Light-emitting Transistors Research Articles

Dressing AgNWs with MXenes Nanosheets: Transparent Printed Electrodes Combining High-Conductivity and Tunable Work Function for High-Performance Opto-Electronics.

High-work function transparent electrodes (HWFTEs) are key for establishing Schottky and Ohmic contacts with n-type and p-type semiconductors, respectively. However, the development of printable materials that combine high transmittance, low sheet resistance, and tunable work function remains an outstanding challenge. This work reports a high-performance HWFTE composed of Ag nanowires enveloped conformally by Ti3C2Tx nanosheets (TA), forming a shell-core network structure. The printed TA HWFTEs display an ultrahigh transmittance (>94%) from the deep-ultraviolet (DUV) to the entire visible spectral region, a low sheet resistance (<15 Ωsq-1), and a tunable work function ranging from 4.7 to 6.0eV. The introduction of additional oxygen terminations on the Ti3C2Tx surface generates positive dipoles, which not only increases the work function of the TA HWFTEs but also elevates the TA/Ga2O3 Schottky barrier, resulting in a high self-powered responsivity of 18mAW-1 in Ga2O3 diode DUV photodetectors, as demonstrated via experimental characterizations and theoretical calculations. Furthermore, the TA HWFTEs-based organic light-emitting transistors exhibit exceptional emission brightness of 5020cd m-2, being four-fold greater than that in Au electrodes-based devices. The innovative nano-structure design, work function tuning, and the revealed mechanisms of electrode-semiconductor contact physics constitute a substantial advancement in high-performance optoelectronic technology.

The New Era of Organic Field-Effect Transistors: Hybrid OECTs, OLEFETs and OFEWs

Advancements in electronic device technology have led to an exponential growth in demand for more efficient and versatile transistors. In this context, organic field-effect transistors (OFETs) have emerged as a promising alternative due to their unique properties and potential for flexible and low-cost applications. However, to overcome some of the inherent limitations of OFETs, the integration of organic materials with other materials and technologies has been proposed, giving rise to a new generation of hybrid devices. In this article, we explore the development and advances of organic field-effect transistors and highlight the growing importance of hybrid devices in this area. In particular, we focus on three types of emerging hybrid devices: organic electrochemical transistors (OECTs), organic light-emitting field-effect transistors (OLEFETs) and organic field-effect waveguides (OFEWs). These devices combine the advantages of organic materials with the unique capabilities of other technologies, opening up new possibilities in fields such as flexible electronics, bioelectronics, or optoelectronics. This article provides an overview of recent advances in the development and applications of hybrid transistors, highlighting their crucial role in the next generation of electronic devices.

Predictive cheminformatics modeling of reorganization energy (RE) for p-type organic semiconductors: Integration of quantitative read-across structure-property relationship (q-RASPR) and stacking regression analysis

Organic semiconductors (OSCs), being light in weight, decomposable, cheap, and flexible, can be an excellent replacement for inorganic semiconductors. Reorganization energy (RE) is an essential parameter that can help determine charge carriers' mobility. Understanding and controlling the reorganization energy (RE) of OSCs is necessary for the design and optimization of organic electronic devices such as optoelectronic devices, organic photovoltaics, organic light-emitting diodes (OLEDs), photodetectors, and organic field-effect transistors (OFETs). The quantitative read-across structure-property relationship (q-RASPR) is an emerging computational methodology that can efficiently predict the material's property using structural and physiochemical features, and similarity measures. This method has also shown an enhancement in the predictivity of the models so developed. The stacking regression methodology uses the aggregates/predictions from the individual models and uses them according to their weights to produce an output in the new model. This study elaborates on the sequential steps for the development of a stacking q-RASPR model for the prediction of reorganization energy (RE) of the p-type organic semiconductors (OSCs) comprising 171 diverse organic structures of acenes, thiophenes, thienoacenes, and some pantalenes moiety as well. The predictions from the individual q-RASPR models developed using different similarity measures were used to perform the final stacking regression. Different machine learning (ML) algorithms were also used to enhance the model quality and predictivity. The model so developed through the stacking regression using support vector machine (SVM) method was of statistically good quality (R2 = 0.735), robustness (Q2LOO = 0.668), and effective predictive ability (Q2F1 = 0.801). The error in the model's predictions is also low compared to the other models developed earlier. This q-RASPR model was also used to predict an external set of 10888 compounds, and it shows an error (MAE) of only 87.95 meV, much lower than that reported earlier. The model developed in this study may be used to predict RE during high throughput screening of OSCs.

Highly emissive white single-molecular material towards organic light-emitting transistors

Highly emissive white single-molecular material towards organic light-emitting transistors

Synthesis and characterization of novel double perovskite K2AgBiBr6

Over the past few years, Lead-free halide double perovskites have attracted a tremendous attention such that it is demonstrated by the power conversion efficiency's sharp increase of over 25 %. It has also stimulated a widespread application of halide metal perovskites in other fields, such as light-emitting diodes, field-effect transistors, detectors, and lasers. Double perovskites have been put forth as an alternative to hybrid lead halide perovskites in the last decade because of their efficiency in doing away with the existing toxicity and instability. It is probably the first attempt, to date, that lead-free halide double perovskite K2AgBiBr6 has been made with a cheap, easy-to-use solution-state reaction method. To determine their structure, single crystal X-ray diffraction and PXRD analysis have been employed. The synthesized K2AgBiBr6 adopts the cubic structure with Fm‾3m symmetry and lattice parameters of a = 6.606 (9) Å at room temperature, according to the diffraction result. Energy dispersive X-ray spectroscopy (EDX), elemental mapping, and scanning electron microscopy (SEM) have all been employed to analyze the morphology and elemental composition. Elements including K, Bi, Ag, and Br have been confirmed to be present in the synthesized sample by the EDX technique. For K2AgBiBr6, the 2.859 eV (indirect) and 3.076 eV (direct) bandgaps have been estimated by employing the UV–Vis absorption spectra. Furthermore, the K2AgBiBr6 double perovskite nanocrystal's thermogravimetric analysis/differential thermal and differential scanning analysis (TG/DTA and DSC) curves at 20–800 °C have been measured. An analysis has been conducted on the mechanism of thermal decomposition of synthesized double perovskite. This work demonstrates great promise for future band gap engineering-based photovoltaic and other optoelectronic applications, and it offers a novel path to obtaining premium K2AgBiBr6 double perovskite.

Direct-Written Silver Electrodes for All-Solution-Processed Low-Voltage Organic Thin Film Transistors Towards Flexible Electronics Applications

Recent progress inprinted electronics has offered the possibility of fabricatingvarious organic-based electronic devices,such as organic light-emitting diodes (OLEDs) and organic thin film transistors (OTFTs).As one of the important deposition methods inprinted electronics, an inkjet printing technique offers the deposition of solution-processable materials onto a variety of substrates using simpler fabrication steps at lower processing temperatures, which is suitable for flexible electronic applications. Despite being the leading choice in OTFT fabrication,the clogging issues that frequently occurred at the printhead nozzle havenot only limitedthe material selection but also restrained the efforts to bring organic electronic devices to the market. Apart from that, although remarkable progress has been made to enhance the performance of the OTFT, the high operating voltage resulting from the low gate capacitance density of the inorganic oxide-based dielectric layer remains a critical limitation that hinders the practical application of the OTFT. Hence, in this paper, we propose a simple solution-based method to develop a low-voltageOTFT. This work utilized a direct-write printing technique to print silver source/drain and gate electrodes incorporated into a bottomgate bottom contact OTFT structure, a spin-coating deposition method to deposit both small molecule TIPS-pentacene organic semiconducting layer and high-kPVA dielectric layer. Notably, the proposed OTFT achieved a micrometre channel length with a saturation mobility of 4.49 × 10-1cm2/Vs, a threshold voltage of -1.5V, an on/off current ratio of 108, and a subthreshold swing of 66.8mV/dec whilethe overall fabrication temperature and operating voltage arekept below 150 °Cand -15 V, respectively.The direct ink writing technology incorporated into the high-kdielectric layer provides a new strategy to fabricate organic-related components,particularly the OFTFs at lower manufacturing cost and temperature towardsflexible and low-operating voltage electronic devices.

Polymer Materials for Optoelectronics and Energy Applications.

This review comprehensively addresses the developments and applications of polymer materials in optoelectronics. Especially, this review introduces how the materials absorb, emit, and transfer charges, including the exciton-vibrational coupling, nonradiative and radiative processes, Förster Resonance Energy Transfer (FRET), and energy dynamics. Furthermore, it outlines charge trapping and recombination in the materials and draws the corresponding practical implications. The following section focuses on the practical application of organic materials in optoelectronics devices and highlights the detailed structure, operational principle, and performance metrics of organic photovoltaic cells (OPVs), organic light-emitting diodes (OLEDs), organic photodetectors, and organic transistors in detail. Finally, this study underscores the transformative impact of organic materials on the evolution of optoelectronics, providing a comprehensive understanding of their properties, mechanisms, and diverse applications that contribute to advancing innovative technologies in the field.

A Fluorescent Conjugated Polar Polymer for Probing Charge Injection in Multilayer Organic Light-Emitting Transistors.

Ambipolar organic light-emitting transistors (OLETs) are extremely appealing devices for applications from sensing to communication and display realization due to their inherent capability of coupling switching and light-emitting features. However, their limited external quantum efficiency (EQE) and brightness under ambipolar bias conditions hamper the progress of OLET technology. In this context, it was recently demonstrated in multi-stacked devices that the engineering of the interface between the topmost electron-transporting organic semiconductor (e-OS) and the emission layer (EML) is crucial in optimizing the recombination of the minority charges (i.e., electrons) and to enhance EQE and brightness. Here, we introduce a new light-emitting conjugated polar polymer (CPP) in a multi-stacked OLET to improve the electron injection from e-OS to EML and to study, simultaneously, electroluminescence-related processes such as exciton formation and quenching processes. Interestingly, we observed that the highly polar groups present in the conjugate polymer induced polarization-related relevant charge-trapping phenomena with consequent modulation of the entire electrostatic field distribution and unexpected optoelectronic features. In view of the extensive use of CPPs in OLETs, the use of multifunctional CPPs for probing photophysical processes at the functional interfaces in stacked devices may speed up the improvement of the light-emission properties in OLETs.

Covalent Bond Torsion-Enabled Unique Crystal-Phase Transformation of an Organic Semiconductor for Multicolor Light-Emitting Transistors.

High-mobility and color-tunable highly emissive organic semiconductors (OSCs) are highly promising for various optoelectronic device applications and novel structure-property relationship investigations. However, such OSCs have never been reported because of the great trade-off between mobility, emission color, and emission efficiency. Here, we report a novel strategy of molecular conformation-induced unique crystalline polymorphism to realize the high mobility and color-tunable high emission in a novel OSC, 2,7-di(anthracen-2-yl) naphthalene (2,7-DAN). Interestingly, 2,7-DAN has unique crystalline polymorphism, which has an almost identical packing motif but slightly different molecular conformation enabled by the small bond rotation angle variation between anthracene and naphthalene units. More remarkably, the subtle covalent bond rotation angle change leads to a big change in color emission (from blue to green) but does not significantly modify the mobility and emission efficiency. The carrier mobility of 2,7-DAN crystals can reach up to a reliable 17 cm2 V-1 s-1, which is rare for the reported high-mobility OSCs. Based on the unique phenomenon, high-performance light-emitting transistors with blue to green emission are simultaneously demonstrated in an OSC crystal. These results open a new way for designing emerging multifunctional organic semiconductors toward next-generation advanced molecular (atomic)-scale optoelectronics devices.

Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity.

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.

Effect of Long-Lived Ground-State Diradicaloids on the Photophysics of Semiladder Thiophene-Based Polymer Aggregates for Organic Light-Emitting Transistor Applications

Effect of Long-Lived Ground-State Diradicaloids on the Photophysics of Semiladder Thiophene-Based Polymer Aggregates for Organic Light-Emitting Transistor Applications

Shape-Dependent Optical Waveguides and Low-Threshold Lasers from Polymorphic Two-Dimensional Organic Single Crystals.

Organic single crystals (OSCs) with uniform morphologies and highly ordered molecular aggregations are promising for high-performance optoelectronic devices, such as organic solid-state lasers (OSSLs), organic light-emitting transistors (OLETs), and organic light-emitting diodes (OLEDs). However, manipulating OSC morphologies and aggregation is challenging. In this study, we synthesized two-dimensional (2D) OSCs of 4,4'-bis[(N-carbazole)styryl]biphenyl (BSBCz) in hexagonal and parallelogram microplate (H-MP and P-MP) forms. Both types exhibit H-aggregation in the 2D plate plane but with different molecular transition dipole moment (TDM) orientations. This leads to different photon coupling modes with H-MP and P-MP microcavities. H-MPs enable isotropic 2D-waveguiding, forming whispering gallery mode (WGM) resonators, while P-MPs create unidirectional waveguiding, forming Fabry-Pérot mode (FP) resonators. These resonators can generate low-threshold laser emissions at 467 and 473 nm, respectively, and exhibit superior lasing stability with a half-life exceeding 2 h. Our BSBCz microplate OSCs are attractive candidates to combine controlled organic microcavities with photon transporting for realizing future integrated optoelectronic devices.

Li Promoting Long Afterglow Organic Light-Emitting Transistor for Memory Optocoupler Module.

The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human brain by integrating synaptic devices. Within this context, improving the functionality of synaptic transistors to increase information processing density in neuromorphic chips is a major challenge in this field. In this article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness of 7000cdm-2 under low operational voltages of 10V is presented. The postsynaptic current of 0.1mA operating as a built-in threshold switch is implemented as a firing point in these devices. The setting-condition-triggered long afterglow is employed to drive the photoisomerization process of photochromic molecules that mimic neurotransmitter transfer in the human brain for realizing a key memory rule, that is, the transition from long-term memory to permanent memory. The combination of setting-condition-triggered long afterglow with photodiode amplifiers is also processed to emulate the human responding action after the setting-training process. Overall, the successful integration in neuromorphic computing comprising stimulus judgment, photon emission, transition, and encoding, to emulate the complicated decision tree of the human brain is demonstrated.

Estimation of the Charge Mobility of Phenanthroline derivatives with the view of Density Functional Theory: Reorganization Energy and Charge Transfer Integral are in play

Molecular arrangement and noncovalent interactions in organic materials greatly influence the charge mobility in organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), and organic field-effect transistors (OFETs). In the light of the this argument, we examined the electronic properties of the phenanthroline derivatives by considering the charge mobility with the combination of density functional theory and Marcus Charge Transfer Theory. The drift electron mobility of the molecule 1 and 2 were determined to 21.13 cm2 V-1 s-1 and 18.00 cm2 V-1 s-1, respectively through J type π⋯π stacking interactions created by small perpendicular distances between the adjacent rings. The effective charge pathways of the molecules were generated with strong π⋯π stacking interactions consolidated by noncovalent interactions in their solid phases. The electron reorganization energy for both molecules were determined smaller than that of holes which means they have n-type semiconductor properties. The charge transfer integrals were calculated with the optimization of molecules’ dimer configurations that the theoretical results demonstrate the charge transfer integral depends on the distance between the stacking rings. High charge transfer integral and small reorganization energy give the high charge mobility fort he semiconductor molecules. Beside the mobility, energy band gap, ionization potential, electron and hole injection barriers of the molecules were interpreted to further understand their electronic properties. Due to the small LUMO values which provide n-type molecule and small electron injection barrier. From the our work both molecules can be effective n type organic semiconductor devices with the high mobility and can be modified for more efficient charge transport in phenanthroline derivatives.

High Mobility Emissive Excimer Organic Semiconductor Towards Color-Tunable Light-Emitting Transistors.

Organic light-emitting transistors (OLETs) are highly integrated and minimized optoelectronic devices with significant potential superiority in smart displays and optical communications. To realize these various applications, it is urgently needed for color-tunable emission in OLETs, but remains a great challenge as a result of the difficulty for designing organic semiconductors simultaneously integrating high carrier mobility, strong solid-state emission, and the ability for potential tunable colors. Herein, a high mobility emissive excimer organic semiconductor, 2,7-di(2-anthryl)-9H-fluorene (2,7-DAF) was reasonably designed by introducing a rotatable carbon-carbon single bond connecting two anthracene groups at the 2,7-sites of fluorene, and the small torsion angles simultaneously guarantee effective conjugation and suppress fluorescence quenching. Indeed, the unique stable dimer arrangement and herringbone packing mode of 2,7-DAF single crystal enables its superior integrated optoelectronic properties with high carrier mobility of 2.16 cm2 ⋅ V-1 ⋅ s-1 , and strong excimer emission with absolute photoluminescence quantum yield (PLQY) of 47.4 %. Furthermore, the voltage-dependent electrically induced color-tunable emission from orange to blue was also demonstrated for an individual 2,7-DAF single crystal based OLETs for the first time. This work opens the door for a new class of high mobility emissive excimer organic semiconductors, and provides a good platform for the study of color-tunable OLETs.

A Holistic Review of C = C Crosslinkable Conjugated Molecules in Solution-Processed Organic Electronics: Insights into Stability, Processibility, and Mechanical Properties.

Solution-processable organic conjugated molecules (OCMs) consist of a series of aromatic units linked by σ-bonds, which present a relatively freedom intramolecular motion and intermolecular re-arrangement under external stimulation. The cross-linked strategy provides an effective platform to obtain OCMs network, which allows for outstanding optoelectronic, excellent physicochemical properties, and substantial improvement in device fabrication. An unsaturated double carbon-carbon bond (C = C) is universal segment to construct crosslinkable OCMs. In this review, the authors will set C = C cross-linkable units as an example to summarize the development of cross-linkable OCMs for solution-processable optoelectronic applications. First, this review provides a comprehensive overview of the distinctive chemical, physical, and optoelectronic properties arising from the cross-linking strategies employed in OCMs. Second, the methods for probing the C = C cross-linking reaction are also emphasized based on the perturbations of chemical structure and physicochemical property. Third, a series of model C = C cross-linkable units, including styrene, trifluoroethylene, and unsaturated acid ester, are further discussed to design and prepare novel OCMs. Furthermore, a concise overview of the optoelectronic applications associated with this approach is presented, including light-emitting diodes (LEDs), solar cells (SCs), and field-effect transistors (FETs). Lastly, the authors offer a concluding perspective and outlook for the improvement of OCMs and their optoelectronic application via the cross-linking strategy.

Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors.

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential in optoelectronic applications due to their direct band gap and exceptional quantum yield. However, TMD-based light-emitting devices have shown low external quantum efficiencies as imbalanced free carrier injection often leads to the formation of non-radiative charged excitons, limiting practical applications. Here, electrically confined electroluminescence (EL) of neutral excitons in tungsten diselenide (WSe2) light-emitting transistors (LETs) based on the van der Waals heterostructure is demonstrated. The WSe2 channel is locally doped to simultaneously inject electrons and holes to the 1D region by a local graphene gate. At balanced concentrations of injected electrons and holes, the WSe2 LETs exhibit strong EL with a high external quantum efficiency (EQE) of ≈8.2 % at room temperature. These experimental and theoretical results consistently show that the enhanced EQE could be attributed to dominant exciton emission confined at the 1D region while expelling charged excitons from the active area by precise control of external electric fields. This work shows a promising approach to enhancing the EQE of 2D light-emitting transistors and modulating the recombination of exciton complexes for excitonic devices.

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors.

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Improving Electron Injection of Organic Light-Emitting Transistors via Interface Layer Design

Ambipolar transport is crucial for constructing high performance organic light-emitting transistors (OLETs), but the ambipolar feature is usually not be exhibited due to the ineffective electron injection especially in symmetric...

Enhanced light-emitting transistors utilizing multi-dimensional CsPbBr3 perovskite films and PVP-modified ZTO semiconductor layers

The introduction of the PVP modification layer enables the perovskite light-emitting transistor to operate stably and achieve surface emission.