Activation Of Implanted Ions Research Articles

Enhancing in durability of nitrated layer of parts made of alloyed steel by ion implantation activation

The study covers the comparative analysis of the laboratory surveys conducted over alloyed steel samples with nitrated layers. The layers are obtained traditionally using ion nitriding. It is suggested to activate the material’s surface layer beforehand with high-energy implantation of Nitrogen ions. The study offers models to display formation and wear of the samples compared to nitriding options. The obtained results showed the best nitriding effectiveness when the surface layer is activated beforehand with high-energy ion implantation, as it helps enhance the durability of nitrated layers in alloyed steels by approximately 3—3.7 times.

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

Ion implantation of magnesium for p‐type GaN presents many opportunities; however, activation has proven difficult due to the decomposition of GaN at relevant annealing temperatures. Herein, testing the efficacy of multiple in situ and ex situ caps based on aluminum nitride and silicon nitride for GaN protection during annealing is presented. Photoluminescence shows better activation for in situ metal organic chemical vapor deposition (MOCVD)‐grown aluminum nitride caps compared with ex situ sputtered aluminum nitride and the best performance by ex situ plasma‐enhanced chemical vapor deposition (PECVD) silicon nitride. Furthermore, only samples annealed at the highest temperatures tested show preferential growth of UV luminescence to yellow‐green luminescence reinforcing the need for better capping solutions and higher temperature annealing.

Stability of Schottky barriers at high temperatures for use in GaAs MESFET technology

The stability of Schottky barrier gates in GaAs MESFETS has been investigated to allow device processing at elevated temperatures. The incorporation of a Pt diffusion barrier into the TiAu structure gives stability of electrical characteristics up to 350°C and a Ti-W-Au contact is stable up to 400°C. To achieve higher temperature stability for use in a self aligned gate (SAG) technology, a more stable Schottky barrier material such as a TiW (30 at % Ti) alloy has been used. This has been found to be unreliable above 750°C and it has been found necessary to use a tungsten silicide contact W1.6Si (37 at % Si) to achieve reproducible Schottky contacts at the temperature used for ion implantation activation (800°C). SAGFETs have been fabricated using W1.6Si and initial results indicate good yields (91%), high gm (190 mS/mm) and good uniformity (standard deviation = 6.8% for 293 devices).