Polymorphism and stacking faults can seriously affect the physical properties of two-dimensional materials. What’s important, the biaxial strain has a significant impact on the structural transformation of two-dimensional materials and changes the related path, which ultimately leads to a phase structure different from zero strain. Also, external pressure or biaxial strain can change the crystal lattice without introducing impurities, making it a clean and controllable method for adjusting physical properties. In this paper, the AA2 and AB1 stack structures with relatively small energy are simulated by first-principles calculation to explain the isomorphic phase transition of h-BN under biaxial strain. Energy analysis shows that the AB1 stack is relatively stable without strain, and when the strain increases to 4.295 %, the AB1 stacking will spontaneously rotate into the AA2 stacking, which makes AA2 stable. By analyzing the density of states (DOS) and the electron density difference, the isomorphic phase transition is attributed to the weakening of the B–N bond by electron transfer between layers under strain conditions. The sliding behavior caused by biaxial strain at the atomic scale may be of fundamental importance for understanding the macroscopic friction behavior. In addition, the explanation of the isomorphic phase transition plays a very important role in the h-BN double layer as a future electronic and optoelectronic device material.
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