Lateral Carrier Diffusion Research Articles

Measurement of local recombination activity in high diffusion length semiconductors

We present a conceptual approach for the localisation and characterisation of local sites of recombination in high diffusion length semiconductors under photovoltaic field conditions. While established imaging techniques operate in this very regime of uniform “1 sun” illumination, inevitable lateral diffusion of charge carriers veils the origin and severity of localised recombination sites. To reduce this limitation due to lateral diffusion the natural choice is using focussed charge carrier excitation and detection in combination with scanning the specimen. The resulting photoluminescence intensity maps are of high spatial resolution and may be composed of a superposition of a multitude of recombination active defects influencing each other due to the high bulk diffusion length. We demonstrate the feasibility of a self-consistent calibration of the setup quantum efficiency in such experimental condition which delivers a charge carrier density map in absolute units. A solution is presented to disentangle the superposition of local sites of recombination to isolate the actual recombination activity of every site. We demonstrate the feasibility of the approach experimentally on the high diffusion length semiconductor silicon.

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes.

We report on III-nitride-based micro-light-emitting diodes (µLEDs) operating at 450 nm wavelength with diameters down to 2 µm. Devices with a standard LED structure followed by a tunnel junction were grown by plasma-assisted molecular beam epitaxy. The emission size of µLEDs was defined by shallow He+ implantation of the tunnel junction region. The ion implantation process allows to create flat devices, applicable to further epitaxial regrowth. The shift of current density for the maximum external quantum efficiency as a function of µLEDs diameter was observed. This effect may be a fingerprint of the change in the external efficiency related to the lateral carrier diffusion (limited by holes) in InGaN quantum wells.

Generalized focal plane array modulation transfer function estimation approach for nonstationary laser speckle random processes

The infrared (IR) imaging community has a need for direct IR detector evaluation due to the continued demand for small pixel pitch detectors, the emergence of strained-layer-superlattice devices, and the associated lateral carrier diffusion issues. Conventional laser speckle-based modulation transfer function estimation is dependent on Fresnel propagation and limited to paraxial geometries, preventing the utilization of this approach on small pixel pitch IR devices. This paper presents a generalized approach for determining a focal plane array (FPA) system input power spectral density, utilizing numerical evaluation of Rayleigh–Sommerfeld speckle irradiance autocorrelation functions, speckle irradiance spectral analysis using the Wigner distribution function, and experimental error quantification incurred from making wide-sense-stationary assumptions regarding the associated laser speckle random process. The effort’s final result is an experimental demonstration of an FPA resolution estimation technique valid in nonparaxial test scenarios.

Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm–4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.

Influence of transverse carrier diffusion on two-dimensional optical rogue waves in broad-area semiconductor lasers with a saturable absorber

The statistics and dynamics of two-dimensional rogue waves in a broad-area semiconductor laser with an intracavity saturable absorber are numerically investigated under the effect of transverse carrier diffusion. We show that lateral diffusion of carriers alters the statistics of rogue waves by enhancing their formation in smaller ratios of carrier lifetimes in active and passive materials while suppressing them when the ratio is larger. The temporal dynamics of the emitted rogue waves is also studied and show that the finite nonzero transverse carrier diffusion coefficient gives them a longer duration. To further approach a realistic experimental situation, we also investigate the statistics and dynamics of rogue waves by simulating a circular disk-shape pump which replaces the flat pump profile typically used in numerical simulations of broad-area lasers. We show that a finite pump shape reduces the number of emitted rogue waves per unit area both below and above the laser threshold for every carrier lifetime ratio. The temporal width of the emitted rogue waves is also shown to decrease as a consequence of removing the nonphysical effects of the infinite flat pump on carrier dynamics.

Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in ( In , Ga ) N and ( Al , Ga ) N Single Quantum Wells

For nitride-based $(\mathrm{In},\mathrm{Ga})\mathrm{N}$ and $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$ quantum-well (QW) light-emitting diodes (LEDs), the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the overall LED efficiency through sidewall nonradiative recombination, especially for $\ensuremath{\mu}\mathrm{LEDs}$. In this paper, we study the carrier lateral diffusion length for nitride-based green, blue, and ultraviolet C (UVC) QWs in three dimensions. We solve the Poisson and drift-diffusion equations in the framework of localization landscape theory. The full three-dimensional model includes the effects of random alloy composition fluctuations and electric fields in the QWs. The dependence of the minority carrier diffusion length on the majority carrier density is studied with a full three-dimensional model. The results show that the diffusion length is limited by the potential fluctuations and the recombination rate, the latter being controlled by the spontaneous and piezoelectric fields in the QWs and by the screening of the internal electric fields by carriers.

Honeycomb meshed working electrodes based on microsphere lithography for high-resolution chemical image sensor

The chemical image sensor has attracted much attention because of its ability to visualize the spatial distribution of biochemical species in solution. However, the lateral diffusion of photo-generated carriers generated by illuminating backside of the substrate limits the spatial resolution of the sensor and the sharpness of the image. In this study, honeycomb meshed metal array based on microsphere lithography as working electrodes of the sensor is proposed. A focused light spot illuminates a plurality of periodic and ordered mesh holes and the metal electrodes adjacent to the mesh holes. For chemical imaging performance, sensors with honeycomb meshed working electrodes are developed for comparison with the sensor the flat working electrodes, and their spatial resolution is tested under the focused light spot with different sizes. Three interpretations of improved spatial resolution including enhanced recombination of the photo-generated holes by electrons during the initial stage of lateral diffusion and two boundary cases of modulated light illuminating meshed working electrodes on the substrate are elaborated. The experimental results show that the spatial resolution of sensor chips with honeycomb meshed working electrodes is better than that of the sensor with the flat working electrodes and is higher under the illumination condition of smaller light spots.

A High-Resolution Microfluidic LAPS Imaging System for 3D Cell Metabolism Monitoring

A High-Resolution Microfluidic LAPS Imaging System for 3D Cell Metabolism Monitoring

Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model

Electroluminescence of porous silicon carbide is achieved in a forward-biased SiC p–i–n junction. A broad green spectral feature centered at ∼510 nm is shown to arise from porous SiC. A large SiC surface area in the vicinity of the junction is created by diamond cutting followed by an electrochemically enhanced hydrogen fluoride etch that produces a layer of porous SiC. Photoluminescence is shown not to be responsible for the green emission. This supports the model of carrier recombination at the porous region via lateral bipolar diffusion of carriers. A lateral bipolar diffusion model is presented in which mobile carriers diffuse laterally from the junction toward the porous SiC surface region driven by a lateral carrier concentration gradient. Lateral bipolar diffusion in conjunction with suitable radiative recombination centers provides a possible pathway to achieve high quantum efficiencies in future SiC p–n homojunction or double heterojunction light-emitting diodes. Competing recombination processes and associated ideality factors in 4H-SiC diodes are also examined.

Morphology Tuning and Its Role in Optimization of Perovskite Films Fabricated from A Novel Nonhalide Lead Source.

Usage of nonhalide lead sources for fabricating perovskite solar cells (PSCs) has recently attracted increasing attention as a promising route toward realizing high quality PSC devices. However, the unique role of nonhalide lead sources in improving perovskite film morphology and PSC performance has largely remained unexplored, impeding broader application of these materials. Here, it is demonstrated that by using a new nonhalide lead source, lead formate (Pb(HCOO)2), good control of perovskite film morphology can be achieved. With the usage of lead formate, PbI2 can nicely border the perovskite grain boundaries (GBs) and form domain “walls” that segregate the individual perovskite crystal domains. The PbI2 at the GBs lead to significant improvement in film quality and device performance through passivating the defects at the perovskite GBs and suppressing lateral carrier diffusion. An impressive carrier lifetime at the microsecond scale (τ 2 = 1714 ns) is achieved, further with an optimal power conversion efficiency of 20.3% for the resulting devices. This work demonstrates a promising and effective method toward fabricating high‐quality perovskites and high‐efficiency PSCs.

High-resolution light-activated electrochemistry on amorphous silicon-based photoelectrodes.

Light-activated electrochemistry (LAE) consists of employing a focused light beam to illuminate a semiconducting area and make it electrochemically active. Here, we show how to reduce the electrochemical spatial resolution to submicron by exploiting the short lateral diffusion of charge carriers in amorphous silicon to improve the resolution of LAE by 60 times.

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

We investigated the lateral distribution of the equilibrium carrier concentration (n0) along the channel and the effects of channel length (L) on the source-drain series resistance (Rext) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n0 across the channel was extracted using the paired gate-to-source voltage (VGS)-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different Ls. n0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n0 was observed in the region near the middle of the channel. The effect of L on the Rext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various Ls. The increase of Rext was clearly observed with an increase in L especially at low VGSs, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high Rext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs.

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits.

The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory

An approach that determines the charge carrier lifetime from photoluminescence (PL) imaging that is virtually not affected by lateral charge carrier drift and diffusion and image smearing due to photon scattering is proposed. The approach attempts to create a laterally uniform charge carrier density within a sample with non‐homogeneous recombination properties via illumination with spatially varying intensity. Lateral excess charge carrier drift and diffusion is inherently absent in this situation. Furthermore, as a homogeneous PL intensity is monitored, any optical artefact induced by photon scattering in the investigated wafer or the detection charge‐coupled device is strongly suppressed compared to conventional PL imaging. Using numeric simulations of different lifetime distribution scenarios, including one based on measured micro‐photoluminescence (μ‐PL) lifetime data, we demonstrate the feasibility of this proposed “Adaptive Excitation Photoluminescence Imaging” (Ax‐PLI) method.

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques

We applied time-resolved pump-probe spectroscopy based on free carrier absorption and light diffraction on a transient grating for direct measurements of the carrier lifetime and diffusion coefficient D in high-resistivity single crystal CdTe (codoped with In and Er). The bulk carrier lifetime τ decreased from 670 ± 50 ns to 60 ± 10 ns with increase of excess carrier density N from 1016 to 5 × 1018 cm−3 due to the excitation-dependent radiative recombination rate. In this N range, the carrier diffusion length dropped from 14 μm to 6 μm due to lifetime decrease. Modeling of in-depth (axial) and in-plane (lateral) carrier diffusion provided the value of surface recombination velocity S = 6 × 105 cm/s for the untreated surface. At even higher excitations, in the 1019–3 × 1020 cm−3 density range, D increase from 5 to 20 cm2/s due to carrier degeneracy was observed.

Carrier diffusion in thin-film CH3NH3PbI3 perovskite measured using four-wave mixing

We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers utilizing the transient grating technique, coupled with the simultaneous measurement of decay kinetics exploiting the versatility of the boxcar excitation beam geometry. The observation of the exponential decay of the transient grating versus interpulse delay indicates diffusive transport with negligible trapping within the first nanosecond following excitation. The in-plane transport geometry in our experiments enabled the diffusion length to be compared directly with the grain size, indicating that carriers move across multiple grain boundaries prior to recombination. Our experiments illustrate the broad utility of FWM spectroscopy for rapid characterization of macroscopic film transport properties.

Modeling of recombination strength at grain boundaries after phosphorus diffusion gettering and the effect of hydrogen passivation

We present a method for extracting local recombination rates from photoluminescence images of double side passivated wafers, using simulations of lateral charge carrier diffusion in two dimensions. By fitting the simulated carrier lifetime map with a calibrated photoluminescence image, the recombination profiles in bulk and at grain boundaries (GBs) can be extracted. This method can be used to quantify the GB recombination velocity even if the carrier concentration in bulk is simultaneously affected by recombination at multiple GBs. High performance multicrystalline wafers from a commercially cast ingot with low impurity concentrations were studied. The GBs were completely passivated applying a hydrogenation step simulated contact firing of a hydrogen rich silicon nitride (SiN) film. The bulk carrier recombination profile from simulations of carrier diffusion after phosphorus diffusion gettering is similar to the measured lifetime after phosphorus diffusion gettering and firing. This indicates that the main role of hydrogen passivation is deactivation of the GB recombination. No additional enhancement of the bulk lifetime is observed after hydrogen passivation.

Correlating Photoluminescence Heterogeneity with Local Electronic Properties in Methylammonium Lead Tribromide Perovskite Thin Films

We conduct correlated laser scanning confocal photoluminescence (PL) microscopy, scanning kelvin probe microscopy, and conductive atomic force microscopy (c-AFM) to understand the origins and effects of local heterogeneity in films of the hybrid organic–inorganic perovskite semiconductor methylammonium lead tribromide (MAPbBr3). We compare PL between perovskite films deposited on glass and on hole-transporting contacts. In both systems, we observe heterogeneous PL, but this heterogeneity is due to different mechanisms. On glass substrates, we observe that the PL maps are dominated by lateral carrier diffusion, and on hole-transporting contacts, we observe an anticorrelation between PL and local hole injected current as measured by c-AFM. We conclude that the local variations are due to heterogeneous electronic coupling at the perovskite–electrode interface. We also show that correlated PL and AFM studies are expected to play a key role in studying the electronic heterogeneities in the perovskite itself, w...

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-quantum well (QD-QW) structures by means of spatially resolved photoluminescence spectroscopy at low temperature. Under non-resonant photo-excitation above the GaAs bandgap, the lateral carrier transport reflected in the distorted electron-hole pair emission profiles is found to be mainly governed by high energy carriers created within the 3D density of states of GaAs. In contrast, for the case of resonant excitation tuned to the QW-like ground state of the QD-QW system, the emission profiles remain unaffected by the excess kinetic energy of carriers and local phonon heating within the pump spot. The lateral diffusion lengths are determined and present certain dependency on the coupling strength between QW and QDs. While for a strongly coupled structure the diffusion length is found to be around 0.8 μm and monotonically increases up to 1.4 μm with the excitation power density, in weakly coupled structures, it is determined to ca. 1.6 μm and remained virtually independent of the pumping power density.

Theoretical study of time-resolved luminescence in semiconductors. IV. Lateral inhomogeneities

In the fourth part of this series, we study the impact of lateral inhomogeneities on the time-resolved luminescence decay (TRL) after a pulsed excitation by means of simulation with Synopsys® TCAD and analytical approximation. This work consists of two parts: In the first part, the effect of excitations being inhomogeneous on a lateral scale is investigated. It turns out that for localized excitations there may be a strong lateral diffusion of charge carriers, thereby limiting the resolution of a micro-TRL experiment. In this case, a replacement of the inhomogeneous excitation in the simulation by a homogeneous excitation and an average photon density is not possible, especially due to defect saturation depending non-linearly on the excitation. In the second part, we consider a homogeneous excitation and study inhomogeneous material parameters, namely, inhomogeneous charge carrier lifetimes, band gaps, and doping densities. We find that their effects strongly depend on their characteristic lengths of variation. For length scales smaller than the diffusion length, inhomogeneous material parameters can lead to curved luminescence decays.