Intrinsic Performance Limits Research Articles

Intrinsic performance limits of extremely scaled field-effect transistors based on MX2 (M = {Zr, Hf}, X = {S, Se}) nanoribbons

We investigate the MX2 (M = {Hf, Zr}, X = {S, Se}) transition metal dichalcogenides patterned into armchair (AC) and zigzag (ZZ) nanoribbons (NRs) as potential channel materials in future logic field-effect devices. Ab initio quantum transport simulations are employed to assess the electronic, transport, and ballistic field-effect transistor (FET) properties of devices with such quasi-one-dimensional channels. We report a non-monotonic scaling behavior of MX2NR properties due to strong quantum confinement effects, which is reflected in a strong dependence of the ON-state current (ION) of MX2NR FETs on the nanoribbon configuration. The ∼2 nm-wide HfSe2 and ZrSe2 AC-PFETs have the highest ION of up to 2.6 mA/μm at 10 nA/μm OFF-state current. Surprisingly, MX2NR ZZ-NFETs exhibit a current increase of up to 70% when channel width is scaled down, with ION reaching 2.2 mA/μm in ∼2 nm-wide devices. The high ON-state performance is a direct consequence of high carrier injection velocity, which is explained by analyzing the band structure, transmission, and density of states. We demonstrate that nanostructured MX2 materials can be promising candidates for future logic transistors based on multi-nanowire architectures.

Advanced examination of Nb3Sn coils and conductors for the LHC luminosity upgrade: a methodology based on computed tomography and materialographic analyses

The future of particle accelerators is strongly linked to the development of high—field magnets. The European Organization for Nuclear Research (CERN) is currently developing Nb3Sn-based magnets for the high-luminosity upgrade of the large hadron collider (HL-LHC), to fully exploit its potential and surpass the intrinsic performance limitations of Nb–Ti-based magnets. The fabrication of Nb3Sn magnets is a challenging process as it requires managing the brittle and strain sensitive conductor after the reaction heat treatment to generate the superconducting phase. Accelerator magnet coils are usually manufactured following the wind-react-and-impregnate fabrication process. This reduces the difficulty of working with brittle compounds but adds uncertainties associated with volume change during phase transition and thermal expansion/contraction differentials during the temperature ramps of the heat treatment and cooldown to cryogenic temperatures. To investigate the root causes of performance limitation or degradation observed on HL-LHC magnet prototypes, several Nb3Sn-based coils have been examined. The present paper illustrates an innovative methodology of investigations of the root causes at several fabrication stages and after cooldown and powering. The approach is based on a sequence of mesoscale observations of whole coil sections by an innovative high—energy linac x-ray computed tomography, followed by materialographic assessment of internal events, geometrical distortions and potential flaws using light microscopy. Additionally, scanning electron microscopy and focused ion beam were used to analyze damage at localized positions. This comprehensive approach provides an in-depth view of the examined coils by characterizing atypical features and imperfections in both the strands and the glass fiber/resin of the insulation system, univocally associating the limiting quenches experienced by the coils to identified physical events.

(Invited) Improving Our Understanding of Conducting Polymer Binders

As lithium-ion batteries reach their intrinsic performance limits, next-generation battery technology arises that relies much more strongly on the electrode matrix. Traditional compositions of binders and conductive additives with non-polar surfaces face intrinsic obstacles in these developments. In many next-generation electrode formulations, this incompatibility reveals itself through particle disconnection, increased electrode inhomogeneity1, and conductive additive agglomeration2. Conducting polymers are an apparent solution to such problems. Conducting polymers and their composites can be designed to exhibit increased adhesion, stronger interactions with active material surfaces and electrolytes, and favorable mechanical properties, while providing electronic connectivity at the adhesive contact with the active material3. Many examples have been presented in the literature that demonstrate improved electrode performance using such composites4–6.A common form of conducting polymer composites combines an intrinsically conductive polymer (e.g. polypyrrole, polythiophene, polyaniline) with a polyelectrolyte (e.g. polacrylate, polystyrene sulfonate, carboxymethyl cellulose). This presentation discusses an exploration of some of the fundamental properties of composites of polypyrrole with carboxymethyl cellulose. The work shows intrinsically favorable properties of the composite for application in batteries7. Among those properties are that it can be easily processed in water and N-methyl-2-pyrrolidone, exhibits better adhesion to the current collector, shows competitive conductivity and distributes evenly across active materials. However, it will also be shown that the native structure of this composite is not ideal for long-range conduction and that improvement can be made to the material’s conductivity and capacitance8.Our work is targeting a more complete understanding of the properties of these composites as they are employed in battery environments. It demonstrates enormous promise for the use of conducting polymers as binders, but also gaps in our understanding of their interactions with electrolytes and active materials that need to be addressed to advance their impact on the development of next-generation batteries.

Traps for Electrons and Holes Limit the Efficiency and Durability of Polymer Light‐Emitting Electrochemical Cells

AbstractPolymer light‐emitting electrochemical cells (PLECs) and light‐emitting diodes (PLEDs) receive interest for large‐area lighting and signage applications. During operation of a PLEC, a p–i–n junction develops where electrons and holes are injected into the film and are transported along n‐ and p‐doped regions to the intrinsic (i) region, where they recombine under light emission. Conceptually, this resembles the PLED device architecture equipped with Ohmic charge‐injection and transport layers. The similarity between the i‐region of the PLEC and the emissive layer of the PLED is obvious; however, implication of this has not been examined in detail so far. For example, for PLEDs it is known that electron traps hinder the electron transport, and that hole trap formation dictates the long‐term durability. Here, for PLECs the electrical and optical response to electrical driving and breaks are studied, the current response to external light irradiation is probed, and degradation is followed with long‐term absorption and capacitance measurements. The electron traps in PLECs are identified and it is found that hole trap formation limits the device lifetime, in the same manner as established for PLEDs. It is concluded that charge traps in semiconducting polymers present important, but so far overlooked intrinsic performance limitations for PLECs.

PID passivity‐based droop control of power converters: Large‐signal stability, robustness and performance

AbstractWe present a full review of PID passivity‐based controllers (PBC) applied to power electronic converters, discussing limitations, unprecedented merits and potential improvements in terms of large‐signal stability, robustness and performance. We provide four main contributions. The nominal case is first considered and it is shown—under the assumption of perfect knowledge of the system parameters—that the PID‐PBC is able to guarantee global exponential stability of a desired operating point for any positive gains. Second, we analyze robustness of the controller to parameters uncertainty for a specific class of power converters, by establishing precise stability margins. Third, we propose a modification of the controller by introducing a leakage, in order to overcome some of the intrinsic performance and robustness limitations. Interestingly, such controller can be interpreted at steady‐state as a droop between the input and the passive output, similar to traditional primary controllers. Fourth, we robustify the design against saturation of the control input via an appropriate monotone transformation of the controller. The obtained results are thoroughly discussed and validated by simulations on two relevant power applications: a DC/DC boost converter and an HVDC grid‐connected voltage source converter.

In Operando Angle‐Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle‐resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8° to 12.7°. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/μm at the rotational domain boundaries in the device. These proof‐of‐principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.

Accurate Power-Efficient Format-Scalable Multi-Parallel Optical Digital-to-Analogue Conversion

In optical transmitters generating multi-level constellations, optical modulators are preceded by Electronic Digital-to-Analog-Converters (eDAC). It is advantageous to use eDAC-free Optical Analog to Digital Converters (oDAC) to directly convert digital bitstreams into multilevel PAM/QAM optical signals. State-of-the-art oDACs are based on Segmented Mach-Zehnder-Modulators (SEMZM) using multiple modulation segments strung along the MZM waveguides to serially accumulate binary-modulated optical phases. Here we aim to assess performance limits of the Serial oDACs (SEMZM) and introduce an alternative improved Multi-Parallel oDAC (MPoDAC) architecture, in particular based on arraying multiple binary-driven MZMs in parallel: Multi-parallel MZM (MPMZM) oDAC. We develop generic methodologies of oDAC specification and optimization encompassing both SEMZM and MPMZM options in Direct-Detection (DD) and Coherent-Detection (COH) implementations. We quantify and compare intrinsic performance limits of the various serial/parallel DD/COH subclasses for general constellation orders, comparing with the scant prior-work on the multi-parallel option. A key finding: COH-MPMZM is the only class synthesizing ‘perfect’ (equi-spaced max-full-scale) constellations while maximizing energy-efficiency-SEMZM/MPMZM for DD are less accurate when maximal energy-efficiency is required. In particular, we introduce multiple variants of PAM4|8 DD and QAM16|64 COH MPMZMs, working out their accuracy vs. energy-efficiency-and-complexity tradeoffs, establishing their format-reconfigurability (format-flexible switching of constellation order and/or DD/COH).

GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon.

We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance limitations of the organic active layer. The dependence of photovoltaic performance enhancement on the morphology of the nanostructure with nanowire diameters 30, 50, 60, 100 and 150 nm was studied in detail. The short circuit current was enhanced by a factor of 4.25, while an open circuit voltage increase by 0.32 volts was achieved compared to similar planar layers.

Optimization and performance study of a proton CT system for pre-clinical small animal imaging

Proton computed tomography (pCT) promises to reduce or even eliminate range uncertainties inherent in the conversion of Hounsfield units into relative stopping power (RSP) for proton therapy treatment planning. This is of particular interest for proton irradiation studies in animal models due to the high precision required and uncertainties in tissue properties.We propose a dedicated single-particle tracking pCT system consisting of low material budget floating strip Micromegas detectors for tracking and a segmented time-projection-chamber with vertical Mylar absorbers, functioning as a range telescope. Based on Monte Carlo simulations of a realistic in silico beam and detector implementation, a geometrical optimization of the system components was conducted to safeguard an ideal operation close to intrinsic performance limits at 75 MeV. Moreover, the overall imaging capabilities relevant for pre-clinical proton therapy treatment planning were evaluated for a mouse model.In order to minimize extrinsic uncertainties in the estimated proton trajectories, a spacing of the two tracking planes of at least 7 cm is required in both tracking detectors. Additionally, novel in-house developed and produced aluminum-based readout electrodes promise superior performance with around 3 mm−1 spatial resolution due to the reduced material budget. Concerning the range telescope, an absorber thickness within 500 µm to 750 µm was found to yield the best compromise between water-equivalent path length resolution and complexity of the detector instrumentation, still providing sub-0.5% RSP accuracy. The optimized detector configuration enables better than 2% range accuracy for proton therapy treatment planning in pre-clinical data sets.This work outlines the potential of pCT for small animal imaging. The performance of the proposed and optimized system provides superior treatment planning accuracy compared to conventional x-ray CT. Thus, pCT can play an important role in translational and pre-clinical cancer research.

Charge Carrier Lifetimes in Cr-Fe-Al-O Thin Films.

The effect of compositional variation on charge carrier lifetimes of Cr1Fe0.84Al0.16O3, a promising material for solar water splitting recently identified using combinatorial materials science, is explored using ultrafast time-resolved optical reflectance. The transient signal can be described by a biexponential decay, where the shorter time constant varies over 1 order of magnitude with changing Cr content while the longer one stays constant. Intrinsic performance limitations such as a low charge carrier mobility on the order of 10-3 cm2/(Vs) are identified. Charge carrier lifetime and mobility are discussed as screening criteria for solar water splitting materials.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study

Understanding the origin of intrinsic limits of alloy disorder and localization is important for engineering band gap and quantum confinement in semiconductor heterostructures. The authors propose a set of attributes, relatively easy computed from first principles, to characterize and compare disorder in different alloys. This leads to a quantitative explanation for the stronger localization in dilute bismide alloys versus dilute nitrides. The authors also emphasize a link between intrinsic disorder and performance limitations in optical-gain materials for telecommunication applications.

Design constraints and limits of networked feedback in disturbance attenuation: An information-theoretic analysis

In this paper we investigate the intrinsic design constraints and performance limits of networked control systems. We propose new information measures and correspondingly, develop an information-theoretic paradigm for analyzing the performance trade-offs and limits in disturbance attenuation over information-constrained networked feedback, which is enabled by a cohesive development of new information measures, Bode-type integral inequalities, and performance bounds. The integrals and bounds incorporate the information measures and serve to quantify the trade-offs and limits in disturbance attenuation for broad classes of networked feedback systems consisting of linear time-invariant plants and causal, possibly nonlinear, time-varying stabilizing controllers communicating over general noisy channels with causal encoders and decoders. The notion of negentropy rate is introduced to address general, non-Gaussian disturbances. The channel blurredness, a newly proposed information measure for the quality of communication channels, is used to characterize the effect of communication channel noises on the integrals and henceforth the trade-offs in disturbance attenuation. Bounds on the power gain, a novel disturbance attenuation measure tailored for performance analysis of networked control systems, provide the fundamental limits of disturbance attenuation achievable by networked feedback.

Intrinsic Performance Limitations of Torque Generation in a Turbocharged Gasoline Engine

The main control variable for combustion engines is the generated torque, as it has to follow the driver’s desire. For turbocharged gasoline engines, the torque generation is directly related to the air charge in the cylinder, since for emission reduction a stoichiometric ratio of fuel and air has to be met. However, controlling the air charge by the actuators in the air path, an inverse response behavior of the torque may be observed. This indicates an unstable zero dynamics or non-minimum phase behavior of the system. Plants with unstable zero dynamics impose limitations in achievable control performance and many control methods are not applicable. Therefore, a semi-physical mean value model of the engine is investigated to determine the existence and stability of zero dynamics and the consequences for control.

Enhancing Organic Solar Cells with Plasmonic Nanomaterials

AbstractPlasmonic nanomaterials may offer promising routes to address the intrinsic performance limitations of conventional organic solar cells. Specifically, plasmonic materials have been widely exploited for the effective promotion of photon absorption in the organic active layers. For the further progress of plasmonic enhancement of organic solar cells, hybrid nanostructures integrating more than two different components are highly necessary for tailoring the outstanding optical and other relevant properties. In this Focus Review article, we highlight recent research on the synergistic benefits from plasmonic hybrid nanostructures, such as multimetal nanoparticles, clustered metal nanoparticles, and carbon–metal nanohybrids for desirable charge generation and charge transport/collection in organic solar cells.

Recent Innovations in Leading-Edge Silicon Devices

The first 45-nm logic devices were introduced in 2007, followed more recently by 40-nm and 32/28-nm products. These nodes are notable for the introduction of high-k dielectrics and metal gate into the transistor structure, and the adoption of second-generation low-k dielectric layers. Soon we expect to see the first 22-nm FinFET products. Also, we are now in the era of 20-nm flash memory and 30-nm DRAM. Chipworks, as a supplier of competitive intelligence to the semiconductor and electronics industries, monitors the evolution of chip processes as they come into commercial production. The paper illustrates (with SEM and TEM imaging) some of the materials and structural changes that have taken place in recent years as silicon heads towards its intrinsic performance limits. It will deal with the evolution of the transistor structure from the 45-nm to the 28-nm generations, and review the latest 3x-nm DRAM technology and 2x-nm flash devices.

Courtship dives of Anna's hummingbird offer insights into flight performance limits

Behavioural displays are a common feature of animal courtship. Just as female preferences can generate exaggerated male ornaments, female preferences for dynamic behaviours may cause males to perform courtship displays near intrinsic performance limits. I provide an example of an extreme display, the courtship dive of Anna's hummingbird (Calypte anna). Diving male Anna's hummingbirds were filmed with a combination of high-speed and conventional video cameras. After powering the initial stage of the dive by flapping, males folded their wings by their sides, at which point they reached an average maximum velocity of 385 body lengths s(-1) (27.3 m s(-1)). This is the highest known length-specific velocity attained by any vertebrate. This velocity suggests their body drag coefficient is less than 0.3. They then spread their wings to pull up, and experienced centripetal accelerations nearly nine times greater than gravitational acceleration. This acceleration is the highest reported for any vertebrate undergoing a voluntary aerial manoeuvre, except jet fighter pilots. Stereotyped courtship behaviours offer several advantages for the study of extreme locomotor performance, and can be assessed in a natural context.

Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices

Nanowires represent a promising class of materials for exploring new concepts in solar energy conversion. Here we report the first experimental realization of axial modulation-doped p-i-n and tandem p-i-n(+) -p(+)-i-n silicon nanowire (SiNW) photovoltaic elements. Scanning electron microscopy images of selectively etched nanowires demonstrate excellent synthetic control over doping and lengths of distinct regions in the diode structures. Current-voltage (I-V) characteristics reveal clear and reproducible diode characteristics for the p-i-n and p-n SiNW devices. Under simulated one-sun solar conditions (AM 1.5G), optimized p-i-n SiNW devices exhibited an open circuit voltage (Voc) of 0.29 V, a maximum short-circuit current density of 3.5 mA/cm(2), and a maximum efficiency of 0.5%. The response of the short-circuit current versus Voc under varying illumination intensities shows that the diode quality factor is improved from n=1.78 to n=1.28 by insertion of the i-type SiNW segment. The temperature dependence of Voc scales as -2.97 mV/K and extrapolates to the crystalline Si band gap at 0 K, which is in excellent agreement with bulk properties. Finally, a novel single SiNW tandem solar cell consisting of synthetic integration of two photovoltaic elements with an overall p-i-n(+) -p(+)-i-n structure was prepared and shown to exhibit a Voc that is on average 57% larger than that of the single p-i-n device. Fundamental studies of such well-defined nanowire photovoltaics will enable their intrinsic performance limits to be defined.

Intrinsic and extrinsic performance limits of graphene devices on SiO2

The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2 microm and an intrinsic mobility limit of 2 x 105 cm2 V-1 s-1. If realized, this mobility would exceed that of InSb, the inorganic semiconductor with the highest known mobility ( approximately 7.7 x 104 cm2 V-1 s-1; ref. 9) and that of semiconducting carbon nanotubes ( approximately 1 x 105 cm2 V-1 s-1; ref. 10). A strongly temperature-dependent resistivity contribution is observed above approximately 200 K (ref. 8); its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate and limit the room-temperature mobility to approximately 4 x 104 cm2 V-1 s-1, indicating the importance of substrate choice for graphene devices.

１入力多出力線形離散時間系のＨ２制御性能限界

This paper is concerned with intrinsic control performance limitations achievable by feedback for single-input and multi-output (SIMO) possibley unstable and non-minimum phase linear discrete-time systems. We investigate two typical H2 optimal control problems, namely optimal tracking control problem and minmal energy control problem. We derive closed-form analytical expressions of the best achievable tracking error and minmal energy H2 norms. The former consists of plant gain as well as unstable poles and non-minimum phase zeros of the plant, while the latter is only given by unstable poles and non-minimum phase zeros of the plant. Those results are confirmed by several numerical examples, and they characterize easiness and difficulty of plants to be controlled.