Light Extraction Efficiency Research Articles

Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures

The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs. The appropriate period thickness of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may enhance the hole injection of DUV LEDs. Therefore, compared with the reference LEDs, the DUV LEDs with the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL presented forward voltage reduction of 0.23 V and light output power improvement of 15% at a current of 350 mA. Furthermore, the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL could slightly suppress the Auger recombination and current overflow of the DUV LEDs in a high-current operation region. In addition to improved carrier injection, the DUV LEDs with the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL hole injection structure showed reduced light absorption at their emission wavelength compared with the reference LEDs. Therefore, the DUV LEDs with p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may exhibit better light extraction efficiency than the reference LEDs. The enhancement of p-Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL may contribute to improvements in light extraction and hole injection.

Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall.

In this Letter, we perform a comprehensive investigation on the optical characterization of micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting the light extraction behavior in relation to the design of chip sidewall angle. We found that the micro-LEDs with a smaller inclined chip sidewall angle (∼33∘) have improved external quantum efficiency (EQE) performance 19% more than that of the micro-LEDs with a larger angle (∼75∘). Most importantly, the EQE improvement by adopting an inclined sidewall can be more outstanding as the diameter of the LED chip reduces from 40 to 20 μm. The enhanced EQE of the micro-LEDs with smaller inclined chip sidewall angles can be attributed to the stronger reflection of the inclined sidewall, leading to enhanced light extraction efficiency (LEE). In the end, the numerical optical modeling further reveals and verifies the impact of the sidewall angles on the LEE of the micro-LEDs, corroborating our experiment results. This Letter provides a fundamental understanding of the light extraction behavior with optimized chip geometry to design and fabricate highly efficient micro-LEDs in a DUV spectrum of the future.

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film as scattering medium as well as light-coupling component was prepared by electrochemical (EC) etching followed by annealing process. The Lu2O3:Eu film as fluorescence medium was deposited on the NP-GaN substrate via pulse laser deposition (PLD) method, which has out-of-plane epitaxial relationship of Lu2O3 (222) || GaN (0002). By changing etching and annealing conditions, the average pore diameter, pore density and pore sidewall roughness of NP-GaN are controlled. The experiment shows that the photoluminescence (PL) intensities and quantum efficiencies of epitaxial films are related to the pore density and sidewall roughness of NP-GaN substrates. Due to the scattering effect of nanopores and light-coupling inside Lu2O3:Eu films on the NP-GaN substrates, the PL intensities were enhanced 13–96% compared with that of the films on as-grown GaN substrates, although the crystal quality of the epitaxial film becomes worse with the increase of porosity of the substrates.

Enhanced light extraction efficiency of an LED package by a surface-mounted amorphous photonic structure.

In this study, we propose a low-cost, simple and feasible post-processing approach to improve the light extraction efficiency (LEE) of LED packages. Amorphous photonic structures (APSs) with only short-range order are fabricated from anodic aluminum oxide (AAO) and transferred to intermediate polymer stamp (IPS) by nanoimprint technology. The IPS with APSs is directly mounted onto the surface of an LED package, where the LEE is achieved as 94.6%. The scanning electron microscope (SEM) images of AAO templates and imprinted IPS are analyzed by radial distribution function and diameter histogram. The far-field patterns of APS-mounted LED packages are measured in electroluminescence (EL). The three-dimensional finite-difference time-domain (3D-FDTD) calculations of transmittance of APSs confirm that they improve the light extraction above the critical angle. Two-dimensional Fourier power spectra from SEM images of APSs are also calculated. The LEE enhancement is attributed to that the APSs have short-range order on a length scale comparable to emission wavelength of LED. We provide novel multistage simulations in a simplified FDTD model for the LED package. Finally, we discuss the influence of the morphology of APSs on the LEE of the APS mounted LEDs.

Issue of spatial coherence in MQW based micro-LED simulation.

In existing flip-chip LED simulations, the light extraction efficiency is related to the multiple quantum well (MQW) to metal reflector distance because of optical interference. We calculate the contrast using several typical light intensity distributions among the several QWs in MQW. The coherence is obtained analytically. When the luminosity of each QW is equal, the contrast is ∼0, meaning the light is incoherent, contrary to traditional studies. The spatial coherence is important only when the light emission comes from just one QW. As the MQW has a not negligible thickness, the traditional single-dipole model is no longer accurate.

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones.

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined sidewalls. In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs. The experimental results manifest that when compared with DUV LEDs only having the air-cavity-shaped inclined sidewall, the optical power for the DUV LEDs with laterally over-etched p-GaN at the top of the truncated cone is enhanced by 30% without sacrificing the forward bias. It is because the over-etched p-GaN makes little effect on the carrier injection and does not affect the ohmic contact resistance. Moreover, the simulation results show that the truncated cone with laterally over-etched p-GaN layer can enhance the LEE because the reduced p-GaN area can suppress the optical absorption and supplies additional light paths for DUV photos. Then, more light will be reflected into escape cones at the sapphire side.

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure.

For high-power applications, it is important to improve the light extraction efficiency and light output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection micro structure (CRS) were fabricated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs was increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact orifices. It exhibited markedly smaller optical degradation and thus higher device reliability as compared to normal Ag-based FCLED. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

Realization of electrically driven AlGaN micropillar array deep-ultraviolet light emitting diodes at 286 nm

We report on the realization of top-down fabricated, electrically driven, deep-ultraviolet (DUV) AlGaN micropillar array light emitting diodes (LEDs) with high output power density. Ordered arrays of micropillars with the inverse-taper profile were formed from an AlGaN epitaxial stack (epistack) using a Ni-masked Cl2 plasma dry etch and KOH-based wet etching. Following deposition of the n-contact, polydimethylsiloxane was spin-coated and etched-back to reveal the tips of the pillars to allow for formation of the p-contact. The DUV LEDs were tested at the wafer-level using a manual probe station to characterize their electrical and optical properties, revealing stable electroluminescence at 286 nm with a narrow 9-nm linewidth. Optical output power was found to be linearly related to current density, with output power densities up to 35 mW/cm2, comparable to the results reported for epitaxially grown DUV nanowire LEDs. Simulations revealed that the inverse-taper profile of the micropillars could lead to large enhancements in light extraction efficiency (ηEXT) of up to 250% when compared to micropillars with vertical sidewalls. The realization of ordered, electrically driven, top-down fabricated micropillar DUV LEDs with competitive output power represents an important step forward in the development of high-efficiency, scalable DUV emitters for a wide range of applications.

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced internal quantum efficiency of red emitting InGaN/InGaN quantum wells was measured with a value above 10% at 640 nm. 10 μm diameter circular micro-LEDs are emitted at 625 nm with an external quantum efficiency of 0.14% at 8 A cm−2 with an estimated light extraction efficiency below 4%. With a a lattice parameter of 3.210 Å, InGaN based red LED can also emit up to 650 nm.

Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

In this report, we investigate the impact of a thin p-GaN layer on the efficiency for AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs). According to our results, the light extraction efficiency (LEE) becomes higher with the decrease of the p-GaN layer thickness, which can be ascribed to the decreased absorption of DUV emission by the thin p-GaN layer. Moreover, we also find that the variation trend of external quantum efficiency (EQE) is consistent with that of LEE. Therefore, we can speculate that high-efficiency DUV LEDs can be achieved by using thin p-GaN layer to increase the LEE. However, a thin p-GaN layer can also cause severe current crowding effect and the internal quantum efficiency (IQE) will be correspondingly reduced, which will restrict the improvement of EQE. In this work, we find that the adoption of a current spreading layer for such DUV LED with very thin p-GaN layer can facilitate the current spreading effect. For the purpose of demonstration, we then utilize a well-known p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layer. Our experimental and numerical results show that, as long as the current crowding effect can be suppressed, the DUV LED with thin p-GaN layer can significantly increase the EQE and the optical power thanks to the enhanced LEE.

Suppressing surface plasmon losses to improve the efficiency of blue organic light-emitting diodes using the plasmonic quasi-bandgap phenomenon

It is a persistent problem in organic light-emitting diode (OLED) display devices that the efficiency of blue-light source materials is lower than that of green- or red-light source materials. To address this problem, numerous studies have investigated blue-light-emitting materials. However, ensuring the reliability of the blue-light-emitting materials has been difficult in most studies. In this study, electrodes using asymmetric dielectric/metal/dielectric structures with plasmonic quasi-bandgap characteristics were developed to achieve a highly efficient blue fluorescent OLED. The electrodes were applied in a microcavity OLED and a transparent OLED. Using the developed electrode in fabricated OLED devices not only maximized the cavity resonance effect and transparency, but also preserved the advantage of the work function of the metal in terms of electrical properties, with high device stability. The approach also minimized losses caused by surface plasmon polaritons, which is a blind spot in the optical aspect of metal electrodes, resulting in improved light extraction efficiency.

A highly transparent laminated composite cathode for organic light-emitting diodes

Transparent conductive electrodes are one of the important components of organic optoelectronic devices. Mg:Ag alloys have been widely used as a semi-transparent cathode for top-emitting organic light-emitting diodes (OLEDs) or transparent OLEDs (TrOLEDs) due to their high conductivity and relatively low work function. However, their low transmittance makes the light-extraction efficiency to be comparatively low. In this study, a highly transparent (84.6% in the visible light range), conductive, laminated cathode with the structure of ZnO/Mg:Ag/ZnO was fabricated via atomic layer deposition (ALD). ALD-deposited ZnO is used to protect the vulnerable ultrathin Mg:Ag-alloy layer, while preserving its low work function for the entire structure. In particular, the bottom ZnO layer is used as an ETL, which can provide reasonable energy alignment between the cathode layer and the emission layer and prevent metal particles from penetrating into the underlying organic layer. The top-emission OLED, which is prepared in this study by using the laminated cathode, showed an 85.8% increase in brightness, with a current density of 11.2 mA/cm3 at 4.0 V, which is an ultra-low voltage compared with devices made with Mg:Ag cathodes. In addition, the total luminance of TrOLEDs increases 34.4% compared with devices using Mg:Ag cathodes. Furthermore, the average transmittance of the device was still as high as 77.19% for visible light.

Light extraction in tandem organic light emitting diodes

Since the invention of organic light emitting diodes (OLEDs), great research efforts have been dedicated to improving their efficiency and lifetime. For high-brightness applications, tandem OLED structures have advantages because of the lower current densities required to achieve high brightness. With the successful development of highly efficient charge generation layers, high brightness tandem OLEDs are used in displays and lighting. However, the major challenge for tandem OLEDs is the low light extraction efficiency, because about 50% of the light is trapped inside the device as waveguide modes. In this Perspective, we first review the recent works done on light extraction, analyze different waveguide mode extraction structures, and then identify the key factors determining the extraction efficiencies in tandem OLEDs.

The Light Extraction Efficiency of GaN-based LED with Air-Hole Photonic Crystal Structures

In order to improve the light extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs), a layer of cylindrical air-hole photonic crystal (PC) structure inserted into P-GaN is proposed and investigated numerically. Finite difference time domain (FDTD) method is used to make a series of simulations in the LEE of GaN-based LED with air-hole photonic crystal structure. According to the variable-controlling approach, the PC structure is simulated and optimized. The results of the simulations show that the LEE depends on the PC’s position and relevant structural parameters. When PC is etched in the active layer, and its dielectric constant [Formula: see text][Formula: see text][Formula: see text]m, etching [Formula: see text][Formula: see text][Formula: see text]m and air-hole radius [Formula: see text][Formula: see text][Formula: see text]m, higher LEE is obtained as 44.5%, translated into a 13.6-fold enhancement for the case of a planar LED. The remarkable enhancement is of particular interest for improving LEE of LED and provides a theoretical reference for future LED structure design efforts.

Exploring superlattice DBR effect on a micro-LED as an electron blocking layer.

The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically investigated to improve wall-plug efficiency (WPE). The DBR consists of AlGaN/GaN superlattice (high refractive index layer) and GaN (low refractive index layer). It is observed that the reflectivity of the p-region and light extraction efficiency (LEE) increase with the number of DBR pairs. The AlGaN/GaN superlattice EBL is well known to reduce the polarization effect and to promote hole injection. Thus, the superlattice DBR structure shows a balanced carrier injection and results in a higher internal quantum efficiency (IQE). In addition, due to the high refractive-index layer replaced by the superlattice, the conductive DBR results in a lower operation voltage. As a result, WPE is improved by 22.9% compared to the identical device with the incorporation of a conventional p-type EBL.

Design and fabrication of hybrid MLAs/gratings for the enhancement of light extraction efficiency and distribution uniformity of OLEDs.

Extracting light from organic light-emitting diodes (OLEDs) and improving the angular distribution are essential for their commercial applications in illumination and displays. In this work, hybrid microlens arrays (MLAs) and gratings with periods and depths in the scale of submicron have been designed and incorporated on the lighting surface of OLEDs for simultaneous enhancement of light outcoupling efficiency and angular distribution improvement. It is found that the augmentation of light extraction efficiency is mainly attributed to the MLAs, while the gratings can improve the viewing angle by increasing the angular distribution uniformity. A novel approach was proposed by combining photoresist thermal reflow, soft-lithography and plasma treatments on polydimethylsiloxane (PDMS) surfaces synergistically to realize gratings on the wavy surface of MLAs. It has been proved that with the hybrid MLAs/gratings, the external quantum efficiency (EQE) of the OLED can reach up to 22.8%, which increased by 24% compared to that of bare OLED. Moreover, the OLED with the hybrid MLAs/gratings showed an obvious lateral enhancement at wider viewing angle.

Spatially resolved x-ray detection with photonic crystal scintillators

We study the self-collimation phenomenon in photonic crystals (PhC) of wide bandgap materials for ultra-fast and high spatial resolution x-ray detection. We work on various heavy inorganic scintillators: BaF2, GaN, ZnO, CsI:Tl, NaI:Tl, LYSO, WO4 compounds, and plastic scintillators. Conventional scintillator detectors do not rely on a direct detection mechanism; hence, they require intricate design and fabrication processes. We offer a PhC design to observe self-collimation phenomena and overcome the ongoing spatial resolution challenges with these types of materials. We investigate the photonic band diagrams and iso-frequency contours. Fourier transforms based on finite-difference time-domain and frequency domain simulations are done for verifying and analyzing the self-collimation with the selected material. Light extraction efficiency at the PhC–air interface, depending on the truncation distance from the excitation point, is measured. Beam divergence values are calculated at 1 mm propagation distance. The vertical field profiles are obtained to observe the confinement. For the spatial resolution analysis, cross-sectional beam profiles have been examined. Gaussian envelopes are fitted to beam profiles for a consistent data analysis, and full-width-at-half-maximum values are considered. As a result, we theoretically prove and demonstrate the spatially resolved x-ray detection at the sub-micrometer level for a wide range of scintillator materials.

Light extraction efficiency of AlGaN nanowire deep ultraviolet light-emitting diodes on Si with different photonic structures

The low light extraction efficiency (LEE) stemming from the transverse-magnetic dominant emission is one of the major factors limiting the performance of aluminum gallium nitride (AlGaN)-based deep ultraviolet (UV) light-emitting diodes (LEDs) when the light emission wavelengths are close to 200 nm. These wavelengths, nonetheless, are pivotal to applications including sensing and sterilization and are considered human safe. We investigate the LEE of AlGaN/AlN nanowire (NW) deep UV LEDs emitting at 225 nm, with a focus on the top-surface LEE by considering different NW arrangements, typical NW spacings and radii from AlGaN NWs grown by selective area epitaxy, the influence of Si on the LEE in comparison to an Al reflector, and graphene as the top electrode. Our results show that given the selected range of design parameters, the top-surface LEE for honeycomb, square, and hexagonal lattices can be up to around 42% for complete devices on Si with the graphene top electrode; and compared to using an Al reflector, the Si substrate does not reduce LEE considerably. In the end, the light extraction mechanism is discussed by simulating the two-dimensional photonic crystal band structures.

High-Performance Triangular Miniaturized-LEDs for High Current and Power Density Applications

This work proposes an effective electrode length model and reveals for the first time the relationship between this model and the mesa shape effect. On the basis of this model, we demonstrate high-performance triangular miniaturized-LEDs (mini-LEDs) and benchmark to the conventional square, and circular shapes of the same mesa area. Here, we systematically study the impact of shaping in mini-LEDs both theoretically and experimentally, which is fundamentally different than that of the conventional regular-sized LEDs. We find that, at the current level of 200 mA, the triangular mini-LEDs deliver an enhancement of 36.4% in the optical output power and a decrease of 9.6% for the forward voltage compared to the commonly used square ones, and also an enhancement of 24.6% in the optical output power and a decrease of 14.3% for the forward voltage compared to the circular ones. The superior optical performance is proved to result from longer effective n-electrode length in the case of the triangular mini-LEDs, which suppresses the self-heating effect and thus well preserves the internal quantum efficiency, whereas the light extraction efficiency and the heat dissipation for the triangular shape are not significantly increased for such small mesa sizes, unlike conventional broad-area LEDs. Meanwhile, the reduced voltage is revealed to stem from the decreased n-GaN resistance. Different than conventional LEDs, these findings therefore indicate that the effective n-electrode length matters substantially for the miniaturized-LEDs.

FDTD Based Simulation of Light Extraction in OLED using Triangular Band Structure

ABSTRACT In OLED, external light extraction shows very low efficiency due to total internal reflection, metal surface absorption and surface Plasmon coupling. The photonic crystal is a unique platform for controlling or modifying the light propagation and its properties such as transmission and absorption. The band structure of photonic crystal is mainly proposed for suppressing the spontaneous emission of light. In this work, the Finite Difference Time Domain (FDTD) mathematical modelling has been used to analyse the light extraction efficiency in the triangular band structure of OLED displays by measuring the Purcell factor. Due to the rectangular nature of FDTD solver region, it may be necessary to include multiple unit cells in the solver region for the triangular band structure. There is an improvement in the far-field intensity in OLED by optimizing the angular distribution of light through the substrate with the triangular band structure. Hence it can be widely used in ultra-compact optical devices.