Intrinsic Anomalous Hall Effect Research Articles

Intrinsic Anomalous Hall Effect Arising from Antiferromagnetism as Revealed by High-Quality NbMnP

Intrinsic Anomalous Hall Effect Arising from Antiferromagnetism as Revealed by High-Quality NbMnP

The Impact of Local Strain Fields in Noncollinear Antiferromagnetic Films.

Antiferromagnets hosting structural or magnetic order that breaks time reversal symmetry are of increasing interest for "beyond von Neumann" computing applications because the topology of their band structure allows for intrinsic physical properties, exploitable in integrated memory and logic function. One such group are the noncollinear antiferromagnets. Essential for domain manipulation is the existence of small net moments found routinely when the material is synthesized in thin film form and attributed to symmetry breaking caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or from strain. Although the spin arrangement of these materials makes them highly sensitive to strain, there is little understanding about the influence of local strain fields caused by lattice defects on global properties, such as magnetization and anomalous Hall effect. This premise is investigated by examining noncollinear antiferromagnetic films that are either highly lattice mismatched or closely matched to their substrate. In either case, edge dislocation networks are generated and for the former case, these extend throughout the entire film thickness, creating large local strain fields. These strain fields allow for finite intrinsic magnetization in seemingly structurally relaxed films and influence the antiferromagnetic domain state and the intrinsic anomalous Hall effect.

Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect

Two-dimensional intrinsic magnetic topological materials that can realize device miniaturization have attracted significant attention recently based on their chiral dissipationless edge states. However, since the experimental observation of quantum anomalous Hall effect (QAHE) is still limited by low temperature, high operating temperature and large nontrivial gap are urgently needed. Here, monolayer MnAsO3 is predicted to be a room-temperature intrinsic magnetic topological material with high Chern number C = 3 based on first-principles calculations, which offers the possibility of achieving high-speed and low-energy-consumption electron transport in the future. Furthermore, the large and experimental feasible nontrivial gap up to 79.09 meV is obtained under compressive strain modulation. Moreover, the high-Chern-number topological phase transition and strain-induced spin-unlocked edge states are observed, indicating the possibility of tuning the electron transport of QAHE. All these findings suggest that monolayer MnAsO3 is a suitable and promising material for fabricating low-energy-consumption spintronics devices.

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.

Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV6Sn6 (R = Gd, Tb)

Exploration of exotic phenomena in magnetic topological systems is at the frontier of condensed matter physics, holding a significant promise for applications in topological spintronics. However, complex magnetic structures carrying nontrivial topological properties hinder its progresses. Here, we investigate the pressure effect on the novel topological kagome magnets GdV6Sn6 and TbV6Sn6 to dig out the interplay between magnetic Gd/Tb layers and nonmagnetic V-based kagome sublattice. The pressure-tuned magnetic transition temperature T m in both the compounds exhibit a turning point at the critical pressure P c, accompanied with a sign reversal in anomalous Hall effect (AHE). The separation of intrinsic and extrinsic contributions using the Tian–Ye–Jin scaling model suggests that the intrinsic mechanism originating from the electronic Berry curvature holds the priority in the competition with extrinsic mechanism in AHE. The above-mentioned findings can be attributed to the combined effect of pressure-tuned band topology and magnetic interaction in segregated layers. Our results provide a practical route to design and manipulate the intrinsic AHE in magnetic topological materials.

Quantum-Geometry-Induced Anomalous Hall Effect in Nonunitary Superconductors and Application to Sr_{2}RuO_{4}.

The polar Kerr effect and the closely related anomalous charge Hall effect are among the most distinguishing signatures of the superconducting state in Sr_{2}RuO_{4}, as well as in several other compounds. These effects are often thought to be derived from chiral superconducting pairing, and different mechanisms have been invoked for the explanation. However, the intrinsic mechanisms proposed previously often involve unrealistically strong interband Cooper pairing. We show in this Letter that, even without interband pairing, nonunitary superconducting states can support the intrinsic anomalous charge Hall effect, thanks to the quantum geometric properties of the Bloch electrons. The key here is to have a normal-state spin Hall effect, for which a nonzero spin-orbit coupling is essential. A finite charge Hall effect then naturally arises at the onset of a spin-polarized nonunitary superconducting pairing. It depends on both the spin polarization and the normal-state electron Berry curvature, the latter of which is the imaginary part of the quantum geometric tensor of the Bloch states. Applying our results to the weakly paired Sr_{2}RuO_{4} we conclude that, if the reported Kerr effect is of intrinsic origin, the superconducting state is most likely nonunitary and has odd parity. Our theory may be generalized to other superconductors that exhibit the polar Kerr effect.

Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet Fe_{3}Sn_{2}.

It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe_{3}Sn_{2} displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects.

Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe4CoGeTe2.

Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (∼323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.

Intrinsic valley polarization and anomalous valley Hall effect in monolayer [formula omitted]-ScAt[formula omitted

Materials with spontaneous polarization is very promising in valley electronics because of its potential application in encoding and storing information. In this paper, we proposed a stable two-dimensional ferromagnetic valley material H-ScAt2 which can spontaneously generate valley splitting and exhibit intrinsic anomalous Hall effect. The valley polarization is 0.245 eV, which is large than most of the reported materials. The structural stability is verified by our phonon and molecular dynamic calculation. The Curie temperature of H-ScAt2 monolayer is about 840 K, which is above room temperature.

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films.

The anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator. However, the origin of its intriguing AHE behaviors remains elusive. Here, we demonstrate the Berry curvature-dominated intrinsic AHE in wafer-scale MnBi2Te4 films. By applying back-gate voltages, we observe an ambipolar conduction and n-p transition in ∼7-layer MnBi2Te4, where a quadratic relation between the AHE resistance and longitudinal resistance suggests its intrinsic AHE nature. In particular, for ∼3-layer MnBi2Te4, the AHE sign can be tuned from pristine negative to positive. First-principles calculations unveil that such an AHE reversal originated from the competing Berry curvature between oppositely polarized spin-minority-dominated surface states and spin-majority-dominated inner bands. Our results shed light on the underlying physical mechanism of the intrinsic AHE and provide new perspectives for the unconventional sign-tunable AHE.

Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘH ≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications.

Anomalous Nernst effect in honeycomb and kagome magnet LaCo5 at room temperature

Magnetic order-induced time reversal symmetry breaking in the kagome lattice is predicted to generate Weyl semimetal and Chern insulating phases. The two-dimensional (2D) honeycomb lattices with spin orbit coupling (SOC) and ferromagnetism are also known to host the Chern insulating phase. Here, we study the transport properties of the ferromagnetic topological material LaCo5 crystals with TC = 840 K, which is the highest among the reported magnetic topological materials up to now. It is composed of 2D Co2 kagome layers that are separated by La–Co1 layers, in which the Co1 atoms exhibit a honeycomb structure. Both the 2D kagome and honeycomb layers exhibit out-of-plane magnetization. The large intrinsic anomalous Hall effect and anomalous Nernst effect of about 4.6 μVK−1 are observed in the ab plane with the B//c configuration at room temperature, which can be attributed to non-zero Berry curvature according to the first-principles calculations. Our results enrich the magnetic topological materials with honeycomb and kagome lattices, providing a good platform for the further study of the QAHE. The excellent thermoelectric performance, high TC, nontoxicity, and low cost also make LaCo5 a promising candidate for the applications of thermoelectric generators and heat flow sensors at high temperatures.

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

The Fe3GeTe2 monolayer, a ferromagnetic topological candidate with a high Curie temperature of 130 K, has recently garnered considerable interest. We investigated the impact of strain on the electronic, magnetic, and topological properties of the Fe3GeTe2 monolayer using density functional theory calculations. Our results showed that the Fe3GeTe2 monolayer was an itinerant ferromagnet with a high spin polarization of 69.93% and out-of-plane easy magnetization. Tensile strain had no profound impact on the anomalous Hall conductivity (AHC). However, when applying a compressive biaxial strain of −3%, the AHC at the Fermi level was dramatically enhanced to 1.62 e2/h, which is much larger than that of the bulk (0.7 e2/h) and bilayer (1.5 e2/h) material. The large AHC nearly coincided with the singularity of the energy bands near the M point. Our results highlight the potential of using strain engineering to control and optimize the properties of two-dimensional topological materials.

Magnetism and berry phase manipulation in an emergent structure of perovskite ruthenate by (111) strain engineering

The interplay among symmetry of lattices, electronic correlations, and Berry phase of the Bloch states in solids has led to fascinating quantum phases of matter. A prototypical system is the magnetic Weyl candidate SrRuO3, where designing and creating electronic and topological properties on artificial lattice geometry is highly demanded yet remains elusive. Here, we establish an emergent trigonal structure of SrRuO3 by means of heteroepitaxial strain engineering along the [111] crystallographic axis. Distinctive from bulk, the trigonal SrRuO3 exhibits a peculiar XY-type ferromagnetic ground state, with the coexistence of high-mobility holes likely from linear Weyl bands and low-mobility electrons from normal quadratic bands as carriers. The presence of Weyl nodes are further corroborated by capturing intrinsic anomalous Hall effect, acting as momentum-space sources of Berry curvatures. The experimental observations are consistent with our first-principles calculations, shedding light on the detailed band topology of trigonal SrRuO3 with multiple pairs of Weyl nodes near the Fermi level. Our findings signify the essence of magnetism and Berry phase manipulation via lattice design and pave the way towards unveiling nontrivial correlated topological phenomena.

Three-Dirac-fermion approach to unexpected universal gapless surface states in van der Waals magnetic topological insulators

Layered van der Waals (vdW) topological materials, especially the recently discovered MnBi2Te4-family magnetic topological insulators (TIs), have aroused great attention. However, there has been a serious debate about whether the surface states are gapped or gapless for antiferromagnetic (AFM) TI MnBi2Te4, which is crucial to the prospect of various magnetic topological phenomena. Here, a minimal three-Dirac-fermion approach is developed to generally describe topological surface states of nonmagnetic/magnetic vdW TIs under the modulation of the interlayer vdW gap. In particular, this approach is applied to address the controversial issues concerning the surface states of vdW AFM TIs. Remarkably, topologically protected gapless Dirac-cone surface states are found to arise due to a small expansion of the interlayer vdW gap on the surface, when the Chern number equals zero for the surface ferromagnetic layer; while the surface states remain gapped in all other cases. These results are further confirmed by our first-principles calculations on AFM TI MnBi2Te4. The theorectically discovered gapless Dirac-cone states provide a unique mechanism for understanding the puzzle of the experimentally observed gapless surface states in MnBi2Te4. This work also provides a promising way for experiments to realize the intrinsic magnetic quantum anomalous Hall effect in MnBi2Te4 films with a large energy gap.

Hall conductivity as the topological invariant in magnetic Brillouin zone in the presence of interactions

Hall conductivity for the intrinsic anomalous quantum Hall effect in homogeneous systems is given by the topological invariant composed of the Green function depending on momentum of quasiparticle. This expression reveals correspondence with the mathematical notion of the degree of mapping. A more involved situation takes place for the quantum Hall effect in the presence of external magnetic field. In this case, the mentioned expression remains valid if the Green function is taken in a specific representation, where it becomes the infinite-dimensional matrix [N. Imai et al., Phys. Rev. B 42, 10610 (1990)] or if it is replaced by its Wigner transformation while ordinary products are replaced by the Moyal products [M. A. Zubkov and X. Wu, Ann. Phys. 418, 168179 (2020)]. Both these expressions, unfortunately, are much more complicated and might be useless for the practical calculations. Here we represent the alternative representation for the Hall conductivity of a uniform system in the presence of constant magnetic field. The Hall conductivity is expressed through the Green function taken in Harper representation, when its nonhomogeneity is attributed to the matrix structure while functional dependence is on one momentum that belongs to magnetic Brillouin zone. Our consideration for the interacting systems is nonperturbative and is based on the Schwinger-Dyson equations truncated in a reasonable way. We demonstrate that in this approximation the expression for the Hall conductivity in Harper representation remains valid, where the interacting Green function is to be used instead of the noninteracting one. We, therefore, propose that the obtained expression may be used for the topological description of fractional quantum Hall effect.

Anomalous Hall effect in ferromagnetic LaCo2As2 and ferrimagnetic NdCo2As2

Abstract We conducted a comparative study of the magnetic and transport properties of single-crystalline LaCo2As2 and NdCo2As2. LaCo2As2 is a soft metallic ferromagnet which exhibits purely intrinsic anomalous Hall effect (AHE) due to Co-3d electrons. With Nd-4f electronic magnetism, ferrimagnetic NdCo2As2 manifests pronounced sign reversal and multiple hysteresis loops in temperature and field dependent magnetization, Hall resistivity and magnetoresistance, due to complicated magnetic structural changes. We reveal that the AHE for NdCo2As2 is stemming from the Co sub-lattice and deduce its phase diagram which includes magnetic compensation and two meta-magnetic phase transitions. The sensitivity of the Hall effect on the details of the magnetic structures in ferrimagnetic NdCo2As2 provides a unique opportunity to explore the magnetic interaction between 4f and 3d electrons and its impact on the electronic structure.

Microscopic mechanism for intrinsic nonlinear anomalous Hall conductivity in noncollinear antiferromagnetic metals

We theoretically investigate an intrinsic nonlinear anomalous Hall effect (INAHE) in space-time ($\mathcal{PT}$) symmetric antiferromagnetic metals. The INAHE is characterized by an asymmetric and nondissipative part of the second-order electric conductivity tensor in the clean limit in contrast to the Drude-type symmetric conductivity tensor with dissipation. By introducing a multipole description, we show that the emergence of the INAHE is due to active odd-parity magnetic quadrupoles or magnetic toroidal dipoles under magnetic orderings. In order to clarify the microscopic origin of the INAHE, we specifically consider a fundamental tight-binding model of a three-dimensional tetragonal system. We demonstrate that the INAHE arises from the effective coupling between magnetic ordering and antisymmetric spin-orbit interaction. We also discuss essential electron hopping paths driving the INAHE.

Intrinsic Rashba effect and anomalous valley Hall effect in one-dimensional magnetic nanoribbon

Stable one-dimensional (1D) magnetic nanoribbons are superior to the two-dimensional (2D) or bulk materials due to the quantum size effect and edge effect as well as the controllable bandwidth. Through first-principles calculations, Wannier functions and Monte Carlo simulation, it is found that the GdX2 (X = Cl, Br) zigzag nanoribbons (ZNRs) are dynamically stable, with Curie temperature of ferromagnetic ground state significantly higher than that of their 2D counterpart. The results show that inherent transverse dipole moment and perpendicular magnetocrystalline anisotropy energy (PMAE) induce the coexistence of Rashba effect and valley polarization in such 1D magnetic ZNRs. GdBr2 ZNR with four zigzag chains (GdBr2-4ZNR) has larger valley splitting and PMAE than that of GdCl2-4ZNR, demonstrating room temperature ferromagnetic ground state. Through regulating the bandwidth of GdBr2 ZNR, intrinsic anomalous valley Hall (AVH) effect is observed in GdBr2-5ZNR. Importantly, Dirac-cone-like electronic states, PMAE and AVH effect are robust against the increment of nanoribbon bandwidth which is essential for utilization. These results provide important insights and pave an avenue for the potential application of magnetic nanoribbons in spin-dependent and valley-dependent miniature information storage devices.