Large Remnant Polarization Research Articles

Enhanced piezoelectric performance of donor La3+-doped BiFeO3–BaTiO3 lead-free piezoceramics

Lead-free 0.70Bi1.03FeO3-0.30Ba(1-x)LaxTiO3 piezoelectric ceramics (with x = 0.000, 0.005, 0.010, 0.015 and 0.035 abbreviated as 0.0BaLa, 0.5BaLa, 1.0BaLa, 1.5BaLa and 3.5BaLa) were prepared through the conventional solid-state reaction route followed by water quenching process. The X-ray diffraction profile shows that the substitution of Ba2+ = 1.61 Å with a donor ion, La3+ = 1.36 Å, has a profound impact on the crystal symmetry as results the crystal structure transform from dominant rhombohedral (R) to tetragonal (T) phase. A large remnant polarization (Pr = 30.3 μC/cm2) and an enhanced direct piezoelectric coefficient, (d33 = 297 pC/N) together with a high Curie temperature (TC = 530 °C) was obtained near to the morphotropic phase boundary (MPB) of the R and T phases. A maximum strain of (Smax = 0.188%) with corresponding converse piezoelectric coefficient (d33* = 340 pm/V) and low strain hysteresis (≈20%) was found for 1.5BaLa ceramic. Additionally, the water quenching effect was more prominent for 1.0BaLa ceramic as observed from the high thermal hysteresis in heating/cooling results of the dielectric constant (εr), leading to the enhancement of ferroelectric switching behavior. Hence, a small amount of La3+-substitution for Ba2+-site is more effective for the enhancement of ferroelectric and piezoelectric properties, similarly to the donor La3+-doped Pb(Zr,Ti)O3 ceramic.

Observing large ferroelectric polarization in top-electrode-free Al:HfO2 thin films with Al-rich strip structures

We report a large ferroelectric polarization of Al:HfO2 films in metal-ferroelectric-semiconductor structures with a top-electrode free annealing configuration. Annealing an uncapped film at the Al concentration of 7.7 mol. % shows a large remnant polarization up to 50.5 μC/cm2. The film has a unique microscopically laminar distribution of dopant atoms. We find that the formation of the paraelectric monoclinic phase is suppressed in films with laminar distribution. The uniaxial confinement due to the microscopic stress introduced by the Al-rich strip structures is suggested. It is regarded as a possible explanation for enhancing the remnant polarization of the ferroelectric Al:HfO2 film by increasing the atomic layer deposition cycles for dopant layers. The results elucidate a growth procedure to produce high performance ferroelectric Al:HfO2 nanofilms without the postcapping process.

Ferroelectric, Optical, and Photovoltaic Properties of Morphotropic Phase Boundary Compositions in the PbTiO3–BiFeO3–Bi(Ni1/2Ti1/2)O3 System

Ferroelectrics can exhibit the bulk photovoltaic effect (BPVE), which enables a switchable photoresponse and above-band-gap open-circuit voltages (Voc). For these systems a large remnant polarization (Pr) combined with a narrow band gap (Eg) is believed to be critical in optimizing the photovoltaic performance. Here we investigate the PbTiO3-BiFeO3-Bi(Ni1/2Ti1/2)O3 system which exhibits a large bulk Pr and a tunable narrow Eg. To optimize the ferroelectric polarization, ceramic samples were prepared in the vicinity of the ternary morphotropic phase boundary (MPB) and their photovoltaic properties were characterized over a broad range of optical wavelengths. MPB compositions with a direct optical gap ranging from 2.25 - 2.85 eV and Pr = 32 - 39 μC/cm2 show a BPVE with Voc = 6 V at room temperature and a wavelength-dependent switchable photoresponse. Under 1 sun AM1.5 G illumination the short-circuit photocurrent (jsc) increased by an order of magnitude as Eg was lowered from 2.85 eV to 2.25 eV, with ~ 0.1 ...

Conduction mechanism and switchable photovoltaic effect in (1 1 1) oriented BiFe0.95Mn0.05O3 thin film

Epitaxial 200 nm BiFe0.95Mn0.05O3 (BFO) film was grown by pulsed laser deposition (PLD) on (1 1 1) oriented SrTiO3 substrate buffered with a 50 nm thick SrRuO3 electrode. The BFO thin film shows a rhombohedral structure and a large remnant polarization of Pr = 104 µC cm−2. By comparing I(V) characteristics with different conduction models we reveal the presence of both bulk limited Poole–Frenkel and Schottky interface mechanisms and each one dominates in a specific range of temperature. At room temperature (RT) and under 10 mW laser illumination, the as grown BFO film presents short-circuit current density (Jsc) and open circuit voltage (Voc) of 2.25 mA cm−2 and −0.55 V respectively. This PV effect can be switched by applying positive voltage pulses higher than the coercive field. For low temperatures a large Voc value of about −4.5 V (−225 kV cm−1) is observed which suggests a bulk non-centrosymmetric origin of the PV response.

Ferroelectric, Photoelectric, and Photovoltaic Performance of Silver Niobate Ceramics

AbstractFerroelectrics coupled with solar energy conversion are receiving intensive research interest. However, most ferroelectrics with a large remnant polarization can only harvest ultraviolet light in the solar spectrum. Herein, high‐quality silver niobate (AgNbO3) ceramics prepared by spark plasma sintering is reported with a bandgap of ≈2.75 eV and a long tail absorption until 800 nm, leading to outstanding photoelectric properties featured by the visible‐light response over 550 nm. Instantaneous photoresponse measurement using a 355 nm nanosecond pulse laser shows a fast response speed in nanoseconds. Moreover, the ceramic exhibits an intriguing photovoltaic effect under either electric poling or mechanical polishing. Both approaches have switchable characteristics and produce a stable photovoltage as well as photocurrent, while temperature dependence behavior reveals distinctions between ferroelectric polarization and ferroelastic strains in determining the photovoltaic properties. Piezoelectric force microscopy characterization further confirms distinctions between the underlying mechanisms. The electric poling induced photovoltaic effect stems from the aligned polarization involving the ferroelectric component, whereas the mechanical polishing induced photovoltaic effect is associated with the flexoelectricity induced by strain gradients. These results not only show AgNbO3 to be a promising material for photoelectric application but also deepen the understanding of the mechanism underlying ferroelectric photovoltaics.

Enhanced multiferroic properties of Bi0.85Nd0.15FeO3 ceramics with excess Bi2O3

Multiferroic Bi(1+x)×0.85Nd0.15FeO3 (BNF) ceramics with various Bi contents are prepared by conventional solid state reaction, and the effects of excess Bi on the structure, morphology, dielectric, ferroelectric, and magnetic properties are investigated. XRD patterns show the coexistence of rhombohedral and orthorhombic phase in all BNF ceramics due to the doping of Nd3+ ions. Bi2Fe4O9 and Bi2O3 impurity can be observed in x = 0 and x = 5%, 7.5% ceramics, respectively. Surface morphologies are closely related to the Bi content and x = 2.5% sample exhibits the largest average grain size of ∼6.72 μm. The leakage current density has been decreased by 3–4 orders of magnitudes through excess Bi. The x = 2.5% sample shows good ferroelectric property with typical hysteresis loop and a large remnant polarization of about 42 μC/cm2 at 150 kV/cm. The P-E hysteresis deteriorates in x = 5% and x = 7.5% ceramics. The PbZrO3-like superstructure related to 1/4(hh0)p diffraction spots in SAED pattern can be found in all BNF ceramics and the number of grain with superstructure observed in each sample decreases as the Bi content increases. As Bi content increases, the remnant magnetization decreases at first, and then increases. Conversion-electron Mossbauer study have ruled out the impacts of Fe2+, Fe4+, or γ-Fe2O3 on the magnetic properties, suggesting that the weak ferromagnetism comes from the destroy of spin cycloid through substitution of Bi3+ ions with Nd3+ ions. Excessive Bi3+ ions have weakened the effect of Nd3+ ions on suppression of spin cycloid and resulted in the degradation of magnetic properties. The slight improvement of magnetic properties in x = 7.5% sample is considered to attribute to Fe vacancies induced by excessive Bi.

Structural, magnetic, and dielectric properties in Aurivillius phase SrxBi6-xFe1-x/2Co1-x/2Ti3+xO18

SrxBi6-xFe1-x/2Co1-x/2Ti3+xO18 (x = 0, 0.25, 0.5, 0.75, 1)(SBFCT-x) ceramics were prepared by the sol-gel auto-combustion method, and their microstructures, ferroelectric, magnetic and dielectric properties were investigated. All samples show layer-perovskited Aurivillius phase, which confirms that Sr doping does not affect the structure of SBFCT ceramics. The coexistence of ferroelectricity and ferromagnetism were observed at room temperature for all the samples. The largest remnant polarization (2Pr ˜ 17.4 μC/cm2) is observed in the SBFCT-1 ceramic, while the SBFCT-0.5 ceramic shows the highest remnant magnetization (2Mr ˜ 0.74 emu/g). To explore the effect of valance states of magnetic ions on the properties, we analysed the content variation of Fe2+, Co2+, and oxygen vacancies by the X-ray photoelectron spectroscopy results. Furthermore, dielectric anomalies have been found around 400 K, which can be ascribed to the hopping process of oxygen vacancies. The effects of Sr and Ti substitution on ferroelectric and magnetic properties have been investigated and discussed.

Ferroelectric properties of Ag doped PbZr0.53Ti0.47O3 thin film deposited by sol–gel process

To suppress the generation of oxygen vacancy during the PbZr0.53Ti0.47O3 (PZT) film synthesis process, herein, the 0–3 type Ag/PZT film is chosen as a prototype to systematically investigate the mechanisms of oxygen vacancy decrease and the relationship of ferroelectric properties. The uniform and dense films were successfully fabricated on fluorine tin oxide glasses (FTO) by facile sol–gel processes. It is confirmed the existence of silver nanoparticles in the film, indicating the composite ferroelectric films are of 0–3 type. When Ag doping mole concentration is 0.010 in the sol, a large remnant polarization (Pr) of ~ 50.7 µΧ/cm2 is got, which is 37.9 µΧ/cm2 for pure PZT. UV–vis spectrum confirms the generation of Ag2O in the process of mixing the sol. Furthermore, the oxygen vacancies caused by natural evaporation of lead specie are effectively reduced because of the decomposition of Ag2O, confirmed by X-ray photoelectron spectroscopy. This work points out the generated Ag2O as the intermediate product is the key to achieve high remnant polarization in Ag/PZT based film and make it as a promising candidate for memory applications.

Structure and physical properties of (Zn, Ti) co-doped BiFeO3 ceramics prepared using three different processes

In this paper, BiFe1–2×ZnxTixO3 (BFZTO) (where x = 0, 0.02, and 0.03) ceramics were prepared using three different processes and resulting samples were evaluated using various characterization techniques. X-ray diffraction (XRD) patterns indicate that all BFZTO samples exhibit typical diffraction pattern of R3c space group. Results further show that the combination of cold isostatic pressing and conventional sintering (CIP-CS) is an effective method for preparing high-performance BiFeO3 (BFO) ceramics. BFZTO (x = 0.02) samples prepared using CIP-CS method possess large remnant polarization of 1.18 μC/cm2 and coercive field of 11.5 kV/cm. Meanwhile, the same sample displays enhanced dielectric properties due to the formation of defect complexes and increase in grain boundaries, which reduce the amount of free charge and restrict the transportation of charged defects and reversal of domain. For CIP-CS BFZTO ceramics, UV–visible diffuse absorption spectra show that the value of optical band gap lies within the range of 1.72–1.98 eV, which indicates potential applications of the ceramic in photocatalyst and photoconductive devices.

Orientation-dependent dielectric and ferroelectric properties of Pr3+-doped Na0.5Bi0.5TiO3 thin films

Pr3+-doped Na0.5Bi0.5TiO3 (Pr-NBT) thin films with different preferred orientations including random, (100), and (110) orientations were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method combining with a rapid thermal annealing. Effects of the crystallographic orientation on the ferroelectric and dielectric properties of Pr-NBT thin films were investigated. XRD patterns revealed that the preferential orientation degrees of (100)- and (110)-oriented Pr-NBT thin films were 97% and 69%, respectively. The (100)-oriented Pr-NBT thin film has a higher dielectric constant of 1035 compared to the (110)- and randomly oriented ones. Furthermore, a large remnant polarization (2Pr = 31 µC/cm2) was obtained from the highly (100)-oriented Pr-NBT thin film, which is 1.55 times larger than that of the randomly oriented film. The quantitative relationship in dielectric constants between the (100)-, (110)-oriented, and randomly oriented Pr-NBT thin films was calculated using the dipole azimuth model. The calculated result was consistent with experimental measurements. The optimal dielectric tunable property (tunability = 40.8%, FoM = 10.2) is obtained from (100)-oriented films. The highly (100)-oriented Pr-NBT lead-free thin film is promising for use in integrated microelectronic devices.

Multiferroic properties of BiFeO3 ceramics prepared by spark plasma sintering with sol-gel powders under an oxidizing atmosphere

Multiferroic BiFeO3 ceramics are synthesized by spark plasma sintering along with sol-gel powders. During the sintering process, the pellets are surrounded by Al2O3 nanopowders to create an oxidizing atmosphere. The effects of Al2O3 nanopowders surrounding on the dielectric, ferroelectric and magnetic properties are investigated. Findings from X-ray diffraction and scanning electron microscopy demonstrate that the produced material is pure with an average grain size approximately from 1 to 3 µm. Results from X-ray photoelectron spectroscopy indicate that the concentration of oxygen vacancies is lower for the samples prepared in the oxidizing atmosphere. Consequently, the prepared ceramics possess lower dielectric loss (0.01), reduced leakage current density (6.58 × 10−8 A/cm2), larger remnant polarization (0.892 μC/cm2) as well as good magnetic properties (maximum magnetization, Mm = 0.324 emu/g; remnant magnetization, Mr = 0.0024 emu/g).

Significant improvement in morphological, dielectric, ferroelectric and piezoelectric characteristics of Ba0.9Sr0.1Ti0.9Zr0.1O3–BaNb2O6 nanocomposites

Multifunctional composite with material composition (1 − x)Ba0.9Sr0.1Ti0.9Zr0.1O3–xBaNb2O6 (x = 0.0, 0.05, 0.1, 0.2 and 0.3) has been successfully synthesized using mechano-chemical activation process. The co-existence of perovskite tetragonal phase of BSTZ and niobate orthorhombic phase of BNO was detected by X-ray diffraction measurement and confirmed by Rietveld analysis. All the BSTZ–BNO composites show a polygonal grain type morphology with clearly visible grain boundaries. BSTZ–BNO composites possessed a thermally stable dielectric constant within a broad range of temperature. The obtained results show a strong influence of BNO addition on the microstructural, dielectric, ferroelectric, piezoelectric and breakdown strength of bare BSTZ ceramic. For x = 0.10, the composite exhibit optimum properties with high dielectric constant em = 5842, large remnant polarization Pr = 9.25 µC/cm2, improved piezoelectric constant d33 = 296 pC/N and high breakdown strength Ebd = 304 kV/cm. The high dielectric constant accompanied by very low dielectric loss and large piezoelectric constant make BSTZ–BNO a suitable material for ceramic capacitors and electromechanical device applications.

Study of the properties of SBT ceramics doped with different concentrations of Ca

This study investigated how Ca doping affects the electrical properties of Sr2Bi4Ti5O18 (SBT) ceramics. Among the samples tested, a sample with a substitution level of 0.15 showed the highest a-axis orientation and the largest lattice distortion. Through XPS analysis, it was found that the formation of oxygen vacancies is suppressed by Ca substitution in SBT. A large remnant polarization (2Pr) of 17.7 μC/cm2 and small coercive field (2Ec) of 91 kV/cm was observed for the Ca0.15Sr1.85Bi4Ti5O18 (CSBT-0.15) ceramic, which indicated that this sample possessed the best ferroelectric properties. As the substitution level increased, the variation of the leakage current density first decreased and then increased, and the sample with the substitution level of 0.15 showed the smallest leakage current density of J= 1.1 × 10−6A/cm2 at ~80 kV/cm. For the investigated CaxSr2-xBi4Ti5O18 (CSBT) ceramic samples, space-charge-limited conduction (SCLC) was determined to be the main conduction mechanism.

Structural transition, defect complexes and improved ferroelectric behaviors of Bi0.88Sr0.03Gd0.09Fe0.94Mn0.04Co0.02O3/Co1-xMnxFe2O4 bilayer thin films

Bi0.88Sr0.03Gd0.09Fe0.94Mn0.04Co0.02O3/Co1-xMnxFe2O4 (BSGFMC/CMxFO) bilayer thin films were successfully prepared by the sol-gel method. There exists a structural transition from the co-existence of trigonal-R3c:H and trigonal-R3m:R phases to a single trigonal-R3m:R phase in the BSGFMC layer, which is induced by Mn-doping in the CoFe2O4 layer. The amount of oxygen vacancies in the bilayer films is reduced by Mn-doping, leading to a decreased amount of defect complexes. The dielectric dispersion of the BSGFMC/CMxFO bilayer films also disappears with the increase of Mn content. The BSGFMC/CM0.3FO bilayer film exhibits saturated polarization at a lower applied voltage compared with the other samples, while, a large remnant polarization (106 μC cm−2) and a small coercive field (263 kV cm−1) are obtained in this bilayer film. The capacitance-voltage behaviors further confirm its impressive ferroelectric performance. The excellent ferroelectric properties of the BSGFMC/CM0.3FO bilayer film mainly result from the presence of fewer defect complexes and the structural transition in the BSGFMC layer. In addition, the BSGFMC/CM0.3FO bilayer film also displays a giant saturation magnetization with 45.91 emu cm−3. The superior multiferroic properties provide a potentially enable application in novel multiferroic devices.

Growth and characterization of Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 composite film with strong magnetoelectric effect by chemical solution deposition under moderate crystallization temperature

Using chemical solution deposition method, La0.67Sr0.33MnO3 (LSMO) and Bi3.15Nd0.85Ti2.95Hf0.05O12 (BNTH) layers were successively fabricated onto (001) LaAlO3 (LAO) substrates, and then BNTH/LSMO ferromagnetic-ferroelectric composite films with a 2-2 layered type structure were obtained. The LSMO ferromagnetic layer was epitaxially grown on the LAO substrate and showed the low resistivity of 5.0 × 10−3 Ω cm. It was not only used as a seed layer to induce the oriented growth of BNTH ferroelectric layers, but also as a bottom electrode to measure ferroelectric/magnetoelectric (ME) properties. The effects of crystallization temperature on the orientation degree, the surface morphology, and the dielectric and ferroelectric performances of the composite films were investigated. The composite film crystallized at 730 °C has the largest remnant polarization (Pr) of 35.0 μC/cm2, the lowest leakage current density of 1.35 × 10−7 A/cm2 and the high saturated magnetization (Ms) of 370 emu/cm3. The composite film also exhibits a strong ME response in the absence of DC bias magnetic field. Its ME voltage coefficient, αE, gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches 35.8 V/cm·Oe at 100 kHz.

Multiferroic properties of Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03NixO3 thin films modulated by F–N tunneling effects

Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03NixO3 (BHSFMNixO) films were prepared via a chemical solution deposition method. X-ray diffraction (XRD) patterns and Raman spectroscopy revealed that BHSFMNixO films showed (100) preferential orientation and the structural transition. The structure of BHSFMNi0.02O was close to the morphotropic phase boundary (MPB) (R3c:H:R3m:R = 1:1). The oxygen vacancies were increased with an increase in Ni2+ doping, and there were many defect dipoles. The BHSFMNixO thin films exhibited an Ohmic or a space-charge-limited conduction (SCLC) mechanism in a low electric field, and the interface-limited Fowler–Nordheim (F–N) tunneling or the trap-assisted F–N tunneling in a high electric field. The interface-limited F–N tunneling effects of BHSFMNi0.01O and BHSFMNi0.02O were due to an interface effect. The large remnant polarizations of BHSFMNi0.01O and BHSFMNi0.02O contributed to the intrinsic polarization and the interface-limited F–N tunneling. The fake polarizations of BHSFMNi0.03O and BHSFMNi0.04O were dominated by the trap-assisted F–N tunneling in which the interface traps helped the carrier tunnel the potential barrier. These results demonstrate that the polarizations of BHSFMNixO are related not only to the structural transformation, but also to the defects and conduction mechanisms.

Growth and electrical properties of epitaxial 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin film by pulsed laser deposition

(100)-oriented epitaxial relaxor ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) thin film was prepared on SrRuO3-buffered SrTiO3 single-crystal substrate by pulsed laser deposition. The phase and domain structure, ferroelectric and piezoelectric properties, and leakage current behavior were studied. Results indicated well saturated polarization-versus-electric field hysteresis loops with large remnant polarization of 30 µC/cm2 and coercive field of 11 kV/mm was obtained. The analysis on the leakage current behavior proposed that linear ohmic conduction and Fowler–Nordheim tunneling were the dominant mechanism for the electric field amplitude below and above 15 kV/mm, respectively. Furthermore, the epitaxial PMN-0.3PT thin film exhibited excellent local piezoelectric response and in situ electric-field-induced domain switching behavior. These results suggest the potential applications of the present epitaxial PMN-0.3PT film in integrated ferroelectric devices.

Enhanced leakage and ferroelectric properties of Zn-doped BiFeO3 thin films grown by sol-gel method

BiFe1-xZnxO3 (BFZO) (x = 0%, 1%, 2%, 3%) films were deposited on ITO/glass substrates by sol-gel method. We systematically investigated the influence of Zn doping on the crystal microstructure, leakage current, conduction mechanism and ferroelectric behavior of BFZO films. From the XRD patterns, all samples match well with the perovskite structure without impurity phase. Large remnant polarization (2Pr = 129.6 μC/cm2), low coercive field (2Ec = 904 kV/cm) at measured electric field value of 1000 kV/cm were obtained from the BFZO films with x = 2%. Leakage current density curves shows that Zn doping can significantly decrease the leakage current of BFO film in low electric field. In addition, the leakage conduction mechanism transforms from the Ohmic conduction under the low electric field to the F-N tunneling effect under high electric field.

Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration

Although dopants have been extensively employed to promote ferroelectricity in hafnia films, their role in stabilizing the responsible ferroelectric nonequilibrium Pca21 phase is not well understood. In this work, using first-principles computations, we investigate the influence of nearly 40 dopants on the phase stability in bulk hafnia to identify dopants that can favor formation of the polar Pca21 phase. Although no dopant was found to stabilize this polar phase as the ground state, suggesting that dopants alone cannot induce ferroelectricity in hafnia, Ca, Sr, Ba, La, Y, and Gd were found to significantly lower the energy of the polar phase with respect to the equilibrium monoclinic phase. These results are consistent with the empirical measurements of large remnant polarization in hafnia films doped with these elements. Additionally, clear chemical trends of dopants with larger ionic radii and lower electronegativity favoring the polar Pca21 phase in hafnia were identified. For this polar phase, an ad...

Structural, microstructural, ferroelectric and photoluminescent properties of praseodymium modified Ba0.98Ca0.02Zr0.02Ti0.98O3 ceramics

The ‘x’wt% (x = 0, 0.02, 0.04 and 0.06) Pr6O11 modified Ba0.98Ca0.02Zr0.02Ti0.98O3 (BCZT – x Pr) piezoelectric ceramics have been fabricated by the solid state reaction method with sintering at 1450°C (x = 0) and 1350°C (0.02 ≤ x ≤ 0.06) for 2h. The impact of Pr concentration on the structural, microstructural, photoluminescence and ferroelectric properties has been systematically investigated. The x-ray diffraction (XRD) patterns revealed the co-existence of tetragonal and orthorhombic phases at room temperature upto x = 0.04 Pr concentration. The grain size was found to decrease upto x = 0.04 Pr content. Room temperature Raman spectroscopy results were consistent with the XRD results. The photoluminescence (PL) spectra showed significant emissions consisting of strong blue (489nm), green (528nm) and red (649nm) wavelengths. The emission intensities of PL spectrum were strongly Pr concentration dependent and a maximum value was obtained for 0.04 Pr modified BCZT ceramic. Further, a large remnant polarization (2Pr ~ 13µC/cm2) and low coercive field (EC ~ 22V/cm) were obtained for BCZT – 0.04 Pr ceramic. The crystal structure and microstructure affect the photoluminescence and ferroelectric properties. Such properties of 0.04 Pr modified BCZT ceramic make it the potential candidate for novel integrated and multifunctional devices.