strip waveguide fabricated on a 220 nm-thick silicon device layer has a record-low propagation loss ∼0.2 dB/cm. Based on the low-loss waveguide, we demonstrate an ultrahigh-Q microring resonator with a measured loaded Q-factor as high as 1.1 × 106 and intrinsic Q-factor of 2 × 106, one order of magnitude higher than prior silicon resonators operating in the same wave band. The extinction ratio of the resonator is higher than 22 dB. These high-performance silicon photonic components pave the way for on-chip sensing applications and nonlinear optics in the 2 µm wave band.