Research in the optimization of quantum structures based on arbitrary alloys has become prominent in recent years. The heterostructures have been designed using the multiple layers of the nanomaterials by regular spacing to satisfy the design rule and to enhance the performance of the MOSFET. The three-dimensional structure of Cylindrical Surrounding Double-Gate (CSDG) MOSFET has been designed using the 2D planar structure of Double-Gate (DG) MOSFET by rotating along the axis outside the gate terminal. This kind of structure has concentric cylindrical layers of the heterostructures aligned in a fashion to form a coaxial array. This exhibits various electrical characteristics when biased and also provides a frequency response matching the RF application requisite. The transient analysis shows that the oscillations went from 47.89 GHz to 61.77 GHz under the La2O3 oxide layer between the gate terminal and bulk. The kink was observed exactly at the −3 V gate voltages where the Hydrogen sensing equipment takes a growth of 650 + 1.25%. The observed characteristics curve makes the next kink at 2 V at positive bias. The experiment was carried out in the environment of 500 ppm hydrogen gas in the chamber for sensing. The analysis has been made clear to study the electrical characteristics of the CSDG MOSFET in the nanometer regime and enhance the operation of RF hybrid applications.