In this research work, TiO2-x-thin films are deposited through a radio-frequency magnetron sputtering technique by varying the oxygen partial pressure (pO2) of 6.0 %, 6.4 %, and 6.8 %. The X-ray diffraction analysis depicts the formation of the anatase phase of the annealed thin film with a high crystalline nature. The existence of higher oxygen vacancies and surface roughness are confirmed by the X-ray photoelectron spectroscopy and the atomic force microscopy analyses, respectively, in the 6.0 % pO2 grown thin film. At room temperature (30 °C) and dark conditions, the optimized TiO2-x-based hydrogen gas sensor device depicts a notable response of 22.9 % on exposure to 100 ppm of H2 gas. The irradiation of the ultra-violet (UV) light (λ = 365 nm) on the sensing material promotes desorption of the oxygen species and hence improves the responsivity of the sample. The highest responsivity of 87.7 %, along with faster response and recovery time of 9.4 s and 7.8 s, respectively, is achieved under the UV light irradiation and 100 ppm of H2 gas for the sample grown at 6.0 % pO2, which signifies its potential for the development of room temperature operable hydrogen gas sensor.