Low Fill Factor Research Articles

A Surface-Reconstructed Bilayer Heterojunction Enables Efficient and Stable Inverted Perovskite Solar Cells.

The efficiency of perovskite photovoltaics remains distant from their theoretical limits, primarily due to high photovoltage losses. Here a strategy is reported to minimize voltage losses by reconstructing the perovskite surface into a bilayer heterojunction (BLH) structure. Unlike conventional low-dimensional capping layers, typically constrained to a few nanometers to prevent low fill factors, this methodology facilitates a more comprehensive reaction with surface defects, allowing a more substantial capping layer (≈50 nanometers) without compromising charge transport integrity. Time-resolved microwave conductivity analysis indicates a significant reduction in trap density at the top region of the perovskite film, showing an order of magnitude lower than that of the pristine sample. Incorporating this BLH in inverted cells results in a remarkably low photovoltage deficit of 325mV, leading to a power conversion efficiency (PCE) of 26.1% (25.72% certified). The encapsulated device maintains 94% of its original efficiency after 1200h of maximum power point tracking under one sun illumination at 65°C.

High efficiency Sb and Ag double doped Cu2ZnSn(S, Se)4 thin film solar cells realized by post-heat treatment process of heterojunction

Cu2ZnSn (S, Se)4 (CZTSSe) semiconductors have become a recent focus of research owing to their cost-effectiveness, environmental friendliness, and high efficiency. However, insufficient band alignment between the CZTSSe absorption layer and the CdS buffer layer significantly hampers the high conversion efficiency of CZTSSe devices. In this study, problems related to energy-band matching were solved by the post-heat treatment (PHT) of the absorber and buffer layers. Based on obtaining a high-quality absorption layer through double-doped (Cu, Ag)2Zn(Sn, Sb)(S, Se)4 (CAZTSSSe), the impact of the PHT process of CAZTSSSe/CdS on the device performance and heterojunction quality was investigated. The PHT process promoted the reciprocating motion of elements in the heterojunction region, directly inducing the movement of Cd towards the absorption layer and Cu towards the buffer layer. Furthermore, the PHT method enhances the recrystallization of CdS, resulting in the formation of a CdS layer with excellent crystalline quality. After PHT processing, a more favorable conduction band arrangement was obtained, which helps to reduce non-radiative recombination. Ultimately, when the PHT temperature reaches 200 °C, we get an optimal device with an efficiency of up to 9.44 %, as open circuit voltage (VOC) escalates to 431 mV, and lower fill factor (FF) attains 55.63 %. It is believed that this PHT process can be better applied in thin film cells to obtain high-efficiency solar cells.

An Optimization Path for Sb2(S,Se)3 Solar Cells to Achieve an Efficiency Exceeding 20.

Antimony selenosulfide, denoted as Sb2(S,Se)3, has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb2(S,Se)3 solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage (Voc) losses and fill factor (FF) losses. This study delves into the theoretical relationship between Voc and FF, revealing that, under conditions of low Voc and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address Voc and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb2(S,Se)3 solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in Voc, pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced Voc loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb2(S,Se)3, achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting Voc and FF losses in Sb2(S,Se)3 solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.

Interfacial modulation by ammonium salts in hole transport layer free CsPbBr3 solar cells with fill factor over 86 %

CsPbBr3-based perovskite solar cells (PSCs) are potential candidates for the next-generation photovoltaic technology owing to their robust stability. Nevertheless, the inorganic CsPbBr3 PSCs using carbon electrode without hole transport layer usually suffer from severe non-radiative recombination loss at CsPbBr3/Carbon interfaces, thereby generating low fill factors (FFs) and further limiting the improvement of power conversion efficiencies (PCEs). To circumvent this issue, we proposed a universal interfacial engineering strategy to reduce the trap-assisted recombination through depositing butylammonium bromide (BABr) on the surface of CsPbBr3 films, which would enhance the FF and subsequent PCE of inorganic PSCs. The experimental results illustrate that the BABr modification could not only improve the morphology and phase purity of the inorganic perovskite films, but also adjust the energy level alignment between the CsPbBr3 layer and carbon electrode. After the optimization of BABr concentrations, we fabricated the BABr-modified device delivered an impressive PCE of 9.86 % with an extreme high FF over 86 %, which is one of the highest values achieved among the reported inorganic PSCs. Moreover, the PCE of unsealed CsPbBr3 device with BABr exhibited almost no attenuation after 90 days storage under the ambient atmosphere.

Dielectric Bragg Reflector as Back Electrode for Semi‐Transparent Organic Solar Cells with an Average Visible Transparency of 52%

A crucial challenge in the development of semi‐transparent solar cells is to maintain a reasonable power conversion efficiency (PCE) while reaching a high average visible transparency (AVT). Typically, organic semiconductors are favorable for this application since they can selectively absorb infrared light while transmitting visible light. This ability stems from limited electronic states at high(er) energies in contrast to inorganic semiconductors with their typical rise of the absorption coefficient toward higher photon energies. To increase PCE at high AVTs, a series of infrared dielectric Bragg reflectors is developed for semi‐transparent organic solar cells. Using the multi‐layered back electrode (TiO2|SiN|TiO2|AZO|Ag|AZO) with PV‐X Plus as photoactive layer and a metal‐free PEDOT:PSS top electrode, a light utilization efficiency (LUE = AVT × PCE) of up to 4.32% is achieved, together with an AVT of 47.9%. Although the short circuit current and AVT agree well with optical simulations, a low fill factor (FF) and partial shunting limit the overall device performance. Using ZnO and PFN‐Br as additional electron transport layers and modifying the back electrode stack (TiO2|SiO2|TiO2|AZO|Ag|AZO) accordingly leads to an LUE of up to 4.6% with a remarkable AVT of 51.9% and a maximum PCE of 8.79%.

Realizing over 18% Efficiency for M‐Series Acceptor‐Based Polymer Solar Cells by Improving Light Utilization

AbstractM‐series molecules are one kind of promising acceptor‐donor‐acceptor (A‐D‐A)‐type acceptors for constructing high‐performance organic solar cells (OSCs). However, their power conversion efficiencies (PCEs) are lagging behind that of current state‐of‐the‐art OSCs, limited by the relatively low fill factor (FF) and photocurrent. Herein, combined strategies of layer‐by‐layer (LBL) deposition and interface engineering are conducted to systematically improve light utilization and thus PCEs for M36‐based OSCs. Through choosing a proper processing solvent, a PCE of 17.3% with an FF of 77.9% is achieved for the resulting LBL devices, much higher than those (15.9%/74.0%) from the blend‐casting devices. The improvement is assigned to the favorable morphological evolution that facilitates carrier generation and transport as well as reduces charge recombination. More importantly, light‐harvesting of the active layers can be enhanced upon employing a self‐assembled monolayer of (2‐(9H‐carbazol‐9‐yl)ethyl)phosphonic acid (2PACz) instead of the widely used PEDOT:PSS as the hole‐selecting layer, due to the decreased parasitic absorption of the former. Consequently, 2PACz‐based LBL devices exhibit significantly increased photocurrent, affording a PCE up to 18.2%, which is the highest among the reported A‐D‐A‐type acceptor‐based OSCs. These results deliver important strategies to enhance the performance of OSCs and thus highlight the great potential of M‐series acceptors for practical applications.

Reactive DC Sputtered TiO2 Electron Transport Layers for Cadmium‐Free Sb2Se3 Solar Cells

AbstractThe evolution of Sb2Se3 heterojunction devices away from CdS electron transport layers (ETL) to wide bandgap metal oxide alternatives is a critical target in the development of this emerging photovoltaic material. Metal oxide ETL/Sb2Se3 device performance has historically been limited by relatively low fill factors, despite offering clear advantages with regards to photocurrent collection. In this study, TiO2 ETLs are fabricated via direct current reactive sputtering and tested in complete Sb2Se3 devices. A strong correlation between TiO2 ETL processing conditions and the Sb2Se3 solar cell device response under forward bias conditions is observed and optimized. Numerical device models support experimental evidence of a spike‐like conduction band offset, which can be mediated, provided a sufficiently high conductivity and low interfacial defect density can be achieved in the TiO2 ETL. Ultimately, a SnO2:F/TiO2/Sb2Se3/P3HT/Au device with the reactively sputtered TiO2 ETL delivers an 8.12% power conversion efficiency (η), the highest TiO2/Sb2Se3 device reported to‐date. This is achieved by a substantial reduction in series resistance, driven by improved crystallinity of the reactively sputtered anatase‐TiO2 ETL, whilst maintaining almost maximum current collection for this device architecture.

Impedance spectroscopy using microscopic reference electrodes to analyze different rate-determining steps in aqueous dye-sensitized solar cells using nitroxide radicals as redox mediators

For new components in dye-sensitized solar cells (DSSCs), identification and quantification of rate-limiting steps is needed to evaluate their applicability. This is particularly important if fundamental changes are studied. In this work, the use of a micro-reference electrode in DSSCs is proposed to increase the significance of electrochemical impedance spectroscopy. The recombination of charge carriers at the photoanode and the regeneration of redox mediators at the counter electrode, which typically occur on similar timescales, could be studied separately but simultaneously in cells under operating conditions. This is particularly useful in the study of water-based DSSCs. Here, cells with 2,2,6,6-Tetramethylpiperidinoxyl (TEMPO) or 4-Hydroxy-TEMPO (OH-TEMPO) as redox mediators using additives like 1-Methylbenzimidazole (MBI) are discussed. It was revealed that the charge transfer resistance (RCE) for the reduction of the oxidized redox mediator at the counter electrode (CE) limits the fill factor (FF) of such DSSCs. TEMPO/MBI electrolytes yielded low RCE and high FF, whereas OH-TEMPO in otherwise identical cells resulted in large RCE, low FF, and low conversion efficiencies. This indicates that the interface between the CE and the electrolyte significantly influences the DSSC performance of these cells and strongly depends on the electrolyte composition. Important optimization strategies could be discussed based on the present results.

Solvent‐Assisted Surface Modification Using Metallocene‐Based Molecules for High‐Efficiency Perovskite/Silicon Tandem Solar Cells

AbstractThe presence of a high density of defects at the perovskite/electron transport layer (ETL) interface results in significant nonradiative recombination losses, thus impeding the efficiency enhancement of perovskite/silicon tandem solar cells (TSCs). In this investigation, a metallocene‐based molecule, cobalt (III) dichlorophene hexafluorophosphate (CcPF6), is employed for perovskite surface passivation. To maximize its efficacy, the molecule is dissolved in a mixed solvent of acetonitrile and chlorobenzene, leading to the reconstruction of the perovskite surface and effective passivation of surface defects. This modification strategy substantially enhances the overall efficiency of perovskite/silicon tandem solar cells by mitigating the issue of low fill factor resulting from non‐uniform coating of the top perovskite layer on the textured silicon bottom cell. Leveraging a double‐sided textured silicon heterojunction (HJT) bottom cell, a certified power conversion efficiency (PCE) of 30.43% for a monolithic perovskite/silicon TSC (1.00 cm2) is achieved, featuring an open‐circuit voltage (Voc) of 1.93 V and a fill factor (FF) of 78.43%. After storage in the drying cabinet (5% humidity at 20 °C) for 1000 h, the device retains 94.27% of its initial performance.

Effect of Size and Morphology of Different ZnO Nanostructures on the Performance of Dye-Sensitized Solar Cells

In this study, the influence of zinc oxide (ZnO) nanostructures with various morphologies on the performance of dye-sensitized solar cells (DSSCs) was investigated. Photo-electrodes were fabricated incorporating ZnO transport layers of distinct nanoscale morphologies—namely nanoparticles, microballs, spiky microballs, belts, and triangles—and their respective current–voltage characteristics were evaluated. It was observed that the DSSCs employing the triangular ZnO nanostructures, with a side length of approximately 30 nm, achieved the highest power conversion efficiency of 2.62%. This was closely followed by the DSSCs using spherical nanoparticles with an average diameter of approximately 20 nm, yielding an efficiency of 2.54%. In contrast, the efficiencies of DSSCs with microball and spiky microball ZnO nanostructures were significantly lower, measuring 0.31 and 1.79%, respectively. The reduction in efficiency for the microball-based DSSCs is attributed to the formation of micro-cracks within the thin film during the fabrication process. All DSSC configurations maintained a uniform active area of 4 mm². Remarkably, the highest fill factor of 59.88% was recorded for DSSCs utilizing the triangular ZnO morphology, with the spherical nanoparticles attaining a marginally lower fill factor of 59.38%. This investigation corroborates the hypothesis that reduced particle size in the transport layer correlates with enhanced DSSC performance, which is further amplified when the nanoparticles possess pointed geometries that induce strong electric fields due to elevated charge concentrations.

Tail states suppression via surface-modification of wide-bandgap perovskites for high-efficiency all-perovskite photovoltaic tandems

As an essential light-absorbing material in perovskite-based tandem solar cells, wide-bandgap (WBG) perovskite has garnered extensive attention. Nevertheless, due to severe non-radiative recombination from tail states, as well as photoinduced phase segregation and unoptimized charge transfer, WBG perovskite solar cells (PSCs) typically display significant open-circuit voltage (VOC) loss and low fill factor (FF). In this work, we report to modify the 1.68 eV WBG perovskite film upon optimized surface passivation with 1,3-propane-diammonium iodide (PDAI2). Time-resolved microwave conductivity measurement is employed to analyze the tail states, mobilities of charge carriers and the rate constants of recombination in perovskite films. The results indicate that the optimized surface modification strategy not only enhances film quality, boosts carrier transport, but also suppresses tail states and therefore diminishes non-radiative recombination, consequently elevating the VOC and FF of the device. Hence, the PDAI2-assisted WBG PSCs deliver an optimal efficiency of 21.48 %, accompanied by a VOC of 1.243 V. Furthermore, the integration of a narrow-bandgap tin–lead PSC with a semi-transparent WBG PSC results in a four-terminal perovskite/perovskite tandem solar cell, showcasing an efficiency surpassing 28 %. Our research offers a practical approach for producing efficient WBG PSCs and tandem solar cells.

Laser Scribing for Perovskite Solar Modules of Long‐Term Stability

Although the efficiency of hybrid lead‐halide perovskite solar cells has been significantly improved, the efficiency gap between small‐area cells and large modules continues to be a considerable challenge. Laser scribing is essential for realizing high‐quality monolithic connections; however, the laser‐induced material changes and their correlation with device performance have not been yet well understood, in particular for the perovskite material systems. In this study, the effect of P3 laser processing conditions on device performance and stability is explained. The most interesting finding is an improvement in open‐circuit voltage (VOC) after aging and long‐term stability under low‐laser‐overlap conditions that avoid direct laser exposure to perovskite material system as a source of material degradation. It is found that a high‐laser‐overlap during P3 results in a lower fill factor after aging and accelerated degradation due to larger portion of perovskite directly exposed to laser during the scribing process. The increased VOC under low‐overlap conditions is attributed to the increased PbI2 formation in the P3 region. Moreover, a minimal pulse overlap is favorable for preserving long‐term device stability. Finally, a perovskite minimodule with an efficiency of 20.24% is successfully developed as a result of these findings.

Controlled Fabrication of Composite Transparent Electrodes for Semitransparent Perovskite Solar Cells with above 84% Fill Factor

In the quest to develop efficient semitransparent perovskite solar cells (ST‐PSCs), the primary challenge lies in transparent electrode fabrication. n–i–p‐type ST‐PSCs often suffer from low fill factors (FF) and power conversion efficiency (PCE), attributed to the undesirable buffer layer/transparent conductive oxide combination of the transparent electrode. In this context, this study proposes an efficient composite transparent electrode (CTE) system comprising an ultrathin MoO3 buffer layer (5 nm) and low‐power sputtered indium zinc oxide (45 W–220 nm). The electrode demonstrates excellent compatibility with Spiro‐OMeTAD‐based devices, effectively addressing the low FF and PCE challenges of ST‐PSCs. Employing the new CTE, the best‐performing ST‐PSCs with the absorption edge at 1.57 eV achieve a remarkable PCE of 21.96% with an FF of up to 83.80%. More transparent ST‐PSCs with thickness‐modulated absorbers and average transmittance of 50.77% at 600–1200 nm wavelength result in a PCE of up to 20.91% with the highest known FF of 84.02%. This study presents a general and viable approach for fabricating efficient ST‐PSCs.

Remarkable enhancement of graphene/Si Schottky junction solar cell performance with effective chemical treatments

Graphene has been employed in the preparation process of solar cells due to its unique properties. It has been combined with silicon (Si) substrates for preparing the top window structure of a graphene/n-Si Schottky junction solar cell. However, the usage of the mono-graphene layer results in a low fill factor of prepared samples. In addition, the residue of PMMA is one more reason for the low fill factor. Another disadvantage of reported devices is the poor stability of doped devices under ambient conditions. In this work, 2 low-cost and simple chemical treatments are employed to eliminate the residue of PMMA after the wet transfer procedure of graphene. Besides, the fill factor is significantly developed by transferring more than a residue-free graphene layer. An efficiency of 6% is obtained after preparing devices with 3 graphene layers, and the recorded efficiency of 14.2% is attained by the HNO3 dopant. Additionally, doped devices show excessive stability for 2 months under ambient conditions, retaining around 96% of their initial efficiency. We attribute this development to the donation process of electrons achieved by chemical treatments to graphene. This work presents an approach for providing low-cost, simple, high performance and stable graphene/Si Schottky solar cells.

Ammonium Additive Engineering in Antisolvents for Improving Perovskite/Charge-Transport-Layer Interfaces toward Efficient Lead-Tin Alloyed Perovskite Solar Cells.

Although significant advancements have been achieved in lead-tin (Pb-Sn) alloyed perovskite solar cells (PSCs), their power conversion efficiency (PCE) remains inferior to that of their Pb-based counterparts, primarily due to higher open-circuit voltage (Voc) losses and lower fill factors (FFs). Herein, we report both perovskite top and bottom interfacial improvements by incorporating a facile fluorophenylethylammonium iodide (p-FPEAI)/ethyl acetate (EA) solution during the film crystal growth. Based on the analysis of perovskite crystallization, film growth, and strain relaxation, the mechanisms behind these interfacial improvements have been well understood. Furthermore, p-FPEAI could reduce the defect density and nonradiative recombination losses, thus attributing to the improved Voc and FF. Finally, the treated device achieved a PCE of 20.14% with a Voc of up to 0.84 V, which is among the highest reported values so far for Pb-Sn alloyed PSCs without additional precursor additives. In addition, the unencapsulated p-FPEAI-treated device maintained its initial efficiency of approximately 92% after being kept in a nitrogen atmosphere for 1 month, in contrast to the control device which retained only 30% of its initial value. Our findings provide a comprehension for understanding the effect of bulky cations as antisolvents on fabricating highly efficient Pb-Sn alloyed perovskite solar cells.

SWGO: a wide-field of view gamma-ray observatory in the southern hemisphere

Abstract The recent LHAASO and HAWC results opened the way to the search of gamma ray sources emitting at energies above 100 TeV. Both detectors are in the northern hemisphere; the need for such an observatory in the southern hemisphere is therefore clear. The goal of the SWGO collaboration is the construction of a wide field of view, high duty cycle observatory to explore the Southern hemisphere sky searching for gamma ray sources at energies above 100 GeV. Such an array will detect extensive air showers particles and must be able to select the photon originated showers from the background of the hadronic ones. The experiment must be located in a site at latitude between 10° and 30° degrees south and at an altitude above 4400 m a.s.l. The baseline detection technique chosen by the collaboration is Water Cherenkov Detectors. The array will have a central region with high fill factor (>60%) and a large (about 1 km2) outer region with a much lower fill factor (around 4–5%).

Fully solution-processed n-i-p type perovskite solar cells with efficiency over 19% enabled by a hydrophobic PEDOT:F interlayer and silver nanowire top electrode

Solution-processed top electrode is the key technology for the realization of fully solution-processed perovskite solar cells (PSCs). In this paper, we reported the preparation of fully-solution processed n-i-p type PSCs with spray-coated silver nanowires (AgNWs) top electrode. Experiment results demonstrated that low power conversion efficiency (PCE) of 16.00% with a low fill factor of 67.41% was obtained for the reference cell, when the AgNWs is directly coated on the 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD) layer. This result indicates a charge extraction barrier at the Spiro-OMeTAD/AgNWs interface, which could be attributed to the poor compatibility between Spiro-OMeTAD and AgNWs layers. By inserting a thin layer of poly(3,4-ethylenedioxythiophene):perfluorinated sulfonic acid ionomers (PEDOT:F), a modified PEDOT with lower surface energy, the interface connection between Spiro-OMeTAD/PEDOT:F and AgNWs was improved, leading to an enhanced PCE of up to 19.11%. In addition, the PEDOT:F-based cells retained 64% of the initial PCE after operating at the maximum power point for 1800 h, whereas the reference cells retained only 30% of the initial PCE. The current work proved that PEDOT:F/AgNWs could be an excellent option for fully-solution processed n-i-p type PSCs.

Unveiling the mechanism of attaining high fill factor in silicon solar cells

AbstractA world record conversion efficiency of 26.81% has been achieved recently by LONGi team on a solar cell with industry‐grade silicon wafer (274 cm2, M6 size). An unparalleled high fill factor (FF) of up to 86.59% has also been certified in a separated device. The theoretical FF limit has been predicted to be 89.26%, while the practical FF is far below this limit for a prolonged interval due to the constraints of recombination (i.e., SRH recombination) and series resistance. The ideality factor (m) in the equivalent circuit of silicon solar cells is consistently ranging from 1 to 2 and rarely falls below 1, resulting in a relatively lower FF than 85%. Here, this work complements a systematic simulation study to demonstrate how to approach the FF limit in design of silicon solar cells. Firstly, a diode component with an ideality factor equal to 2/3 corresponding to Auger recombination is incorporated in the equivalent circuit for LONGi ultra‐high FF solar cell; Secondly, an advanced equivalent circuit is put forward for comprehensive analysis of bulk recombination and surface recombination on the performance, in which specific ideality factors are directly correlated with various recombination mechanisms exhibiting explicit reverse saturation current density (J0). Finally, we evaluate precisely the route for approaching theoretical FF in practical solar cell fabrication based on electrical design parameters using the developed model.

Optimized Cu-doping in ZnO electro-spun nanofibers for enhanced photovoltaic performance in perovskite solar cells and photocatalytic dye degradation.

Perovskite solar cells (PSCs) compete with conventional solar cells regarding their low-temperature processing and suitable power conversion efficiency. In PSCs, the electron transport layer (ETL) plays a vital role in charge extraction and avoiding recombination; however, poor charge transport of ETL leads to high internal resistance and associated low fill factors. To successfully resolve this challenge, copper-doped zinc oxide nanofibers as an electron transport layer are prepared with various doping levels of 1, 2, and 3 wt% using the electrospinning sol-gel method. The 3 wt% doping of Cu revealed the optimum performance as an ETL, as it offers an electrically efficient transporting structure. SEM images revealed a randomly oriented distribution of nanofibers with different sizes having mesoporous uniformity. Optical properties of doped nanofibers examined using UV-visible analysis showed an extended light absorption due to heteroatom-doping. Adding Cu into the ZnO leads to enhanced charge mobility across the electron transport material. According to Hall measurements, dopant concentration favors the conductivity and other features essentially required for charge extraction and transport. The solar cell efficiency of ZnO doped with 0%, 1%, 2%, and 3% Cu is 4.94%, 5.97%, 6.89%, and 9.79%, respectively. The antibacterial and photocatalytic activities of the prepared doped and undoped ZnO are also investigated. The better light absorption of Cu-ZnO showed a pronounced improvement in the photocatalytic activity of textile electrodes loaded with doped ZnO. The dye degradation rate reaches 95% in 180 min under visible light. In addition, these textile electrodes showed strong antibacterial activity due to the production of reactive oxygen species under light absorption.

Structure optimization of large-solid-core photonic crystal fibers based on Ge\(_{20}\)Sb\(_{5}\)Se\(_{75}\) for optical applications

This paper presents a new design of Ge20Sb5Se75 large-solid-core photonic crystal fiber (PCF) with a 1st-ring-removed square lattice. Using the full vector finite element method for anisotropic perfectly matched layers, we numerically examine the dispersion characteristics of the PCF in the wavelength range spanning from 1.5 µm to 6.0 µm. The results reveal that photonic crystal fibers exhibit a variety of dispersion properties, including all-normal and anomalous dispersion, featuring one or two zero dispersion wavelengths (ZDWs). We propose two designs with optimal dispersion characteristics based on our numerical simulations. These designs have small lattice constants (Ʌ = 1.0 µm; Ʌ = 1.5 µm) and low fill factors (d/Ʌ = 0.3; d/Ʌ = 0.35). Furthermore, these selected fibers offer high nonlinearity and low confinement loss, making them excellent candidates for a wide range of optical applications.