In this work, arrays of MgO-based magnetic tunnel junction elements <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(5\times 20\ \mu{\rm m}^{2})$</tex> </formula> connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.