Low-energy Electron Diffraction Research Articles

Synthesis and characterisation of Cu2Ge, a new two-dimensional Dirac nodal line semimetal

Dirac nodal line (DNL) semimetals are a novel class of topological materials in which the valence and conduction bands touch along lines in the reciprocal space, with linear dispersion. These materials attract a growing attention, but the experimental realizations for two-dimensional systems are sparse. This article reports the first experimental realization of a two-dimensional hexagonal monolayer Cu2Ge, grown by evaporation of Ge on a Cu(111) substrate. Through a combination of low-energy electron diffraction XPS and ARPES measurements, it is shown that the surface presents all characteristics expected from calculations for a free-standing Cu2Ge monolayer. More specifically, the preservation of the two concentric nodal lines around the Γ point indicates weak interactions between the Cu2Ge surface and its Cu(111) substrate, making it an ideal system for the study of DNL materials.

In situ low-energy electron microscopy of chemical waves on a composite V-oxide/Rh(110) surface.

Chemical wave patterns and V-oxide redistribution in catalytic methanol oxidation on a VOx/Rh(110) surface have been investigated in the 10-4 mbar range with low-energy electron microscopy (LEEM) and micro spot low-energy electron diffraction (micro-LEED) as in situ methods. V coverages of θV = 0.2 and 0.4 MLE (monolayer equivalents) were studied. Pulses display a c(2⨯2) pattern in the reduced part and (1⨯2) and c(2⨯8) structures in the oxidized part of the surface. At θV = 0.4 MLE (1⨯2) / (1⨯4) patterns with streaks along the [001] direction at the 1/8 positions are present on the oxidized part of the surface. This phase can be assigned to V-oxide. Annealing the surface to 990 K under reaction conditions results in a macroscopic hole pattern in which holes of low VOx coverage are surrounded by a V-oxide layer. Chemical waves propagate inside the holes as well as on the VOx covered parts of the surface.

Epitaxial Fe/Rh bilayers for efficient spin-to-charge conversion

To address the spin pumping in the conventional ferromagnetic/“normal” metal systems, we fabricated 6 nm Fe/1–15 nm Rh epitaxial bilayers and determined the g-factor, magnetic anisotropy, and magnetization damping by combining both 0–40 GHz CPW-based frequency-dependent and cavity-based 9.56 GHz in-plane angular-dependent ferromagnetic resonance measurements at room temperature. Auger electron spectroscopy and low-energy electron diffraction show that Rh grows epitaxially on Fe. The epitaxial bilayers exhibit a high spin mixing conductance gmix↑↓=(2.9±0.2)×1019 m−2 and a spin diffusion length in Rhodium λsd=9.0±1.3 nm. This makes Rh comparable to Pt and Pd in terms of spin pumping and spin transport efficiency at room temperature.

Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatment

In this work, we investigate the silicon nitridation process using a N2 plasma Glow Discharge Source (GDS) in an ultra-high vacuum chamber. In situ Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements were performed to determine various chemical environments of the surface species. The main goals of this study are determination of the film chemical composition, to estimate its thickness and identify various phenomena taking place during the nitridation process under different experimental conditions. To achieve these objectives, we developed an ARXPS intensity model for an ultrathin SiNx overlayer. Based on the ARXPS results, which indicate that the silicon nitride film is not homogenous, we adopted a bi-layer model composed of two SixNyOz layers with varying thickness and chemical composition. The model is built from analysis of photoelectron intensities, considering a comparison between experimental and theoretical data. This bi-layer model revealed that the silicon nitride layer consists of a surface layer composed of approximately equal amounts of silicon and nitrogen (50% each), and an interfacial layer containing varying amounts of oxygen depending on experimental parameters. The presence of oxygen is due to residual air contamination in the vacuum chamber and/or to Si native oxide. The estimated thickness of silicon nitride film is less than 9 nm, depending on the nitridation time and temperature.The model developed in this work enabled us to study the effects of initial surface state (as received or chemically cleaned), Si substrate crystallographic orientation (such as (100) and (111)), and the nitridation temperature (room temperature and 500°C). The diffusing species (N+, N2+, O+), which play a crucial role during nitridation, were found to be influenced by temperature, treatment time, and substrate orientation. The diffusion phenomenon competed with other processes such as NO desorption, leading to a significant impact on formation of the SiNx film. Furthermore, we compared the thickness obtained from the ARXPS model using cross-sectional High-Resolution Transmission Electron Microscopy (HR-TEM) images. Additional Low-Energy Electron Diffraction (LEED) measurements indicated that the SiNx film was amorphous.

Tin Halide Perovskite Epitaxial Films on Gold Surfaces: Atomic Structure and Stability

AbstractTin‐based halide perovskite solar cells can be efficient and environmentally friendly substitutions to lead‐based halide perovskite solar cells, but they have a drawback due to oxidation from Sn2+ to Sn4+. Using vacuum deposition, epitaxially aligned CsSnBr3 ultrathin films are prepared on Au(111) and Au(100) and characterized with scanning tunneling microscopy (STM), low‐energy electron diffraction (LEED), and X‐ray photoelectron spectroscopy (XPS). By co‐evaporation of the precursor molecules CsBr and SnBr2, few monolayers of perovskite are obtained. On Au(111), CsSnBr3 grows in three differently oriented domains due to the hexagonal symmetry of the substrate. On Au(100), which has square symmetry, identical to CsSnBr3, but with about half the lattice constant of the perovskite, a (2×2) superstructure is observed. The perovskite is terminated with the (001) facet showing a square surface structure in agreement with density functional theory (DFT) calculations. Chemical analysis is performed in ultra‐high vacuum (UHV) conditions and no indication of a tin oxidation state higher than Sn2+ is found in the films. However, after exposure to air, rapid and severe changes in the films are observed, highlighting the importance of preparing tin perovskites in a controlled environment to maintain their stability and avoid oxidation‐related issues.

Tellurization of Pd(111) revisited: Formation of a TePd[formula omitted] surface alloy but no PdTe[formula omitted] monolayer

In a recent publication [2D Materials, 8, 045033 (2021)], it was reported that the growth of a monolayer PdTe2 in ultra-high vacuum could be achieved by deposition of tellurium on a palladium (111) crystal surface and subsequent thermal annealing. By means of low-energy electron diffraction intensity (LEED-IV) structural analysis, we show that the obtained 3×3R30° superstructure is in fact a TePd2 surface alloy. Attempts to produce a PdTe2 layer in ultra-high vacuum by increasing the Te content on the surface were not successful.

Electron screening length identifying circular dichroism of photoemission

Circular dichroism angle-resolved photoemission spectroscopy (CD-ARPES) receives much attention due to a resolving power of topological and quantum geometrical nature of two-dimensional systems. We propose the Lippmann-Schwinger photoelectron final state, a scattering solution of the lattice model comprising screened short-range potentials at periodically arranged atomic sites, which characterizes the time-reversed low energy electron diffraction (LEED) state well enough to describe the final state effect entailed in CD-ARPES. We find that, through the final state effect, the electron screening length identifies CD-ARPES not only in the qualitative dichroic polarity but also in the quantitative dichroic strength in various graphene systems like the monolayer graphene, the AA-stacking bilayer graphene, and the twisted bilayer graphene especially in a unified fashion. This finding reveals an interplay between electron screening and circular dichroism and enables to extend the spectroscopic expertise of CD-ARPES to a direct probe of the electron screening.

Crystallographic faceting of bulk tungsten surfaces observed during in situ heating in an environmental scanning electron microscope

The surface faceting of metals has been studied for several decades, typically using experimental methods such as low-energy electron diffraction. In the current paper, surface faceting of tungsten pellets was studied during in situ heating inside an environmental scanning electron microscope (ESEM), which allowed for direct, high-fidelity observation of morphological changes in response to high-temperature annealing under a moderate vacuum (0.8 Torr). Additionally, a second set of tungsten samples was annealed in an ultrahigh vacuum chamber (10−8 Torr), albeit without direct observation via ESEM. This study revealed that oxygen plays a crucial role in tungsten surface faceting and in a morphological transition to vertex rounding. Furthermore, this paper discusses relevant techniques for identifying the crystallographic indices of surface facets. It is demonstrated that a combination of electron backscatter diffraction, tilted-sample imaging from multiple angles, and serial sectioning in a focused ion beam system can be effectively deployed to determine the geometry of faceting, which in turn can be verified with the aid of software for generating Wulff shapes. The influence of processing environment on tungsten surface faceting enables the possibility of designing and controlling the morphology and crystallographic facets of tungsten surfaces.

Si(111) islands on β-phase Si(111)√3 × √3R30°-Bi

β-phase √3 × √3R30°-bismuth (Bi) on silicon (Si)(111)7 × 7 surface has been exploited as a template for growing Si films. Two-dimensional Si islands with √3 × √3 reconstruction, parallel to that of Si(111)√3 × √3R30°-Bi, have been resolved by means of scanning tunneling microscopy, grazing-incidence X-ray diffraction (XRD) and low electron energy diffraction. Auger electron spectroscopy and scanning tunneling spectroscopy gave interesting electronic features on two-dimensional Si islands, with the evidence of a reduced band gap to ~0.55 eV, related to the presence of the underneath Bi layer, and atomic structural properties typical of Si(111). These experimental findings fully confirm the recently reported calculation based on the first-principles density functional theory, on the prediction of Si(111) growth on top of β-phase √3 × √3R30°-Bi/Si(111)7 × 7 reconstruction, shedding new light on silicon structures.

An approach to surface electron density-sensing property correlation in non-stoichiometric boron carbide

The key to most surface phenomena lies in the surface electron density. Particularly, it is the electron density distribution over the surface that primarily controls the overall interaction of the material with the external environment, say in processes like heterogeneous catalysis. Hence, a precise understanding of surface electron density is essential to understand and design improved surface active materials for catalysis and sensing. Surface structure has been determined primarily using surface sensitive techniques like high-energy surface x-ray diffraction (XRD), the crystal truncation rod scattering method, low-energy electron diffraction, scanning transmission electron microscopy, and grazing incidence small angle x-ray scattering. In this work, using aspherical electron density models of crystal structures in different molecular and extended solids, we show a convenient and complementary way of determining high-resolution experimental surface electron density distribution from conventional bulk x-ray diffraction data. The usefulness of our method has been validated by the surface functionality of boron carbide. While certain surfaces in boron carbide show the presence of substantial electron deficient centers, they are absent in others. Based on that, a new surface property of boron carbide has been inferred and has also been validated by chemiresistive gas sensing experiments.

Robust Dipolar Layers between Organic Semiconductors and Silver for Energy-Level Alignment.

The interface between a metal electrode and an organic semiconductor (OS) layer has a defining role in the properties of the resulting device. To obtain the desired performance, interlayers are introduced to modify the adhesion and growth of OS and enhance the efficiency of charge transport through the interface. However, the employed interlayers face common challenges, including a lack of electric dipoles to tune the mutual position of energy levels, being too thick for efficient electronic transport, or being prone to intermixing with subsequently deposited OS layers. Here, we show that monolayers of 1,3,5-tris(4-carboxyphenyl)benzene (BTB) with fully deprotonated carboxyl groups on silver substrates form a compact layer resistant to intermixing while capable of mediating energy-level alignment and showing a large insensitivity to substrate termination. Employing a combination of surface-sensitive techniques, i.e., low-energy electron microscopy and diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy, we have comprehensively characterized the compact layer and proven its robustness against mixing with the subsequently deposited organic semiconductor layer. Density functional theory calculations show that the robustness arises from a strong interaction of carboxylate groups with the Ag surface, and thus, the BTB in the first layer is energetically favored. Synchrotron radiation photoelectron spectroscopy shows that this layer displays considerable electrical dipoles that can be utilized for work function engineering and electronic alignment of molecular frontier orbitals with respect to the substrate Fermi level. Our work thus provides a widely applicable molecular interlayer and general insights necessary for engineering of charge injection layers for efficient organic electronics.

Tin oxide thin films on Ag(111): Thickness and temperature dependent study of surface structure and electronic properties

Growth and structure of tin oxide films on Ag(111) from submonolayer to 10 monolayer equivalent thickness have been studied using low energy electron diffraction (LEED), x-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy techniques for room temperature (RT) and high temperature (HT) (573 K). For RT growth, most of the tin is oxidised to form tin oxide (SnOx) as confirmed by XPS where no metallic component is noticed. However, the grown films are not epitaxial or ordered which can be confirmed by no spots in LEED for higher coverage. Metallic Sn along with two oxidation states of Sn are noticed for HT growth, with the surface mainly composed of SnO2. LEED pattern shows the presence of c(2 × 2) and (3 × 1) along with two different hexagonal multidomain type patterns. The electronic structure for lower coverage resembled the Sn/Ag(111) alloy structures for lower coverage. For higher coverages appearance of three bands below 2 eV binding energy was noticed.

Electronic structure of superconducting VN(111) films

Vanadium nitride (VN) is a transition-metal nitride with remarkable properties that have prompted extensive experimental and theoretical investigations in recent years. However, there is a current paucity of experimental research investigating the temperature-dependent electronic structure of single-crystalline VN. In this study, high-quality VN(111) films were successfully synthesized on α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document}-Al2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_2$$\\end{document}O3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document}(0001) substrates using magnetron sputtering. The crystal and electronic structures of the VN films were characterized by a combination of high-resolution X-ray diffraction, low-energy electron diffraction, resonant soft X-ray absorption spectroscopy, and ultraviolet photoelectron spectroscopy. The electrical transport measurements indicate that the superconducting critical temperature of the VN films is around 8.1 K. Intriguingly, the temperature-dependent photoelectron spectroscopy measurements demonstrate a weak temperature dependence in the electronic structure of the VN films, which is significant for understanding the ground state of VN compounds.

Laser temperature programmed desorption: A flexible technique to study ion-surface interaction.

Understanding the physical-chemical processes ruling the interaction of particles (atoms, molecules, and ions) with surfaces is fundamental in several research fields, such as heterogeneous catalysis, astrochemistry, and nuclear fusion. In particular, the interaction of hydrogen isotopes with plasma facing materials represents a high-priority research task in the fusion community. Such studies are essential to ensure the successful operation of experimental fusion reactors, such as the tokamak ITER. In this work, we present a surface science apparatus developed to study ion-surface interaction in fusion relevant systems. It combines laser-based techniques with contaminant-free ion/molecular beams, mass spectrometry, and surface science tools such as low-energy electron diffraction and Auger electron spectroscopy. It allows to cover a wide range of sample temperatures, from 130 to 2300K, by changing the heating rate of samples from 0.1 to 135 K/s and maintaining the linearity of the heating ramps, a powerful feature to gain insight on adsorption, absorption, and desorption mechanisms. Experimental calibration and performance are presented in detail. Moreover, to provide a factual overview of the experimental capabilities, we focus on two different applications: the protocol used to clean a W(110) single crystal sample and the development of laser temperature programmed desorption to study helium retention in tungsten.

High bunch charge low-energy electron streak diffraction

For time-resolved diffraction studies of irreversible structural dynamics upon photoexcitation, there are constraints on the number of perturbation cycles due to thermal effects and accumulated strain, which impact the degree of crystal order and spatial resolution. This problem is exasperated for surface studies that are more prone to disordering and defect formation. Ultrafast electron diffraction studies of these systems, with the conventional stroboscopic pump–probe protocol, require repetitive measurements on well-prepared diffraction samples to acquire and average signals above background in the dynamic range of interest from few tens to hundreds of picoseconds. Here, we present ultrafast streaked low-energy electron diffraction (LEED) that demands, in principle, only a single excitation per nominal data acquisition timeframe. By exploiting the space–time correlation characteristics of the streaking method and high-charge 2 keV electron bunches in the transmission geometry, we demonstrate about one order of magnitude reduction in the accumulated number of the excitation cycles and total electron dose, and 48% decrease in the root mean square error of the model fit residual compared to the conventional time-scanning measurement. We believe that our results demonstrate a viable alternative method with higher sensitivity to that of nanotip-based ultrafast LEED studies relying on a few electrons per a single excitation, to access to all classes of structural dynamics to provide an atomic level view of surface processes.

Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111)

Twisted bilayer graphene (TBG) has been extensively studied because of its novel physical properties and potential application in electronic devices. Here we report the synthesis and characterization of 30° TBG naturally grown on Cu0.75Ni0.25 (111) film and investigate the electronic structure by angle-resolved photoemission spectroscopy. Compared with other substrates, our TBG with a wafer scale is acquired with a shorter growth time. The Fermi velocity and energy gap of Dirac cones of TBG are comparable with those of a monolayer on Cu0.85Ni0.15 (111). The signature of moiré lattices has not been observed in either the low-energy electron diffraction patterns or the Fermi surface map within experimental resolution, possibly due to different Cu and Ni contents in the substrates enhancing the different couplings between the substrate and the first/second layers and hindering the formation of a quasiperiodic structure.

Structural, chemical, and magnetic investigation of a graphene/cobalt/platinum multilayer system on silicon carbide

We investigate the magnetic interlayer coupling and domain structure of ultra-thin ferromagnetic (FM) cobalt (Co) layers embedded between a graphene (G) layer and a platinum (Pt) layer on a silicon carbide (SiC) substrate (G/Co/Pt on SiC). Experimentally, a combination of x-ray photoemission electron microscopy with x-ray magnetic circular dichroism has been carried out at the Co L-edge. Furthermore, structural and chemical properties of the system have been investigated using low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS). In situ LEED patterns revealed the crystalline structure of each layer within the system. Moreover, XPS confirmed the presence of quasi-freestanding graphene, the absence of cobalt silicide, and the appearance of two silicon carbide surface components due to Pt intercalation. Thus, the Pt-layer effectively functions as a diffusion barrier. The magnetic structure of the system was unaffected by the substrate’s step structure. Furthermore, numerous vortices and anti-vortices were found in all samples, distributed all over the surfaces, indicating Dzyaloshinskii–Moriya interaction. Only regions with a locally increased Co-layer thickness showed no vortices. Moreover, unlike in similar systems, the magnetization was predominantly in-plane, so no perpendicular magnetic anisotropy was found.

Growth of MnxAu1−x Films on Cu(001) and Ag(001) Single‐Crystal Substrates

The growth, morphology, and structure of films on Cu(001) and Ag(001) are studied by means of low‐energy electron diffraction (LEED), medium‐energy electron diffraction, Auger electron spectroscopy, and scanning tunnelling microscopy. Different concentrations x from about 0.5 to 1 and thicknesses from 0.2 to 12.9 ML of are examined. For several values of x, exhibits a c(2 2) superstructure pattern on Cu(001) when the total thickness is around or above 0.5 ML. Above 1 ML, LEED patterns of can be only observed on Ag(001), but not on Cu(001). LEED‐I(V) is employed to deduce the vertical interlayer distance for as‐grown and post‐annealed films on Ag(001). Above 500 K, Ag from the substrate segregates into the films.

Quasi-freestanding AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on calcium-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface.

Synthesis of Metalloborophene Nanoribbons on Cu(110)

AbstractMetalloborophene, characterized by the presence of metal‐centered boron wheels denoted as M©Bn, has garnered considerable attention in recent years due to its versatile properties and potential applications in fields such as electronics, spintronics, and catalysis. However, the experimental verification of metalloborophene is challenging, mainly due to the unconventional 2D boron networks. In this study, scanning tunneling microscopy, X‐ray photoelectron spectroscopy, low energy electron diffraction, and first‐principles calculations are employed to unveil Cu©B8 metalloborophene nanoribbons formed via spontaneous alloying after the deposition of boron on a heated Cu(110) substrate under ultrahigh vacuum condition. The thermodynamically preferred precursor, the anchoring of boron network to metal atoms, and anisotropic lattice mismatch are identified as pivotal factors in the formation of these metalloborophene nanoribbons. This discovery expands the repertoire of 2D materials and offers a potential pathway for the synthesis of other metalloborophenes.