Longitudinal Spatial Hole Burning Effect Research Articles

Analysis of light – current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model

This paper presents a 2D model of a high-power semiconductor laser, which takes into account carrier transport across the layers of its heterostructure and longitudinal spatial hole burning (LSHB), an effect related to the nonuniform gain distribution along the cavity axis. We show that the use of the 2D model which takes into account carrier transport across the layers of the heterostructure allows an appreciable contribution of LSHB to saturation of light – current characteristics to be demonstrated. The LSHB effect, causing a decrease in the output optical power of semiconductor lasers, is shown to be stronger at high drive currents and low output mirror reflectivities. In the case of high drive currents, the LSHB-induced drop in power is related to the faster growth of internal optical and recombination losses because of the nonuniform current density distribution along the cavity axis, such that the highest current density can be almost twice the lowest one. LSHB is shown to increase the power stored in a Fabry – Perot cavity, which is an additional mechanism reducing the output optical power.

Research on the Asymmetric Corrugation-Pitch-Modulated HR-AR DFB Lasers With Sampled Gratings

A distributed feedback (DFB) laser for high-speed modulation with asymmetric corrugation-pitch-modulated (ACPM) grating structure and high-reflection and anti-reflection coating (HR-AR) coating is demonstrated theoretically and experimentally in this paper. The ACPM gating structure is fabricated by the reconstruction equivalent chirp (REC) technology, which is with low cost. The impact of the longitudinal spatial hole burning (LSHB) effect and the facet phase on the characteristics of the ACPM DFB laser is discussed in detail. The numerical simulation results show that the proposed ACPM DFB laser can suppress the LSHB effect significantly. Comparing with the conventional HR-AR DFB laser, the ACPM DFB laser can achieve higher output efficiency, better single-mode yield, and wider modulation bandwidth. The modulation eye diagrams of HR-AR DFB lasers with different grating structures are also presented. The experimental results show that the LSHB effect in the HR-AR DFB laser with ACPM structure is suppressed effectively. The laser with ACPM structure fabricated by the REC technique has high slope efficiency, stable single longitudinal mode operation, and wide modulation bandwidth.

Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Longitudinal spatial hole burning (LSHB) in high-power semiconductor lasers is analysed by numerically solving one-dimensional (1D) rate equations. Calculations are performed for GaAs-based lasers operating at a wavelength of 1.06 μm. It is shown that the LSHB-induced decrease in output power can be accounted for by two mechanisms: build-up of spontaneous recombination and decrease in slope efficiency, equivalent to a rise in internal optical loss. We analyse the influence of different laser chip parameters on the magnitude of the LSHB effect. In particular, it is shown that to suppress LSHB it is preferable to increase the optical confinement factor Γ. We examine the relationship between LSHB and other mechanisms capable of reducing the output power.

A horn ridge waveguide DFB laser with reduced spatial hole burning for high-speed modulation

In this paper, we propose a DFB laser with a horn ridge waveguide (HRW) to suppress the longitudinal spatial hole burning (LSHB) effect in the lasers cavity, thus to reduce the rolloff at low frequency. The simulation result shows that HRW DFB lasers could significantly suppress the LSHB effect and its modulation bandwidth is increased by 14% comparing with the conventional straight ridge waveguide (RW) DFB lasers when the normalized coupling coefficient (κL) is 3.0. The calculated eye diagrams of HRW DFB lasers under direct 25 Gbps modulation have clearer opening than that of the conventional RW DFB lasers. These superior properties are due to the suppression of the LSHB effect by the HRW structure.

A physics-based three-dimensional model for distributed feedback laser diodes

A comprehensive physics-based three-dimensional (3-D) model for distributed feedback (DFB) lasers is developed and presented. The model considers self-consistently optical confinement, carrier transport and heat transfer over the two-dimensional (2-D) cross section. It also accounts for the longitudinal spatial hole-burning effect along the laser cavity. A rigorous optical gain model is incorporated into the 3-D model. A number of novel techniques are used in implementation of the model for efficient simulation of de and ac performance. The simulator runs efficiently on a personal computer and can be incorporated as part of the computer-aided engineering tools for the design and analysis of DFB lasers.

Analysis of the second- and third-order intermodulation distortion in DFB lasers including dynamic spatial hole burning effect

Analysis of second and third order intermodulation distortion characteristics of semiconductor DFB lasers is, for the first time, performed, including dynamic longitudinal spatial hole burning (LSHB) effect. We have shown theoretically that the third order intermodulation distortion can be lower than the calculated curve without LSHB effect, which is confirmed with experiments.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Suppression of longitudinal spatial hole-burning effect in lambda /4-shifted DFB lasers by nonuniform current distribution

The mode and the output properties of an asymmetric lambda /4-shifted DFB (distributed-feedback) laser with a distributed injection current density along the cavity are investigated theoretically and experimentally. Coupled wave equations that describe the longitudinal spatial hole-burning phenomenon due to both distributions of a stimulated recombination carrier density and an injection current density are developed. The calculations show that an appropriate distribution of the injection current similar to the intensity profile can be effectively suppress the longitudinal spatial hole-burning effect from the aspect of threshold gai difference Delta alpha /sub th/. A 1.55- mu m InGaAsP/InP asymmetric lambda /4-shifted DFB laser was fabricated with three divided electrodes. Improvement of the linearity of the output characteristics, decrease of threshold current, stability of the single-mode property, and narrowing of the spectral linewidth by injection current and distribution along the cavity were observed. >

Coupled phase-shift distributed-feedback semiconductor lasers for narrow linewidth operation

Mode properties of a coupled phase-shift distributed-feedback (DFB) structure are analyzed and the feasibility of narrow-linewidth emission is shown theoretically. The structure consists of a multiple number of phase-shift DFB laser units which are arranged in tandem and coupled with each other through additional phase shift of corrugation. Optimum structure parameters were determined for two coupled laser units so that the frequency detuning is zero and the mode pattern is the flattest. The mode analysis shows that the intensity distribution is flatter and the normalized coupling constant can be larger than those for the conventional DFB laser with a single phase shift. This indicates that the cavity length can be extended with less influence from the longitudinal spatial hole burning effect. >