This study fabricates novel tris (2-phenylpyridinato-C2, N] iridium III thin films using an electron beam evaporator and investigates their structure formation, surface morphology, and linear/nonlinear optical properties. The structural features of thin films were examined using Fourier Transform spectroscopy (FTIR), x-ray diffraction (XRD), Scanning Electron Microscope (SEM). The optical c.characteristics for various doses of gamma radiation (3 kGy, 6 kGy and 9kGy) were investigated using a UV-Vis-NIR spectrophotometer in the wavelength range from 200 nm to 2500 nm. In addition, the values of fundamental energy gap (Efundamental) values showed a reduction from 2.30 to 1.92 eV and urbach energy increasing from 0.23 to 0.30 when the deposited film irradiated for 9 kGy. The third-order nonlinear susceptibility (), the nonlinear absorption coefficient () and the nonlinear refractive index () were determined for all gamma doses. Furthermore, The optical electronegativity (), the first moment (), the second moments of optical spectra (), the oscillator strength (f), the dispersion energy (), infinite dielectric constant (), oscillator energy,oscillator energy (), the lattice dielectric constant ( ), and to the effective mass for as deposited film are calculated as : 1.860, 17.29, 300.20, 0.9960 (eV)2, 4.15 eV, 4.52, 1.18 eV, 5.58, and 8.86 × 1059 kg−1 m−3 respectively. The high values of () for as deposited and irradiated are essential for the creation of low power devices for nonlinear optical applications involving ultrafast switches, optical computers, and ultra-pulsed lasers.