Junction Behavior Research Articles

Semiconductive-like behaviour and negative differential effect observed in self-assembled riboflavin layer on gold electrodes

Riboflavin or vitamin B2 plays significant roles in metabolic reactions and energy production, establishing it as an important research subject in biology and medicine. While there are numerous riboflavin-related publications in these fields, interrogation of its electronic properties in relation to the physiological function at the cellular level remains obscure due to technological challenges. However, progress in molecular electronics and the discovery of the semiconductor-like behaviour of biomolecules in recent times have initiated growing interest in exploring the electronic properties of these materials for potential bioelectronic device applications. In this work, we demonstrate novel semiconductor-like behaviour in riboflavin within a gold/Riboflavin/gold Schottky junction. We observed the occurrence of two negative differential resistance peaks at low voltages of 1.5 and 2.0 V, probably the first-ever report of this effect in a biomolecule. Interestingly, the proposed mechanism simulates a single Schottky junction behaviour despite the physical existence of two junctions. Solid-state parameters such as turn-on voltage, shunt resistance, and ideality factor were also calculated using Conventional and Cheung and Cheung’s methods. The results were highly characteristic to the riboflavin studied when compared to previous works on biomolecules. This opens up the possibility of developing solid-state sensors for electronically characterising biomolecules like vitamins to help advance our understanding of the electronic properties of these essential nutrients.

Directional picoantenna behavior of tunnel junctions formed by an atomic-scale surface defect.

Plasmonic nanoantennas have attracted much attention lately, among other reasons because of the directionality of light emitted by fluorophores coupled to their localized surface plasmon resonances. Plasmonic picocavities, i.e., cavities with mode volumes below 1 nm3, could act as enhanced antennas due to their extreme field confinement, but the directionality on their emission is difficult to control. In this work, we show that the plasmonic picocavity formed between the tip of a scanning tunneling microscope and a metal surface with a monoatomic step shows directional emission profiles and, thus, can be considered as a realization of a picoantenna. Electromagnetic calculations demonstrate that the observed directionality arises from the reshaping and tilting of the surface charges induced at the scanning tip due to the atomic step. Our results pave the way to exploiting picoantennas as an efficient way for the far-field probing and control of light-matter interactions below the nanoscale.

Tuning the IcRn value of YBCO step edge Josephson junction through Ar+ ion irradiation

YBCO Step edge Josephson junctions are fabricated on single crystal MgO (100) substrates, and the effect of Ar+ ion irradiation on the critical current (Ic) and normal state resistance (Rn) is studied. It is shown that on the appropriate exposure of the YBCO step edge junction to Ar+ ion irradiation, the IcRn product of the junction can be enhanced up to 0.66 mV at 77 K, which is sufficiently good for many applications. With the increase in the exposure time of Ar+ ion irradiation, the value of Ic decreases, and the Rn value increases. After irradiating for 4 min, Ic as low as 70 μA and Rn as high as ∼9.4 Ω have been obtained at 77 K. It is found that for higher exposure time, the junction behavior tends to SIS-type junctions. The mechanism responsible for the decrease in Ic and increase in Rn seems to be associated with the vacancies as well as displacement of oxygen atoms caused by the ion irradiation, which causes the suppression of superconducting parameters as the superconducting properties critically depend on the concentration of the oxygen atoms in the Cu-O planes.

Modeling the diffusion and depletion capacitances of a silicon pn diode in forward bias with impedance spectroscopy

We investigated the capacitance of a forward-biased silicon pn diode using impedance spectroscopy. Despite extensive research spanning decades, no single model in the literature adequately describes the impedance behavior for bias up to the built-in voltage. By employing the 1N4007 diode as a case study, we analyzed the impedance over a wide frequency range, from 1 Hz to 1 MHz. Our analysis reveals that impedance can be effectively studied by combining two models. In both models, the depletion capacitance is assumed to be an ideal capacitor with a value independent of frequency. One model accounts for diffusion processes, while the other addresses interfacial effects, as well as potential and capacitance distributions across the junction. This approach offers valuable insights into the complex capacitance behavior of pn junctions as a function of the bias voltage. Measurements of depletion and diffusion capacitances, as well as of the diode transit time can be achieved from a set of impedance spectroscopy data.

Optimizing transparent electrodes: Interplay of high purity SWCNTs network and a polymer

The discovery of transparent electrodes led to the development of optoelectronic devices such as touchscreens, infrared (IR) sensors, etc. Carbon nanotubes (CNTs) have been a potential replacement for ITO due to their exceptional properties, especially in the IR region. In this work, we present the development of a CNT-polymer composite thin film that exhibits outstanding transparency across visible and IR spectra prepared by layer-by-layer (LbL) technique. This approach ensures uniform integration and crosslinking of CNTs into lightweight matrices, and also represents a cost-effective method for producing transparent electrodes with remarkable properties. The produced films achieved a transparency above 80 % in the UV/VIS range and approximately 70 % in the mid-IR range. The sheet resistance of the fabricated thin films was measured at about 4 kΩ/sq, showing a tendency to decrease with the number of bilayers. In this work we have investigated electrical properties and transport mechanisms in more detail with computational analysis. Computational analysis was performed to better understand the electrical behavior of nanotube-polymer junctions in the interbundle structure. Based on all results, we propose that the transparent electrodes with 4 and 6 bilayers are the most optimal structures in terms of optical and electrical properties.

Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions

We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behavior of this multiterminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into account these heating effects. We also investigate the phase dynamics in our MTJJ by measuring its switching current distribution and find correlated switching events in different junctions. We show that the switching dynamics is governed by phase diffusion at low temperatures. Furthermore, we find that self-heating introduces additional damping that results in overdamped I−V characteristics when normal and supercurrents coexist in the device. Published by the American Physical Society 2024

Exact solutions for thermally induced electromechanical fields of PN junctions in centrosymmetric semiconductors

PN junctions play important roles in semiconductor devices. Flexoelectricity, an electromechanical coupling between strain gradient and electric polarization, has non-negligible contributions in nano-devices. The thermoflexoelectric effect is a phenomenon in which temperature gradients generate inhomogeneous strains and further induce flexoelectric polarizations. Therefore, temperature gradients can affect carrier transport in PN junctions through the thermoflexoelectric effect. In this paper, a one-dimensional model of the PN junction under a uniform temperature change is established. Exact solutions for the electromechanical fields in the PN junction are obtained for the first time. The effects of the temperature gradient, doping level, and flexoelectric coefficient on the electromechanical behaviors of the PN junction are numerically analyzed. The results indicate that carrier concentrations in the p and n regions are sensitive to temperature gradients because of the screening effect of the mobile charge on the flexoelectric polarization induced by the temperature gradient. Meanwhile, the flexoelectric field and the initial built-in electric field in the depletion region jointly determine the magnitude of the potential barrier, and thus, the temperature-gradient-induced flexoelectric field can tune the switching characteristics of the PN junction. This study provides a theoretical basis for the tuning of the electromechanical behavior of the PN junction by thermally induced flexoelectric fields.

Electromigrated Gold Nanogap Tunnel Junction Arrays: Fabrication and Electrical Behavior in Liquid and Gaseous Media.

Tunnel junctions have been suggested as high-throughput electronic single molecule sensors in liquids with several seminal experiments conducted using break junctions with reconfigurable gaps. For practical single molecule sensing applications, arrays of on-chip integrated fixed-gap tunnel junctions that can be built into compact systems are preferable. Fabricating nanogaps by electromigration is one of the most promising approaches to realize on-chip integrated tunnel junction sensors. However, the electrical behavior of fixed-gap tunnel junctions immersed in liquid media has not been systematically studied to date, and the formation of electromigrated nanogap tunnel junctions in liquid media has not yet been demonstrated. In this work, we perform a comparative study of the formation and electrical behavior of arrays of gold nanogap tunnel junctions made by feedback-controlled electromigration immersed in various liquid and gaseous media (deionized water, mesitylene, ethanol, nitrogen, and air). We demonstrate that tunnel junctions can be obtained from microfabricated gold nanoconstrictions inside liquid media. Electromigration of junctions in air produces the highest yield (61-67%), electromigration in deionized water and mesitylene results in a lower yield than in air (44-48%), whereas electromigration in ethanol fails to produce viable tunnel junctions due to interfering electrochemical processes. We map out the stability of the conductance characteristics of the resulting tunnel junctions and identify medium-specific operational conditions that have an impact on the yield of forming stable junctions. Furthermore, we highlight the unique challenges associated with working with arrays of large numbers of tunnel junctions in batches. Our findings will inform future efforts to build single molecule sensors using on-chip integrated tunnel junctions.

Behavior of jittering potential before and after impulse blockings: a preliminary study in myasthenia gravis

Neuromuscular junction disorders lead to secession of bioelectrical activity transmission between motor nerve endings and muscle fibers. In diseases that are severe enough, impulse blockings are observed. This study aims to reveal the behavior of neuromuscular junction before and after impulse blockings. Fourteen recordings harboring impulse blockings from nine myasthenia gravis (MG) patients were included. Recordings were made from frontalis muscle by using concentric needle electrode during voluntary contraction. One hundred traces were acquired in each session. In addition to well-known jitter parameters, new parameters were calculated such as number of consecutive impulse blocking groups, number of impulse blockings in each group, ratio of maximum number of consecutive impulse blockings to all number of blockings. Graphics were composed to show location change behavior of jittering potential in all traces. For jittering potential, before or after a single impulse blocking the amount of getting further away from trigger peak was greater than getting closer to trigger peak. However, after consecutive impulse blockings the amount of getting closer to trigger peak was greater than the amount of getting further away. The behavior of neuromuscular junction before and after impulse blockings was demonstrated in MG patients. Moreover, new features were extracted for jitter studies. Building models for different diseases according to their impulse blockings may be possible with the developed algorithm.Graphical abstract

Biomechanical characteristics of the meniscocapsular junction of the posterior segment of the medial meniscus.

Despite extensive literature available on the mechanical properties of knee ligaments and menisci, research on the mechanical properties of the meniscus-capsular junction (MCJ) is lacking. This study aims to investigate the biomechanical behavior of the MCJ of the medial meniscus using a tensile failure test. Seven dissected cadaveric knees were used for biomechanical analysis. Tensile failure tests were performed using an INSTRON ElectroPuls E1000 stress system to measure stress/strain curves, maximum load at failure, elastic limit load, elongation at break, elongation at the elastic limit, and linear stiffness, were collected and analyzed. All ruptures occurred at the MCJ. The MCJ displayed similar mechanical properties to knee ligaments. Average values were: maximum load at failure (63.9 ± 3.2N), yield load (52.9N ± 2.6N), elongation at break (2.5mm ± 0.3mm), elongation at the elastic limit (1.25mm ± 0.15mm), strain at break (47.0% ± 3.5%), strain at yield (23.2% ± 2.3%), and stiffness (56.6 ± 9.N/mm-1). The meniscus-capsular junction's mechanical properties are similar to other knee ligaments and may play a role in knee stability. The findings provide insights into the the behavior of the meniscus-capsular junction could have clinical implications for diagnosing and surgical treatment of meniscocapsular lesions.

In-situ fabrication of CuO/ZnO heterojunctions at room temperature for a self-powered UV sensor

This work presents a novel, low-cost, wet chemical fabrication technique to develop a self-powered photonic sensor. Thin films of zinc and copper were DC-sputtered on an ITO-coated glass slide, followed by an in-situ one-step oxidation of copper and zinc to form CuO (copper oxide) and ZnO (zinc oxide) heterojunctions at room temperature. The surface morphologies and chemical compositions characterized by a scanning electron microscope (SEM), X-ray diffraction (XRD), and an X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of heterojunctions between p-type CuO nanowires and n-type ZnO nanoparticles. The material's light absorbance was measured using ultraviolet-visible (UV–vis) spectroscopy. The fabricated device works in a photovoltaic mode; as photons strike the substrate, the built-in potential separates excitons, resulting in an electrical current without an external bias. The current-voltage characteristics of the device studied using a 365 nm centered laser radiation revealed an ideal p-n junction behavior. The sensor demonstrated stable and reproducible responsivity and photosensitivity of 0.108 A/W and 114, respectively, under a periodic UV radiation condition.

Quantum interference in a high-transition-temperature superconductor based on nanoslits on SrTiO3 substrate

The Josephson junction, a key component of superconducting quantum circuits, is much less mature, especially for the high-transition (high-Tc) temperature cuprate superconductors. Herein, we report on the realization of high-Tc Josephson junction based on nanoslits on a SrTiO3 substrate. We demonstrate the ability to manipulate the current–voltage characteristics of YBa2Cu3O7−x bridges continuously from superconducting current-dominated to Josephson junction behavior by changing the irradiation parameters of the focused Ga+ ion beam on a single-crystal SrTiO3 substrate. The periodic critical current that depends on the magnetic flux coupled into the superconducting quantum interference devices was observed, which exactly reflects the effects of quantum tunneling and flux quantization. To some extent, this weak link within the framework of the semiconductor manufacturing process shows the potential to provide a cost-effective, highly efficient, and reliable pathway for scaling up quantum mechanical superconducting circuits, which is promising for the fabrication process.

Anisotropic physics-regularized interpretable machine learning of microstructure evolution

Anisotropic Physics-Regularized Interpretable Machine Learning Microstructure Evolution (APRIMME) is a general-purpose machine learning solution for grain growth simulations. In prior work, PRIMME employed a deep neural network to predict site-specific migration as a function of its neighboring sites to model normal, isotropic, grain growth behavior. This work aims to extend this method by incorporating grain boundary misorientation-based grain growth behavior. APRIMME is trained on anisotropic simulations created using the Monte Carlo-Potts (MCP) model. The results of this work are compared statistically using grain radius, number of sides per grain, mean neighborhood misorientations, and the standard deviation of triple junction dihedral angles, and are found to match in most cases. The exceptions are small and seem to be related to two causes: (1) the deterministic model of APRIMME is learning from the stochastic simulations of MCP, which seems to accentuate triple junction behaviors; and, (2) a bias against very small grains is made evident in a quicker decrease in grains than expected at the beginning of an APRIMME simulation. APRIMME is also evaluated for its general ability to capture anisotropic grain growth behavior by first investigating different test case initial conditions, including a circle grain, three grain, and hexagonal grain microstructures.

Quantum Gas-Enabled Direct Mapping of Active Current Density in Percolating Networks of Nanowires.

Electrically percolating nanowire networks are among the most promising candidates for next-generation transparent electrodes. Scientific interest in these materials stems from their intrinsic current distribution heterogeneity, leading to phenomena like percolating pathway rerouting and localized self-heating, which can cause irreversible damage. Without an experimental technique to resolve the current distribution and an underpinning nonlinear percolation model, one relies on empirical rules and safety factors to engineer materials. We introduce Bose-Einstein condensate microscopy to address the longstanding problem of imaging active current flow in 2D materials. We report on performance improvement of this technique whereby observation of dynamic redistribution of current pathways becomes feasible. We show how this, combined with existing thermal imaging methods, eliminates the need for assumptions between electrical and thermal properties. This will enable testing and modeling individual junction behavior and hot-spot formation. Investigating both reversible and irreversible mechanisms will contribute to improved performance and reliability of devices.

Ferroelectric Domain Wall p-n Junctions.

We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted electric fields, associated with p-n junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor p-n junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between p and n regions, at the core of conventional p-n junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.

Rational Design of Photocontrolled Rectifier Switches in Single-Molecule Junctions Based on Diarylethene.

The construction of multifunctional, single-molecule nanocircuits to achieve the miniaturization of active electronic devices is a challenging goal in molecular electronics. In this paper, we present an effective strategy for enhancing the multifunctionality and switching performance of diarylethene-based molecular devices, which exhibit photoswitchable rectification properties. Through a molecular engineering design, we systematically investigate a series of electron donor/acceptor-substituted diarylethene molecules to modulate the electronic properties and investigate the transport behaviors of the molecular junctions using the non-equilibrium Green's function combined with the density functional theory. Our results demonstrate that the asymmetric configuration, substituted by both the donor and acceptor on the diarylethene molecule, exhibits the highest switching ratio and rectification ratio. Importantly, this rectification function can be switched on/off through the photoisomerization of the diarylethene unit. These modulations in the transport properties of these molecular junctions with different substituents were obtained with molecule-projected self-consistent Hamiltonian and bias-dependent transmission spectra. Furthermore, the current-voltage characteristics of these molecular junctions can be explained by the molecular energy level structure, showing the significance of energy level regulation. These findings have practical implications for constructing high-performance, multifunctional molecular-integrated circuits.

Coupling of Pyro-Piezo-Phototronic Effects in a GaN Nanowire.

In this paper, we systematically investigate the synergistic regulation of ultraviolet and mechanical loading on the electromechanical behavior of a GaN nanowire. The distributions of polarization charge, potential, carriers, and electric field in the GaN nanowire are analytically represented by using a one-dimensional model that combines pyro-phototronic and piezo-phototronic properties, and then, the electrical transmission characteristics are analyzed. The results suggest that, due to the pyro-phototronic effect and ultraviolet photoexcited non-equilibrium carriers, the electrical behavior of a nano-Schottky junction can be modulate by ultraviolet light. This provides a new method for the function improvement and performance regulation of intelligent optoelectronic nano-Schottky devices.

GHz operation of a quantum point contact using stub-impedance matching circuit

Quantum point contacts (QPC) are the building blocks of quantum dot qubits and semiconducting quantum electrical metrology circuits. QPCs also make highly sensitive electrical amplifiers with the potential to operate in the quantum-limited regime. Though the inherent operational bandwidth of QPCs can eclipse the THz regime, the impedance mismatch with the external circuitry limits the operational frequency to a few kHz. Lumped-element impedance-matching circuits are successful only up to a few hundreds of MHz in frequency. QPCs are characterised by a complex impedance consisting of quantized resistance, capacitance, and inductance elements. Characterising the complex admittance at higher frequencies and understanding the coupling of QPC to other circuit elements and electromagnetic environments will provide valuable insight into its sensing and backaction properties. In this work, we couple a QPC galvanically to a superconducting stub tuner impedance matching circuit realised in a coplanar waveguide architecture to enhance the operation frequency into the GHz regime and investigate the electrical amplification and complex admittance characteristics. The device, operating at ∼ 1.96GHz, exhibits a conductance sensitivity of 2.92×10−5(e2/h)/Hz with a bandwidth of 13MHz. Besides, the RF reflected power unambiguously reveals the complex admittance characteristics of the QPC, shining more light on the behaviour of quantum tunnel junctions at higher operational frequencies.

On the Intermolecular Interactions in Thiophene-Cored Single-Stacking Junctions.

There have been attempts, both experimental and based on density-functional theory (DFT) modeling, at understanding the factors that govern the electronic conductance behavior of single-stacking junctions formed by pi-conjugated materials in nanogaps. Here, a reliable description of relevant stacked configurations of some thiophene-cored systems is provided by means of high-level quantum chemical approaches. The minimal structures of these configurations, which are found using the dispersion-corrected DFT approach, are employed in calculations that apply the coupled cluster method with singles, doubles and perturbative triples [CCSD(T)] and extrapolations to the complete basis set (CBS) limit in order to reliably quantify the strength of intermolecular binding, while their physical origin is investigated using the DFT-based symmetry-adapted perturbation theory (SAPT) of intermolecular interactions. In particular, for symmetrized S-Tn dimers (where "S" and "T" denote a thiomethyl-containing anchor group and a thiophene segment comprising "n" units, respectively), the CCSD(T)/CBS interaction energies are found to increase linearly with n ≤ 6, and significant conformational differences between the flanking 2-thiophene group in S-T1 and S-T2 are described by the CCSD(T)/CBS and SAPT/CBS computations. These results are put into the context of previous work on charge transport properties of S-Tn and other types of supramolecular junctions.

Photoexcitation dominated electrical behaviors in a nano GaN PN junction

In this paper, we investigate the regulation behaviors of photoexcited nonequilibrium carriers in a GaN piezoelectric semiconductor PN junctions. It is shown that the electromechanical field of the PN junction has a fast response to the illumination intensity. This is attributed to the ultraviolet photoexcited non-equilibrium carriers, which can shield the piezoelectric charges and significantly weaken the built-in barrier height. Furthermore, the electrical transmission characteristics are also regulated. It implies that the electrical behaviors of a nano GaN PN junctions are highly sensitive to ultraviolet light, and such a contactless approach can be applied to control the nano GaN devices.