Layer In Polymer Light-emitting Diodes Research Articles

Excellent Electroluminescent Property of Eu3+-Induced Polystyrene-co-poly(acrylic acid) Aggregates (EIPAs) in Polymeric Light-Emitting Diodes.

Eu3+-induced polystyrene-co-poly(acrylic acid) aggregates (EIPAs) were synthesized using a self-assembly approach, and their structures and photophysical characteristics were examined to achieve effective monochromatic red emission in polymer light-emitting diodes (PLEDs). By adjusting the monomer ratio in RAFT polymerization, the size of Eu3+-induced block copolymer nanoaggregates can be regulated, thereby modulating the luminescence intensity. High-performance bilayer polymer light-emitting devices were fabricated using poly(9,9-dioctylfluorene) (PFO) and 2-(tert-butylphenyl)-5-biphenylyl-1,3,4-oxadiazole (PBD) as the host matrix, with EIPAs as the guest dopant. The devices exhibited narrow red emission at 615 nm with a full width at half-maximum (fwhm) of 15 nm across doping concentrations of 1, 3, 5, and 10 wt %. At a doping concentration of 3 wt %, the device achieved a maximum brightness of 1864.48 cd/m2 at 193.82 mA/cm2 and an external quantum efficiency of 3.20% at a current density of 3.5 mA/cm2. These results indicate that incorporating polystyrene-co-poly(acrylic acid) with Eu3+ complexes enhances the excitation and emission intensity, as well as the structural stability of the emitting layer in PLEDs, thereby improving the device performance.

Improved performance of polymer light-emitting diodes using graphene oxide doped with silver nanoparticles as the hole-transport layer

This study successfully demonstrates the fabrication of a thin film of graphene oxide doped with silver nanoparticles (GO:AgNPs) using electrochemical exfoliation and photochemical synthesis. The GO:AgNPs thin film exhibits a higher work function and conductivity compared to poly[3,4-ethylenedioxythiophene] polystyrene sulfonate (PEDOT:PSS), making it a promising candidate for the hole-transport layer in polymer light-emitting diodes (PLEDs). Among various configurations, a PLED incorporating GO:AgNPs as the interlayer, which is prepared under blue-light illumination, exhibits optimal luminescent performance. This configuration achieves the highest luminance of 6341 cd/m2 and the highest average current efficiency of 1.87 cd/A. Notably, this novel PLED demonstrates a remarkable 168 % enhancement in average current efficiency and an impressive 637 % increase in electroluminescence intensity compared to a PLED employing a PEDOT:PSS interlayer.

Metal Oxide Films as Charge Transport Layers for Solution-Processed Polymer Light-Emitting Diodes

Here, we discuss the use of metal oxide films as charge transport layers in polymer light-emitting diodes containing poly(9,9-dioctyl-9H-fluorene-2,7-diyl) (PFO) as emissive layer. A simple device architecture consisting of glass-ITO | poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) | poly(9-vinylcarbazole) (PVK) | PFO | Ca | Al was used as starting point. This device assembly allows the investigation of basic properties of polymeric emitting layers, but does not provide stable devices with high performances. Thus, a more complex, multilayered diode structure is needed. We pursuit that goal with focus on the use of low-cost, easily processed materials. At one side, solution-processed non-stoichiometric MoOx films were used to replace the PEDOT:PSS as hole transport layer. At the other interface, solution-processed ZnO films containing either the bare oxide or a ZnO/carbon dots composite were introduced as electron transport layer. By tunning the characteristics of the metal oxide films, the performance of the blue-emitting PFO-based polymer light-emitting diodes (PLEDs) was massively enhanced.

Silver-doped nickel oxide as an efficient hole-transport layer in polymer light-emitting diodes.

In this study, silver-doped nickel oxide (NiO:Ag) was successfully synthesized by a sol-gel method and spin-coated on indium titanium oxide (ITO) as a hole-transport layer for polymer light-emitting diodes (PLED). After the calcination of the NiO:Ag/ITO substrate at 300°C for 1 h, stable conductive regions and the mean work-function on the NiO:Ag/ITO surface reached 89.43% and 5.53 eV, respectively, which were greater than those on a conventional poly [3,4-ethylenedioxythiophene] polystyrene sulfonate (PEDOT:PSS)/ITO surface. When NiO:Ag (300°C)/ITO was used as an anode window substrate for PLEDs, the enhancement factor for the average current efficiency in the current-density range of 20-50 mA/cm2 and electroluminescence intensity at an applied bias of 8.0V were 4.60 and 2.55 times, respectively, in comparison with those of PLED based on a conventional PEDOT:PSS/ITO anode. HIGHLIGHTS: NiO:Ag is synthesized by a sol-gel method and spin-coated on ITO as a HTL for PLED. NiO:Ag/ITO calcined at 300°C for 1h has the best microscopic electrical properties. The performance for proposed PLED is much better than that for typical PLED.

Photophysics behind luminescence phenomenon in conducting conjugate polymer blends for application as an emissive layer in PLEDs

Luminescence quenching by polarons is an important loss mechanism in polymer light-emitting diodes (PLEDs). Steady-state and time-resolved photoluminescence spectroscopy of polyaniline (PAni) thin films with varying polaron doping has helped us to realize polaron density-dependent photoluminescence quenching mechanisms inside the thin films. A sharp reduction in photoluminescence emission spectra has been observed at doping densities between 1017 and 1019 cm−3. This doping concentration-dependent photoluminescence phenomenon in PAni is modeled quantitatively using quenching of excitons by polarons through long-range Förster resonance energy transfer (FRET) and short-range charge transfer (CT) mechanisms. The results match well with the experimental findings that demonstrate that both models need to be considered to explain the mechanisms of luminescence quenching. FRET and CT phenomena inside an emissive layer of PLEDs have been demonstrated to play a pivotal role in the quantum efficiency roll-off phenomenon at high current density using experimentally obtained and theoretically calculated kinetic quenching parameters. To get rid of low luminescence in PAni, it has been blended with poly(methyl) methacrylate (PMMA) that enhances its luminescence manifold. The blending of PMMA leads to the introduction of a new photophysical phenomenon—donor PMMA concentration-dependent FRET contrary to original FRET theory proposed by Förster. Concentration-dependent FRET leads to a sharp drop in luminescence from the polymer blend after reaching a critical concentration of PMMA. Therefore, the present study explores the reason behind low luminescence in conducting polymers and demonstrates ways to mitigate it along with providing an account of the photo-physics of the conducting polymer as an emissive layer in PLEDs.

Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer

In this paper, we study the transport and recombination mechanisms of charge carriers in a single layer PLED device based on PFO as emitting layer with considering Gaussian disorder, exponential distribution of traps, Poole–Frankel type field dependent hopping mobility and field independent effective transport hopping energy models. For this purpose, we use the one-dimensional and time-independent drift–diffusion model for simulation of electrical and optical characteristics of the PFO based PLED devices such as current density–luminance–voltage (J–L–V), recombination rate and singlet exciton density profile in steady-state and room temperature conditions. Also, we study the influence of the characteristic temperature and density of electron traps on the performance of devices at different voltages. Another topic is analyzing the current density–voltage characteristics of uni-polar devices (hole only or electron only) by using the well known expressions for trap-limited current and space charge-limited current and comparing them with simulation results.

Inverting the Handedness of Circularly Polarized Luminescence from Light-Emitting Polymers Using Film Thickness.

The emission of circularly polarized light is central to many applications, including data storage, optical quantum computation, biosensing, environmental monitoring, and display technologies. An emerging method to induce (chiral) circularly polarized (CP) electroluminescence from the active layer of polymer light-emitting diodes (polymer OLEDs; PLEDs) involves blending achiral polymers with chiral small-molecule additives, where the handedness/sign of the CP light is controlled by the absolute stereochemistry of the small molecule. Through the in-depth study of such a system we report an interesting chiroptical property: the ability to tune the sign of CP light as a function of active layer thickness for a fixed enantiomer of the chiral additive. We demonstrate that it is possible to achieve both efficient (4.0 cd/A) and bright (8000 cd/m2) CP-PLEDs, with high dissymmetry of emission of both left-handed (LH) and right-handed (RH) light, depending on thickness (thin films, 110 nm: gEL = 0.51, thick films, 160 nm: gEL = -1.05, with the terms "thick" and "thin" representing the upper and lower limits of the thickness regime studied), for the same additive enantiomer. We propose that this arises due to an interplay between localized CP emission originating from molecular chirality and CP light amplification or inversion through a chiral medium. We link morphological, spectroscopic, and electronic characterization in thin films and devices with theoretical studies in an effort to determine the factors that underpin these observations. Through the control of active layer thickness and device architecture, this study provides insights into the mechanisms that result in CP luminescence and high performance from CP-PLEDs, as well as demonstrating new opportunities in CP photonic device design.

Microwave-assisted synthesis of FexZn1−xO nanoparticles for use in MEH-PPV nanocomposites and their application in polymer light-emitting diodes

A one-step microwave-assisted polyol method was used to fabricate FexZn1−xO (x = 0.01, 0.05, 0.10) nanoparticles. Zinc acetate dihydrate, iron (III) acetylacetonate, oleic acid and diethylene glycol were placed in a Teflon-lined reaction vessel. The reaction mixture was heated up to 250 °C for 15 min in a microwave reactor. The surface modification with oleic acid prevented agglomeration of the nanoparticles. The X-ray diffraction analysis revealed characteristics wurtzite hexagonal structure of ZnO and successful incorporation of the Fe dopant into the host crystal lattice. Doping of ZnO by Fe led to bandgap modification as estimated by Tauc plot. The as-prepared nanopowders were dispersed in toluene and mixed with a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) polymer to make stable homogenous dispersions. Then, the FexZn1−xO/MEH-PPV nanocomposite thin films were prepared by spin coating and used as thin active layers in polymer light-emitting diodes. The thickness of deposited FexZn1−xO/MEH-PPV film was ca. 30 nm and that of reference neat MEH-PPV film was ca. 25 nm. The electroluminescent spectroscopy study showed that direct blending of MEH-PPV with Fe-doped ZnO nanoparticles is a simple and effective approach to significantly increase the luminance intensity of the diode in comparison to the diode fabricated by neat MEH-PPV.

Colloidal cobalt-doped ZnO nanoparticles by microwave-assisted synthesis and their utilization in thin composite layers with MEH-PPV as an electroluminescent material for polymer light emitting diodes

Abstract CoxZn1-xO (x = 0.01, 0.05 and 0.1) nanoparticles were prepared by microwave-assisted polyol method from zinc acetate dihydrate and Co(II) acetylacetonate. The reactions were performed in diethylene glycol (DEG) at 250 °C with the use of oleic acid as a surfactant. Resulting nanoparticle (ca. 10 nm) precipitates were washed with methanol and dried or kept as colloidal solutions redispersed in toluene. Colloidal solutions were mixed with the Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) polymer to produce thin nanocomposite layers with specific optoelectronic properties. The electronic structure in terms of density of states (DOS) of MEH-PPV and MEH-PPV/nanocomposite layers was investigated by recently proposed energy resolved electrochemical impedance spectroscopy method. The MEH-PPV polymer and its nanocomposites with ZnO or CoxZn1-xO nanoparticles were used as thin active layers in polymer light emitting diodes (PLED). The nanocomposite layers exhibited optoelectronic properties which were found to be beneficial as the active layer in PLEDs, exhibiting an order of magnitude enhancement in electroluminescence intensity. A pronounced effect on the opening bias voltage of final devices with CoxZn1-xO nanoparticles was also observed.

Photoconductive Cathode Interlayer for Enhanced Electron Injection in Inverted Polymer Light-Emitting Diodes.

The cathode interlayer is of crucial importance for efficient electron injection in inverted polymer light-emitting diodes (PLEDs) to realize high electroluminescence efficiency. Here, a novel photoconductive cathode interlayer based on organic dye-doped ZnO (ZnO:PBI-H) is applied as the cathode buffer layer in PLEDs, and dramatically enhanced device performance is obtained. The photodoping of ZnO may greatly promote the electron injection ability under the device working conditions, which increases the electron-hole recombination efficiency when using P-PPV as the light-emitting material. Thanks to the decreased energy barrier between the cathode interlayer and the light-emitting layer, the turn-on voltage of the PLEDs is obviously reduced when using the photoconductive cathode interlayer. Our results indicate that photodoping of the cathode interlayer is a promising strategy to increase the interlayer performance in light-emitting diodes.

Synthesis, characterization, and fine turning of optical properties of soluble π-conjugated system with nitro-phenyl-activated 1, 3, 4-oxadiazole unit

A π-conjugated polymer, with nitro group in the main chain, poly(2-nitro-p-phenylene-1, 3, 4-oxadiazole) [PNPO], has been synthesized and characterized. Unlike many oxadiazole derivatives with poor solubility, this product exhibited good solubility in DMF, DMSO, and formamide. Its characterization has been done by FT-IR, 1H NMR, 13C-NMR, TGA, DSC, SEM, XRD, UV–Vis spectroscopy, fluorescence spectroscopy, and Z-scan measurement. PNPO showed excellent film-forming properties upon blending with 0.2 weight percentage of poly(methyl methacrylate)/poly(styrene). It has been observed to emit bluish green light with a maximum emission wavelength at 547–554 nm region. The further reduction of PNPO into nano-dimension has been found to enhance the emission maximum. Interestingly, PNPO exhibits good antimicrobial characteristics, under examination with E. coli and Staphylococcus. It has also been found to possess good thermal stability. PNPO has been proposed as an ideal candidate for making the active layers in polymer light-emitting diodes.

Light Emission Properties of a Cross-Conjugated Fluorene Polymer: Demonstration of Its Use in Electro-Luminescence and Lasing Devices

Light emission properties of a fluorene cross-conjugated polymer (PF–1) based on the monomer 4,7-bis[2-(9,9-dimethyl)fluorenyl] benzo[1,2,5]thiadiazole are reported. This polymer exhibits solubility at high concentrations, good processability into thin solid films of good quality and a broad emission band with a fluorescence quantum yield of approximately 1. Based on these features, in this paper we implemented the use of PF–1 as an active layer in polymer light-emitting diodes (PLEDs) and as a laser gain medium in solution. To get insight on the conducting properties of PF–1, two different electron injectors, poly [(9,9-bis(3′-(N,N-dimethylamino) propyl)-2,7-fluorene)-alt-2,7-(9,9–dioctylfluorene)] (PFN) and lithium fluoride (LiF), were used in a simple PLED architecture. PLEDs with the PFN film were found to exhibit better performance with a maximum luminous efficiency of 40 cd/A, a turn-on voltage (Von) of approximately 4.5 V and a luminance maximum of 878 cd/m2 at 5.5 V, with a current density of 20 A/m2. For the lasing properties of PF–1, we found a lasing threshold of around 75 μJ and a tunability of 20 nm. These values are comparable with those of rhodamine 6G, a well-known laser dye.

Triplet Exciton Transition Induced Highly Efficient Fluorescent Channel in Organic Electroluminescence

The injection of charge carriers from the electron/hole injection or transport layers in polymer light-emitting diodes potentially increases the device efficiency not by changing of charge intensity but by lattice distortion variation and quasi-particle interactions. From the low-dimensional condensed matter physics perspective, a valid mechanism is proposed to bring a type of novel channels that, under a proper external electric field, transition-forbidden triplet excitons are transformed and partially charged by charge carriers (polarons/bipolarons), thus are able to emit light and to enhance fluorescence greatly.

Improved efficiency in polymer light-emitting diodes using metal-enhanced fluorescence

Metal-enhanced fluorescence was realized in the emissive layer of organic electroluminescent devices. Core-shell Au nanoparticles (Au@SiO2) doped into the emissive layer of polymer light-emitting diodes (PLEDs) were used to enhance the luminous efficiency by a factor of 1.6 relative to the undoped reference devices (from 6.3 cd/A to 10.0 cd/A). The silica shell outside the Au nanoparticles was used to ensure that there was sufficient distance between the Au nanoparticles and the fluorescent polymer material to avoid quenching of the excitons. In addition, sufficient overlap of the energy of the localized surface plasmon resonance of the Au nanoparticles and the energy of the excitons formed in the emissive layer was guaranteed. These led to an enhanced PLED efficiency. This research provides a way to obtain high performance organic electroluminescent devices.

Imprinted nonoxidized graphene sheets as an efficient hole transport layer in polymer light-emitting diodes

Nonoxidized graphene sheets (NGSs) with single- and multilayered structures were generated by direct exfoliation of highly oriented pyrolytic graphite in a water-ethanol mixture with the assistances of pyridinium salt (Py+Br3–) and sonication. Raman spectrum exhibited a low intensity ratio (0.055) of D and G bands, indicating that the NGSs were nearly defect-free. Their application for the fabrication of polymer light-emitting diodes (PLEDs) was also demonstrated. The PLEDs that used an imprinted NGS film as a hole transport layer show a luminance exceeding 13000 cd/m2, which was comparable to that of devices using the typical hole transport material: poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid.

Synthesis and optoelectronic properties of amino-functionalized carbazole-based conjugated polymers

A series of alcohol soluble amino-functionalized carbazole-based copolymers were synthesized via Suzuki coupling reaction. The pendent amino groups endow them high solubility in polar solvents, as well as efficient electron injection capability from high work-function metals. The relationships between the photophysical and electrochemical properties and the polymer backbone structure were systematically investigated. These alcohol-soluble carbazole-based copolymers were used as cathode interlayers between the high work-function metal Al cathode and P-PPV emissive layer in polymer light-emitting diodes with device structure of ITO/PEDOT:PSS/P-PPV/interlayer/Al. The resulting devices exhibited improved performance due to the better electron injection/transporting ability of the designed copolymers from Al cathode to the light-emitting layer.

Study on the Optoelectronic Properties of UV Luminescent Polymer: ZnO Nanoparticles Dispersed PANI

The present work is focused on the synthesis and characterization of a new polymer thin film material suitable for emissive layer in polymer light-emitting diodes. Thin films of polyaniline and ZnO nanoparticles dispersed polyaniline have been prepared and investigated for the suitability of emissive layer in polymer light emitting diodes. ZnO nanoparticles have been synthesized using wet chemical method and characterized using powder X-ray diffraction. Diffraction pattern reveals that the ZnO nanoparticles are grown in hexagonal wurtzite structure with the preferential orientation of (001) plane. Polyaniline was synthesized using potassium persulphate (initiator) at room temperature. ZnO nanoparticles are then dispersed in different doping level (5%, 10%, 15% 20% and 50%) with polyaniline. Thin films of ZnO dispersed polyaniline (PANI/ZnO) were prepared and characterized using scanning electron microscopy in order to investigate the surface morphology of the film. The optical characteristics and the suitability of film as emissive layer were analyzed using UV-visible absorption and fluorescence spectroscopy.

All‐Conjugated Triblock Polyelectrolytes

All-conjugated triblock polyfluorenes with well-defined molecular weights and low polydispersities are synthesized via chain-growth Suzuki-Miyaura polymerization. Ionization of pendant alkylbromide chains by pyridine affords amphiphilic triblock polyelectrolytes with neutral/charged/neutral or charged/neutral/charged segments. The immiscible blocks lead to aggregation in polar and nonpolar solvents, and to complex surface morphologies depending on the polarity of the substrate. These triblock polyelectrolytes can also be used as interfacial layers in polymer light-emitting diodes to facilitate electron injection from aluminum.

Synthesis and Luminescence Property of Poly<i>(phenylenevinylene)</i> with Alkoxyl Substituents under the Ultrasonic Irradiation

In this paper, poly [(2-methoxyl-5-octyloxy) Phenylene Vinylene] (MO-PPV) was synthesized by Gilch route under ultrasonic irradiation. The molecular structure, thin film and luminescence property examined through FT-IR, SEm, AFM, UV-Vis spectroscopy and fluorescent spectroscopy, the results showed that the ‘cavitations effect’ caused by the ultrasonic irradiation not only accelerate the reaction speed but also reduce structural defects of the polymer thin film, the synthesized MO-PPV is free of gelatins which is harmful for the polymer’s thin films act as active layer in polymer light-emitting diodes (PLED).

Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes

We report a significant improvement in the performance of single layer polymer light-emitting diodes (PLEDs), based on the green emitting copolymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2, 1′,3}-thiadiazole)], upon inserting a very thin layer of partially reduced molybdenum oxide (MoOx, where x=2.7) at the polymer/Al cathode interface. Both fully oxidized (x=3) and partially reduced (x=2.7) thin molybdenum oxide layers were investigated as electron injection layers and their influence on PLED device performance was examined. Improved current density, luminance, and efficiency was achieved only in the case of devices with a thin partially reduced MoO2.7 film as electron injection layer, as a result of improved electron injection and more facile transfer at the modified polymer/Al interface.