Heterostructure Layers Research Articles

Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg1-xCdxTe heterostructure detector

Low-frequency noise spectroscopy (LFNS) along with deep-level transient spectroscopy (DLTS) are complementary and effective tools to study and characterize the carrier traps in semiconductors. These traps caused, e.g., by contamination by foreign atoms or various types of dislocations, can significantly affect quantum efficiency, dark current, responsivity, and noise generated by devices especially when operating under bias. Since DLTS is difficult to apply in high leakage current devices, LFNS can be used to overcome this limitation, so the use of both methods gives very effective and reliable results during research on various devices. In this paper, we reported a study of defects activation energies in HgCdTe Auger-suppressed long-wavelength infrared (LWIR) heterostructure-based detector using these two experimental methods. By proper structure design, the examined detector was optimized for high operating temperature (HOT) conditions ≥ 200 K. The results obtained showed that in such detectors, grown by the metal organic chemical vapor deposition (MOCVD) technique, a few traps can be extracted. The found trap levels and activation energies were located below and above the absorber bandgap, so they can be identified in both absorber and other heterostructure layers. Due to specific multilayer architecture, a precise interpretation of the results is difficult. Nevertheless, the most probable trap locations based on the current state of knowledge were discussed and proposed.

Heterostructuring the CO2-derived Mo2C layer with MoP2 via molten salt electrolysis for efficient hydrogen evolution reaction

Electrochemical fixation of CO2 in molten salts as carbides for catalyzing the hydrogen evolution reaction can contribute to carbon neutrality and value-added conversion of CO2 as well as facilitate the production of sustainable green hydrogen energy. However, the functional ability of the CO2-derived carbides still needs to be substantially improved. Herein, heterostructuring the CO2-derived Mo2C layer with MoP2 is realized via electro-splitting of CO2 in Ca3(PO4)2-containing molten salt. The as-designed Mo2C–MoP2 heterostructure layer presents significantly improved HER performances, namely overpotential being 109 mV @ 100 mA cm−2 and stability for 600 h @ 200 mA cm−2, greatly outperforming both the bare Mo2C layer and commercial Pt candidates. The superior performances of the Mo2C–MoP2 heterostructure are in one way attributed to the modified electronic structure that decrease the energy barrier of the Volmer rate-determining step for HER. In another way, the Mo2C–MoP2 dual-phase increases the hydrophilicity ability of the catalytic layer, accelerating the detachment of the H2 bubbles. The results can provide new insights for both value-added fixation of carbon dioxide and preparation of high-performance non-noble electrocatalyst.

Ultra-tunable dielectric capacitors enhanced by coupling ferroelectric field effect and semiconductor field effect

Tunable ferroelectric film capacitors play an important role in tunable microwave devices and filter systems due to their high dielectric constant, low loss, and high dielectric tunability. However, there is a trade-off between low loss and high tunability, which limits further enhancement of dielectric performance. Here, we propose an ultra-tunable capacitor by designing a Ba0.7Sr0.3TiO3 (BST)–semiconductor heterostructure. In the tunable capacitor, the BST film is fabricated directly on p-type silicon substrates by magnetron sputtering, and a heterostructure layer is constructed. The coupling effects between the semiconductor depletion layer capacitance and the BST capacitance produce higher capacitance tunability than a traditional sandwich BST capacitor. Based on the coupling effects, a metal–ferroelectric–semiconductor–ferroelectric–metal capacitor is developed, which enables the capacitor to operate under both negative and positive biases, which has an n value (n=Cmax/Cmin) of 90 with 40 V bias voltage and a maximum Q of 1000. The results offer a potential approach to designing high-performance tunable capacitors on silicon with BST film that could build tunable filters for information processing in communication systems.

Strain-tunable robust ferroelectricity in two-dimensional monochalcogenide heterostructures

Low-dimensional layered ferroelectric van der Waals heterostructures (vdWHs) are of tremendous interest for novel nanoscale electronic applications, including nonvolatile memories, transistors, and sensors. Here, we design SnS/GeSe multilayer vdWHs and show that the construct is ferroelectric with a spontaneous polarization of 3.71 × 10-10Cm−1. We computationally analyze SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures using density functional theory (DFT) with van der Waals (vdW) correlations. Specifically, we determine structural parameters, formation energies, polarization, and phonon modes. Negative formation energies with real frequencies of phonon spectra confirm the (relative) stabilities of SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures. The electronic properties of both monolayers are retained in the SnS/GeSe construct, which exhibits a direct band gap with a value of 1.13 eV. The calculations of phonon spectra and double-well potential of monolayers unveil a Pnm21 ferroelectric – Pnmm paraelectric phase transformation. The SnS/GeSe multilayer shows the largest spontaneous polarization of 3.71 × 10-10Cm−1compared to 2.78 × 10-10Cm−1and 3.69 × 10-10Cm−1for SnS- and GeSe-MLs, respectively.Additionally, we demonstrate that the spontaneous polarization, band gap, dynamic stability, and band gap types of SnS/GeSe heterostructures can be tuned through the application of biaxial strains. For an in-plane 5 % tensile strain, SnS/GeSe has a spontaneous polarization of 3.90 × 10-10Cm−1. The band gap of the SnS/GeSe heterostructure widens with increasing tensile biaxial strain, maintaining its characteristics as a direct band gap semiconductor up to 2 % tensile strain. These findings demonstrate that SnS/GeSe heterostructures are promising materials with significant potential for applications in nanoelectronics.

Nanoindentation of nano-SiC/Si hybrid crystals and AlN, AlGaN, GaN, Ga<sup>2</sup>O<sup>3</sup> thin films on nano-SiC/Si

The review presents systematization and analysis of experimental data on nanoindentation (NI) of a whole class of new materials – wide-gap AlN, GaN, AlGaN and β-Ga2O3 heterostructures formed on a hybrid substrate of a new SiC/Si type, which were synthesized by the method of coordinated atom substitution. The deformational and mechanical properties of the investigated materials are described in detail. The methodology of the NI is described, and both advantages and disadvantages of the NI method were analyzed. The description of the apparatus to conduct the experiments on NI was given. The basic provisions of a new model for describing the deformation properties of a nanoscale rigid two-layer structure on a porous elastic base were proposed. The original method of visualization of residual (after mechanical interaction) deformation in transparent and translucent materials was described. Experimentally determined values of elastic moduli and hardness of SiC nanoscale layers on Si formed by the method of coordinated substitution on three main crystal planes of Si, namely (100), (110) and (111), and elastic moduli and characteristics (elastic modulus, hardness, strength) of surface layers of semiconductor heterostructures AlN/SiC/Si, AlGaN/SiC/Si, AlGaN/AlN/SiC/Si, GaN/SiC/Si and GaN/AlN/SiC/Si grown on SiC/Si hybrid substrates. The unique mechanical properties of a new material β-Ga2O3 formed on SiC layers grown on Si surfaces of orientations (100), (110) and (111) were described.

Extremely weak sub-Kelvin electron–phonon coupling in InAs on Insulator

We are proposing a hybrid superconductor–semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by the strength of the electron–phonon (e-ph) coupling and the associated power loss. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low e-ph coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.

Dimensional resonance of intrinsic stimulated picosecond emission while it induces a photonic crystal and electron population oscillations in heterostructure Al<sub>x</sub>Ga<sub>1–x</sub>As–GaAs–Al<sub>x</sub>Ga<sub>1–x</sub>As

Powerful picosecond optical pumping of the GaAs heterostructure layer causes the generation of stimulated picosecond emission in it. Due to its high intensity, the emission induces a Bragg grating of the electron population in the active region of the layer, making the latter an active photonic crystal. In the emission field, the inverse population of electrons oscillates with time, which should lead to spatiotemporal modulation of the emission and this population. It has been discovered that if the distance Y between the end of the heterostructure and the center of the active medium and the geometric parameters of the indicated modulation and movement of emission in the photonic crystal satisfy certain conditions, then dimensional resonance occurs - a maximum of modulation of the dependence of the energy of emission emerging from the end on Y and on pump energy appears locally.

Optimizing photocurrent intensity in layered SiGe heterostructures

Abstract We study the dependence of photo-spectral intensity on tri- and multilayers of SiO2/[SiGe [ d SiGe ]/SiO2] N with repetitions N = 1 to 10 and thicknesses d SiGe = 5 –100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition N. The change in intensity could then be further tuned by changing the thickness of the SiGe layers d SiGe . We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.

Resolving intermediates during the growth of aluminum deuteroxide (Hydroxide) polymorphs in high chemical potential solutions

Aluminum hydroxide polymorphs are of widespread importance yet their kinetics of nucleation and growth remain beyond the reach of current models. Here we attempt to unveil the reaction processes underlying the polymorphs formation at high chemical potential. We examine their formation in-situ from supersaturated alkaline sodium aluminate solutions using deuteration and time-resolved neutron pair distribution function analyses, which indicate the formation of individual Al(OD)3 layers as an intermediate particle phase. These layers ultimately stack to form gibbsite- or bayerite-like layered heterostructures. Ex-situ characterization of the recovered precipitates using 27Al magic angle spinning nuclear magnetic resonance spectroscopy, Raman, X-ray diffraction, and scanning electron microscopy, suggests the presence of additional intermediate states, an amorphous compound bearing both tetrahededrally- and penta-coordinated Al3+. These observations reveal the complex pathways to form Al(OD)3 monolayers via either transient pentacoordinate species or amorphous-to-ordered transitions. The subsequent crystallization of admixed gibbsite/bayerite is followed by an Al(OD)3 monolayer attachment process.

High-Linearity Ta2O5 Memristor and Its Application in Gaussian Convolution Image Denoising.

In the image Gaussian filtering process, convolving with a Gaussian matrix is essential due to the numerous arithmetic computations involved, predominantly multiplications and additions. This can heavily tax the system's memory, particularly with frequent use. To address this issue, a W/Ta2O5/Ag memristor was employed to substantially mitigate the computational overhead associated with convolution operations. Additionally, an interlayer of ZnO was subsequently introduced into the memristor. The resulting Ta2O5/ZnO heterostructure layer exhibited improved linearity in the pulse response, which enhanced linearity facilitates easy adjustment of the conductance magnitude through a linear mapping of the number of pulses and the conductance. Subsequently, the conductance of the W/Ta2O5/ZnO/Ag bilayer memristor was employed as the weights for the convolution kernel in convolution operations. Gaussian noise removal in image processing was achieved by assembling a 5 × 5 memristor array as the kernel. When denoising was performed using memristor arrays, compared to denoising achieved through Gaussian matrix convolution, an average loss of less than 5% was observed. The provided memristors demonstrate significant potential in convolutional computations, particularly for subsequent applications in convolutional neural networks (CNNs).

Optically enhanced organic phototransistors for adaptive image processing under complex light conditions

Effectively handling massive information in complex lighting conditions is crucial for security-focused machine vision, as it relies on precise image feature detection and encryption/decryption to ensure integrity and confidentiality. Traditional hardware, primarily based on complementary metal-oxide-semiconductor (CMOS) technology, struggles with the complexity of processing tasks around the clock. To address this challenge, a ternary organic heterostructure visuomorphic phototransistor was tailored for adaptive critical image processing. The light coupling induced by the porous heterostructural layer enhances the light absorption efficiency by 2.5-fold. Our phototransistor exhibits bidirectional photoresponse across the visible and near-infrared (NIR) spectral regions, enabling adaptive edge detection in varying lighting conditions with precision above 85 %. The phototransistor array facilitates image encryption/decryption with a superior accuracy of 12 %/90 % compared to existing counterparts. This ternary organic hetero-integration combines multiple response modes, enabling compact and efficient critical feature processing.

Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure

We report the magnetic field dependent magnetization and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/ γ -Fe2O3/LSMO trilayer heterostructure and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer ( γ -Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half ) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0–7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T < H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @ 5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @ 5 K and 15% @ 300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @ 5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @ 5 K and 23% @ 300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.

Ferroelectricity-controlled magnetic ordering and spin photocurrent in NiCl2/GeS multiferroic heterostructures

Controlling magnetism solely through electrical means is indeed a significant challenge, yet holds great potential for advancing information technology. Herein, our investigation presents a promising avenue for electrically manipulating magnetic ordering within 2D van der Waals NiCl2/GeS heterostructures. These heterostructures, characterized by their unique magnetic-ferroelectric (FE) layer stacking, demonstrate spin-constrained photoelectric memory, enabling low-power electrical writing and non-destructive optical reading. The two orientations of the polarization in the GeS FE layer bring about changes in the ground state configuration, transitioning from ferromagnetic (FM) to antiferromagnetic (AFM) orderings within the NiCl2magnetic layer. Correspondingly, the light-induced charge transfer prompts either spin-polarized or unpolarized currents from the FM or AFM states, serving as distinct '1' or '0' states, and facilitating applications in logic processing and memory devices. This transition stems from the interplay of interfacial charge transfer mechanisms and the influence of the effective electric field (Eeff), bringing a non-volatile electric enhancement in the magnetic anisotropy energy within the NiCl2/GeS heterostructure. Overall, our study highlights the NiCl2/GeS heterostructure as an optimal candidate for realizing spin-dependent photoelectric memory, offering unprecedented opportunities for seamlessly integrating memory processing capabilities into a single device through the utilization of layered multiferroic heterostructures.

Layered Heterostructure of Graphene and TiO2 as a Highly Sensitive and Stable Photoassisted NO2 Sensor.

As an atomically thin electric conductor with a low density of highly mobile charge carriers, graphene is a suitable transducer for molecular adsorption. In this study, we demonstrate that the adsorption properties can be significantly enhanced with a laser-deposited TiO2 nanolayer on top of single-layer CVD graphene, whereas the effective charge transfer between the TiO2-adsorbed gas molecules and graphene is retained through the interface. The formation of such a heterostructure with optimally a monolayer thick oxide combined with ultraviolet irradiation (wavelength 365 nm, intensity <1 mW/mm2) dramatically enhances the gas-sensing properties. It provides an outstanding sensitivity for detecting NO2 in the range of a few ppb to a few hundred ppb-s in air, with response times below 30 s at room temperature. The effect of visible light (436 and 546 nm) was much weaker, indicating that the excitations due to light absorption in TiO2 play an essential role, while the characteristics of gas responses imply the involvement of both photoinduced adsorption and desorption. The sensing mechanism was confirmed by theoretical simulations on a NO2@Ti8O16C50 complex under periodic boundary conditions. The proposed sensor structure has significant additional merits, such as relative insensitivity to other polluting gases (CO, SO2, NH3) and air humidity, as well as long-term stability (>2 years) in ambient air. The results pave the way for an emerging class of gas sensor structures based on stacked 2D materials incorporating highly charge-sensitive transducer and selective receptor layers.

Modification of nickel foam with nickel phosphate catalyst layer via anodizing for boosting the electrocatalytic urea oxidation and hydrogen evolution reactions

Urea oxidation reaction (UOR) and hydrogen evolution reaction (HER) are the key processes for implementing urinated water electrolysis and hydrogen green production, respectively. This contribution investigates the modification of commercial nickel foam (NF) with a nickel phosphate (NiPO/NF) heterostructure layer via anodizing in phosphate solution at various potentials (5, 10 and 15 V) as a simple and efficient route to boost the urea-assisted water electrolysis and hydrogen production in alkaline medium. The morphology and composition physicochemical characterisation of the phosphate layer exhibit aggregates of crystalline nanoparticles with interstitial mesoporous and macroporous networks with a mole composition ratio of 9.42: 1.0: 8.14 for Ni: P: O respectively. The electrochemical measurements revealed the NiPO/NF anodized at 10 V exhibits a superior electroactive surface area of 255 cm2, a substantially higher urea oxidation current compared to pristine NF, achieving 20 and 500 mA/cm2 at 1.35 and 1.6 V vs. RHE respectively and retained 100 % of activity during the urea electrolysis for more than 3 h. The electrochemical impedance analysis confirmed the alkaline urea oxidation reaction proceeded via indirect (EC) and direct mechanism and the CO2 intermediates adsorption–desorption became the predominant reaction at more positive potential. The NiPO/NF anode employed in an H-shape can deliver up to ±400 mA/cm2 for UOR/HER at a bias potential of 1.85 V and 8-fold (2.0 mmol/min) much higher hydrogen production rate compared to the pristine NF anode (0.25 mmol/min). Combining commercial nickel foam modification via anodizing and alkaline urea electrolysis at ambient conditions offers a unique and innovative solution for both large-scale hydrogen green production as well as remedy of the urinated wastewater for a more sustainable future.

Layered heterogeneous polyamide-hydrazide based reverse osmosis membranes with enhanced separation performance

It is the goal of membrane science to continuously overcome the trade-off between permeability and selectivity of reverse osmosis (RO) membranes. In this study we propose a strategy based on the pore characteristics of cyclobutane-1,2,3,4-tetracarboxylic acid chloride (BTC) and trimesoyl chloride (TMC) crosslinked with cyclobutane-1,2,3,4-tetracarbohydrazide (CBTH) for constructing layered heterostructures of polyamide-hydrazide membranes. By using BTC and TMC successively, the porous BTC-CBTH polyamide was employed as the bottom layer, and the dense TMC-CBTH polyamide as the top layer, creating an RO membrane with a “sparse and dense” heterogeneous structure. This layered heterostructure ingeniously differentiates the structure and function of the selective layer of the RO membrane, enabling the loose bottom layer and the dense top layer to respectively perform the tasks of support and separation. The permeability coefficient of the prepared RO membrane reached 3.82 L⋅m−2⋅h−1⋅bar−1, which was enhanced by 29 % compared with that of the polyamide-hydrazide membrane prepared by single-step interfacial polymerization, while the rejection of NaCl was maintained at 99.13 %. The heterogeneous layered construction strategy effectively improves the permeability and selectivity of the RO membrane, and provides a universal solution for consistently overcoming the “trade-off” effect in RO membranes.

Anchoring Ni(OH)2-CeOx Heterostructure on FeOOH-Modified Nickel-Mesh for Efficient Alkaline Water-Splitting Performance with Improved Stability under Quasi-Industrial Conditions.

Developing low-cost and industrially viable electrode materials for efficient water-splitting performance and constructing intrinsically active materials with abundant active sites is still challenging. In this study, a self-supported porous network Ni(OH)2-CeOx heterostructure layer on a FeOOH-modified Ni-mesh (NiCe/Fe@NM) electrode is successfully prepared by a facile, scalable two-electrode electrodeposition strategy for overall alkaline water splitting. The optimized NiCe0.05/Fe@NM catalyst reaches a current density of 100 mA cm-2 at an overpotential of 163 and 262mV for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER), respectively, in 1.0m KOH with excellent stability. Additionally, NiCe0.05/Fe@NM demonstrates exceptional HER performance in alkaline seawater, requiring only 148mV overpotential at 100mA cm-2. Under real water splitting conditions, NiCe0.05/Fe@NM requires only 1.701V to achieve 100mA cm-2 with robust stability over 1000h in an alkaline medium. The remarkable water-splitting performance and stability of the NiCe0.05/Fe@NM catalyst result from a synergistic combination of factors, including well-optimized surface and electronic structures facilitated by an optimal Ce ratio, rapid reaction kinetics, a superhydrophilic/superaerophobic interface, and enhanced intrinsic catalytic activity. This study presents a simple two-electrode electrodeposition method for the scalable production of self-supported electrocatalysts, paving the way for their practical application in industrial water-splitting processes.

Large-scale 2D heterostructures from hydrogen-bonded organic frameworks and graphene with distinct Dirac and flat bands

The current strategies for building 2D organic-inorganic heterojunctions involve mostly wet-chemistry processes or exfoliation and transfer, leading to interface contaminations, poor crystallizing, or limited size. Here we show a bottom-up procedure to fabricate 2D large-scale heterostructure with clean interface and highly-crystalline sheets. As a prototypical example, a well-ordered hydrogen-bonded organic framework is self-assembled on the highly-oriented-pyrolytic-graphite substrate. The organic framework adopts a honeycomb lattice with faulted/unfaulted halves in a unit cell, resemble to molecular “graphene”. Interestingly, the topmost layer of substrate is self-lifted by organic framework via strong interlayer coupling, to form effectively a floating organic framework/graphene heterostructure. The individual layer of heterostructure inherits its intrinsic property, exhibiting distinct Dirac bands of graphene and narrow bands of organic framework. Our results demonstrate a promising approach to fabricate 2D organic-inorganic heterostructure with large-scale uniformity and highly-crystalline via the self-lifting effect, which is generally applicable to most of van der Waals materials.

Electrochemical performance of g-C3N4 embedded NiO nanocomposite anodes for Lithium-ion batteries

The combination of two-dimensional layered heterostructures with transition metal oxide electrodes has attracted considerable attention. In this work, the hydrothermal method is adopted to produce graphitic carbon nitride-embedded Nickel oxide (g-CN/NiO) nanocomposites and tested their electrochemical performance against Li/Li+ half cells. The formation of g-CN/NiO nanocomposite is confirmed through structural analysis techniques, such as XRD and XPS. The scanning electron microscopy image reveals the existence of spherical g-CN/NiO nanocomposite. The g-CN embedded NiO anodes exhibited excellent electrochemical performance and cyclability, and the g-CN/NiO versus Li/Li+ half-cell delivered an initial discharge capacity of 906.4 mAh g-1 at a 0.1C rate. At 500 cycles, the anode delivered 195 mAh g-1 capacity with a columbic efficiency of 99.5 %. Interestingly, the g-CN/NiO anode exhibits two distinct trends in its cycling performance. Until 300 cycles, the capacity fade was perceived, and after 300 cycles, due to the overhang mechanism, an increasing trend was observed. The electrochemical result reveals that the introduction of g-CN improves the structural stability and electron transport properties of g-CN/NiO anodes.

Study on tensile properties of copper/graphene/2D-SiC composite materials: A molecular dynamics simulation

Van der Waals heterostructures composed of graphene and 2D-SiC generally exhibit outstanding electrical and mechanical properties. However, these structures are prone to brittle failure during damage, which greatly limits their application in practical engineering. Conversely, copper-based composite materials have been discovered to significantly enhance material toughness. Therefore, a novel copper/graphene/2D-SiC composite material is designed and molecular dynamics simulation is performed to investigate its mechanical properties under uniaxial tension. The results show that these composite materials possess the advantages of both high strength and toughness due to the heterostructure layer and the copper layer. Further analysis of the deformation mechanism of the copper layer indicates that it is mainly attributed to short-range atomic slip and the generation of Shockley partial dislocations. The heterostructure layer can partially impede the propagation of dislocations, enhancing the overall tensile strength of the composite materials. After the copper layer enters the plastic flow state, the variation of bond lengths and bond angles suggests that the heterostructure layer bears the tensile load, and the 2D-SiC layer is more prone to fracture due to higher stiffness compared to the graphene layer. Additionally, the influence of temperature and strain rate on the tensile properties is investigated. It is observed that increasing temperature could gradually reduce the tensile strength of the composite materials while the strain rate, within a certain range, has little effect.