Light-emitting Diode Structure Research Articles

Spatially Resolved Functional Group Analysis of OLED Materials Using EELS and ToF-SIMS.

Electron energy-loss spectroscopy (EELS) is widely used in analyzing the electronic structure of inorganic materials at high spatial resolution. In this study, we use a monochromator to improve the energy resolution, allowing us to analyze the electronic structure of organic light-emitting diode (OLED) materials with greater precision. This study demonstrates the use of the energy-loss near-edge structure to map the nitrogen content of organic molecules and identify the distinct bonding characteristics of aromatic carbon and pyridinic nitrogen. Furthermore, we integrate EELS with time-of-flight secondary ion mass spectrometry for molecular mapping of three different bilayers composed of OLED materials. This approach allows us to successfully map functional groups in the by-layer OLED and measure the thickness of two OLED layers. This study introduces spatially resolved functional group analysis using electron beam spectroscopy and contributes to the development of methods for complete nanoscale analysis of organic multilayer architectures.

Impact of Crystal Orientation on Modulation Bandwidth: Towards GaN LED-Based High-Speed Visible Light Communication

Light-emitting diodes (LEDs) with high modulation bandwidth are required for high-speed visible light communication applications. Crystal orientation in the GaN LED structure plays a key factor in its modulation bandwidth as the recombination lifetime is highly dependent on crystal orientation owing to the Quantum-Confined Stark Effect (QCSE). In this study, six different crystal orientation multi-quantum well (MQW) GaN LEDs are simulated to understand the impact of heterostructure orientation on modulation bandwidth, radiative recombination rates, and emission intensity. The results of this study demonstrate that semi-polar 101¯3¯ MQW LEDs provide the highest bandwidth in the current density range of 9–20 kA/cm2 compared to the other five orientations. For instance, the semi-polar 101¯3¯-based LED offers a modulation bandwidth of 912.7 MHz at 20 kA/cm2 current density. These results suggest that the semi-polar 101¯3¯ orientation-based LED has the potential to support a high-speed visible light communication system.

Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes

This article is aimed at understanding of the complex design of metalorganic chemical vapour deposition ‐grown InGaN‐based red light‐emitting diode (LED) structure. The contribution of different elements of red LED structure to the stress distribution and threading dislocation density (TDD) evolution is theoretically investigated. For this purpose a self‐consistent modeling of the structure growth process is used, taking into account stress‐modulated indium incorporation, mismatch stress relaxation by threading dislocations and V‐pits, and nucleation of new threading dislocations. The simulation results, consisting of composition, stress, and TDD profiles, are then utilized for modeling of device operation, which allows to analyze contribution of different elements to the heterostructure operation.

Non-conventional exciplex system by leveraging zero-radius of intramolecular energy transfer mechanism: Seamless integration of p-host and fluorescent dopant for highly efficient OLEDs

A multi-component emissive layer (EML) composed of a mixture of p- and n-type hosts and a dopant is a widely used structure in organic light-emitting diodes (OLEDs) due to its high efficiency and operational stability. However, multi-component EML devices impose limitations such as difficulty in accurately controlling the mixing ratio and profiles in the manufacturing process, high costs, and complexity in the photophysical properties of the components.In this paper, a p-type host fused with a blue fluorescent dopant, 5,9-di([1,1′-biphenyl]-2-yl)-2′-(9H-carbazole-9-yl)3,7-dimethyl-5,5a,5a1,9,9a,16a-hexahydrospiro[5,9-diaza-16b-boraindeno[2,1-b]naphtho[1,2,3-fg]anthracene-11,9′-fluorene] (DABNA-Spiro-Cz), was designed and successfully synthesized to construct a novel EML structure. Completely fused within DABNA-Spiro-Cz, the p-type host and blue fluorescent dopant can independently perform their respective roles. An exciplex is formed between n-type host and p-type host unit in the DABNA-Spiro-Cz molecule and its energy is effectively transferred to the blue fluorescent dopant unit in DABNA-Spiro-Cz. In other words, a degree of freedom is earned from a conventional 3-component exciplex-dopant system. A high external quantum efficiency of 14.9 % was achieved thanks to “zero-radius of intramolecular energy transfer in exciplex (ZETPLEX)” system, which is completely non-conventional and novel. We believe the ZETPLEX mechanism opens a new era of designing emissive materials and paves a new way of constructing a novel EML and device architecture for highly efficient OLEDs.

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar 101¯1 QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm2/s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Investigation of optical polarization characteristics of ultraviolet-C AlGaN multiple quantum wells by angle-resolved cathodoluminescence

AlGaN-based ultraviolet-C (UV-C) light-emitting diodes (LEDs) face challenges related to their extremely low external quantum efficiency, which is predominantly attributed to the remarkably inadequate transverse magnetic (TM) light extraction efficiency (LEE). In this study, we employ angle-resolved cathodoluminescence (ARCL) spectroscopy to assess the optical polarization of (0001)-oriented AlGaN multiple quantum well (MQW) structures in UV-C LEDs, in conjunction with a focused ion beam and scanning electron microscopy (FIB/SEM) system to etch samples with various inclination angles (θ) of sidewall. This technique effectively distinguishes the spatial distribution of TM- and transverse electric (TE)-polarized photons contributing to the luminescence of the MQW structure. CL spectroscopy confirms that UV-C LEDs with a θ of 35° exhibit the highest CL signal compared to samples with other θ. Furthermore, we establish a model using finite difference time domain (FDTD) simulation to validate the mechanism of the outcomes. The complementary contribution of TM and TE photons at different specific angles are distinguished by ARCL and confirmed by simulation. At angles near the sidewall, the CL is dominated by the TM photons, which mainly contribute to the increased LEE and the decreased degree of polarization (DOP) to make the spatial distribution of CL more uniform. Additionally, this method allows us to analyze the polarization of light without the need for polarizers, enabling the differentiation of TE and TM modes. This distinction provides flexibility for selecting different emission mode based on various application requirements. The presented approach not only opens up new opportunities for enhanced UV-C light extraction but also provides valuable insights for future endeavors in device fabrication and epitaxial film growth.

Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

In this work, we propose a novel structure for nonpolar (10–10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al0.2Ga0.8N/GaN superlattice structure as the hole injection layer. The main objective is to increase the hole concentration and facilitate vertical hole injection. The nonpolar InGaN-based LED lacks polarization along the growth plane (10–10), but the lateral direction along [0001] exhibits strong polarization. Therefore, the Al0.2Ga0.8N/GaN superlattice structure, which is periodic along the [0001] direction, induces net polarization charges at the GaN/Al0.2Ga0.8N interface, resulting in increased ionization rates of the acceptors. Additionally, the high-density two-dimensional hole gases formed at the Al0.2Ga0.8N/GaN interfaces along the [0001] direction can efficiently inject vertically into the quantum wells. Based on the numerical simulation results, the proposed LED structure offers improved electrical characteristics, effective hole injection, and enhanced optical performance compared to the nonpolar LED with conventional p-type doping structure.

Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu

Gallium nitride co-doped with magnesium and europium shows great potential for active layers in red light emitting diode structures due to strong and sharp luminescence emission around 620 nm. In this work, sharp and intense Eu3+ luminescence lines from the excited states of the 5DJ (J = 0, 1) multiplets to the ground states of the 7FJ (J = 0, 1, 2) multiplets have been analyzed using a C2v crystal-field equivalent operator Hamiltonian. A model of Eu centers with the C2v symmetry has been proposed to be an Eu3+ complex accompanied by either a pair of nitrogen and gallium vacancies (VN-VGa) or a pair consisting of a nitrogen vacancy and magnesium impurity (VN-MgGa) in the vicinity of the Eu ion based on the crystal-field analysis, the selection rules and the observed polarization of the Eu3+ luminescence lines. Energy transfer from the host to the Eu ions under band-to-band excitation occurs through electron-hole recombination between VN with the electron-like state and VGa or MgGa with the hole-like state; these may be associated with the shallow-trapped or deep-trapped states, respectively, proposed as the energy transfer mechanism in previous literature.

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.

While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.

Investigation into the Effects of Cross-Sectional Shape and Size on the Light-Extraction Efficiency of GaN-Based Blue Nanorod Light-Emitting Diode Structures

We investigated the effect of cross-sectional shape and size on the light-extraction efficiency (LEE) of GaN-based blue nanorod light-emitting diode (LED) structures using numerical simulations based on finite-difference time-domain methods. For accurate determination, the LEE and far-field pattern (FFP) were evaluated by averaging them over emission spectra, polarization, and source positions inside the nanorod. The LEE decreased as rod size increased, owing to the nanorods’ increased ratio of cross-sectional area to sidewall area. We compared circular, square, triangular, and hexagonal cross-sectional shapes in this study. To date, nanorod LEDs with circular cross sections have been mainly demonstrated experimentally. However, circular shapes were found to show the lowest LEE, which is attributed to the coupling with whispering-gallery modes. For the total emission of the nanorod, the triangular cross section exhibited the highest LEE. When the angular dependence of the LEE was calculated using the FFP simulation results, the triangular and hexagonal shapes showed relatively high LEEs for direction emission. The simulation results presented in this study are expected to be useful in designing high-efficiency nanorod LED structures with optimum nanorod shape and dimensions.

Hollow Microcavity Electrode for Enhancing Light Extraction.

Luminous efficiency is a pivotal factor for assessing the performance of optoelectronic devices, wherein light loss caused by diverse factors is harvested and converted into the radiative mode. In this study, we demonstrate a nanoscale vacuum photonic crystal layer (nVPCL) for light extraction enhancement. A corrugated semi-transparent electrode incorporating a periodic hollow-structure array was designed through a simulation that utilizes finite-difference time-domain computational analysis. The corrugated profile, stemming from the periodic hollow structure, was fabricated using laser interference lithography, which allows the precise engineering of various geometrical parameters by controlling the process conditions. The semi-transparent electrode consisted of a 15 nm thick Ag film, which acted as the exit mirror and induced microcavity resonance. When applied to a conventional green organic light-emitting diode (OLED) structure, the optimized nVPCL-integrated device demonstrated a 21.5% enhancement in external quantum efficiency compared to the reference device. Further, the full width at half maximum exhibited a 27.5% reduction compared to that of the reference device, demonstrating improved color purity. This study presents a novel approach by applying a hybrid thin film electrode design to optoelectronic devices to enhance optical efficiency and color purity.

Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes

The emergence of III‐nitride semiconductors has established a solid foundation for the development of high‐efficiency optoelectronic devices, particularly for light‐emitting diodes (LEDs). However, the efficiency improvement for LEDs is typically restricted by hole injection and optical loss. The incorporation of tunnel junction (TJ) into structure of LEDs has arisen as a promising solution to overcome these challenges while providing additional features, such as electrical contacts, current confinement, and novel controllability in band engineering. Herein, recent progress in the development of III‐nitride TJ LEDs is reviewed. It is started with an explanation of the working principles of TJ and several approaches for enhancing the tunneling probability of TJ are discussed. Subsequently, the most popular techniques for TJ fabrication are summarized and critical issues involved in these processes are discussed. Moreover, applications of TJ in UV LEDs, cascaded LEDs, and micro‐LEDs are highlighted. Finally, an outlook on potential prospects of TJ for the development of high‐performance LEDs is presented.

CaO:Tb<sup>3+ </sup> green-emitting phosphor for white light-emitted diode-phosphor applications: the improvement of light output intensity

The use of CaO:Tb3+ with light green emission on for improvement of both luminescent output and chromatic fidelity of the white light emitted from a light-emitting diode (LED). The CaO:Tb3+ is combined with the yellow-emitting phosphor of YAG:Ce3+ to provide sufficient colored spectral proportion for the white light generation, enhancing the color performance. The phosphor combination is utilized for the three most applied LED structures: conformal, in-cup, and remote phosphor structures. The changes in optical properties of these three LEDs are monitored with adjustments in the proportion of CaO:Tb3+. The higher proportion of the green phosphor results in higher scattering efficiency in all structures, offering better color coordination and stronger luminous flux. The color quality scale is somehow reduced when CaO:Tb3+ concentration is more than a certain level. Therefore, depending on the phosphor configuration of the white light-emitting diode (WLED), the concentration of CaO:Tb3+ should be modified to achieve a good color rendition with improved color consistency and luminous properties.

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

We investigated the efficiency droop phenomenon in blue and green GaN-based light-emitting diodes (LEDs) and laser diodes (LDs), which poses a significant challenge in high-power LEDs and is characterized by a reduction in external quantum efficiency at higher injection currents. Utilizing identical epi-structures for blue and green LEDs and LDs, with variations only in indium composition, our experiments revealed a gradual blue shift in the emission wavelengths as the injection current increased. Notably, the blue LED demonstrated a smaller shift compared to the green LED. In addition, the full width at half maximum of emission spectra increased with increasing injection current density, indicative of efficiency droop. Significantly, LDs consistently exhibited lower junction temperatures despite operating at higher current densities. This is attributed to the enhanced heat dissipation capability of the ridge waveguide LD structure, which results in a narrower emission spectrum and reduced efficiency droop compared to mesa LED structures. These outcomes highlight the efficiency of the ridge waveguide LD structure in heat dissipation from the active layer, offering crucial insights for the advancement of high-power light-emitting devices.

Properties of AlxGa1-xAs grown from a mixed Ga-Bi melt.

Thick smoothly graded AlxGa1-xAs layers (50-100µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1-xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga-Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1-xAs layers, it is expedient to use Ga-Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1-xAs layers revealed that the growth of AlxGa1-xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

Eco-friendly solution-processed narrowband OLEDs using non-halogenated aliphatic solvent systems

In general, fabricating multilayer structures in solution-processed organic light-emitting diodes (OLEDs) presents challenges owing to the potential degradation of the initial film during subsequent processing steps. Furthermore, these devices typically require aromatic and halogenated solvents recognized for their adverse effects on human health and their harmful environmental impact. In this study, we successfully synthesized a solution-processable multi-resonance thermally activated delayed fluorescence (MR-TADF) emitter by introducing tert-butyl carbazolyl dendron, which exhibits excellent solubility. In our approach, we fabricated a multilayer OLED for solution processing utilizing eco-friendly, non-halogenated aliphatic solvents, with each layer in the devices developed utilizing water, cyclohexanone, and ethyl acetate for the hole injection layer, hole transport layer, and emitting layer, respectively. The resulting eco-friendly solution-processed OLED achieved a maximum external quantum efficiency (EQEmax) of 14.0 % and a narrow bandwidth of 30 nm. Furthermore, utilizing an additional TADF sensitizer led to a remarkable EQEmax enhancement of over 15 % and a substantial improvement in efficiency roll-off. Thus, the eco-friendly device fabrication strategy employed here opens novel avenues for diverse research in organic semiconductor devices that must be fabricated with solution processes in the future.

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al2O3 on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al2O3 on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.

Temperature Distribution Research on Liquid Packaging Structure of Deep UV LEDs

By showing a packaged device model with 2 × 2 chips, the effects of packaging material, device height, chip spacing, thermal conductivity, and viscosity of silicone oil on temperature distribution of deep ultraviolet (UV) light-emitting diodes (LEDs) were investigated by finite element simulation. The results showed that similar temperature distributions in the horizontal and vertical directions were obtained using different packaging materials including gas, solid, and liquid. The lowest maximum temperature (131.7°C) was obtained with liquid packaging compared to the gas packaging (140.8°C) and solid packing (132.5°C). Accompanied by increasing the device height, the maximum temperature of the liquid packaging structure revealed a more significant drop compared to solid packaging. However, that of gas packaging exhibited a rise and saturation. Larger chip spacing and higher thermal conductivity of silicone oil will dramatically reduce the maximum temperature of the liquid packaging device, and a lower maximum temperature and more uniform temperature distribution were obtained by using a lower viscosity packaging material. Therefore, considering the feasibility of the device process, appropriate liquid packaging structures can be optimized, and the maximum temperature of the liquid packaging structure of 102.8°C has been achieved. Liquid packaging may have a certain impact on the reliability of device sealing due to the current immature technology. For high-power light sources, there may also be a certain impact on their lifespan.

Advanced Design of a III‐Nitride Light‐Emitting Diode via Machine Learning

AbstractGallium nitride (GaN)‐based light‐emitting diodes (LEDs) have obtained great market success in the past 20 years. However, the traditional research paradigm, i.e., experimental trial‐and‐error method, no longer adapts to the industry development. In this work, an efficient approach is demonstrated to design and optimize GaN‐based LED structures via machine learning (ML). By using the dataset of GaN‐based LED structures over the past decade to train four typical ML models, it is found that the convolutional neural network (CNN) provides the most accurate prediction, with a root mean square error (RMSE) of 1.03% for internal quantum efficiency (IQE) and 11.98 W cm−2 for light output power density (LOPD). Based on the CNN model, 1) the feature importance analysis is adopted to reveal the critical features for LED performance; 2) the predicted trends of IQE and LOPD match well with the physical mechanism, being consistent with the experimental and simulation results; and 3) a high‐throughput screening is demonstrated to predict the properties of over 20 000 structures within seconds to obtain high efficiency LED structures. This ML‐based LED design method enables direct guiding of the LED structure optimization in terms of key parameter selection during manufacturing and greatly accelerates the development cycle of GaN‐based LEDs.

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence.

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.