In polycrystalline materials, void growth is strongly dependent on its surrounding microstructural environment such as grain morphologies, crystallographic orientations and void-grain boundary (GB) relative position. In this study, two kinds of void-GB relative positions are considered to investigate the orientation effect on void growth in FCC polycrystals: intragranular type, i.e., void located in interior of a grain; and intergranular type, i.e., void located at boundary of two adjacent grains. The analysis of orientation effect in intragranular (resp. intergranular) cases is conducted through a comparative study with single-crystal (resp. bi-crystal) counterparts. Moreover, the competition between the intragranular and intergranular void growth behaviors is statistically investigated for the first time. To this end, the representative volume element (RVE) of polycrystalline aggregates containing either intragranular or intergranular void is created by 3D Voronoi tessellation. Multiple realizations with different grain morphologies and crystallographic orientation permutations are implemented using crystal plasticity finite element (CPFE) simulations. We show that the mechanism for orientation effect on void growth in single crystals (resp. bi-crystals) is not preserved in intragranular (resp. intergranular) cases. According to the statistical analysis, both the intragranular and intergranular void growth follows a Gaussian distribution, whose profile is affected by both macroscopic stress triaxiality and Lode parameter. It is revealed that the statistical void growth distribution induced by random grain morphologies and crystallographic orientations is closely associated with the void-GB relative position (intragranular or intergranular). The present study may provide much richer insights into the mechanism of damage evolution in polycrystalline metals.
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