Layer Transfer Research Articles

Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550 nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques—nanomembrane transfer printing and macro-transfer printing—are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy and transmission electron microscopy exhibits a high-quality, defect-free interface. Current–voltage (IV) measurements and capacitance–voltage analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1.55 μm, highlighting the presence of an active interface.

Impacts of building modifications on the turbulent flow and heat transfer in urban surface boundary layers

This study examines turbulent airflow and upward heat transport in real urban environments using a building-resolving large-eddy simulation model to understand the characteristics of turbulent airflow and upward heat transport when geometrical distributions of buildings are modified. The target areas were two real urban districts within Osaka City, Japan, having different morphological features. In the numerical experiments, the initial condition was set to a neutral condition in which temperature is uniformly distributed vertically, and buildings emitted heat at a constant rate. The results in the two districts indicated that the features of turbulence and heat transport distinctly differed with different building arrangement. Specifically, taller buildings significantly decelerated airflows and induced warming behind buildings. More high-rise buildings (which resulted in a larger building variability) in a district with a larger building density caused a large heat flux and warming at higher levels. The sensitivity experiments in which a density and height variability of buildings were modified showed that a building density at higher levels and a building height variability significantly influenced warming at upper levels. An increased building height variability weakened wind speed and disturbed horizontal heat advection, whereas a large building density caused numerous heat sources.

Atomic Spalling of a van der Waals Nanomembrane.

ConspectusThe vertical integration of van der Waals nanomembranes (vdW NMs), composed of two-dimensional (2D) layered materials and three-dimensional (3D) freestanding films with vdW surfaces, opens new avenues for exploring novel physical phenomena and offers a promising pathway for prototyping ultrathin, superior-performance electronic and optoelectronic applications with unique functionalities. Achieving the desired functionality through vdW integration necessitates the production of high-quality individual vdW NMs, which is a fundamental prerequisite. A profound understanding of the synthetic strategies for vdW NMs, along with their fundamental working principles, is crucial in guiding the experimental design toward 3D integrated heterostructures. The foremost synthetic challenges in fabricating high-quality vdW NMs are achieving exact control over thickness and ensuring surface planarity on the atomic scale. Despite the development of numerous chemical and mechanical approaches to tackle these issues, an all-encompassing solution has yet to be realized. To address these challenges, we have developed advanced spalling techniques, specifically known as atomic spalling or 2D material-based layer transfer, which emerge as a promising technology for achieving both atomically precise thickness-engineered and atomically smooth vdW NMs. These techniques involve engineering the interfacial fracture toughness and strain energy in the vdW system, allowing for precise control over the initiation and the propagation of cracks within the vdW material based on controlled spalling theory.In this Account, we summarize our recent advancements in the atomic precision spalling technique for the preparation of vdW NMs and their applications. We begin by introducing the fundamentals of advanced spalling techniques, which are based on spalling mode fracture in bilayer systems. Following this, we succinctly describe the preparation methods for source materials for vdW NMs, with a primary focus on chemical synthesis approaches. We then delve into the working principles underlying our recent contributions to advanced spalling techniques, providing insights into how this method attains unprecedented atomic-precision control compared to other fabrication methods with a particular emphasis on tuning the interface between the stressor and the vdW system. Subsequently, we highlight cutting-edge applications based on vdW heterostructures, which combine our spalled vdW NMs. Finally, we discuss the current challenges and future directions for advanced spalling techniques, underscoring their potential to be established as a robust methodology for the preparation of high-quality vdW NMs. Our advanced spalling strategy not only ensures the reliable production of vdW NMs with exceptional control over thickness and atomic-level flatness but also provides a robust theoretical framework essential for producing high-quality vdW NMs.

Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors.

The experimental demonstration of a p-type 2D WSe2 transistor with a ferroelectric perovskite BaTiO3 gate oxide is presented. The 30 nm thick BaTiO3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe2/BaTiO3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.

Study of hybrid nanofluid flow in a porous medium over an exponentially stretching sheet under Joule heating and thermal radiation: Finite difference

The significant purpose of present investigation of the behavior of a nanofluid's in magneto-hydrodynamics (MHD), mass transfer, Joule heating, and boundary layer transfer characteristics over an exponentially stretching sheet in a porous medium and thermal radiation effects. The article's goal is to look at the fluid flow and heat transmission characteristics from a sheet of hybrid nanoparticles. The partial differential equations (PDEs) that were derived for the mathematical model were converted using the proper similarity transformation into ordinary differential equations (ODEs). The hybrid nanofluid composed of 97 % of ethyl glycol (EG) and the volume concentration of Magnetite (Fe3O4) and Copper(Cu) are ranging from 0.5 % to 2.5 % both respectively. The effects of thermal radiation, stretching rate, Joule heating, porous medium permeability, and nanoparticle volume fraction on the flow and heat transmission properties are investigated by numerical simulations using the finite difference method (FDM). The analysis reveals that the inclusion of nanofluids enhance the thermal conductivity and enhance the heat transfer rate. Additionally, the influence of variable viscosity on the flow behavior and thermal characteristics are examined graphically. The effects of variable viscosity and thermal conductivity are examined, as it has significance in optimizing system under various thermal and magnetic effects. This study offers a pathway to develop more efficient thermal management solutions, by contributing to technological advancement and energy saving. The key findings of present study reveal that the temperature profile rises significantly due to Joule heating effects. The Nusselt number reveal an improvement of about 12 % when the volume fraction of nano particles is increased by 1–4 % indicating the enhancement in heat transfer efficiency. Similarly, the velocity profile was influenced by porous medium permeability as 11 % increase in porosity result a 18 % decrease in velocity profile.By using parametric research, the role of physical parameters in determining the local skin-friction coefficient, temperature, nanoparticle volume percentage, and longitudinal velocity profiles, local Nusselt number, and local Sherwood number are thoroughly examined. A graphic representation of the velocity, temperature, and concentration distribution findings is presented.

A novel dual functional gradient Zn(O,S)/Mg electron-selective contact for dopant‐free silicon solar cells with efficiencies approaching 21 %

Dopant-free carrier-selective contacts have the potential to mitigate or eliminate parasitic absorption, auger recombination losses, etc. Therefore, the vigorous development of dopant-free carrier-selective contact materials is an important way to enhance the performance of crystalline silicon (c-Si) photovoltaics. This study presents the concept of magnetron sputtering gradient deposited zinc oxide (Gd-Zn(O,S)) combined with a low work function magnesium metal layer. Subsequently, the Gd-Zn(O,S)/Mg bifunctional layer was further investigated and optimised to determine its suitability as a contact layer for electron transfer in c-Si solar cells. This strategy simultaneously enables a good passivation and a low contact resistance. The c-Si(n)/a-Si:H(i)/Gd-Zn(O,S)/Mg devices are constructed and achieved an optimal contact recombination current density (J0) of approximately 1.51 fA cm−2, along with a minimum ρc of approximately 35.89 mΩ.cm2. As a consequence, the power conversion efficiency of a prototype silicon heterojunction solar cell is 20.92 %. This study demonstrates that the strategy of replacing the a-Si:H(n) electron transport layer with Gd-Zn(O,S) is an effective approach for improving the SHJ cell. This study also provides new perspectives for designing novel dopant-free carrier-selective contact structures.

Greenhouse Gas Emissions from a 20-Year-Old Restored Peatland

Peatlands are ecosystems with unique hydrological and ecological properties that serve as critical carbon reservoirs, helping facilitate the reduction of greenhouse gases (GHG). In Canada, the peat industry uses vacuum harvesting to extract peat for horticultural use. This disturbs the natural ecosystem, increasing CO2 and decreasing CH4 emissions due to complete removal of surface vegetation and lowering of the water table. Following years of extraction, if these peatlands are not properly restored, GHG emissions will increase, negatively impacting the climate. The moss layer transfer technique (MLTT) is the primary method for restoring peatlands in Canada. The MLTT allows peatlands to regain their natural ecosystem function and to reaccumulate peat. This is done by revegetation of key species including sphagnum moss, and rewetting of the peatland through the blockage of drainage ditches. My research project investigates a peatland in Pointe-Lebel, Quebec restored in 2004 using MLTT following vacuum extraction. I used the closed chamber method to measure the CO2 and CH4 exchanges at the plant community scale and three repetitions of each of moss, shrubs, and cotton grass communities were followed throughout the summer. Wells at each collar provided the water table depth; a controlling variable for GHG fluxes. I conducted a vegetation survey at peak plant productivity to characterize the proportions of the plant communities and to allow chamber measurements of GHG to be scaled by the contribution of each plant community. If successful, a restored peatland will be a net sink of carbon. Preliminary data analysis at this 20-year-old restored site indicates a net CO2 sink during the summer of 2024. My data also suggests that the site is a small source of CH4. The results from my project will aid in advancing research on peatlands, stressing the importance of taking the proper steps towards restoration.

Two-phase magnetohydrodynamic blood flow through curved porous artery

Blood arteries are important part of our cardiovascular system. A comprehensive study of shape and anatomy of blood arteries allows to elucidate the dynamics of blood flow in these arteries. Typically, the arteries are a curved-tube like structure, with arterial walls exhibiting a composition of various porous layers. The current study embarks on a theoretical exploration of a two-fluid model of blood flow and heat transfer through the curved artery under an influence of a magnetic field. The artery walls are composed of Brinkman and Darcy layers. The blood flows through a curved artery exerts centrifugal forces on the arterial walls that leads to change the blood flow patterns. The significant effects of curvature along with the intensity of an applied magnetic field on the blood flow patterns, heat transfer, and resistance impedance in curved artery have been investigated in the present work. The mathematical model of the proposed work is tackled by the homotopy analysis method using physically relevant boundary and interface conditions. The significant outcome of the present work is that the heat transfer rate increases with the increase in the curvature parameter, and it reduces on raising the couple stress parameter and Hartmann number. The novelty of this work lies in the consideration blood flow and heat transfer in inner endothelial layers of curved porous artery. The result presented in this work is vital to assess the condition of atherosclerosis, aneurysms, vasculties, blood clot, etc.; beyond this, the present model can be extended for medical diagnostics, treatment planning, medical device design, drug delivery optimization, and biomedical engineering research. This study can ultimately contribute for improved patient care and outcomes in cardiovascular medicine.

Design and Implementation of Optimized PCI Express Physical Layer for High-Speed and Low-Latency Data Transfer

The PCIe (Peripheral Component Interconnect Express) Protocol is crucial for establishing high-speed data communication between computer peripherals, such as graphics cards and network cards etc. This communication protocol is transmitting data in packet format, with each packet containing both data and destination address and other essential information for accurate data delivery. This paper focused on Physical Layer to achieve High-Speed Data Transmission by reducing delay parameter. To minimize disturbances and enhance reliability, the physical layer uses scrambling technique and an 8b – 10b encoding technique is used for synchronization and error detection. Additionally, SIPO and PISO converts data format to improve efficiency and accuracy. The design is implemented using the Cadence compiler targeting 45nm process technology. This design is delay efficient resulting in path delay of 5.0ns and the operating frequency of 200MHz, power consumption of 1.2mw and an area of 1999µm².

Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off

N-polar Gallium nitride (GaN) technology is one of the most important technical routes for millimeter-wave devices. This paper introduces a new approach based on reverse epitaxial layer transfer technology to fabricate N-polar GaN materials. By combining low-damage surface-activated bonding and laser lift-off techniques, a wafer-scale N-polar GaN heterogeneous structure with low O impurities, high two-dimensional electron gas density, and high carrier mobility was obtained. The thin (∼2 nm) crystal bonding interlayer, coupled with the low thermal boundary resistance of only 6.8 m2K/G·W, provides evidence for the low interfacial damage caused by this approach. These results demonstrate its superiority as an attractive method for fabricating high-performance N-polar GaN millimeter-wave devices.

Water stress corrosion at wafer bonding interface during bond strength evaluation

Wafer-to-wafer bonding is becoming a critical unit process step with the increase in the demand for 3D integration. The widely used bonding method is plasma activated bonding, where it is essential to ensure sufficient bond strength to withstand the stresses generated during subsequent processes and achieve multi-layer stacking or layer transfer. Although the double cantilever beam method is widely used to evaluate wafer bond strength, significant variation occurs due to water stress corrosion at the bonding interface. These factors have not been adequately addressed, and precise measurement conditions have yet to be established. In this study, a semi-auto tool was introduced to conduct measurements under an inert atmosphere, whereby the influence of water stress corrosion was eliminated. Furthermore, the study elucidated the effects of the crystal orientation and blade insertion conditions. The impacts of interfacial voids and the annealing conditions on bond strength were revealed. Observation of the progress of delamination during measurements under an inert atmosphere enabled the effective estimation of the moisture content that remained inside the wafers, which then contributed to the selection of appropriate annealing conditions.

Improving restoration outcomes of boreal Sphagnum-dominated peatlands after peat-extraction: The key role of phosphorus fertilization

Fertilization is a common and effective restoration practice for some ecosystems. However, there are still knowledge gaps about the long-term effectiveness and impact of phosphorus fertilization during the restoration of degraded boreal Sphagnum peatlands using the Moss Layer Transfer Technique. Data gathered from 114 peatland sectors restored 1 to 25 years ago, encompassing around 2900 surveyed plots in Eastern Canada, were analyzed to investigate the influence of fertilization on plant re-establishment (cover, height, and aboveground biomass accumulation) and community composition. Fertilization with a low phosphorus dosage (1.64 g P m−2) of granular phosphate rock (P2O5; NPK 0–13-0) proved to accelerate peatland vegetation recovery by favoring a shift in plant community composition towards a Sphagnum dominance. This shift was encouraged by the fast colonization of Polytrichum strictum after fertilization, a nurse plant that stabilizes the peat substrate and facilitates the subsequent establishment of Sphagnum. Phosphorus fertilization increased by 42 % Sphagnum cover 25-year post-restoration and increased approximately by 15 % aboveground biomass accumulation 20-year post-restoration. Conversely, without fertilization, the success of restoration and long-term vegetation trajectories were uncertain. Phosphorus fertilization led to an increase in plant richness in the first 5 to 10 years after restoration and enhanced spatial heterogeneity in species composition throughout the later stages of restoration (20–25 years), suggesting that fertilization may foster dynamic, diverse plant communities. This study emphasizes fertilization's key role in restoring boreal Sphagnum peatland plant communities, especially in areas prone to episodes of freeze-thaw cycles, strongly advocating for the mandatory inclusion of phosphorus fertilization in the restoration process.

Coupled CFD-FEM modeling of fluid–thermal–structural interaction in a single-strand tundish

A mathematical model has been developed to study the fluid–thermal–structural interaction in a single-strand tundish based on a coupled computational fluid dynamics (CFD) and finite element method (FEM) approach. The flow pattern and temperature distribution of the molten steel were predicted by the CFD calculation. Heat transfer and thermal stress profiles in the solid layers were investigated by the FEM analysis. Case studies were carried out comparatively to investigate the effect of tundish preheating and thermal insulation. The results show that tundish preheating can maintain the desired temperature of the molten steel at the exit. The heating efficiency drops significantly after 3 h of preheating. Reducing the thermal conductivity of the insulation material will reduce the temperature of the tundish shell and increase the thermal stress on the working lining. The modeling results can be used to improve the reliability and lifetime of the tundish and reduce production costs.

A fixed point analysis of fractional dynamics of heat transfer in chaotic fluid layers

This manuscript aims to analyze the chaotic fluid layer heating from below, using the Atangana–Baleanu derivative to characterize the existence and uniqueness of this chaotic model based on the provided fixed point data. First, with suitable examples, we demonstrate the existence and uniqueness of fixed point solutions within the framework of controlled metric spaces. Secondly, we study the chaotic behavior of water with various Rayleigh numbers by experimenting with it while keeping a constant Prandtl number. Furthermore, the role of the Rayleigh number in magnifying chaotic behaviors is examined, with graphical simulations demonstrating the effect of different fractional orders of the Atangana–Baleanu derivative. This research provides insights into the dynamics of chaotic systems and their practical applications in controlled situations.

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor.

The synthesis of high-dielectric-constant (high-κ) dielectric materials and their integration with channel materials have been the key challenges in the state-of-the-art transistor architecture, as they can provide strong gate control and low operating voltage. For next-generation electronics, high-mobility two-dimensional (2D) layered semiconductors with dangling-bond-free surfaces and an atomic-thick thickness are being explored as channel materials to achieve shorter channel lengths and less interfacial scattering. Nowadays, the integration of high-κ dielectrics with high-mobility 2D semiconductors mainly relies on atomic layer deposition or transfer stacking, which may cause several undesirable problems, such as channel damage and interface traps. Here, we demonstrate the integration of high-mobility 2D semiconducting Bi2O2Se with transferable high-κ SrTiO3 as a 2D field-effect transistor by direct epitaxial growth. Remarkably, such 2D heterostructures can be efficiently transferred from the water-soluble Sr3Al2O6 sacrificial layer onto arbitrary substrates. The as-fabricated 2D Bi2O2Se/SrTiO3 transistors exhibit an on/off ratio over 104 and a subthreshold swing down to 90 mV/dec. Furthermore, the 2D Bi2O2Se/SrTiO3 heterostructures can be easily transferred onto flexible polyethylene terephthalate (PET) substrates, and the as-fabricated transistors exhibit good potential in flexible electronics. Our study opens up a new avenue for the integration of high-κ dielectrics with high-mobility 2D semiconductors and paves the way for the exploration of multifunctional electronic devices.

Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications

Achieving precise control over the growth of fully covered MoTe2 on a substrate is a crucial requirement for advancing device fabrication in the future. However, this goal continues to pose significant challenges. Thus, before the fabrication of a photodetector, we focused on optimizing a quasi-dry layer transfer process that eliminates the need for etchants and polymers. This optimization step is crucial for expanding the practicality of 2D materials in industrial applications. The transfer process, we developed can be applied to multiple 2D materials and substrates (growth/target), enabling the rapid production of elevated performance of 2D electrical devices and their van der Waals-based heterostructures. To demonstrate the effectiveness of this method, we successfully transferred MBE-grown MoTe2 on Si/SiO2 for photodetector application. The transferred MoTe2 is well characterized by various characterization tools including AFM, Raman, XPS, KPFM and UV-Vis spectroscopy. The fabricated metal semiconductor metal (MSM) photodetector on transferred MoTe2 shows the highest photoresponsivity of about 30 mA/W at low power density (0.6 μW/mm2) at an illumination source of 650 nm at a low applied voltage (3 V). The calculated detectivity of the MSM photodetector is found to be 6.56 ×1016 Jones with noise equivalent power (NEP) of 9.13 ×10−15 WHz−1/2 for this wavelength. This current research work opens the pathways to multiple research areas including optoelectronics and electronics.

Heavy metal removal performance of capacitive deionization technology studied by machine learning

Capacitive deionization (CDI) technology is utilized for efficient treatment of industrial wastewater, characterized by low energy consumption and environmental protection. In order to comprehend the correlation between key experimental parameters and the electrosorption capacity (EC) of heavy metals in CDI technology, this paper employs a genetic algorithm (GA) to optimize a backpropagation artificial neural network (BPANN) for predicting the EC of CDI technology for heavy metal ions, with the characteristics of electrode materials converted into numerical characteristics for further analysis. Compared to the BPANN, the optimized GABPANN model demonstrates superior predictive accuracy. It achieves automatic adjustment of the hidden layer structure, neuron count, and transfer functions. Furthermore, the grey relational analysis indicates that the electrode material and the initial pH value of the solution are pivotal in determining the EC of heavy metal ions. This underscores the efficacy of machine learning (ML) algorithms in forecasting the nonlinear dynamics of CDI systems and elucidates the influence of individual parameters on the efficacy of heavy metal removal.

Langmuir-Blodgett Transfer of Nanocrystal Monolayers: Layer Compaction, Layer Compression, and Lattice Stretching of the Transferred Layer.

Grazing incidence small angle X-ray scattering (GISAXS) was used to study the structure and interparticle spacing of monolayers of organic ligand-stabilized iron oxide nanocrystals floating at the air-water interface on a Langmuir trough, and after transfer to a solid support via the Langmuir-Blodgett technique. GISAXS measurements of the nanocrystal arrangement at the air-water interface showed that lateral compression decreased the interparticle spacing of continuous films. GISAXS also revealed that Langmuir-Blodgett transfer of the nanocrystal layers to a silicon substrate led to a stretching of the film, with a significant increase in interparticle spacing.

Density-functional theory study of SnSe/GeSe heterostructure for gaseous sulfur hexafluoride decomposition products sensing

Partial discharge, local overheating and other factors will lead to the decomposition of superior dielectric gas sulfur hexafluoride (SF6) used in gas insulated substations (GIS). Detecting gaseous sulfur hexafluoride (SF6) decomposition products by gas sensors to diagnose early latent insulation failures is a potential approach to guarantee safety and reliability of gas insulated substations (GIS). However, the main difficulties in the detection of SF6 decomposition products lie in sensitivity, operating temperature and sulfur poisoning of the sensor. Metal oxide selenides (MOSs)-based gas sensors suffer from high working temperature, long recovery time, and sulfur poisoning. Two dimensional selenides-based chemiresistor-type gas sensors have been reported to detect certain gases at room temperature. Compared with pristine materials, heterostructures usually have narrower band gaps and higher carrier mobility which promise low power and sensitivity. In this work, a SnSe/GeSe van der Waals heterostructure model is constructed and optimized to investigate the gas sensing properties by density functional theory (DFT) calculations. Compared with the pristine SnSe and the pristine GeSe, the SnSe/GeSe heterostructure exhibits huge adsorption energy and comparatively large charge transfer to the SF6 decomposition gases. The band structure analysis, charge analysis, electron localization function (ELF), and density of states (DOS) analysis suggest that the excellent sensing properties are contributed to the synergistic effect between the SnSe and the GeSe layers: both the layers transfer charge and orbitally interact with gas molecules. Besides, physical adsorption of the SF6 decomposition gases on SnSe/GeSe heterostructure avoids sulfur poisoning of the material, promising the recoverability and repeatability of detection. This study provides theoretical bases for the repeatable detection of SF6 decomposition products by SnSe/GeSe heterostructures and its potential in the design of electronic nose.

Preparation of brittle ITO microstructures using Laser-Induced forward transfer technology

The performance of transparent conductive microstructures plays a significant role in determining the device efficiency. The fabrication of ITO microstructures on the flexible optoelectronic devices remains challenging because of the high-temperature processing requirements and brittleness of the ceramic material. This paper highlights a three-dimensional microfabrication technique that combines sacrificial layer etching and laser-induced transfer. By studying the donor material thickness and the laser energy density, control of the sacrificial layer transfer thrust was achieved to yield an optimal microstructure performance. Different shapes of ITO transparent conductive microstructures were fabricated on polydimethylsiloxane (PDMS) surfaces, demonstrating structural integrity, visible light transmittances > 90 %, and resistivities of ≤ 8 × 10−4 Ω·cm. Finite element analysis was employed to simulate the impact transfer of the donor material onto the receiving substrate, thereby elucidating the energy-absorbing protective role of the flexible PDMS layer. Effective control of the transfer force was identified as a crucial factor in achieving the successful transfer of brittle films. This high-precision and rapid array processing approach meets the demands of automated batch manufacturing, indicating its potential for use in patterned processing on flexible substrates, as an alternative to lithographic techniques. This technique could be applied in the preparation of electronic skins and flexible devices. Additionally, for the first time, a 3 × 3 pixel resistive array sensor was integrated on a Ag nanowires/PDMS surface, demonstrating array pressure-sensing capabilities at pressures of 0–80 kPa. This study represents a significant step towards the development of multifunctional flexible optoelectronic devices.