Lorentzian Linewidth Research Articles

Absorber-Free Mode-Locking of a Hybrid Integrated Diode Laser at Sub-GHz Repetition Rate

We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates, using a hybrid integrated extended cavity diode laser operating near 1550 nm. The laser is based on InP as a gain medium and a Si3N4 waveguide feedback circuit. Absorber-free Fourier domain mode-locking with ≈15 comb lines at around 0.2 mW total power is achieved with repetition rates around 500 MHz, using three highly frequency-selective micro-ring resonators that extend the on-chip cavity length to 0.6 m. To stabilize the repetition rate, hybrid mode-locking is demonstrated by weak RF modulation of the diode current. The RF injection reduces the Lorentzian linewidth component from 8.9 kHz to a detection-limited value of around 300 mHz. To measure the locking range of the repetition rate, the injected RF frequency is tuned with regard to the passive mode-locking frequency and the injected RF power is varied. The locking range increases approximately as a square-root function of the injected RF power. At 1 mW injection, a wide locking range of about 80 MHz is obtained. We also observe the laser maintaining stable mode-locking when the DC diode pump current is increased from 40 mA to 190 mA, provided that the cavity length is maintained constant with thermo-refractive tuning.

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked quantum dot (QD) material and low–loss laterally coupled gratings, we here demonstrate a high output power, low noise, and insensitivity to light feedback 1.3 µm InAs/GaAs QD distributed feedback (DFB) laser grown on Si(001) substrates. For a QD DFB laser of a 3 × 1500 µm2 cavity, it exhibits a high single-mode output light power of up to 25 mW at 20 °C and 1.8 mW at 70 °C, respectively and maintains a stable single–mode operation in the entirely measured temperature range with a maximum side mode suppression ratio (SMSR) of 56.5 dB. Furthermore, the laser has an average relative intensity noise value low to –155.9 dB/Hz and a Lorentzian linewidth narrow to 243 kHz. In addition, the laser shows an insensitivity to optical feedback with a feedback level of –24.9 dB. Lastly, a 7-channel QD DFB laser array emitting at wavelengths from 1274.5 nm to 1290.0 nm are also exhibited with all SMSRs of higher than 45 dB. The results achieved here enable a practical single-frequency Si-based light source for the development of high-performance silicon photonic chips.

Ultra-low frequency noise external cavity diode laser systems for quantum applications

We present two distinct ultra-low frequency noise lasers at 729 nm with a fast frequency noise of 30 Hz2/Hz, corresponding to a Lorentzian linewidth of 0.1 kHz. The characteristics of both lasers, which are based on different types of laser diodes, are investigated using experimental and theoretical analysis with a focus on identifying the advantages and disadvantages of each type of system. Specifically, we study the differences and similarities in mode behavior while tuning frequency noise and linewidth reduction. Furthermore, we demonstrate the locking capability of these systems on medium-finesse cavities. The results provide insights into the unique operational characteristics of these ultra-low noise lasers and their potential applications in quantum technology that require high levels of control fidelity.

Turnkey locking of quantum-dot lasers directly grown on Si

Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the chaos-free nature of the quantum-dot laser enables a 16 Hz Lorentzian linewidth under external-cavity locking using a low-quality-factor external cavity, and improves the frequency noise by an additional order of magnitude compared with conventional quantum-well lasers.

Narrow linewidth laser based on a sidewall grating active distributed Bragg reflector.

We demonstrated a narrow linewidth semiconductor laser based on a deep-etched sidewall grating active distributed Bragg reflector (SG-ADBR). The coupling coefficients and reflectance were numerically simulated for deep-etched fifth-order SG-ADBR, and a reflectance of 0.86 with a bandwidth of 1.04 nm was obtained by the finite element method for a 500-period SG-ADBR. Then the fifth-order SG-ADBR lasers were fabricated using projection i-line lithography processes. Single-mode lasing at 1537.9 nm was obtained with a high side-mode suppression ratio (SMSR) of 65 dB, and a continuous tuning range of 10.3 nm was verified with SMSRs greater than 53 dB. Furthermore, the frequency noise power spectral density was characterized, from which a Lorentzian linewidth of 288 kHz was obtained.

Study on Linewidth and Phase Noise Characteristics of a Narrow Linewidth External Cavity Diode Laser.

In the field of inter-satellite laser communication, achieving high-quality communication and compensating for the Doppler frequency shift caused by relative motion necessitate lasers with narrow linewidths, low phase noise, and the ability to achieve mode-hop-free tuning within a specific range. To this end, this paper investigates a novel external cavity diode laser (ECDL) with a frequency-selective F-P etalon structure, leveraging the external cavity F-P etalon structure in conjunction with an auxiliary filter to achieve single longitudinal mode selection. The laser undergoes linewidth testing using a delayed self-heterodyne beating method, followed by the testing of its phase noise and frequency noise characteristics using a noise analyzer, yielding beat spectra and noise power spectral density profiles. Furthermore, the paper introduces an innovative bidirectional temperature-scanning laser method to achieve optimal laser-operating point selection and mode-hop-free tuning. The experimental results showcase that the single longitudinal mode spectral side-mode suppression ratio (SMSR) is around 70 dB, and the output power exceeds 10 mW. Enhancing the precision of the F-P etalon leads to a more pronounced suppression of low-frequency phase noise, reducing the Lorentzian linewidth from the initial 10 kHz level to a remarkable 5 kHz level. The bidirectional temperature-scanning laser method not only allows for the selection of the optimal operating point but also enables mode-hop-free tuning within 160 pm.

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings.

A single-mode InGaAsP/InP buried heterostructure (BH) laser based on high-order slotted surface gratings has been fabricated. The introduction of surface slotted grating can simplify the fabrication process of single-mode BH lasers notably. The laser shows a good single-mode emission performance, with larger than 30 dB side-mode suppression ratio (SMSR) when the current is between 200 and 400 mA. Calculations show that the gain coupling mechanism plays a key role for the slot grating to select the emission wavelength. The linewidth of the laser is measured. The fitted Gaussian and Lorentzian linewidths are 1500 and 550 kHz, respectively.

Photoluminescence modal splitting via strong coupling in hybrid Au/WS2/GaP nanoparticle-on-mirror cavities.

By integrating dielectric and metallic components, hybrid nanophotonic devices present promising opportunities for manipulating nanoscale light-matter interactions. Here, we investigate hybrid nanoparticle-on-mirror optical cavities, where semiconductor WS2 monolayers are positioned between gallium phosphide (GaP) nanoantennas and a gold mirror, thereby establishing extreme confinement of optical fields. Prior to integration of the mirror, we observe an intermediate coupling regime from GaP nanoantennas covered with WS2 monolayers. Upon introduction of the mirror, enhanced interactions lead to modal splitting in the exciton photoluminescence spectra, spatially localized within the dielectric-metallic gap. Using a coupled harmonic oscillator model, we extract an average Rabi splitting energy of 22.6 meV at room temperature, at the onset of the strong coupling regime. Moreover, the characteristics of polaritonic emission are revealed by the increasing Lorentzian linewidth and energy blueshift with increasing excitation power. Our findings highlight hybrid nanophotonic structures as novel platforms for controlling light-matter coupling with atomically thin materials.

Laser coherence linewidth measurement based on deterioration of coherent envelope

The laser linewidth represents a pivotal parameter for assessing laser energy concentration and coherence, thereby exerting a significant influence on aspects such as detection range, measurement resolution, and signal-to-noise ratio in the domain of laser precision measurement technology. Historically, laser linewidth measurement has predominantly relied upon evaluating energy distribution width within the frequency domain. However, this approach does not provide a direct assessment of laser coherence. In the present study, we introduce the novel concept of “coherence linewidth” as a means to directly quantify laser time–frequency coherence. This concept is based on the coherent envelope generated through delayed self-heterodyne detection. In our proof-of-concept experiment, we derive the coherence coefficient via Fourier transform of the partial coherent envelope, subsequently enabling the measurement of the coherence linewidth of the laser. Notably, the measured coherence linewidth falls between the traditional integrated linewidth and the intrinsic Lorentzian linewidth. This observation suggests that the coherence linewidth is less susceptible to the influence of low-frequency 1/f noise. The concept of coherence linewidth presented herein may serve as a promising method for the direct characterization of coherence in narrow linewidth lasers.

Linear polarization and narrow-linewidth external-cavity semiconductor laser based on birefringent Bragg grating optical feedback

We demonstrate an external-cavity semiconductor laser (ECSL) with linear polarization and a narrow linewidth. A birefringent Bragg grating prepared by a femtosecond laser point-by-point technique in a polarization-maintaining fiber (PMF) is used to provide external-cavity feedback, and its polarization-dependent characteristics enable selection of the main polarization mode and linewidth narrowing of the ridge waveguide emission gain chip (GC). This compact and robust ECSL achieves an output power of > 60 mW and a polarization extinction ratio (PER) of > 30 dB. We simulate and calculate the linewidth and injection current, while a Lorentz linewidth of 2.58 kHz is obtained based on delayed self-heterodyne beat frequency measurement. This flexible and cost-effective solution allows realization of a compact ECSL with linear polarization and a narrow linewidth.

Tunable Narrow Linewidth External Cavity Diode Laser Employing Wide Interference Filter and Diffraction Grating

We design a unique external cavity configuration and present an ultra-narrow linewidth external cavity diode laser (ECDL) employing a wide interference filter and diffraction grating. The interference filter is for suppressing the noise floor, and diffraction grating is used for the mode selection. The combination of the filter and diffraction grating can effectively use a narrow linewidth without a significant reduction in optical gain. The Lorentz linewidth reaches 13.6 kHz at a wavelength of 1555 nm. The ECDL can be tuned by rotating the diffraction grating, and a wide tunable range of 40 nm is achieved with a maximum output power of 25.6 mW at an injection current of 200 mA. In addition, the ECDL shows an excellent side mode suppression ratio (SMSR) performance with a maximum of 57 dB at 1555 nm. Additionally, the SMSR changes gently throughout the tuning range at the injection current of 200 mA.

Nano-ITLA Based on Thermo-Optically Tuned Multi-Channel Interference Widely Tunable Laser

A tunable light source with narrow linewidth, small size and low power consumption is necessary for high-speed digital coherent communication system. We have developed a monolithically integrated narrow linewidth widely tunable laser—multi-channel interference (MCI) laser, which realizes a quasi-continuous tuning range covering the C++ band. By packaging the laser chip, wavelength locker and thermoelectric cooler (TEC) into a transmitter optical subassembly (TOSA) box and designing a compact print circuit board (PCB), a nano-integrable tunable laser assembly (Nano-ITLA) based on the thermo-optically tuned MCI laser is demonstrated for the first time. The Nano-ITLA is 25.0 mm (L) × 15.6 mm (W) × 6.5 mm (H), and realizes 120 International Telecommunication Union (ITU)-grid switching over 48 nm and less than 3 W total power consumption. The side-mode suppression ratios (SMSRs) are higher than 46 dB, the fiber coupled output powers are greater than 16 dBm, and the Lorentzian linewidths are less than 150 kHz. High precision wavelength locking and temperature control system make the output frequency deviation of all channels from the ITU-grid less than ± 0.5 GHz and the wavelength drift less than ± 1 pm. The output power can be accurately controlled and stabilized at ± 0.1 dB through a closed-loop feedback. The no-light shutdown function realizes an extinction ratio higher than 40 dB during wavelength switching. The Nano-ITLA demonstrates excellent application potential in the coherent optical communications.

Spectrum Extreme Purification and Modulation of DBR Fiber Laser With Weak Distributed Feedback

Highly coherent lasers with spectral hyperpurity can further advance the fields of science and engineering. Especially, a light source with controllable frequency domain parameters can be adapted to a variety of emerging application scenarios. Herein, we report on an implementation of a novel ultra-high spectral purity distributed Bragg reflector (DBR) all-fiber laser based on weak distributed feedback, and its spectrum can be modulated in a certain extent by precisely controlling the intensity of the distributed feedback signal. Eventually, an ultra-high spectral purity laser with a spectral signal-to-noise ratio of 64 dB, a side mode suppression ratio (SMSR) of 83 dB, an output Lorentz linewidth of 115 Hz and a relative intensity noise of less than -122 dB/Hz is successfully obtained under normal conditions. Also, the frequency noise limit of the fiber laser with weak distributed feedback in the high frequency white noise flat region is 4.8 Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Hz, corresponding to a fundamental linewidth of ∼15.1 Hz. In particular, the SMSR and Lorentz linewidth of the laser can be continuously adjusted from 53 dB to 83 dB and 115 Hz to 8.2 kHz, respectively. In addition, we also investigated the effect of different pumping configurations on the performance of the DBR fiber laser. The proposed controllable mechanism of laser spectrum also provides a new perspective for extreme regulation of other laser parameters.

Characterization of Thermo-Optically Tuned Multi-Channel Interference Widely Tunable Semiconductor Laser for Quasi-Continuous Tuning

Characterization of the thermo-optically tuned multi -channel interference widely tunable semiconductor laser for quasi-continuous tuning is demonstrated for the first time. The characterization strategy is carried out by simultaneously controlling seven arm phase sections to shift the reflection peak and adjusting the common phase section to fine-tune the longitudinal mode. Output wavelengths at 50 GHz frequency spacing are characterized, and a quasi-continuous tuning range beyond 60 nm is achieved at two temperatures. In the entire tuning range: side-mode suppression ratios are higher than 40 dB; wavelength deviations are less than ± 10 pm from international telecommunication union grid; total thermal tuning powers are lower than 35 mW, and Lorentzian linewidths are less than 100 kHz. The tuning information near any output wavelength is obtained and the characterization speed is greatly improved. This strategy provides a new route for characterizing tunable lasers with multiple tuning currents.

A comparison of pulse and CW EPR [formula omitted]-relaxation measurements of an inhomogeneously broadened nitroxide spin probe undergoing Heisenberg spin exchange

Nitroxide spin probes are inhomogeneously broadened (IHB) by intramolecular hyperfine interactions with protons (deuterons) producing lines of Voigt shape. Thus, to study T2 relaxation by continuous wave (CW) EPR, the Voigt must be deconvoluted to find the Lorentzian component. For homogeneously broadened lines, T2 is obtained directly from the Lorentzian line widths ΔHppL; however, for IHB lines finding T2 from ΔHppL is more complicated. It has been known for many years that values of ΔHppL of high precision may be obtained from IHB lines; however, direct, accurate comparison of spin exchange frequencies obtained from electron spin echo decay and CW EPR data has been lacking. It is demonstrated here that despite complications in the interpretation of experiments, these two techniques yield the same spin exchange rate constant for spin probes that are the most difficult to treat.

E-band widely tunable, narrow linewidth heterogeneous laser on silicon

We demonstrate a heterogeneously integrated laser on silicon exhibiting a sub-20 kHz Lorentzian linewidth over a wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values to date for E-band integrated lasers in the literature. Wide wavelength tuning is achieved with an integrated Si ring-resonator-based Vernier mirror, which also significantly reduces the Lorentzian linewidth. Such a record performance leverages a mature heterogeneous III–V/Si platform and marks an important milestone in E-band optical fiber communications and in reaching visible wavelengths via second harmonic generation for optical atomic clock applications.

Compact sub-hertz linewidth laser enabled by self-injection lock to a sub-milliliter FP cavity

A narrow linewidth laser (NLL) of high frequency stability and small form factor is essential to enable applications in long-range sensing, quantum information, and atomic clocks. Various high performance NLLs have been demonstrated by Pound-Drever-Hall (PDH) lock or self-injection lock (SIL) of a seed laser to a vacuum-stabilized Fabry-Perot (FP) cavity of ultrahigh quality (Q) factor. However, they are often complicated lab setups due to the sophisticated stabilizing system and locking electronics. Here we report a compact NLL of 67-mL volume, realized by SIL of a diode laser to a miniature FP cavity of 7.7 × 108 Q and 0.5-mL volume, bypassing table-size vacuum as well as thermal and vibration isolation. We characterized the NLL with a self-delayed heterodyne system, where the Lorentzian linewidth reaches 60 mHz and the integrated linewidth is ∼80 Hz. The frequency noise performance exceeds that of commercial NLLs and recently reported hybrid-integrated NLL realized by SIL to high-Q on-chip ring resonators. Our work marks a major step toward a field-deployable NLL of superior performance using an ultrahigh-Q FP cavity.

Narrow linewidth electro-optically tuned multi-channel interference widely tunable semiconductor laser.

A narrow linewidth electro-optically tuned multi-channel interference (MCI) widely tunable semiconductor laser based on carrier injection is demonstrated in this paper. The MCI laser with a common phase section and a semiconductor optical amplifier (SOA) is packaged into a 16-pin butterfly box. The laser is characterized by a strategy: shifting the longitudinal mode and then aligning the reflection peak, which obtains a quasi-continuous tuning range over 48 nm. The corresponding side mode suppression ratios (SMSRs) are higher than 40 dB and frequency deviations from ITU-grid are less than ± 1 GHz. Threshold currents are less than 28 mA. Fiber coupled output powers are higher than 20 mW and power variations with fixed gain and SOA currents are less than 0.8 dB over the whole tuning range. Lorentzian linewidths are less than 320 kHz over the entire tuning range, which is one of the lowest results for monolithic widely tunable semiconductor lasers tuned by carrier injection. These results demonstrate the potential prospects of the MCI laser with carrier injection in the field of optical sensing and optical communications.

Effective linewidth compression of a single-longitudinal-mode fiber laser with randomly distributed high scattering centers in the fiber induced by femtosecond laser pulses.

Femtosecond lasers can be used to create many functional devices in silica optical fibers with high designability. In this work, a femtosecond laser-induced high scattering fiber (HSF) with randomly distributed high scattering centers is used to effectively compress the linewidth of a fiber laser for the first time. A dual-wavelength, single-longitudinal-mode (SLM) erbium-doped fiber laser (EDFL) is constructed for the demonstration, which is capable of switching among two single-wavelength operations and one dual-wavelength operation. We find that the delayed self-heterodyne beating linewidth of the laser can be reduced from >1 kHz to <150 Hz when the length of the HSF in the laser cavity increases from 0 m to 20 m. We also find that the intrinsic Lorentzian linewidth of the laser can be compressed to several Hz using the HSF. The efficiency and effectiveness of linewidth reduction are also validated for the case that the laser operates in simultaneous dual-wavelength lasing mode. In addition to the linewidth compression, the EDFL shows outstanding overall performance after the HSF is incorporated. In particular, the optical spectrum and SLM lasing state are stable over long periods of time. The relative intensity noise is as low as <-150 dB/Hz@>3 MHz, which is very close to the shot noise limit. The optical signal-to-noise ratios of >85 dB for single-wavelength operation and >83 dB for dual-wavelength operation are unprecedented over numerous SLM fiber lasers reported previously. This novel method for laser linewidth reduction is applicable across gain-medium-type fiber lasers, which enables low-cost, high-performance, ultra-narrow linewidth fiber laser sources for many applications.

Stable and Tunable PT-Symmetric Single-Longitudinal-Mode Fiber Laser Using a Nonreciprocal Sagnac Loop

A stable and tunable parity-time (PT) symmetric single-longitudinal-mode fiber laser using a nonreciprocal Sagnac loop is proposed, which is experimentally and numerically demonstrated. The nonreciprocal Sagnac loop only including a 3-dB optical coupler (OC) and a polarization controller (PC) is incorporated into a fiber ring cavity, in which nonreciprocal light transmission between the frequency-degenerate clockwise (CW) and counterclockwise (CCW) resonator modes is induced to suppress multiple-longitudinal-mode oscillation of the laser. The two light paths along the CW and CCW directions in the Sagnac loop are respectively defined as the gain and loss loop of the PT-symmetric laser, due to a controllable birefringence induced by the PC. By controlling the polarization states of the two light waves, the PT symmetry is broken when the gain coefficient is larger than the coupling coefficient, single-mode lasing is thus achieved. Experimental results show that the optical signal to noise ratio (OSNR) of the single-mode lasing at 1550 nm is 43.0 dB, proving the great superiority of PT symmetry for lasing mode selection. By tuning an optical tunable band-pass filter incorporated into the fiber cavity, the wavelength of output single-mode lasing varies from 1530 to 1560 nm, and their 3-dB Lorentzian linewidth varies within a range from 529 to 687 Hz. During a 30-min observation period, the variations of wavelength drift and OSNR of the single-mode lasing are less than 6 pm and 2.42 dB, respectively. The advantages of the proposed scheme are obvious, which include simple structure, low cost, simple operation, and good stability.