Localized Phonon Modes Research Articles

New Lead-free Hybrid Layered Double Perovskite Halides: Synthesis, Structural Transition and Ultralow Thermal Conductivity.

Hybrid layered double perovskites (HLDPs), representing the two-dimensional manifestation of halide double perovskites, have elicited considerable interest owing to their intricate chemical bonding hierarchy and structural diversity. This intensified interest stems from the diverse options available for selecting alternating octahedral coordinated trivalent [M(III)] and monovalent metal centers [M(I)], along with the distinctive nature of the cationic organic amine located between the layers. Here, we have synthesized three new compounds with general formula (R'/R'')4/2M(III)M(I)Cl8; where R'=C3H7NH3 (i.e. 3N) and R''=NH3C4H8NH3 (i.e. 4N4); M(III)=In3+ or Ru3+; M(I)=Cu+ by simple solution-based acid precipitation method. The structural analysis reveals that (4N4)2CuInCl8 and (4N4)2CuRuCl8 adopt the layered Dion Jacobson (DJ) structure, whereas (3N)4CuInCl8 exhibits layered Ruddlesden Popper (RP) structure. The alternative octahedra within the inorganic layer display distortions and tilting. Three compounds show temperature-dependent structural phase transitions where changes in the staking of inorganic layer, extent of octahedral tilting and reorientation of organic spacers with temperature have been noticed. We have achieved ultralow lattice thermal conductivity (κL) in the HLDPs in the 2 to 300 K range, marking a distinctive feature within the realm of HLDP systems. The RP-HLDP compound, (3N)4CuInCl8, demonstrates anisotropy in κL while measured parallel and perpendicular to layer stacking, showcasing ultralow κL of 0.15 Wm-1K-1 at room temperature, which is one of the lowest values obtained among Pb-free metal halide perovskite. The observed ultralow κL in three new HLDPs is attributed to significant lattice anharmonicity arising from the chemical bonding heterogeneity and soft crystal structure, which resulted in low-energy localized optical phonon modes that suppress heat-carrying acoustic phonons.

New Lead‐free Hybrid Layered Double Perovskite Halides: Synthesis, Structural Transition and Ultralow Thermal Conductivity

AbstractHybrid layered double perovskites (HLDPs), representing the two‐dimensional manifestation of halide double perovskites, have elicited considerable interest owing to their intricate chemical bonding hierarchy and structural diversity. This intensified interest stems from the diverse options available for selecting alternating octahedral coordinated trivalent [M(III)] and monovalent metal centers [M(I)], along with the distinctive nature of the cationic organic amine located between the layers. Here, we have synthesized three new compounds with general formula (R′/R′′)4/2M(III)M(I)Cl8; where R′=C3H7NH3 (i.e. 3N) and R′′=NH3C4H8NH3 (i.e. 4N4); M(III)=In3+ or Ru3+; M(I)=Cu+ by simple solution‐based acid precipitation method. The structural analysis reveals that (4N4)2CuInCl8 and (4N4)2CuRuCl8 adopt the layered Dion Jacobson (DJ) structure, whereas (3N)4CuInCl8 exhibits layered Ruddlesden Popper (RP) structure. The alternative octahedra within the inorganic layer display distortions and tilting. Three compounds show temperature‐dependent structural phase transitions where changes in the staking of inorganic layer, extent of octahedral tilting and reorientation of organic spacers with temperature have been noticed. We have achieved ultralow lattice thermal conductivity (κL) in the HLDPs in the 2 to 300 K range, marking a distinctive feature within the realm of HLDP systems. The RP‐HLDP compound, (3N)4CuInCl8, demonstrates anisotropy in κL while measured parallel and perpendicular to layer stacking, showcasing ultralow κL of 0.15 Wm−1K−1 at room temperature, which is one of the lowest values obtained among Pb‐free metal halide perovskite. The observed ultralow κL in three new HLDPs is attributed to significant lattice anharmonicity arising from the chemical bonding heterogeneity and soft crystal structure, which resulted in low‐energy localized optical phonon modes that suppress heat‐carrying acoustic phonons.

Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface

In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. The complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in an electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O terminated interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. This finding of the localized interfacial phonon associated with strong electron-phonon coupling provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface.

Nanoscale Localized Phonons at Al2O3 Grain Boundaries.

Nanoscale defects like grain boundaries (GBs) would introduce local phonon modes and affect the bulk materials' thermal, electrical, optical, and mechanical properties. It is highly desirable to correlate the phonon modes and atomic arrangements for individual defects to precisely understand the structure-property relation. Here we investigated the localized phonon modes of Al2O3 GBs by combination of the vibrational electron energy loss spectroscopy (EELS) in scanning transmission electron microscope and density functional perturbation theory (DFPT). The differences between GB and bulk obtained from the vibrational EELS show that the GB exhibited more active vibration at the energy range of <50 meV and >80 meV, and further DFPT results proved the wide distribution of bond lengths at GB are the main factor for the emergence of local phonon modes. This research provides insights into the phonon-defect relation and would be of importance in the design and application of polycrystalline materials.

Exploring flat-band properties in two-dimensional M3QX7 compounds.

We present a computational study of the M3QX7 family of two-dimensional compounds, focusing specifically on their flat-band properties. We use a high-throughput search methodology, accelerated by machine learning, to explore the vast chemical space spawned by this family. In this way, we identify numerous stable 2D compounds within the M3QX7 family. We investigate how the chemical composition can be manipulated to modulate the position and dispersion of the flat bands. By employing a tight-binding model we explain the formation of flat bands as a result of a relatively loose connection between triangular M3QX3 clusters via bridges of X atoms. The model provides an understanding of the residual interactions that can impact the band dispersion. The same loose connection between clusters not only leads to strongly localized electronic states and thus flat electronic bands but also leads to localized phonon modes and flat bands in the phonon dispersion.

Atomic Resolution Mapping of Localized Phonon Modes in Silicon Grain Boundaries.

Atomic Resolution Mapping of Localized Phonon Modes in Silicon Grain Boundaries.

Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices

To effectively regulate thermal transport for the near-junction thermal management of GaN electronics, it is imperative to gain an understanding of the phonon characteristics of GaN nanostructures, particularly the topological phonon properties connected to low-dissipation surface phonon states. In this work, a comprehensive study on phonon modes and topological phonon properties is performed from first principles in (GaN) x /(AlN) x and (AlGaN) x /(GaN) x (x = 1,2,3) superlattices. Phonon modes, including the dispersion relation, density of states, and participation ratio, were calculated for six GaN superlattices. The participation ratio results did not reveal the localized phonon mode. In topological phonon analyses, it is found that Weyl phonons with a Chern number of 1(−1) are present in all six GaN superlattices, consisting of trivial (GaN) and nontrivial (AlN and AlGaN) combinations. These phonons are located on either side of the k z = 0 plane symmetrically in the Brillouin zone. With the increase in the number of phonon branches in superlattices, the number of Weyl phonon points also increases from dozens to hundreds. One Weyl phonon with significant and clean surface states is selected and analyzed for each GaN superlattice. Among them, the Weyl phonon in (GaN)2/(AlN)2 superlattice mainly results from the lattice vibrations of Al and Ga atoms, while the Weyl phonons in other superlattices mainly result from the lattice vibrations of N atoms. The Weyl phonons at opposite k z planes form pairs in (GaN)2/(AlN)2, AlGaN/GaN, and (AlGaN)2/(GaN)2. Effects of strain including biaxial and uniaxial strain on Weyl phonons in GaN/AlN and AlGaN/GaN superlattices are investigated. Results indicate that Weyl phonons persist in large strain states, however, no monoclinic trend is observed due to the accidental degeneracy of these superlattices. The investigation in this work is promising to provide a deeper understanding of phonon properties and the topological effects of phonons in GaN nanostructures.

Atomic-Resolution Mapping of Localized Phonon Modes at Grain Boundaries.

Phonon scattering at grain boundaries (GBs) is significant in controlling the nanoscale device thermal conductivity. However, GBs could also act as waveguides for selected modes. To measure localized GB phonon modes, milli-electron volt (meV) energy resolution is needed with subnanometer spatial resolution. Using monochromated electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) we have mapped the 60 meV optic mode across GBs in silicon at atomic resolution and compared it to calculated phonon densities of states (DOS). The intensity is strongly reduced at GBs characterized by the presence of 5- and 7-fold rings where bond angles differ from the bulk. The excellent agreement between theory and experiment strongly supports the existence of localized phonon modes and thus of GBs acting as waveguides.

Extended Antibonding States and Phonon Localization Induce Ultralow Thermal Conductivity in Low Dimensional Metal Halide

AbstractThermal conductivity, which measures the ease at which heat passes through a crystalline solid, is controlled by the nature of the chemical bonding and periodicity in the solid. This necessitates an in‐depth understanding of the crystal structure and chemical bonding to tailor materials with notable lattice thermal conductivity (κL). Herein, the nature of chemical bonding and its influence on the thermal transport properties (2–523 K) of all‐inorganic halide perovskite Cs3Bi2I9 are studied. The κL exhibits an ultralow value of ≈0.20 W m−1K−1 in 30–523 K temperature range. The antibonding states just below the Fermi level in the electronic structure arising from the interaction between bismuth 6s and iodine 5p orbitals, weakens the bond and causes soft elasticity in Cs3Bi2I9. First‐principles density functional theory (DFT) calculations reveal highly localized soft optical phonon modes originating from Cs‐rattling and dynamic double octahedral distortion of 0D [Bi2I9]3− in Cs3Bi2I9. These low energy nearly flat optical phonons strongly interact with transverse acoustic modes creating an ultrashort phonon lifetime of ≈1 ps. While the presence of extended antibonding states gives rise to soft anharmonic lattice; Cs rattling provides sharp localized optical phonon modes, which altogether result in strong lattice anharmonicity and ultralow κL.

Charge order in the kagome lattice Holstein model: a hybrid Monte Carlo study

The Holstein model is a paradigmatic description of the electron-phonon interaction, in which electrons couple to local dispersionless phonon modes, independent of momentum. The model has been shown to host a variety of ordered ground states such as charge density wave (CDW) order and superconductivity on several geometries, including the square, honeycomb, and Lieb lattices. In this work, we study CDW formation in the Holstein model on the kagome lattice, using a recently developed hybrid Monte Carlo simulation method. We present evidence for sqrt{3}times sqrt{3} CDW order at an average electron filling of 〈n〉 = 2/3 per site, with an ordering wavevector at the K-points of the Brillouin zone. We estimate a phase transition occurring at Tc ≈ t/18, where t is the nearest-neighbor hopping parameter. Our simulations find no signature of CDW order at other electron fillings or ordering momenta for temperatures T ≥ t/20.

Strong Scattering from Low-Frequency Rattling Modes Results in Low Thermal Conductivity in Antimonide Clathrate Compounds

Recent discoveries of materials with ultralow thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity (0.4–0.6 W m–1 K–1 at 525 K). The materials of interest are the unconventional type-XI clathrate K58Zn122Sb207, the tunnel compound K6.9Zn21Sb16, and the type-I clathrate K8Zn15.5Cu2.5Sb28 discovered herein. Calculations of the phonon dispersions show that the type-XI compound exhibits localized (i.e., rattling) phonon modes with unusually low frequencies that span the entire acoustic regime. In contrast, rattling in type I clathrate is observed only at higher frequencies, and no rattling modes are present in the tunnel structure. Modeling reveals that low-frequency rattling modes profoundly limit the acoustic scattering time; the scattering time of the type-XI clathrate is half that of the type-I clathrate and a quarter of that of the tunnel compound. For all three materials, the thermal conductivities are additionally suppressed by soft framework bonding that lowers the acoustic group velocities and structural complexity that leads to diffusonic character of the optical modes. Understanding the details of thermal transport in structurally complex materials will be crucial for developing the next generation of thermoelectrics.

Single-atom vibrational spectroscopy with chemical-bonding sensitivity.

Correlation of lattice vibrational properties with local atomic configurations in materials is essential for elucidating functionalities that involve phonon transport in solids. Recent developments in vibrational spectroscopy in a scanning transmission electron microscope have enabled direct measurements of local phonon modes at defects and interfaces by combining high spatial and energy resolution. However, pushing the ultimate limit of vibrational spectroscopy in a scanning transmission electron microscope to reveal the impact of chemical bonding on local phonon modes requires extreme sensitivity of the experiment at the chemical-bond level. Here we demonstrate that, with improved instrument stability and sensitivity, the specific vibrational signals of the same substitutional impurity and the neighbouring carbon atoms in monolayer graphene with different chemical-bonding configurations are clearly resolved, complementary with density functional theory calculations. The present work opens the door to the direct observation of local phonon modes with chemical-bonding sensitivity, and provides more insights into the defect-induced physics in graphene.

Quantum transport in driven systems with vibrations: Floquet nonequilibrium Green's functions and the self-consistent Born approximation

We investigate the effects of alternating voltage on nonequilibrium quantum systems with localized phonon modes. Nonequilibrium Green's functions are utilized, with electron-phonon coupling being considered with the $GD$ approximation (self-consistent Born approximation). Using a Floquet approach, we assume periodicity of the dynamics. This approach allows us to investigate the influence of the driven electronic component on the nonequilibrium occupation of the vibrations. It was found that signatures of inelastic transport gained photon-assisted peaks. A simplistic model was proposed and found to be in good agreement with the full model in certain parameter ranges. Moreover, it was found that driving the alternating current at resonance with vibrational frequencies caused an increase in phonon occupation.

Identifying the effect of Ni solubility on the thermoelectric properties of HfNiSn-based half-Heuslers

Phase diagrams provide important guidance for the optimal design of thermoelectric materials. Previous studies demonstrated a specific solubility of Ni atoms in TiNiSn and ZrNiSn, which can impede phonon transport and regulate the electronic band structure. But the thermodynamic investigation and the effect of Ni content on thermoelectric properties for the HfNiSn system are absent. In this work, we constructed an isothermal section phase diagram of the Hf-Ni-Sn ternary system at 1173 K and determined the solubility of Ni in the vacant position to be 0.04 < x < 0.16. At this temperature profile, the stoichiometric ratio HfNiSn is located in the two-phase region of HfNi1+xSn + Sn when it is in equilibrium, and the homogeneity region may be broken by the process of ball milling and sintering. Calculation results indicate that the excess-Ni in HfNiSn will generate impurity levels in the forbidden band and localized phonon modes above the acoustic branch. The intermediate-Heusler phase formed by extra Ni atoms can work as a phonon scattering center and reduce the lattice thermal conductivity near room temperature, but the Sn impurities generated by the disrupted thermal equilibrium will neutralize this effect at high temperatures. Overall, the impact of the Ni-rich environment on HfNiSn-based half-Heusler is very different from that of alloys TiNiSn and ZrNiSn, which is of great significance for the comprehensive understanding of (Ti, Zr, Hf)NiSn system.

Near-field radiative heat transfer between irregularly shaped dielectric particles modeled with the discrete system Green's function method

Near-field radiative heat transfer (NFRHT) between irregularly shaped dielectric particles made of SiO2 and morphology characterized by Gaussian random spheres is studied. Particles are modeled using the discrete system Green's function (DSGF) approach, which is a volume integral numerical method based on fluctuational electrodynamics. This method is applicable to finite, three-dimensional objects, and all system interactions are defined independent of thermal excitation by a generalized system Green's function. The DSGF method is deemed suitable to model NFRHT between irregularly shaped particles after verification against the analytical solution for chains of two and three SiO2 spheres. The NFRHT results reveal that geometric irregularity in particles leads to a reduction of the total conductance from that of comparable perfect spheres at vacuum separation distances smaller than the particle size, a regime in which NFRHT is a surface phenomenon. At vacuum separation distances larger than the particle size, NFRHT becomes a volumetric process, and the total conductance between irregularly shaped particles converges to that of comparable perfect spheres. Spectral analysis reveals, however, that particle irregularity leads to damping and broadening of resonances at all separation distances, thereby highlighting the importance of the DSGF method for spectral engineering in the near field. The reduced spectral coherence when particle size is larger than the vacuum separation distance is attributed to coupling of surface phonon-polaritons within the randomly generated, distorted particle features. For particle size smaller than the vacuum separation distance, resonance broadening and damping is linked with the multiple localized surface phonon modes supported by the composite spherical harmonic morphologies of the Gaussian random spheres.

Coherent control of a local phonon in trapped ions using dynamical decoupling

In this paper, we present a dynamical decoupling (DD) technique to coherently control the dynamics of a single local phonon in trapped ions. A 2$\pi$ rotation at a motional sideband transition flips the sign of the relevant local phonon state, resulting in cancellation of the phonon dynamics. In this work, we implement DD using single and multiple blue-sideband pulses to control a single local phonon in two $^{40}{\rm Ca}^{+}$ ions in a linear Paul trap. Our proposed DD technique can be used to engineer coupling between local phonon modes.

Phonon localization and resonance in thermal transport of pillar-based GaAs nanowires

Exploring the possibility of nanostructures to modulate thermal conductivity (TC) contributes to promote a deeper comprehension of phonon diffusion and transport processes with the design of thermally insulated devices with high ZT values, and the GaAs nanowires (NWs) widely used in optoelectronic and microelectronic devices exhibit nondiffusive phonon thermal transport phenomena attributed to size effects, while ignoring the wave effects of phonons. Here, we simulate the TC of pillar-based GaAs NWs using non-equilibrium molecular dynamics and Monte Carlo simulations. The spatial distribution of density of states, temperature and heat flow distribution clouds, phonon participation rate, dispersion curves and phonon transmittance of atoms were calculated to investigate the phonon thermal transport processes in pillar-based NWs. The calculation results show that the pillar-based surface reduce the TC by 16%, the TC of pristine NW increases with axial and equivalent diameter, and the TC of pillar-based NW increases nonlinearly with axial length and increases with radial length. The phonon-surface scattering intensity is enhanced by the perturbation introduced by the pillared surface with a substantial decrease in phonon transmission capacity and a break in long-wavelength phonon transport even annihilated, which leads to surface phonon localization. Nanopillars not only enhance the phonon-surface scattering intensity at low frequencies, but also reconfigure the dispersion curve to reduce the group velocity. A series of flat resonance phonon modes are generated throughout the whole spectrum due to the hybridization between the local resonance phonon modes of the nanopillar and the phonon modes of the substrate NWs, resulting in the phonon modes shifting to lower frequencies. The pillar-based surface induced surface phonon localization and local resonance phenomenon contributes to the modulation of phonon thermal transport in GaAs-based field-effect transistors.

Tuning of Structural and Magnetic Properties of SrSnO3 Nanorods in Fabrication of Blocking Layers for Enhanced Performance of Dye-Sensitized Solar Cells

Perovskite-based SrSnO3 nanostructures doped with indium are prepared via a facile chemical precipitation method. Prepared nanostructures are used to assemble the dye-sensitized solar cells (DSSCs), and their photovoltaic response and electrochemical impedance spectra are measured. The synthesized samples are subjected to structural, morphological, optical, and magnetic properties. The X-ray diffraction pattern confirms the single-phase orthorhombic (Pbnm) perovskite structure. Local structural and phonon mode variations are examined by Raman spectra. Electron micrographs disclose the nanorods. The elements (Sr, Sn, O, and In) and the existence of oxygen vacancies are identified by X-ray photoelectron spectroscopy analysis. Surface area analysis demonstrates the higher surface area (11.8 m2/g) for SrSnO3 nanostructures. Optical absorption spectra confirm the good optical behavior in the ultraviolet region. The multicolor emission affirms the presence of defects/vacancies present in the synthesized samples. The appearance of interesting ferromagnetic behavior in the prepared samples is due to the presence of F-center exchange interactions. Under the irradiation (1000 W/m2) of simulated sunlight, the DSSC fabricated by 3% In-doped SrSnO3 exhibits the highest η of 5.68%. Hence, the blocking layers prepared with pure and indium-doped samples could be the potential candidates for DSSC applications.

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P).

Here, we report on a new kind of compound, XδIr4X12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic-resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in XδIr4X12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct pairing mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of XδIr4X12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.

Phononic real Chern insulator with protected corner modes in graphynes

Higher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and $\gamma$-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.