Linewidth Laser Diodes Research Articles

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need for wavelength versatility. To this end, we demonstrate for the first time the flip-chip integration of a GaSb semiconductor optical amplifier with a silicon photonic circuit, addressing the transition of photonic integration technology towards mid-IR wavelengths. In particular, an on-chip hybrid DBR laser emitting in the 2 µm region with an output power of 6 mW at room temperature is demonstrated. Wavelength locking was achieved employing a grating realized using 3 µm thick silicon-on-insulator (SOI) technology. The SOI waveguides exhibit strong mode confinement and low losses, as well as excellent mode matching with GaSb optoelectronic chips ensuring low loss coupling. These narrow line-width laser diodes with an on-chip extended cavity can generate a continuous-wave output power of more than 1 mW even when operated at an elevated temperature of 45°C. The demonstration opens an attractive perspective for the on-chip silicon photonics integration of GaSb gain chips, enabling the development of PICs in a broad spectral range extending from 1.8 µm to beyond 3 µm.

18.4 GHz evenly spaced flat multi-wavelength Brillouin–Raman comb fiber laser in the U-band region

We report on a double spaced Brillouin–Raman comb fiber laser covering the spectral range of 1654–1677 nm. A 3 W fiber laser source with center wavelength at 1545 nm is used as the Raman pump for a 2.6 km dispersion compensation fiber to generate peak Raman gain at 13.2 THz away from the Brillouin pump (BP) which is around 1655 nm. A 5 mW narrow linewidth laser diode is utilized as the BP to generate multiwavelength Brillouin–Raman comb fiber laser (MBRCFL). A stable MBRCFL is generated with maximum bandwidth of 23 nm which contains 136 Brillouin Stokes with 0.168 nm spacing between BP and first Stoke corresponding to 18.4 GHz frequency spacing, an average power of 340 mW and optical signal to noise ratio of 26 dB. The output power fluctuation of less than 4% is measured over a period of 4 h. Moreover, the slope efficiency of 34% is achieved while the flat-amplitude bandwidth of about 17 nm is observed.

Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating

We realize a fiber Bragg grating InGaN-based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrowband fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode suppression ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.

Research of the Mode Instability Threshold in High Power Double Cladding Yb‐doped Fiber Amplifiers

We experimentally investigate the behavior of the mode instability (MI) threshold in the double cladding Yb‐doped fiber amplifier when the amplifier is pumped by broad linewidth laser diodes and narrow linewidth laser diodes respectively. It is found that the MI threshold increases by 26% when the amplifier is pumped by the broad linewidth laser diodes. Experiment results show that the MI threshold is affected by the local heat load rather than the average or the total heat load. The calculation shows that the local heat deposit actually plays the key role to stimulate the MI behaviour. At the MI threshold position in the fiber, the local heat deposit also changes dramatically. The effect of the thermal conductivity on the MI threshold is also studied. Our investigation shows that the MI threshold increases from 1269 W to 1950 W when the thermal conductivity of the fiber amplifier is increased from 0.3 to 5 . Through optimizing the pump linewidth and the cooling efficiency of the gain fiber, the MI threshold is doubled in our experiment.

High power sub-ps pulse generation by compression of a frequency comb obtained by a nonlinear broadened two colored seed.

In this contribution we demonstrate the generation of a frequency comb with sub-picosecond pulses by seeding an amplifier with two narrow linewidth laser diodes separated by 50 GHz. The results are achieved in the normal dispersion regime with parameters where the forming of the comb is dominated by self-phase modulation. A numerical simulation is performed with different nonlinear interaction lengths, whereas the experimental realization is done in a high power Yb-doped fiber amplifier to generate the necessary nonlinearity. An output power of 750 W with compression to sub-picosecond pulse durations is shown. Further perspectives towards higher power levels and larger comb-line spacing are discussed.

Arbitrary pulse shaping in Er-doped fiber amplifiers—Possibilities and limitations

Abstract A temporal deformation of nanosecond laser pulses occurring during an amplification process in a two-stage erbium-doped fiber amplifier operating in saturation is presented. We discuss distortion of rectangular laser pulses with duration ranging from 5 ns to 300 ns, generated at 20 kHz repetition rate. Calculations of a suitable peak power scaling factor for distorted pulses are presented. A simple compensation method of temporal pulse distortion, based on the direct current modulation with the use of arbitrary function generator (AFG), is also reported. An appropriate input pulse shape modification leads to obtaining an output amplified pulse with any desired shape. The main limitation of pulse shaping in a fiber amplifier seeded by a narrow linewidth laser diode turns out to be stimulated Brillouin scattering (SBS). However, the pulse shaping method can also improve the amplifier performance by increasing the power threshold of SBS. SBS phenomenon in the context of arbitrary pulse shaping have been also discussed.

Hybrid optical and electronic laser locking using slow light due to spectral holes

We report on a narrow linewidth laser diode system that is stabilized using both optical and electronic feedback to a spectral hole in cryogenic Tm:YAG. The laser system exhibits very low phase noise. The spectrum of the beat signal between two lasers, over millisecond timescales, is either Fourier limited or limited by the -111dBc/Hz noise floor. The resulting laser is well suited to quantum optics and sensing applications involving rare earth ion dopants.

A novel discrete mode narrow linewidth laser diode for spectroscopic based gas sensing in the 1.5 μm region

The characteristics of a novel Discrete Mode laser diode are described with particular reference to its capability in spectroscopic based gas sensing. In this regard, its emission linewidth, Side Mode Suppression Ratio and tuneability are of particular note. The measured narrow linewidth of 550 kHz has applications with respect to spectrally narrow absorption features found, for example, in saturated absorption lines, in hyperfine structure of some rotational manifolds and in whispering gallery mode features associated with optical microspheres. Other notable measured characteristics show mode-hop-free temperature tuning of 11 nm at a linear tuning rate of 0.1 nm/°C and a Side Mode Suppression Ratio in the range 56 to 46 dB and a long term (72 hours) wavelength stability of 1 pm per day. In essence, this novel Discrete Mode laser displays excellent potential for diode laser based sensing applications in the near infrared.

Development of an optical frequency comb around 1556 nm referenced to an Rb frequency standard at 778 nm

To transfer and expand in the optical telecommunication range the accurate 5S1/2(F = 3) – 5D5/2 (F = 5) rubidium frequency reference at 778 nm (385.285 THz), we employ a second harmonic generation (SHG) process coupled to an optical frequency comb (OFC) both based on the use of a low power and narrow linewidth laser diode operating around 1556 nm. The Rb optical frequency reference is known with an accuracy of 2.6 × 10−12 and exhibits a frequency stability of 4 × 10−13τ−1/2, with a Flicker plateau of 2 × 10−14 for τ > 200 s. With 20 mW of laser power at 1556 nm, we perform a SHG process in a periodically poled lithium niobate (PPLN) crystal and we obtain 6.5 μW of harmonic radiation at 778 nm, used to phase lock the IR laser against a Rb optical frequency standard (OFS). This Rb-referenced fundamental radiation at 1556 nm is duplicated as 34 lines spaced by 10 GHz using an electro-optic phase modulator (EOM). This preliminary result is mainly limited by unexpected high optical losses in the Fabry Perot cavity, which comprises the EOM.

Narrow linewidth laser diodes with broad continuous tuning range

A fast electronic frequency stabilisation scheme is presented which improves the coherence properties of near IR laser diodes substantially. The control loop is effective even under fast, wideband frequency tuning conditions, which opens up new fields of application in spectroscopy, range finding and data communication.