Local Magnetoresistance Research Articles

Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T.

Inkjet-printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to the charge transport in iGr is yet to be explored. Here, the first magneto-transport study of iGr in high magnetic fields up to 60 T is presented. The observed quantum phenomena, such as weak localization and negative magnetoresistance, are strongly affected by the thickness of the iGr film and can be explained by a combination of intra- and inter-flake classical and quantum charge transport. The quantum nature of carrier transport in iGr is revealed using temperature, electric field, and magnetic field dependences of the iGr conductivity. These results are relevant for the exploitation of inkjet deposition of graphene, which is of particular interest for additive manufacturing and 3D printing of flexible and wearable electronics. It is shown that printed nanostructures enable ensemble averaging of quantum interference phenomena within a single device, thereby facilitating comparison between experiment and underlying statistical models of electron transport.

Spin-textured Volkov–Pankratov states and their tunnel magnetoresistance response

Volkov–Pankratov (VP) states are a family of sub-gap states that appear at the smooth interface/domain wall between topologically distinct gaped states. We carry out quantum transport simulations on one- and two-dimensional lattice models to demonstrate the emergence of such states in the edge spectrum of a quantum spin Hall system subjected to a smoothly varying exchange field that switches its sign at a given spatial point. We show the VP states possess non-trivial spin textures that can be characterized by a winding number in real space. It is further demonstrated that the application of an electric field along the edge provides control of this spin texture without altering the winding number. Finally, we illuminate how these spin textures can be read off via the local tunnel magnetoresistance (TMR) response of spin-polarized tunnel probes attached to the edge and the TMR can be controlled by purely electrical means akin to a Datta–Das type spin transistor.

高质量PtP2晶体中的三维弱局域化和负磁阻效应

高质量PtP2晶体中的三维弱局域化和负磁阻效应

Temperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy/Ge Lateral Spin-Valve Devices

We investigate temperature dependence of two-terminal local magnetoresistance (MR) effect for germanium (Ge)-based lateral spin-valve (LSV) devices with three different ferromagnet (FM)/Ge Schottky tunnel contacts. When we insert a 0.7-nm-thick Fe layer between Co-based Heusler alloy and Ge interfaces in LSV devices, the magnitude of the local MR signals is significantly improved from low temperatures to room temperature. However, the temperature dependence of the MR ratio is still large even for LSV devices with Fe insertion. From the analysis based on the standard theory, the temperature-dependent MR ratio can be interpreted in terms of thermally excited spin waves ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T^{3/{2}}$ </tex-math></inline-formula> law) in FM contacts. The physical origin of the decay of the two-terminal MR ratio in Ge-based LSV devices is the same as that of the four-terminal nonlocal spin signals because small temperature dependence of contact resistance is demonstrated in FM/Ge Schottky tunnel contacts which show almost linear <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$|J|$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> characteristics and low interface resistance.

Activation of magnetic moments by annealing in chemical vapor deposited graphene

The effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at $300{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$ in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.

Large and Local Magnetoresistance in a State-of-the-Art Perpendicular Magnetic Medium.

PurposeMagnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and, when combined with magnetotransport phenomena for read/write operations, may lead to a novel concept for magnetic recording with high areal density.Materials and MethodsThe CoPtCr films were deposited by an epitaxy-like sputtering and contained several perpendicularly magnetized granular-media layers with different coercivities; they are very much like the state-of-the-art perpendicular magnetic medium, which can be found in today’s hard disc drives. Magnetoresistive properties of bulk films were assessed by measuring the film resistance in the standard Van der Pauw geometry, while the local transport was probed by the point-contact technique.ResultsThe bulk measurements showed only a negligible magnetoresistance of less than 0.02%. In contrast, the local point-contact measurements revealed giant-magnetoresistance-like changes ΔR in local resistance of the contact R with more than 10,000% ratio ΔR/R.ConclusionThe observed large and local magnetoresistive effect could be tentatively attributed to a tunnel magnetoresistance between oxide-segregated CoPtCr grains with different coercivities. The tunneling picture of electronic transport in our granular medium was confirmed by the observation of tunneling-like current–voltage characteristics of the contacts and bias dependence of the contact magnetoresistance – both the local point-contact resistance and magnetoresistance were found to decrease with the applied dc bias.

An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

We report room-temperature long-distance spin transport of magnons in antiferromagnetic thin-film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low-frequency magnons, through electrical transport measurements demonstrating that the introduction of nonmagnetic dopants does not strongly reduce the transport length scale, showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the nonlocal signal independent of the magnetic state visible, in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.

Local spin transfer torque and magnetoresistance in domain walls with variable width

Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with special characteristics is becoming more and more prevalent. We now present a full quantum investigation of the magnetoresistance and the spin transfer torque in a domain wall, which is embedded in a nano-contact of Ni$_{80}$Fe$_ {20}$, where the size of the domain wall becomes a relevant tunable parameter. The dependence on the domain wall width as well as the spatial dependence of the torque along the domain wall can be analyzed in complete detail. The magnetoresistance drops with increasing domain wall width as expected, but also shows characteristic modulations and points of resonant spin-flip transmission. The spin transfer torque has both significant in-plane and out-of-plane contributions even without considering relaxation. A closer inspection identifies contributions from the misalignment of the spin density for short domain walls as well as an effective gauge field for longer domain walls, both of which oscillate along the domain wall.

Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices

We find relatively large inverse local two-terminal magnetoresistance (MR) effect in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. The local MR as a function of the bias voltage applied between two FM/SC contacts shows nonlinear variation, including sign inversion in high bias-voltage conditions. The inverse local MR can be observed up to room temperature, while conventional positive local MR disappears at around 225 K. To consider the origin of the large inverse MR effect, the influence of the nonlinear spin-detection efficiency at a biased FM/SC contact and the spin-drift effect in the SC channel are discussed.

Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures

We study the impact of Ga ion exposure on the local and nonlocal magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam and study the ensuing changes in the magnetoresistive response. We find that the nonlocal magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates the notion that pure spin currents carried by magnons are crucial for the nonlocal magnetotransport effects observed in magnetic insulator/metal nanostructures, while possible transport processes through the substrate can be ruled out.

Thermal transport driven by charge imbalance in graphene in a magnetic field close to the charge neutrality point at low temperature: Nonlocal resistance

Graphene grown epitaxially on SiC, close to the charge neutrality point (CNP), in an orthogonal magnetic field shows an ambipolar behavior of the transverse resistance accompanied by a puzzling longitudinal magnetoresistance. When injecting a transverse current at one end of the Hall bar, a sizeable non local transverse magnetoresistance is measured at low temperature. While Zeeman spin effect seems not to be able to justify these phenomena, some dissipation involving edge states at the boundaries could explain the order of magnitude of the non local transverse magnetoresistance, but not the asymmetry when the orientation of the orthogonal magnetic field is reversed. As a possible contribution to the explanation of the measured non local magnetoresistance which is odd in the magnetic field, we derive a hydrodynamic approach to transport in this system, which involves particle and hole Dirac carriers, in the form of charge and energy currents. We find that thermal diffusion can take place on a large distance scale, thanks to long recombination times, provided a non insulating bulk of the Hall bar is assumed, as recent models seem to suggest in order to explain the appearance of the longitudinal resistance. In presence of the local source, some leakage of carriers from the edges generates an imbalance of carriers of opposite sign, which are separated in space by the magnetic field and diffuse along the Hall bar generating a non local transverse voltage.

Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm2, which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.

Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device

Utilizing a Si0.1Ge0.9 layer grown on Ge/Si(111) as a spin-transport channel and a Co2FeAl0.5Si0.5 ferromagnetic epilayer as a spin injector and detector, we demonstrate two-terminal local magnetoresistance signals at low temperatures in SiGe based lateral spin-valve devices. The magnitude of the local magnetoresistance signals is twice as large as that of nonlocal signals below 50 K. The local magnetoresistance signal can be observed up to 225 K, at which the nonlocal magnetoresistance signals already disappear. To observe the local magnetoresistance signal at higher temperatures, we should consider the spin detection sensitivity of the spin detector contact in the used lateral spin-valve devices.

Self-consistent study of local and nonlocal magnetoresistance in a YIG/Pt bilayer

We present a self-consistent study of the local spin Hall magnetoresistance (SMR) and nonlocal magnon-mediated magnetoresistance (MMR) in a heavy-metal/magnetic-insulator heterostructure at finite temperature. We find that the thermal fluctuation of magnetization significantly affects the SMR. It appears unidirectional with respect to the direction of electrical current (or magnetization). The unidirectionality of SMR originates from the asymmetry of creation or annihilation of thermal magnons induced by the spin Hall torque. Also, a self-consistent model can well describe the features of MMR.

Defects controlled hole doping and multivalley transport in SnSe single crystals

SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

Observation of Magnetoresistance Effect in $n$ -Type Non-Degenerate Germanium With Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes

The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of $7.0~\Omega \mu \text{m}^{{{2}}}$ at $V_{{\rm {bias}}} = 663$ mV. The signal decreased with increasing temperature but was still observed up to 160 K.

Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide

The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov–Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in HxVO2, a poor metal (in violation of the Mott–Ioffe–Regel limit) stabilized by the suppression of the VO2 metal-insulator transition through atomic hydrogen doping. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed doping level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals.

Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator devices

The post annealing temperature dependence of spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (TA) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to TA &amp;lt; 400°C, however a slight decrease above TA ≥ 400°C is observed. This behavior is consistent with the TA dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals and the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co2FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and TA = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.

Local Magnetoelectric Effect in La-Doped BiFeO3 Multiferroic Thin Films Revealed by Magnetic-Field-Assisted Scanning Probe Microscopy.

Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~40 Oe is obtained, at which the ferroelectric polarization reaches the maximum. Moreover, we carry out the magnetic-field-dependent surface conductivity measurements and illustrate the origin of local magnetoresistance in the La-doped BiFeO3 thin films, which is closely related to the local ferroelectric polarization response to external magnetic fields. This work not only provides a useful technique to characterize the local magnetoelectric coupling for a wide range of multiferroic materials but also is significant for deeply understanding the local multiferroic behaviors in the BiFeO3-based systems.

Observation of large spin accumulation voltages in nondegenerate Si spin devices due to spin drift effect: Experiments and theory

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. This is the largest spin-accumulation voltage measured in semiconductor-based LSVs. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin-accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two terminal scheme. This finding provides a useful guiding principle for spin metal-oxide semiconductor field-effect transistor (MOSFET) operations.