In this paper, Ga2O3/CH3NH3PbI3 photodetector (PD) with high external quantum efficiency (EQE) was successfully prepared by spin coating CH3NH3PbI3 on the film surface of Ga2O3/Au MSM PD. Compared with Ga2O3 film device, the dark current of heterojunction device decreased from 5.20 to 0.09nA, and the responsivity increased from 0.18 to 14.01 A/W at 40 V bias. It is worth noting that under the same bias voltage (40 V), the EQE of Ga2O3/CH3NH3PbI3 PD is as high as 6686 %, which is 78 times of Ga2O3/Au PD (85.89 %). The high EQE is attributed to collision ionization doubling caused by the effect of an applied electric field. In addition, the construction of heterojunction speeds up the response speed of PD. This work has important implications for the selection of heterogeneous materials and the construction of PDs to optimize device performance.
Read full abstract