AbstractAurivillius phase Bi5CrxFe1−xTi3O15 (0≤ x ≤1) thin films are prepared by the chemical solution deposition method, and the effect of Cr content on the microstructure, ferroelectric property, and electric transport behavior of Bi5CrxFe1−xTi3O15 films is investigated. X‐ray diffraction analysis shows that all of Bi5CrxFe1−xTi3O15 films are complete solid solution and maintain the Aurivillius structure. The replacement of Fe3+ with smaller Cr3+ decreases anisotropy and lattice aspect ratio in a‐b plane, which is minimized at the composition of Bi5Cr0.5Fe0.5Ti3O15. This changes the grain shape from sphere to plate, and Bi5Cr0.5Fe0.5Ti3O15 film consists of only plate‐like grains. Cr doping increases saturated polarization (Pm) and decreases coercive field (Ec). Cr doping increases Pm of Bi5CrxFe1−xTi3O15 film to 35 μC/cm2, but decreases Ec down to 125 kV/cm. A decrease in the lattice aspect ratio of a‐b plane promotes the alignment of ferroelectric dipoles under electric field. The frequency‐dependent dielectric property and the leakage current show that the plate‐like grains of Cr‐rich Bi5CrxFe1−xTi3O15 films suppress the transport of carriers from grains to grains and prevents a dramatic leakage current increase. The results of this study provide a design rule to control the ferroelectricity of Aurivillius phase Bi5CrxFe1−xTi3O15 thin films by modifying the composition and lattice aspect ratio.
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