Epitaxial Lateral Overgrowth Research Articles

The quality of epitaxial lateral overgrown diamond on substrate with laser-cut holes of varying shapes and side orientations

This study analyzes dislocation densities, stress levels, and crystal quality in the epitaxial lateral overgrowth (ELO) areas of CVD epitaxial layer on substrate with laser-cut holes of varying shapes and side orientations. It revealed that the shape and side orientation of holes on the substrate significantly impacted the quality of the ELO layers. Rectangular holes with the 〈100〉 crystal orientation on the sides favor improving the quality of CVD diamond. Under optimized conditions, the tensile stress of the ELO areas decreased as well as the dislocation density reduced to 3 × 105 cm−2, approximately 20 times lower than the non-ELO areas.

Geometrically Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN.

In this Letter, we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4° vicinal sapphire substrates by metal-organic vapor-phase epitaxy, with an initial high-temperature sapphire nitridation to control polarity. The material is then converted to a regular array of hexagonal pyramids by wet-etching in a KOH solution and subsequently regrown to coalesce the pyramids back into a smooth layer of improved crystal quality. The key points that enable this technique are the control of the array geometry, obtained by exploiting the anisotropic behavior of the wet-etch step, and the use of regrowth conditions that preserve the orientation of the pyramids' sidewalls. In contrast, growth conditions that cause an excessive expansion of the residual (0001̅) facets on the pyramids' tops cause the onset of a very rough surface morphology upon full coalescence. An X-ray diffraction study confirms the reduction of the threading dislocation density as the regrowth step develops. The analysis of the relative position of the 0002̅ GaN peak, with respect to the 0006 sapphire peak, reveals a macroscopic tilt of the pyramids, probably induced by the large off-axis substrate orientation. This tilt correlates very well with an anomalous broadening of the 0002̅ diffraction peaks at the beginning of the regrowth step.

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Three sets of InGaN/GaN nanowire (NW) heterostructures are grown on Si(111) substrates under different growth conditions. A quasi‐two‐dimensional p‐GaN layer is grown on top of those structures using the epitaxial lateral overgrowth (ELOG) technique. Finally, the light‐emitting diodes (LED) are fabricated using these hybrid nanostructures following standard fabrication techniques. Electroluminescence (EL) measurement confirmed the emission wavelengths of 530.0 nm (green), 608.3 nm (orange), and 632.5 nm (red). The knee voltages of the devices are estimated to be in the range of 2.18–2.89 V, with higher knee voltages for samples emitting lower wavelengths. Further analysis of forward bias electrical characteristics suggests the dominance of tunneling current and an increase in the defect density in the heterostructures emitting higher wavelengths.

Colloidal Synthesis of Cu3N Nanorods and Construction of Cu3N-Cu2O Heteronanostructures via Epitaxial Growth.

The synthesis of transition metal nitrides nanocrystals (TMNs NCs) has posed a significant challenge due to the limited reactivity of nitrogen sources at lower temperatures and the scarcity of available synthesis methods. In this study, we present a novel colloidal synthesis strategy for the fabrication of Cu3N nanorods (NRs). It is found that the trace oxygen (O2) plays an important role in the synthesis process. And a new mechanism for the formation of Cu3N is proposed. Subsequently, by employing secondary lateral epitaxial growth, the Cu3N-Cu2O heteronanostructures (HNs) can be prepared. The Cu3N NRs and Cu3N-Cu2O HNs were evaluated as precursor electrocatalysts for the CO2 reduction reaction (CO2RR). The Cu3N-Cu2O HNs demonstrate remarkable selectivity and stability with ethylene (C2H4) Faradaic efficiency (FE) up to 55.3%, surpassing that of Cu3N NRs. This study provides innovative insights into the reaction mechanism of colloidal synthesis of TMNs NCs and presents alternative options for designing cost-effective electrocatalysts to achieve carbon neutrality.

Interfacial improvement of diamond through epitaxial lateral overgrowth with periodic Ir/SiO2/Ir stripe mask

Epitaxial lateral overgrowth (ELO) of diamond film with SiO2 stripe mask has been carried out through microwave plasma chemical vapor deposition systems. To solve the peel-off of SiO2, this study evaluates different kinds of metal buffer layers and chooses Ir as the optimal metal. The effects of the interface feature of two types of stripe masks (Ir/SiO2 and Ir/SiO2/Ir stripes) on the internal stress status and the fluorescence properties are characterized. The optical image confirms that the diamond emerges in the interval of stripes at the initial growth stage and then forms a continuous film with smooth surface and step-flow mode after 37 h lateral overgrowth. Photoluminescence (PL) mapping demonstrates that the SiO2 mask is etched by H2 plasma and results in a high SiV− intensity, especially above the mask. The Ir cap layer on the Ir/SiO2 mask surface is effective in preventing the SiO2 from being etched in the plasma atmosphere, greatly alleviating the PL intensity of the SiV− color center compared with that of the Ir/SiO2 mask. In addition, the Ir cap layer can suppress the stress in the epitaxial layer. The findings of this study can advance the existing research on ELO technology and be potentially applied to vacancy-related color centers.

Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

Selective area growth and epitaxial lateral overgrowth (ELOG) of semipolar (101) GaN stripes are demonstrated on a trench patterned vicinal (001) Si substrate fabricated by a maskless photolithography‐based process. High precision alignment enables selective mask formation to one sidewall of the trench. Selective area growth of GaN stripes is conducted from the (111) plane sidewall of Si, and ELOG region reaches ≈13 μm. The ELOG GaN crystal is dislocation‐free at most areas. The semipolar GaN stripes with atomically flat surface morphology are uniformly obtained. Light‐emitting diode structures with InGaN/GaN multiple quantum wells are grown on the 13‐μm ELOG (101) GaN stripes and a single photoluminescence emission peaked at 485 nm is obtained, suggesting potential for the cost‐effective semipolar micro light‐emitting diode fabrication technologies.

Controlled formation of three-dimensional cavities during lateral epitaxial growth

Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure. Patterning the growth substrate with a mask before performing epitaxial growth offers additional degrees of freedom to engineer the structure and hence function of the semiconductor device. Here, we demonstrate that conditions exist where such epitaxial lateral overgrowth can produce complex, three-dimensional structures that incorporate cavities of deterministic size. We grow germanium on silicon substrates patterned with a dielectric mask and show that fully-enclosed cavities can be created through an unexpected self-assembly process that is controlled by surface diffusion and surface energy minimization. The result is confined cavities enclosed by single crystalline Ge, with size and position tunable through the initial mask pattern. We present a model to account for the observed cavity symmetry, pinch-off and subsequent evolution, reflecting the dominant role of surface energy. Since dielectric mask patterning and epitaxial growth are compatible with conventional device processing steps, we suggest that this mechanism provides a strategy for developing electronic and photonic functionalities.

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with z(xx)z¯\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$z(xx)\\overline{z }$$\\end{document} and z(yx)z¯\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$z(yx)\\overline{z }$$\\end{document} polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

The use of two-dimensional material like graphene to alleviate lattice mismatch has been an effective way to realize high-quality GaN on heterogeneous substrates. The lack of hanging bonds on the graphene surface provides a new attempt for epitaxial lateral overgrowth (ELOG). In this study, a hexagonal graphene mask was used for the growth of GaN, the graphene mask disappeared during the GaN growth process, but GaN still maintained the ELOG mode, and the threading dislocation density was significantly reduced. Raman and PL spectra demonstrated the stress relaxation in ELOG GaN and showed a stress relaxation of 0.157 GPa at the interface between the substrate and ELOG GaN. This study demonstrates the feasibility and advantages of graphene masks for nitrides and extends the research on stress relaxation of ELOG GaN using a graphene mask.

Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Smooth and crack-free (0002) AlN thick films (∼30 μm) were epitaxially grown on trench-patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy.

The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems

The separation of Ge and Si by an electrically isolating dielectric layer is essential to yield high efficiency for optical telecommunication applications and electronic applications such as Ge MOSFETs. Ge epitaxial lateral overgrowth (ELOG) is a promising approach to achieve Ge on Si separated by a thin dielectric layer. However, a general understanding of the anisotropic dynamics of ELOG Ge on Si is limited, which prevents its wide adoption. In this paper, we report how the orientation and width of the dielectric layer controls the ELOG. A competitive ELOG from perpendicular directions on a dielectric strip leads to a rapid growth along the long axis of the dielectric layer, or a mixed coalescence from perpendicular directions yielding various Ge confined configurations at the Ge/dielectric-layer interface. Especially, an angle of 7.5° between dielectric-layer and Si [110] axis shows the most pronounced unidirectional ELOG. ELOG disappears as the width of the dielectric mask exceeds 5.0 μm. The results reported here provide a general framework for ELOG of semiconductor materials.

Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111).

We use epitaxial lateral overgrowth (ELO) to produce semimetallic graphene nanostructures embedded in a semiconducting GaAs matrix for potential applications in plasmonics, THz generation and detection, and tunnel junctions in multijunction solar cells. We show that (1) the combination of low sticking coefficient and fast surface diffusion on graphene enhances nucleation selectivity at exposed regions of the substrate and (2) high growth temperatures favor efficient lateral overgrowth, coalescence, and planarization of epitaxial GaAs films over the graphene nanostructures. Our work provides a more complete understanding of ELO using graphene masks, as opposed to more conventional dielectric masks, and enables new types of metal/semiconductor nanocomposites.

Lateral epitaxial growth of two-dimensional organic heterostructures.

Two-dimensional organic lateral heterostructures (2D OLHs) are attractive for the fabrication of functional materials. However, it is difficult to control the nucleation, growth and orientation of two distinct components. Here we report the combination of two methods-liquid-phase growth and vapour-phase growth-to synthesize 2D OLHs from perylene and a perylenecarboxaldehyde derivative, with a lateral size of ~20 μm and a tunable thickness ranging from 20 to 400 nm. The screw dislocation growth behaviour of the 2D crystals shows the spiral arrangement of atoms within the crystal lattice, which avoids volume expansion and contraction of OLH, thereby minimizing lateral connection defects. Selective control of the nucleation and sequential growth of 2D crystals leads to structural inversion of the 2D OLHs by the vapour-phase growth method. The resulting OLHs show good light-transport capabilities and tunable spatial exciton conversion, useful for photonic applications. This synthetic strategy can be extended to other families of organic polycyclic aromatic hydrocarbons, as demonstrated with other pyrene and perylene derivatives.

Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applications

Wafer‐scale heteroepitaxial diamond thin films demonstrate multiple advantages for a further development of integrated optical and quantum devices based on impurity–vacancy color centers. The main obstacle here is a high structural defect density characteristic for heteroepitaxial epilayers. In this work, technological methods of stress control, NV formation, and defect density reduction in diamond epilayers, which are based on principles of epitaxial lateral overgrowth (ELO) are reported on. Herein, material and quantum properties of NV‐doped diamond thin films obtained by patterned nucleation growth and by ELO of microstructured epilayers, are compared. It is demonstrated that a combination of both methods might have a significant potential for the wafer‐scale production of heteroepitaxial diamond for quantum devices.

Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga2O3 Grown by Epitaxial Lateral Overgrowth

The properties of orthorhombic κ-Ga2O3 films grown by Epitaxial Lateral Overgrowth (ELOG) were studied by Scanning Transmission Electron Microscopy (STEM), X-ray diffraction, capacitance-voltage profiling, Microcathodoluminescence (MCL) spectroscopy and imaging. ELOG mask was formed by deposition of SiO2 stripes on TiO2 buffer prepared on basal plane sapphire, with the stripes going along the [110] direction of sapphire. κ-Ga2O3 ELOG growth was performed using Halide Vapor Phase Epitaxy (HVPE), with ELOG wing of the structure formed by lateral overgrowth over the 20 μm-wide SiO2 stripes, while growth in between the stripes proceeded initially by vertical growth in the 5-μm-wide windows. TEM analysis showed that the material in the windows comprised 120o rotational nanodomains typical of κ-Ga2O3, while, in the wing regions, the material was single-domain monocrystalline. The films were conducting, with the net donor density close to 1013 cm−3. The data suggested the material in the windows have much higher resistance than in the wings. MCL spectra and imaging revealed much higher density of nonradiative recombination centers in the windows than in the wings.

Remote epitaxial interaction through graphene.

The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

AbstractThe structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface.

Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes

AbstractMonolithic multi‐color light‐emitting diodes (LEDs) offer numerous advantages as multi‐functional lighting sources. However, the achievement of full‐color monolithic LEDs spanning from red to blue wavelengths is limited by the InN‐GaN material system. To overcome this limitation, this work demonstrates a new approach using hexagonal epitaxial lateral overgrowth to reduce the density of crystal defects and form micro‐surface structures. By utilizing arrowhead‐like surfaces in semipolar GaN films, indium incorporation can be controlled, leading to larger band‐filling effects and enabling full‐color red, green, and blue emissions from a single LED. Nonetheless, the red emission in monolithic full‐color LEDs is weaker than the blue emission due to the band‐filling induced blueshift that occurs with increasing current injection. To address this issue, pulse amplitude modulation and pulse width modulation modes are introduced to control the emission intensity from red to blue wavelengths. As a result, the study achieves a monolithic trichromatic white LED with color coordinates of (0.2985, 0.3948) and a color temperature of ≈6700 K by simultaneously emitting red, green, and blue LEDs with the same emission intensities. This achievement holds great promise for the development of high‐performance full‐color LEDs for multifunctional lighting sources that can span red, green, and blue wavelengths.

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

We demonstrate that the dislocation density in α-Ga2O3 epilayers is markedly reduced via rapid growth at low temperatures by halide vapor-phase epitaxy. An α-Ga2O3 epilayer grown on (0001) sapphire at a high growth rate of 34 μm h−1 and a low temperature of 463 °C exhibited a dislocation density of 4 × 108 cm−2, which was approximately 1/100 of that in a conventional film. It is likely that the three-dimensional surface morphology developed during the growth enhanced the bending of the dislocations to increase the probability of pair annihilation. The combination of this technique with thick film growth and epitaxial lateral overgrowth resulted in a further low dislocation density of 1.1 × 107 cm−2.