Longitudinal Optical Phonon Research Articles

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

AbstractPhonon occupation is temperature (T) dependent; it may participate in scattering with electronic states of topological insulators (TIs). Longitudinal optical (LO) phonons and in Bi2 − xSbxTe3 − ySey (BSTS) was resonantly excited by a photon energy (Ep) 2.33 eV due to electronic transition of unoccupied conduction band. The intensity of these modes was enhanced in Bi2Te3 film at Ep 1.87 eV, which is close to the electronic transition of unoccupied Dirac states. Fröhlich coupling strength was the main mechanism for higher intensity of and modes. At 300 K, the intensity of the mode was significantly decayed in both the BSTS and Bi2Te3 at Ep 2.33 and 1.87 eV due to the anharmonic coupling. However, at similar value of T, spectral profile of and modes was not affected because of the lower probability of decay rate of these phonons. In resonant condition, well‐resolved Raman forbidden surface modes were observed at T of 50 K. At 300 K, more asymmetric Fano profile of surface phonon was observed due to the anharmonic coupling. The study indicated that at high T, mode and anharmonic coupling may become primary cause for scattering with electronic states of the TIs. However, at low T, primarily, both the LO phonons participated in the scattering.

Antimony (Sb)-doped PbTe nanostructured alloys with improved optical and thermoelectrical characterizations for clean energy applications

The current work investigates the influence of antimony doping on the morphology, optical behavior, and thermoelectric performance of PbTe nanostructures fabricated using the hydrothermal method. Analyses employing X-ray diffraction (XRD) and Raman spectroscopy techniques asserted the existence of the cubic phase, a defining characteristic of PbTe compounds. The morphology and internal structure of the samples are examined by the scanning and high-resolution transmission electron microscopes. The photoluminescence spectra show a band gap energy around 3.0 eV which is higher than that of the bulk sample. Raman spectra show three peaks corresponding to longitudinal optical (LO) phonon mode and higher-harmonic multiphonon process of PbTe. The PL spectra exhibit a strong peak at the wavelength 401 nm which is ascribed to a recombination of excitons and/or shallowly trapped electron–hole pairs. The thermoelectric properties are studied in the temperature range of 300–500 K and confirm the domination of p-type conduction in the whole temperature range. The electrical conductivity (σ) versus temperature showed thermally activated behavior as the charge carrier mobility is activated and the average carrier kinetic energy increases with temperature. Activation energy was obtained from the plots of Ln σ as a function of 1000/T. The recorded values were found at 62, 50,73 and 34 meV for x = 0, 0.04, 0.06 and 0.08, respectively. The Seebeck coefficients (S) of the synthesized nanostructures revealed a dominance of p-type conduction due to consistently positive S values. The S-T plots exhibit an initial increase in S with temperature at lower values (T < Tₛ). However, a transition occurs at a specific temperature (Tₛ), marked by a step change in S from positive to negative values, followed by a decrease in S with further temperature rise (T > Tₛ). The highest Seebeck coefficient was observed around 196.2 μV/ K and recorded at 418 K for the sample of x=0.04 Sb content. The largest power factor was recorded at 13.6×10-5 W. m-1. K-2, obtained for pure PbTe at 438 K due to the high value of electrical conductivity.

Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration

ABSTRACTThe synthesis of two‐dimensional transition metal dichalcogenide (2D‐TMD) materials gives rise to inherent defects, specifically chalcogen vacancies, due to thermodynamic equilibrium. Techniques such as chemical vapor deposition (CVD), metal‐organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), flux growth method, and mechanical exfoliation produce large‐scale, uniform 2D TMD films, either in bulk or monolayers. However, defects on the film surface impact its quality, and it is necessary to measure defect density. The phonon confinement model indicates that the first‐order Raman band frequency shift depends on defect density. Monolayer Molybdenum disulfide (MoS2) exhibits three phonon dispersions at the Brillouin zone edge (M point): out‐of‐plane optical phonon vibration (ZO), in‐plane longitudinal optical phonon vibration (LO), and in‐plane transverse optical phonon vibration (TO). The LO and ZO modes overlap with Raman in‐plane vibration (𝐸12g) and Raman out‐of‐plane vibration (𝐴1g), respectively, causing peak broadening. In the presence of defects, the Raman 𝐸12g vibration energy decreases due to a reduced restoring force constant. The Raman 𝐴1g vibration trend is random, influenced by both restoring force constant and mass. The study introduces a quantitative defect measurement technique for CVD‐grown monolayer MoS2 using Raman 𝐸12g mode, employing sequential data processing algorithms to reveal defect density on the film surface.

Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire.

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of AlxGa1-xN films with high Al fractions (60-87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal-organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E2(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) AlxGa1-xN films possess large energy gaps Eg in the range of 5.0-5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20-300 K of Al0.87Ga0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1-2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field.

Top-down approach for the preparation of Au/ZnO nanostructures by glancing-angle ion irradiation: Morphological, structural and optical studies

We report the 100 keV glancing-angle Xe+ ions irradiation based top down approach for the preparation of ZnO and Au/ZnO hybrid nanostructures and its morphological, structural and optical properties. FESEM micrographs reveal Xe+ ion irradiation favours the nucleation and formation of highly aligned, dense nanostrips like structures. Crystalline structure of ZnO, Xe+ ions irradiated ZnO and Au/ZnO hybrid nanostructures were analysed by grazing incident X-ray diffraction and Raman scattering measurements. The elemental compositions and thickness of the grown nanostructures were estimated using Rutherford backscattering spectrometry analysis. The influence of Xe+ ion irradiation on the photoluminescence (PL) behaviour of ZnO and Au/ZnO hybrid nanostructures were studied in detail using temperature dependent PL measurements in the range of 80–298 K. Strong PL emission associated with free excitons (FX) and its longitudinal optical phonon replicas observed in ion irradiated Au/ZnO hybrid nanostructures clearly reveal the strong coupling of the localized surface plasmons in the Au nanoparticles to the FX in ZnO. Our experimental results reveal ion beam irradiation is one of the effective approaches to tailor the optical properties of ZnO and Au/ZnO hybrid nanostructures.

Analysis of the high-temperature transport property in GaN-based single and double heterostructures

GaN-based heterostructures have been proved to be excellent candidates for high-voltage, large-power, high-frequency and high-temperature application fields, thanks to their superior material properties. To further improve the carriers’ confinement, using InGaN channel layer or introducing AlGaN back barrier layer is promoted. These structures are also proved to be favorable for the robust electron mobility at high temperature. However, the reason solely rests on the longitudinal optical (LO) phonon scattering and the behind mechanism is still absent. This work compares the temperature-dependent electronic transport properties in three groups of GaN-based heterostructures, including GaN-based single heterostructure (SH) with/without AlN interlayer, GaN-based SH and double heterostructure (DH), and GaN-based DH with AlGaN or GaN channel layer. The advantageous high-temperature mobility is attributed to the enhanced LO phonon energy in heterostructures. By self-consistent calculations of the Schrödinger–Poisson equations, a close relation between the narrow electron distribution in the quantum well with the high LO phonon energy, and consequently superior mobility at high temperature is implied. The results provide a simple strategy for the optimized design of the GaN-based heterostructures outperforming at high temperature.

Effect of Nanoscale Surface Roughness and Electron-Phonon Interaction on Vibrational Modes of Cadmium Telluride Using Resonant Raman Spectroscopy.

This study investigates the combined effects of nanoscale surface roughness and electron-phonon interaction on the vibrational modes of cadmium telluride (CdTe) using resonant Raman spectroscopy. Raman spectra simulations aided in identifying the active phonon modes and their dependence on roughness. Our results reveal that increasing surface roughness leads to an asymmetric line shape in the first-order longitudinal optical (1LO) phonon mode, attributed to an increase in the electron-phonon interaction. This asymmetry broadens the entire Raman spectrum. Conversely, the overtone (second-order longitudinal optical, or 2LO. mode exhibits a symmetrical line shape that intensifies with roughness. Additionally, we identify and discuss the contributions of surface optical phonon mode and multiphonon modes to the Raman spectra, highlighting their dependence on roughness. This work offers a deeper understanding of how surface roughness and electron-phonon scattering influence the line shape of CdTe resonant Raman spectra, providing valuable insights into its vibrational properties.

Kinetics of optical phonons and DP depolarization of spins in drift transport: Hot carrier spin effect in semiconductors

&lt;p&gt;Spin-&lt;strong&gt;c&lt;/strong&gt;onserving transport of carriers is an essential requirement for the practical semiconductor-based spintronic devices. Kinetics of optical phonons and Dyakonov-Perel (DP) depolarization of spins in drift transport in semiconductor gallium arsenide (GaAs) is theoretically investigated&lt;strong&gt;. &lt;/strong&gt;We consider electrons in &lt;em&gt;n&lt;/em&gt;-type bulk GaAs subjected to a strong electric field, where the electron distribution is assumed to be drifted Maxwellian. The momentum drift of this distribution results in the enhanced drift velocity, and electrons with the corresponding energy emit optical hot phonons in the drifting process. The hot phonons are incorporated via the longitudinal polar optical phonon (POP) mechanism in the momentum relaxation. It is found that a finite phonon lifetime can reduce the momentum relaxation rate, which results in a delay in the runaway to higher fields, where the effect increases with the electron density. The electron spin is found to relax with the DP relaxation frequencies, and the DP spin lifetimes are found to decrease with increasing the drift field. However, a high field completely depolarizes the electron spin due to an increase of the DP spin precession frequency of the hot electrons in the POP scattering process. It is also found that the DP spin precession frequency decreases with decreasing electron temperature or increasing electron density in the moderate range. However, the findings resulting from this investigation demonstrate the hot carrier effect in the spin transport in semiconductors. The results are discussed in comparison with those obtained in earlier experimental and theoretical studies with different approaches.&lt;/p&gt;

Abnormal Temperature Dependence of Huang-Rhys Factor and Exciton Recombination Kinetics in CsPbBr3 Perovskite Quantum Dots.

Anomalous thermal behaviors of excitonic luminescence in CsPbBr3 perovskite quantum dots (PQDs) were observed. It is found that the main luminescence peak originated from the excitonic radiative recombination assisted by the longitudinal-optical (LO) phonon, and its integrated intensity first declines as the temperature varies from 10 to 150 K and then turns to increase at ∼160 K, reaching a maximum value at 300 K. A model considering the thermal detrapping and transfer of electrons from a trap level is developed to interpret these abnormal thermal behaviors of the luminescence from the PQDs. On the other hand, the quantum-mechanical multimode Brownian oscillator model was employed to unravel that the Huang-Rhys factor exclusively characterizing the exciton-phonon coupling in the studied CsPbBr3 PQDs decreases from 1.65 at 10 K to 1.31 at 200 K.

Generation of a coherent longitudinal optical phonon plasmon coupled mode in an n-type InSb single crystal in the absence and/or strong suppression of the photo-Dember effect confirmed with the use of terahertz time-domain spectroscopy

We explored the feasibility of generating a coherent longitudinal optical (LO) phonon–plasmon coupled mode in an n-type InSb single crystal with the condition that the photo-Dember effect is strongly suppressed and/or eliminated. We systematically performed terahertz time-domain spectroscopic measurements of the n-type InSb single crystal and undoped InSb crystal. The terahertz electromagnetic wave originating from the photo-Dember effect was extinguished in the n-type InSb single crystal, while the clear signal from the photo-Dember effect was detected in the undoped InSb single crystal. Meanwhile we detected the clear signal of the terahertz wave from the coherent LO-phonon–plasmon coupled mode in the n-type InSb single crystal, indicating that the photo-Dember effect is not dominant in the generation of the coherent LO-phonon–plasmon coupled mode although the photo-Dember effect has been attributed to the dominant generation mechanism of the coherent LO-phonon–plasmon coupled mode so far. We explain the present phenomenon, taking account of the fact that the impulsive stimulated Raman scattering process has a possibility of generating coherent LO-phonon–plasmon coupled modes in light-absorbing solids [Nakamura et al., Phys. Rev. B 99, 180301(R) (2019)].

The phonon-modulated Jahn–Teller distortion of the nitrogen vacancy center in diamond

The negatively charged nitrogen vacancy (NV) center in diamond is an optically accessible material defect with a unique combination of spin and optical properties that has attracted interest in quantum-information sciences and as a design candidate for nanoscale quantum sensors. Here, we present time-resolved nonlinear optical spectroscopy measurements, conducted with ultrabroadband laser pulses, that reveal strong modulation of the excited-state by the longitudinal optical (LO) phonon of the diamond lattice. The LO phonon and its overtones geometrically distort neighboring NV centers, driving long lived (3.5 ps) excited state relaxation of coupled NV centers after the initial excitation and ultrafast (<150 fs) decay of the Jahn–Teller distortion. These observations elevate the LO phonon to an important tuning mode of the Jahn–Teller conical intersection and help resolve previous spectroscopy experiments that noted longer-lived excited-state dynamics.

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved cathodoluminescence linescans. We show that this intensity change is an indicator of unintentional Si incorporation during growth resulting from the interaction between the impinging Ga atoms and the mask material. The gradual reduction of the cathodoluminescence intensity along the nanowire highlights the important role of the growth geometry within the synthesis reactor, with shadowing from the elongating nanowires inhibiting the reaction with the mask. This gradient in Si doping is confirmed by the quenching of the longitudinal optical phonon line measured in Raman spectra along the nanowire axis. The corresponding carrier density is derived from the frequency of the coupled phonon–plasmon mode. The spectroscopic identification of inversion domain boundaries in the majority of the nanowires is also attributed to the Si incorporation. From temperature dependent cathodoluminescence experiments, we derive the activation energy for excitons bound to these defects.

Characterization of ZnSe Thin Film Electrodeposited at Room Temperature in Aqueous Medium without Complexing Agents

This study includes a simple electrodeposition technique for the fabrication of ZnSe thin film at room temperature and in an aqueous medium without additional complexing agents. Comprehensive analysis of the optical, structural, and morphological characteristics of the ZnSe thin film electrodeposited onto an ITO substrate was conducted using UV-Vis spectrometry, X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR), and field emission–scanning electron microscopy (FE–SEM). Furthermore, the photoelectrochemical properties were evaluated through current-time (I-t) measurements and electrochemical impedance spectroscopy (EIS) under light on/off conditions. Mott-Schottky analysis was also performed to determine the conductivity type, carrier concentration, and flat band potential of the ZnSe thin film. Structural investigations revealed that the ZnSe thin film has a hexagonal structure, the longitudinal optical (LO) phonon mode, stretching and bending vibration modes of Zn-Se. The carrier type of the ZnSe thin film was identified as n- type semiconductor and photoelectrochemical measurements exhibited a photoresponse under the light illumination

Probing carrier transport of sphalerite Cadmium Chalcogenide (CdX, X=S, Se) from first-principles

Cadmium chalcogenide (CdX, X=S, Se) traps photons in the visible and near-infrared regions, and it has been widely used in optoelectronic devices such as solar cells and light-emitting diodes. The carrier concentration and intrinsic mobility are prerequisites for the optimized design of optoelectronic devices, while the underlying physics that determines the carrier mobility of sphalerite CdX remains elusive. Herein, we explore the temperature-dependent carrier transport properties and scattering mechanisms of sphalerite CdX from first-principles. The calculation results indicate that the isotropic electron mobility for CdS and CdSe are 180.2 cm2/Vs and 656.8 cm2/Vs at room temperature, respectively. An in-depth analysis reveals that polar optical phonon (POP) scattering is the main scattering mechanism limiting the mobility of sphalerite CdX, and electrons are mainly affected by long-range longitudinal optical phonon scattering. The lower electron mobility of CdS compared to CdSe is attributed to the larger Fröhlich coupling constant, -larger Pauling ionicity, and stronger electron-phonon interactions. As the temperature rises, the electron mobility of CdX consistently decreases due to the enhancement of POP scattering and lattice vibrations. The electron mobility of CdX at high doping concentrations decreases dramatically, attributing to the enhancement of ionized impurity scattering i.e. collisional scattering of electrons and ionized impurity ions. This work provides a systematic study of the electron transport properties of sphalerite cadmium chalcogenide from first-principles, which provides a theoretical guideline for the functional regulation and improvement of optoelectronic devices.

Longitudinal optical phonons in photonic time crystals containing a stationary charge

Longitudinal optical phonons in photonic time crystals containing a stationary charge

Optical properties of 4H-SiC and 6H-SiC from infrared to vacuum ultraviolet spectral range ellipsometry (0.05–8.5 eV)

Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are obtained from reflection mode spectroscopic ellipsometry and unpolarized transmittance measurements for 4H and 6H stacking sequence silicon carbide (SiC) nitrogen-doped single crystals from the infrared (IR) to vacuum ultraviolet (VUV) spectral range. A single parametric model describing ɛ predominately for the ordinary directions is developed over the 0.05–8.5 eV spectral range from analysis of (0001)-oriented back side roughened 4H-SiC and 6H-SiC single crystals with some contribution from the extraordinary direction of 6H-SiC in the IR region. Indirect bandgaps for 4H-SiC and 6H-SiC are found to be 3.30 and 3.03 eV, respectively, and the corresponding direct optical gaps are at 4.46 and 4.42 eV. A model describing the optical response in the IR spectral range is created using a Drude expression and either transverse optical (TO) and longitudinal optical (LO) (TOLO) or Lorentz oscillator models. Free carrier concentration (N) is optically measured to be 3.7 × 1018 and 3.3 × 1018 cm−3 using TOLO and Lorentz oscillator models, respectively, and the corresponding carrier mobility (μ) is 34 and 39 cm2/V s for 4H-SiC. Under the same assumption for 6H-SiC, N is measured to 8 × 1018 cm−3 using either TOLO or Lorentz oscillator models and μ is 9 and 10 cm2/V s using the TOLO and Lorentz oscillator models, respectively, in the ordinary direction and 5 cm2/V s in the extraordinary direction using either model. For 4H-SiC, using the TOLO oscillator model, TO and LO phonon modes are measured at 797.7 and 992.1 cm−1, respectively, and corresponding modes are found at same locations using the Lorentz oscillator model. In 6H-SiC, using the TOLO model, TO modes in ordinary and extraordinary directions are found at 797.7 and 789.7 cm−1, and corresponding modes are at 796.9 and 788.9 cm−1 using the Lorentz oscillator model. The LO modes using the TOLO model are found at 992 and 984 cm−1 in the ordinary and extraordinary directions, respectively, and the same modes in the corresponding direction using the Lorentz oscillator model are located at 975.9 and 967.9 cm−1.

Modulating phononic landscapes: The role of silicon ion bombardment in tailoring Si/Si+Ge and SiO2/SiO2+Ge superlattices for advanced neutron superreflector applications

This study investigates the effects of silicon ion bombardment on the phononic properties of Si/Si+Ge and SiO2/SiO2+Ge superlattices to enhance neutron superreflector technology. Through precise ion implantation and Fourier Transform Infrared Spectroscopy (FTIR), we observed significant alterations in transverse and longitudinal optical phonon modes. The Si/Si+Ge system exhibited notable blueshifts and intensity changes, while SiO2/SiO2+Ge showed increased lattice disorder and peak broadening. These findings highlight ion bombardment's potential to optimize phononic landscapes for improved nuclear reactor safety and efficiency via advanced phonon engineering.

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001).

Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Synthesis and physical characterization of novel Ag2S-CdS /Ag /GNP ternary nanocomposite

A new type of Ag2S-CdS/Ag/GNP nanocomposite material was successfully synthesized in the presented work. The structural and physical properties of compounds were studied separately and together. Ag2S-CdS/Ag/GNP nanocomposite materials were studied by Xray diffraction (XRD), Ultraviolet-Visible (UV-Vis), Fourier Transform Infrared (FTIR), Raman spectroscopy and Scanning Electron Microscopy (SEM). Based on the results, Ag nanowires (NWs) were successfully synthesized, and then it was determined that during the hybridization process, two phases of acanthite Ag2S and the cubic crystal system of Ag2O were formed. Then, Ag2S-CdS NWs were formed from mixed monoclinic Ag2S and hexagonal CdS. In the absorption spectrum of Ag NWs, the main absorbance peaks were observed at 357.3 nm and 380.2 nm. The energy gap (Eg) values of the Ag sample are 3.8 eV. The band gap value of Ag2S (2.5, 3.8, 4.6 eV) and Ag2S-CdS (2.5, 3.8, 4.8 eV) have a triple value due to the formation of a hybrid structure. The Raman spectrum of Ag2S-CdS belongs to longitudinal-optical (LO) phonon modes of zinc-blende phase CdS and for the 1, 2, and 3 times spin-coated samples on the surface of GNP/PVA have observed all characteristic Raman peaks, which belong to NWs at 485.13 cm-1, and 960.22 cm-1.

Impact of material-dependent radiation – longitudinal optical phonon interaction on thermal electric-dipole radiation from surface metal − semiconductor grating structures

Infrared thermal radiation emission in the 8.5 – 28 THz frequency region is obtained using surface metal–semiconductor grating structures on undoped (u-) GaAs, u-GaP, u-ZnO, u-GaN, and n-type SiC in a temperature range of 430 – 630 K. These emissions resonate with longitudinal optical (LO) phonon or LO-like lattice vibration energies determined by the zero points of the real parts of the dielectric functions in the surface structures. The emissions of materials with Reststrahlen bandwidths of a few tens of cm−1 show the emissions resonating with their LO phonon modes, while materials with bandwidth of more than 170 cm−1 show peak energies significantly lower than the LO phonon: LO-like phonon resonance. The emission intensity is found to be dominated by the balance of radiative and nonradiative LO or LO-like phonon annihilation rates. The radiative rate is dominated by the LO-phonon–radiation interaction Hamiltonian and the Bose-Einstein factor. High emission intensity is obtained for the structure on u-ZnO with intense LO-like phonon–radiation interaction. The dependence of the emission intensity on temperature and emission window width for various materials shows the effect of material-dependent metal/semiconductor interface conditions on the emission efficiency.