Large Spin-orbit Torque Research Articles

Field-Free Spin-Orbit Torque Switching in Janus Chromium Dichalcogenides.

We predict a very large spin-orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm-1 in non-Janus CrTe2, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices in an ultracompact self-induced SOT scheme.

Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure.

The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field has not been examined, which hinders further applications. Here, the study demonstrates the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 × 1010 Am-2 at 300K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, it is found that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. The work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.

Colossal Orbital Current Induced by Gradient Oxidation for High-Efficiency Magnetization Switching.

Orbital angular momentum flow can be used to develop a low-dissipation electronic information device by manipulating the orbital current. However, efficiently generating and fully harnessing orbital currents is a formidable challenge. In this study, an approach is presented that induces a colossal orbital current by gradient oxidation in Pt/Ta to enhance spin-orbit torque (SOT) and achieve high-efficiency magnetization switching. The maximum efficiency of the SOT before and after the gradient oxidation of Ta is improved relative to that of Pt by ≈600 and 1200%, respectively. The large SOT originates from the colossal orbital current because of the orbital Rashba-Edelstein effect induced by the gradient oxidation of Ta. In addition, a large spin-to-charge conversion efficiency is observed in yttrium iron garnet/Pt/TaOx because of the inverse orbital Rashba-Edelstein effect. Harnessing the orbital current can help effectively minimize the critical current density of the current-induced magnetization switching to 2.26-1.08 × 106 Acm-2, marking a 12-fold reduction compared to that using Pt. This findings provide a new path for research on low-dissipation spin-orbit devices and improve the tunability of orbital current generation.

Wafer-scale synthesis of 2D PtTe2 thin films with high spin–orbit torque efficiency

Spintronic devices have become a crucial technology for overcoming the power consumption bottleneck in integrated circuits, due to their low power consumption, high-speed processing capability. Two-dimensional materials offer potential for performance enhancement and device miniaturization in spintronics because of their unique electronic and spin properties. Specifically, two-dimensional transition metal dichalcogenides (2D TMDs) are favored in the field of spintronics for their strong spin–orbit coupling effects, enabling effective control over the electron spin state. However, the preparation techniques for 2D TMDs are still in the exploratory stage. In this work, we explore novel preparation method combining magnetron sputtering and molecular beam epitaxy, leading to wafer-scale high-quality monocrystalline PtTe2 thin films. Further, Spin-Orbit Torque (SOT) efficiency is investigated in PtTe2-based heterostructures, which reveals a significant spin Hall angle of over 0.094. Our work provides a new way to fabricate the wafer-scale PtTe2 thin films and confirms a large SOT efficiency, which indicates the great promise for spintronic applications.

Large spin–orbit torque in bismuthate-based heterostructures

Large spin–orbit torque in bismuthate-based heterostructures

Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Large spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with ferromagnets are promising for next-generation magnetic memory and logic devices. SOTs generated from y spin originating from spin Hall and Edelstein effects can realize field-free magnetization switching only when the magnetization and spin are collinear. Here we circumvent the above limitation by utilizing unconventional spins generated in a MnPd3 thin film grown on an oxidized silicon substrate. We observe conventional SOT due to y spin, and out-of-plane and in-plane anti-damping-like torques originated from z spin and x spin, respectively, in MnPd3/CoFeB heterostructures. Notably, we have demonstrated complete field-free switching of perpendicular cobalt via out-of-plane anti-damping-like SOT. Density functional theory calculations show that the observed unconventional torques are due to the low symmetry of the (114)-oriented MnPd3 films. Altogether our results provide a path toward realization of a practical spin channel in ultrafast magnetic memory and logic devices.

Large spin hall conductivity in low-symmetry semiconductor ZrSe3

Spin-orbit torques (SOTs) in two-dimensional (2D) transition-metal dichalcogenides (TMDs) based on magnetic heterostructures have drawn extensive attentions owning to their potential applications in spintronic devices. Here, we investigated the current-induced SOTs in ZrSe3, which is a 2D van der Waals semiconductor characterized by both strong spin-orbit coupling and broken crystal symmetry. A large SOT efficiency along with an out-of-plane damping-like torque is achieved, when the charge current is applied along the low symmetry crystal axis of ZrSe3. Significantly, the SOT efficiency we detected from ZrSe3 (7.6 nm)/ Py(10 nm) device is up to 2.67, corresponding to a large spin Hall conductivity of 377.1 × 103ℏ/2e (Ω·m)−1. Such a large spin Hall conductivity is superior to most of the conventional heavy metals, TMDs and topological insulators. Thickness dependence study further demonstrates the main contribution to the large SOTs is bulk spin Hall effect in ZrSe3. Combining the notable out-of-plane damping-like SOT with high spin Hall conductivity, our study provides a new strategy for low-power SOT devices based on 2D semiconductors.

Nucleation and manipulation of single skyrmions using spin-polarized currents in antiferromagnetic skyrmion-based racetrack memories

In this work, an ultrafast nucleation of an isolated anti-ferromagnetic (AFM) skyrmion was reported in an AFM layer with DMi strengths of 0.47-0.32 mathrm{mJ}/{mathrm{m}}^{2} using spin-transfer torque by locally injecting pure spin currents into magnetic tracks. Besides, we revealed the key advantages of AFM skyrmion-based racetrack memories by comparing the motion of AFM and FM skyrmions driven by spin–orbit torques (SOTs) for different skyrmion sizes along racetrack memories with various notch sizes. Our results indicate that for AFM skyrmion, the skyrmion Hall effect does not exist during the skyrmion motion, therefore at small skyrmion sizes, we succeeded to overcome the repulsive forces developed in the notch area for low and large SOTs. The obtained findings were carefully analyzed by computing the variation of energy barriers associated with the notch for different skyrmion sizes using minimum energy path (MEP) calculations. We showed that the larger the skyrmion size, the harder it is to shrink the skyrmion in the notch which produces a high energy barrier (Eb) for large skyrmion sizes. Moreover, as the notch size increases, the skyrmion size shrinks further, and hence Eb increases proportionally. Nevertheless, we proved that AFM skyrmions are more efficient and flexible than FM skyrmions against boundary forces.

Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

AbstractComplex oxides hosting 4d and 5d cations with significant spin–orbit coupling have recently been shown as promising materials for efficient spin‐charge interconversion. Through interfacing 4d and 5d oxides with magnet layers, a large spin–orbit torque (SOT) is reported. However, a room‐temperature SOT switching of perpendicular magnetization by using these oxides, which is essential for spintronic devices, is not demonstrated. Here, this is addressed yet missing aspect by studying heterostructures comprised of two representative complex oxides (4d SrRuO3 and 5d SrIrO3) and a compensated ferrimagnet FeGd with perpendicular magnetic anisotropy. A room temperature current‐induced SOT switching of perpendicular magnetization in both SrRuO3/FeGd and SrIrO3/FeGd bilayers, with the critical switching current density on the order of 106 A cm−2 is demonstrated. The SOT efficiencies of SrRuO3 and SrIrO3 are further quantified by using harmonic Hall voltage measurements. The results suggest that the strongly correlated oxides could be another promising platform for enabling energy‐efficient spin‐orbitronic applications.

Spin–orbit torque generation in bilayers composed of CoFeB and epitaxial SrIrO3 grown on an orthorhombic DyScO3 substrate

We report on the highly efficient spin–orbit torque (SOT) generation in epitaxial SrIrO3 (SIO), which is grown on an orthorhombic DyScO3(110) substrate. By conducting harmonic Hall measurement in Co20Fe60B20 (CoFeB)/SIO bilayers, we characterize two kinds of the SOTs, i.e., dampinglike (DL) and fieldlike ones to find that the former is much larger than the latter. By comparison with the Pt control sample with the same CoFeB thickness, the observed DL SOT efficiency ξDL of SIO (∼0.32) is three times higher than that of Pt (∼0.093). The ξDL is nearly constant as a function of the CoFeB thickness, suggesting that the SIO plays a crucial role in the large SOT generation. These results on the CoFeB/SIO bilayers highlight that the epitaxial SIO is promising for low-current and reliable spin–orbit torque-controlled devices.

Engineering the Spin-Orbit-Torque Efficiency and Magnetic Properties of Tb / Co Ferrimagnetic Multilayers by Stacking Order

We measure the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of $\mathrm{Co}$/$\mathrm{Tb}$ layers with differing stacking order grown on a $\mathrm{Pt}$ underlayer. We find that the SOTs, magnetic anisotropy, compensation temperature, and SOT-induced switching are highly sensitive to the stacking order of $\mathrm{Co}$ and $\mathrm{Tb}$ and to the element in contact with $\mathrm{Pt}$. Our study further shows that $\mathrm{Tb}$ is an efficient SOT generator when in contact with $\mathrm{Co}$, such that its position in the stack can be adjusted to generate torques additive to those generated by $\mathrm{Pt}$. With optimal stacking and layer thickness, the dampinglike SOT efficiency reaches 0.3, which is more than twice that expected from the $\mathrm{Pt}$/$\mathrm{Co}$ bilayer. Moreover, the magnetization can be easily switched by the injection of pulses with current density of about (0.5--$2)\ifmmode\times\else\texttimes\fi{}{10}^{7}\phantom{\rule{0.2em}{0ex}}\mathrm{A}/{\mathrm{cm}}^{2}$ despite the extremely high perpendicular magnetic anisotropy barrier (up to 7.8 T). Efficient switching is due to a combination of large SOTs and low saturation magnetization owing to the ferrimagnetic character of the multilayers. We observe current-driven DW motion in the absence of any external field, which is indicative of homochiral N\'eel-type DWs stabilized by the interfacial Dzyaloshinkii-Moriya interaction. These results show that the stacking order in transition metal/rare-earth synthetic ferrimagnets plays a major role in determining the magnetotransport properties relevant for spintronic applications.

Growth-dependent structural ordering and stability in β-tungsten films for spintronic applications

The β phase of tungsten has attracted great interest for spintronic applications due to its higher spin Hall angle compared to other elemental solids and large spin–orbit torque, but the stability of this phase is yet to be well understood as many different results are there in the literature mainly based on the film thickness, temperature, and overall growth conditions. The growth of films by sputter deposition has emerged as a promising technique to achieve β-W owing to its compatibility with current spintronic technology. We demonstrate here the efficient ability of dc magnetron sputtering to grow stable β-W films up to a thickness of ∼180 nm at room temperature by varying a set of deposition parameters like pressure, power, and deposition time and discuss the various underlying mechanisms. From these results, the optimized set of deposition parameters for growing β-W films is given. A clear understanding of the influence of oxygen in the atomic structure of β-W is obtained by varying the thickness of the films. This is confirmed from the ab initio molecular dynamics (MD) simulations, where the atomic structure is influenced by the oxygen doping concentration. A stable polycrystalline β phase can be achieved by controlled doping of oxygen. Additionally, a phase transformation from α to β with the doping of oxygen is also evident by MD simulations.

Spin-Orbit Torque Switching in an All-Van der Waals Heterostructure.

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (ξ) and electrical conductivity (σ), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW)topological semimetal WTe2 andvdW ferromagnet Fe3 GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ξ≈ 4.6 and σ≈ 2.25 × 105 Ω-1 m-1 for WTe2 . Moreover, the significantly reduced switching current density of 3.90 × 106 A cm-2 at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-typetopological materials and magnetsoffers a promising route to energy-efficient magnetization control inSOT-based spintronics.

Large spin–orbit torque efficiency in PtBi2 film

Bulk PtBi2 has attracted much attention for its topological semi-metallic electronic properties and highly promising applications in spintronics. Here, we report large spin–orbit torque (SOT) efficiency in the sputtered PtBi2 alloy with the trigonal-phase. From spin–torque-induced ferromagnetic resonance measurements, the SOT efficiency of 5 nm PtBi2 is estimated to be ∼0.2. Moreover, the spin Hall conductivity of PtBi2 [∼1 × 105 ℏ/2e (Ω m)−1] is comparable to that of topological materials, such PtTe2 and Bi2Te3. The PtBi2 film has much lower resistance than that of Bi-based topological materials, which makes it a useful candidate for application. The results suggest that the PtBi2 alloy is promising for applications in magnetic memory and logic devices driven by SOT.

Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers

We investigated Pt/Ir/Pt and Pt/Ir multilayers as candidates of nonmagnetic spacer layers in synthetic antiferromagnetic (AF) layers, which are available for the systematic study on AF spintronics. In these systems, we observed (i) AF interlayer exchange coupling in Pt/Ir/Pt and Pt/Ir nonmagnetic spacer layers sandwiched by Co layers and (ii) large spin Hall conductivity in Pt/Ir multilayer heavy-metal systems which is essential to achieve low power consumption spin-orbit torque switching. We found that total nonmagnetic spacer layer thickness $[{t}_{\mathrm{total}}={t}_{\mathrm{Pt}}(\mathrm{Pt}\phantom{\rule{0.16em}{0ex}}\mathrm{thickness})+{t}_{\mathrm{Ir}}(\mathrm{Ir}\phantom{\rule{0.16em}{0ex}}\mathrm{thickness})]$ range in which AF interlayer exchange coupling is observed is wide in Co/nonmagnetic spacer layer/Co with Pt/Ir/Pt and Pt/Ir nonmagnetic spacer layers. Moreover, the large spin Hall angle of ${\ensuremath{\theta}}_{\mathrm{SH}}=10.3%$ and low resistivity of ${\ensuremath{\rho}}_{xx}=35\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\mathrm{cm}$ in Pt/Ir multilayer heavy metal are observed. These results indicate that Pt/Ir/Pt and Pt/Ir are nonmagnetic spacer layers allowing us to achieve the AF interlayer exchange coupling and generation of large spin-orbit torque via spin Hall effect in synthetic AF coupling layer system.

Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures.

Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high‐performance SOT devices, which strongly rely on the spin‐orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non‐magnetic heterostructures. Recently, van der Waals‐layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition‐metal dichalcogenides, topological insulators, and graphene‐based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra‐thin and gate‐tunable ferromagnetic candidates for high‐performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT‐induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.

The deterministic field-free magnetization switching of perpendicular ferrimagnetic Tb-Co alloy film induced by interfacial spin current

Current-induced magnetization switching in compensated ferrimagnetic materials by the spin–orbit torque (SOT) effect is promising for the next generation information storage devices. In this work, we report the current-induced deterministic field-free magnetization switching of the perpendicular Tb-Co ferrimagnet layer in a Co/Ti/Tb-Co trilayers. We found that the switching proportion and polarity of the Tb-Co ferrimagnet depend on the magnetization direction of the in-plane Co layer. The switching process revealed by magneto-optical Kerr microscope imaging further confirmed the current-induced field-free switching of the Tb-Co layer. We also demonstrated the large SOT effective field and the perpendicular effective field acting on the Tb-Co layer, by utilizing the second harmonic voltage measurement and the current-induced loop shift method. The large interfacial SOT efficiency and deterministic field-free magnetization switching in the trilayers structure may accelerate the application of ferrimagnet in SOT memory devices.

Spin-orbit torques and magnetotransport properties of α−Sn and β−Sn heterostructures

Topological insulators have emerged as an important material class for efficient spin-charge interconversion. Most topological insulators considered to date are binary or ternary compounds, with the exception of $\alpha$-Sn. Here we report a comprehensive characterization of the growth, magnetotransport properties, and current-induced spin-orbit torques of $\alpha$-Sn and $\beta$-Sn-based ferromagnetic heterostructures. We show that $\alpha$-Sn grown with a Bi surfactant on CdTe(001) promotes large spin-orbit torques in a ferromagnetic FeCo layer at room temperature, comparable to Pt, whereas $\alpha$-Sn grown without Bi surfactant and the non-topological phase, $\beta$-Sn, induce lower torques. The dampinglike and fieldlike spin-orbit torque efficiency in $\alpha$-Sn with Bi are 0.12 and 0.18, respectively. Further, we show that $\alpha$-Sn grown with and without Bi presents a spin Hall-like magnetoresistance comparable to that found in heavy metal/ferromagnet bilayers. Our work demonstrates direct and efficient charge-to-spin conversion in $\alpha$-Sn ferromagnetic heterostructures, showing that $\alpha$-Sn is a promising material for current-induced magnetization control in spintronic devices.

Spin-Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film.

Current-induced spin-orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most of the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited to heterostructures with interfacial PMA and poor thermal stability. Here, we experimentally demonstrate a SOT magnetization switching for a ferrimagnetic D022-Mn3Ge film with high bulk PMA and robust thermal stability factor under a critical current density of 6.6 × 1011 A m-2 through the spin Hall effect of an adjacent capping Pt and a buffer Cr layer. A large effective damping-like SOT efficiency of 2.37 mT/1010 A m-2 is determined using harmonic measurements in the structure. The effect of the double-spin source layers and the negative-exchange interaction of the ferrimagnet may explain the large SOT efficiency and the manifested magnetization switching of Mn3Ge. Our findings demonstrate that D022-Mn3Ge is a promising candidate for application in high-density SOT magnetic random-access memory devices.

Spin–orbit torque-induced magnetization switching in Pt/Co–Tb/Ta structures

Although transition metal (TM)-rare earth (RE) alloy film has potential application as an information storage medium in spintronic devices, study of the physical mechanism and microscopic process for the current-induced magnetization switching by spin–orbit torque (SOT) in TM-RE is still inadequate. In this work, we investigated the SOT effect and its driven magnetization switching in Pt/Co–Tb/Ta structures with various Co–Tb compositions. The results show that the current-induced SOT effective fields follow 1/Ms law near the compensation composition in this structure. Because of the large SOT effective field and the low coercivity for the Co–Tb layer near the compensation composition, the current-induced magnetization switching with a threshold current density as low as 1010 A/m2 was achieved in the system. The direct Kerr imaging on the switching process verifies two different current-induced switching mechanisms in the Pt/Co–Tb/Ta system.