Lateral Quantum Dot Research Articles

Electronic analogue of Fourier optics with massless Dirac fermions scattered by quantum dot lattice

Abstract The field of electron optics exploits the analogy between the movement of electrons or charged quasiparticles, primarily in two-dimensional materials subjected to electric and magnetic (EM) fields and the propagation of electromagnetic waves in a dielectric medium with varied refractive index. We significantly extend this analogy by introducing an electronic analogue of Fourier optics dubbed as Fourier electron optics (FEO) with massless Dirac fermions (MDF), namely the charge carriers of single-layer graphene under ambient conditions, by considering their scattering from a two-dimensional quantum dot lattice (TDQDL) treated within Lippmann–Schwinger formalism. By considering the scattering of MDF from TDQDL with a defect region, as well as the moiré pattern of twisted TDQDLs, we establish an electronic analogue of Babinet’s principle in optics. Exploiting the similarity of the resulting differential scattering cross-section with the Fraunhofer diffraction pattern, we construct a dictionary for such FEO. Subsequently, we evaluate the resistivity of such scattered MDF using the Boltzmann approach as a function of the angle made between the direction of propagation of these charge-carriers and the symmetry axis of the dot-lattice, and Fourier analyze them to show that the spatial frequency associated with the angle-resolved resistivity gets filtered according to the structural changes in the dot lattice, indicating wider applicability of FEO of MDF.

Magnetic Properties of A Cavity‐Embedded Square Lattice of Quantum Dots or Antidots

AbstractQuantum electrodynamical density functional theory is applied to obtain the electronic density, spin polarization, as well as orbital and spin magnetizations of square periodic arrays of quantum dots or antidots subjected to the influence of a far‐infrared cavity photon field. A gradient‐based exchange‐correlation functional adapted to a 2D electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non‐trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and spin magnetizations. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron–photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dot structure, while they weaken the paramagnetic effect in the antidot structure. As the number of electrons per unit cell of the lattice increases, the electron–photon interaction reduces the exchange forces that will otherwise promote strong spin splitting for both the dot and the antidot arrays.

Application of lateral flow immunochromatography assay, CRISPR/Cas12, and QDs-based biosensing for SARS-CoV-2 diagnosis

During the COVID-19 pandemic, scientists have developed many diagnostic techniques, such as biosensors, to detect whether a patient is infected by SARS-CoV-2. This could help the governments to plan an effective method to decrease the rate at which the illness is spreading across the globe. These diagnostic techniques are developed after the research of this foreign viral pathogen, SARS-CoV-2, by investigating the potential analytes that could be used and the various ways that the virus could infect a person after exposure. The three diagnostic techniques will be discussed in this paper, including lateral flow immunochromatography assay (LFIA), CRISPR/Cas12, and quantum dots (QDs)-based biosensing system. In addition, this research will also systematically discuss the advantages and disadvantages of these three monitoring and analysis methods. Although these three diagnostic techniques have very high selectivity and sensitivity, establishing a reliable result, there are pathogens that could result in similar symptoms of respiratory pneumonia just like SARS-CoV-2. The diagnostic techniques explained in this paper cant diagnose more than one pathogen or disease, therefore, it is essential to further develop a multiplexing assay to produce a more detailed result.

Lattice Mn2+ doped CdSe/CdS quantum dots for high-performance photoelectrochemical hydrogen evolution

Colloidal core/shell quantum dots (QDs) have emerged as a promising light absorber for hydrogen (H2) production in photoelectrochemical (PEC) cells due to their attractive optoelectronic properties. However, the unfavorable band alignment and lattice mismatch of core/shell materials lead to the sluggish separation/transfer of interfacial charges, challenging the large-scale utilization of QDs-based PEC systems. Herein, we report a unique synthetic approach that incorporates metal ions (Mn2+) into the lattice of heterostructured QDs in the process of shell growth, which is verified by the combined spectroscopic and electrochemical characterizations. The PEC cell based on the optimized QDs (Mn0.03-CdSe/CdS) exhibits a superior saturated photocurrent density (∼ 18.7 mA cm−2) to that of undoped CdSe/CdS QDs (∼ 9.6 mA cm−2) under one sun illumination. The introduced intragap states (4T1) from Mn2+ ions not only reduce the conduction band offset between CdSe and CdS, but also suppress the non-radiative recombination process of photogenerated charges. This work provides a well-grounded guide to utilize metal ions for improving the transfer dynamics of photogenerated charges of heterostructured QDs in other optoelectronic devices.

Theory of Excitons in Gated Bilayer Graphene Quantum Dots

We present a theory of excitons in gated bilayer graphene (BLG) quantum dots (QDs). Electrical gating of BLG opens an energy gap, turning this material into an electrically tunable semiconductor. Unlike in laterally gated semiconductor QDs, where electrons are attracted and holes repelled, we show here that lateral structuring of metallic gates results in a gated lateral QD confining both electrons and holes. Using an accurate atomistic approach and exact diagonalization tools, we describe strongly interacting electrons and holes forming an electrically tunable exciton. We find these excitons to be different from those found in semiconductor QDs and nanocrystals, with exciton energy tunable by voltage from the terahertz to far infrared (FIR) range. The conservation of spin, valley, and orbital angular momentum results in an exciton fine structure with a band of dark low-energy states, making this system a promising candidate for storage, detection and emission of photons in the terahertz range.

Non-adiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition.

In semiconductor spin qubits which typically interact through short-range exchange coupling, shuttling of spin is a practical way to generate quantum operations between distant qubits. Although the exchange is often tunable through voltages applied to gate electrodes, its minimal value can be significantly large, which hinders the applicability of existing shuttling protocols to such devices, requiring a different approach. In this work, we extend our previous results for double- and triple-dot systems, and describe a method for implementing spin state transfer in long chains of singly occupied quantum dots in a non-adiabatic manner. We make use of Cartan decomposition to break down the interacting problem into simpler problems in a systematic way, and use dynamical invariants to design smooth non-adiabatic pulses that can be implemented in devices with modest control bandwidth. Finally, we discuss the extensibility of our results to directed shuttling of spin states on two-dimensional lattices of quantum dots with fixed coupling. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.

Ge/Al and Ge/Si3N4/Al Core/Shell Quantum Dot Lattices in Alumina: Boosting the Spectral Response by Tensile Strain.

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/Si3N4/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self–assembled growth achieved by means of multilayer magnetron sputtering deposition. We demonstrated the successful fabrication of well-ordered 3D lattices of Ge/Al and Ge/Si3N4/Al core/shell quantum dots with a body-centred tetragonal arrangement within the Al2O3 matrix. The addition of shells to the Ge core enables a strong tuning of the optical and electrical properties of the material. An Al shell induces a bandgap shift toward smaller energies, and, in addition, it prevents Ge oxidation. The addition of a thin Si3N4 shell induces huge changes in the material spectral response, i.e., in the number of extracted excitons produced by a single photon. It increases both the absolute value and the width of the spectral response. For the best sample, we achieved an enhancement of over 250% of the produced number of excitons in the measured energy range. The observed changes are, as it seems, the consequence of the large tensile strain in Ge QDs which is induced by the Si3N4 shell addition and which is measured to be about 3% for the most strained QDs. The tensile strain causes activation of the direct bandgap of germanium, which has a very strong effect on the spectral response of the material.

The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

The Gaussian impurity effect on the electronic and magnetic properties of an electron confined in a lateral quantum dot

Water-Phase Lateral Interconnecting Quantum Dots as Free-Floating 2D Film Assembled by Hydrogen-Bonding Interactions to Acquire Excellent Electrocatalytic Activity.

Supramolecular self-assembly of nanoparticles in two orthogonal directions would potentially allow one to fabricate nanomaterials with fascinating properties. In this study of a hydrothermal polycondensation of melamine/cyanuric acid, graphitic carbon nitride-based quantum dots (CNQD, ∼2 nm) are in situ arranged along two orthogonal directions through lateral hydrogen bonding, and free-floating two-dimensional hydrogen-bonded films of CNQD (2D CNQD) are built. On the basis of the universality of this hydrothermal in situ supramolecular self-assembly technique, 2D films linked by other quantum dots such as sulfur-doped graphitic carbon nitride and CdTe are also constructed. With the benefits of stimuli responsiveness and the reversibility of hydrogen bonds, controllable assembly/disassembly of the 2D CNQD film is feasibly achieved by external stimuli such as inletting CO2/N2, which endows the assembled 2D CNQD films optimal electrochemical superiorities of both 2D film and zero-dimensional (0D) quantum dots. Accordingly, the 2D CNQD film delivers a high bifunctional activity in both a nitrogen reduction reaction (NRR) and an oxygen evolution reaction (OER). Especially in NRR, it exhibits the high yield rate of NH3 reaching 75.07 μg h-1 mg-1 at -0.85 V versus reversible hydrogen electrode at ambient condition. Strikingly, the power density of the rechargeable Zn-N2 battery using 2D CNQD film as cathode reaches 31.94 mW cm-2, outperforming the majority of Zn-N2 batteries. Density functional theory calculations proved the promoted adsorption of N2 and stabilized NRR intermediates on 2D CNQD cooperated by multiply hydrogen-bonding interactions are the main reasons for the excellent NRR electrocatalytic performances. This work hints that hydrothermal in situ supramolecular self-assembly is a feasible and direct way to integrate 0D quantum dots into 2D directional arrays, and the hydrogen bond that interlinks enables this free-floating 2D structure to maintain the electrochemical superiority of both 0D and 2D structures.

Quantum Dot Acceptors in Two-Dimensional Epitaxially Fused PbSe Quantum Dot Superlattices.

Oriented attachment of colloidal quantum dots allows the growth of two-dimensional crystals by design, which could have striking electronic properties upon progress on manipulating their conductivity. Here, we explore the origin of doping in square and epitaxially fused PbSe quantum dot superlattices with low-temperature scanning tunneling microscopy and spectroscopy. Probing the density of states of numerous individual quantum dots reveals an electronic coupling between the hole ground states of the quantum dots. Moreover, a small amount of quantum dots shows a reproducible deep level in the band gap, which is not caused by structural defects in the connections but arises from unpassivated sites at the {111} facets. Based on semiconductor statistics, these distinct defective quantum dots, randomly distributed in the superlattice, trap electrons, releasing a concentration of free holes, which is intimately related to the interdot electronic coupling. They act as acceptor quantum dots in the host quantum dot lattice, mimicking the role of dopant atoms in a semiconductor crystal.

Anisotropic g -tensors in hole quantum dots: Role of transverse confinement direction

Qubits encoded in the spin state of heavy holes confined in Si- and Ge-based semiconductor quantum dots are currently leading the efforts toward spin-based quantum information processing. The virtual absence of spinful nuclei in purified samples yields long qubit coherence times and the intricate coupling between spin and momentum in the valence band can provide very fast spin-orbit-based qubit control, e.g., via electrically induced modulations of the heavy-hole $g$-tensor. A thorough understanding of all aspects of the interplay between spin-orbit coupling, the confining potentials, and applied magnetic fields is thus essential for the development of the optimal hole-spin-based qubit platform. Here we theoretically investigate the manifestation of the effective $g$-tensor and effective mass of heavy holes in two-dimensional hole gases as well as in lateral quantum dots. We include the effects of the anisotropy of the effective Luttinger Hamiltonian (particularly relevant for Si-based systems) and we focus on the detailed role of the orientation of the transverse confining potential. We derive general analytic expressions for the anisotropic $g$-tensor and we present a general and straightforward way to calculate corrections to this $g$-tensor for localized holes due to various types of spin-orbit interaction, exemplifying the approach by including a simple linear Rashba-like term. Our results thus contribute to the understanding needed to find optimal points in parameter space for hole-spin qubits, where confinement is effective and spin-orbit-mediated electric control over the spin states is efficient.

Correlation-induced d -wave pairing in a quantum dot square lattice

We consider an electrostatically induced square lattice of quantum dots and study the role of electron-electron correlations in the resulting electronic features of the system. We utilize the Wannier functions methodology in order to construct Hamiltonian for interacting fermions and find that the change of the depth of the quantum dot confining potential results in a transition from a moderately-, to strong-correlated regime of the system. We obtain the approximate ground state by means of Variational Monte-Carlo method for a wide range of dopings. The values of microscopic parameters, charge gap as well as spin- and pair-correlation functions obtained in the strongly-correlated regime signify the presence of antiferromagnetic spin-ordering and the realization of the Mott insulator phase. Moreover, we report on a two dome structure of the emerging $d$-wave paired state residing on both sides of the half filled case. The obtained results are discussed in view of the well known families of unconventional superconducting materials such as copper based compounds.

Detection of photogenerated single electrons in a lateral quantum dot with a surface plasmon antenna

Electron spins in gate-defined lateral quantum dots (QDs) are a suitable platform for qubits and have the capacity for coherent coupling to free-space photons. Superposition state transfer from single photon polarizations to single spins has been realized using a GaAs gate-defined QD. However, its efficiency is limited by the small size of the QDs. Here, we use a surface plasmon antenna on a GaAs gate-defined QD and demonstrate that the photoelectron detection probability is enhanced by 5.3–9.2 times. This result contributes to the development of photon–spin quantum interface using gate-defined lateral QDs.

Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots.

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the gfactor. The measured gfactor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk gfactor. Experimental detection and identification of minute band-structure effects in the gfactor is of significance for spin qubits in GaAs quantum dots.

Artificial Graphene on Si Substrates: Fabrication and Transport Characteristics.

Artificial graphene (AG) based on a honeycomb lattice of semiconductor quantum dots (QDs) has been of great interest for exploration and applications of massless Dirac Fermions in semiconductors thanks to the tunable interplay between the carrier interactions and the honeycomb topology. Here, an innovative strategy to realize AG on Si substrates is developed by fabricating a honeycomb lattice of Au nanodisks on a Si/GeSi quantum well. The lateral potential modulation induced by the nanoscale Au/Si Schottky junction results in the formation of quantum dots arranged in a honeycomb lattice to form AG. Nonlinear current-voltage curves of the AG reveal conductance phase transitions with switch on/off voltages, a large electric hysteresis loop, and a strong sharp current peak accompanied by a group of differential-conductance peaks and negative differential conductance around the switch-on voltage, which can be modulated by temperature and light. These features are interpreted by a model based on the Coulomb blockade effect, the collective resonant tunneling, and the coupling of holes in the AG. Our results not only demonstrate an approach to the formation but also will greatly stimulate the characterizations and the applications of innovative semiconductor-based AG.

Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin-flipping tunneling processes.

Characterization of a surface plasmon antenna fabricated on a gate-defined lateral quantum dot

Quantum repeater composed of a quantum memory and an interface between photon qubits and memory qubits is indispensable for long-distance quantum communication. Gate-defined lateral quantum dots (QDs) can be a suitable platform for such quantum repeaters because of its aptitude for spin qubit and feasibility of quantum state transfer from photon polarization to electron spin. So far, the reported photoelectron excitation probabilities in such a QD are not high enough to implement practical repeater protocols. To improve the photoexcitation probability, we combine a surface plasmon antenna (SPA) with QDs. We fabricated a SPA designed to enhance the optical transmission to the QDs in a practical illumination setup in a refrigerator and characterized the fabricated antenna by measuring photocurrents at room temperature.

Whispering gallery and surface mode of electrons in lateral and corrugated quantum dots

Quantum dots (QDs) are fundamental elements in the applications related to light–matter interaction, such as solar cells, lasers and sensors. Moreover, some modes of electrons including whispering galley modes (WGMs) and surface modes can be incorporated in many electronic systems, in high Q-resonators, and quantized reflection/transmission. Therefore, controlling and manipulating their energy spectra is vital. Here, we investigate energy spectra as well as WGM and surface mode of electrons in lateral and corrugated QDs. Although, lateral QDs are usually modelled by a 2D harmonic oscillator (with zero thickness), we show that even very small thickness of dots can change their energy spectra, also they can contain surface mode of electrons. Moreover, we investigate WGM in deformed QDs, and the dots which contain corners in their outermost region, and show that some degenerated points would be created. Meanwhile, in the corrugated QDs, the wavefunction would be distributed in the specific teeth based on its energy level.

Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency

Thin films comprising three dimensional germanium (Ge) quantum dot lattices formed by nitrogen (N) assisted magnetron sputtering deposition in alumina (Al2O3) matrix have been studied for light harvesting purposes. In order to expand the application of this material it is necessary to reduce germanium oxidation and to achieve stabilization of the germanium/alumina interface. Effects of tuning the N concentration, substrate temperature and Ge sputtering power during the films preparation are monitored. It is shown that the N presence not only reduces Ge oxidation during annealing but also affects the internal structure, size and arrangement of Ge quantum dots. Additionally, the deposition temperature and Ge sputtering power are used to tune the Ge quantum dot size, separation and the regularity of their positions. It is shown that the optical and electrical properties of the films, especially their photo-induced current, and quantum efficiency are strongly tunable by the deposition conditions. Moreover, a significant photo-response and effect of multiple exciton generation effect is observed. The materials presented could be used as a sensitive layer for photodetectors or photovoltaic light harvesting devices. The presented tools can be used for future fine tuning of the material to achieve the optimal quantum efficiency.

Real-time tracking of the self-assembled growth of a 3D Ge quantum dot lattice in an alumina matrix

A laboratory in situ grazing-incidence small-angle X-ray scattering (GISAXS) tracking of the self-assembled growth of a regular 3D Ge quantum dot (QD) structure in an amorphous Al2O3 matrix during the ion beam sputter deposition of a periodic Ge/Al2O3 multilayer on silicon is reported. A 573 K substrate temperature proved to be necessary to achieve the self-assembly effect. Relying on a fast repeated acquisition of GISAXS patterns, the temporal evolution of the growing 3D Ge QD structure was analyzed bilayer by bilayer to determine its type, lateral and vertical correlation lengths, and inter-QD distance. The QD structure was found to have body-centered tetragonal lattice type with ABA stacking, with the lattice parameters refined by fitting the final GISAXS pattern relying on a paracrystal model. A single set of paracrystal parameters enables one to simulate the temporal evolution of the in situ GISAXS patterns throughout the deposition process, suggesting that the Ge QD self-assembly is driven from the very beginning solely by the growing surface morphology. Ex situ GISAXS and X-ray reflectivity measurements along with a cross-section high-resolution transmission electron microscopy analysis complete the study.