Interfacial Potential Barrier Research Articles

Au‐Free Ti/Al/Ni/TiN Ohmic Contact to AlGaN/GaN Heterostructure: Ti/Al Thicknesses at an Optimized Ratio

Although a few studies report that tuning Ti/Al thicknesses at a fixed ratio can further improve the Ohmic contact to AlGaN/GaN heterostructure, systematic physical mechanisms have not been reported. In this work, after determining the optimal Ti/Al ratio of 1/4, two metal stacks with varying Ti/Al thicknesses and fixed Ni/TiN thicknesses are deposited to investigate how tuning Ti/Al thicknesses at an optimized ratio enhances the Ohmic contact performance. At the optimal annealing condition (950 °C, 45 s) of samples with Ti/Al thicknesses of 20/80 nm, samples with Ti/Al thicknesses of 35/140 nm exhibit a reduction of 48% in contact resistance and 70% in specific contact resistivity (ρc). By correlating the results from ρc–T measurements, time‐of‐flight secondary ion mass spectrometry, and high‐resolution X‐ray diffraction, it has been determined that this method effectively enables N‐vacancies doping into the heterostructure, thereby increasing the carrier concentration and reducing both the height and width of the interfacial potential barrier, achieving a more efficient carrier transport. By avoiding the use of Au with high solubility and ductility, this approach significantly improves contact performance without adversely affecting the electrode surface morphology, demonstrating good adaptability for optimizing Au‐free Ohmic contacts.

Self-Adaptive Magnetic Liquid Metal Microrobots Capable of Crossing Biological Barriers and Wireless Neuromodulation.

Magnetic liquid-bodied microrobots (MRs) possess nearly infinite shape adaptivity. However, they currently confront the risk of structure instability/crushes during shape-morphing in tiny biological environments. This article reports that magnetic liquid metal (LM) MRs (LMMRs) show high structure stability and robust magnetic maneuverability. In this protocol, Fe nanoparticles are encapsulated inside less-than-10-μm LM microdroplets by establishing interfacial chemical potential barriers, yielding LMMRs. Their robust magnetic maneuverability originates from the magnetically controlled assembly of Fe nanoparticles inside LM and distinct liquid-solid interaction. With the self-adaptive shape-recovering capabilities even after 50% deformation, LMMRs can implement vertical climbing over walls up to 400% of its body length and traverse channels with the size of its two-thirds. The in vitro and in vivo experiments have both verified the effective magneto-mechanical stimulation of LMMRs upon neurons after their shape-adaptive crossing the blood-brain barrier under a driven magnetic field. Our work provides a promising strategy for wireless therapies with MRs by safely and effectively overcoming biological barriers.

High sensitivity and selectivity of h-BN/WO3 n-n heterojunction to triethylamine at low-temperature

Due to the unique properties of heterojunction interfaces, heterojunction materials have broad application prospects in gas sensors. In this work, a facile and economical two-step synthesis method was employed to fabricate h-BN/WO3 heterojunctions, exhibiting excellent performance in triethylamine (TEA) detection. The results indicate that compared to pure WO3 sensors, h-BN/WO3 sensors exhibit superior TEA sensing capabilities, with an excellent response of 281.45 to 20 ppm TEA at 100 °C, which is 3.4 times higher. Moreover, h-BN/WO3 sensors demonstrate favorable response times, low detection limits, and good stability. These significant enhancements are attributed to the increase in oxygen vacancies and the establishment of heterojunctions between h-BN and WO3. Heterojunctions can regulate the concentration and transport rate of charge carriers, as well as the interface potential barrier, thereby affecting the gas sensing processes. This work may promote the further development of sensing materials and the practical application of WO3 sensors in TEA detection.

Surface plasmon-mediated photoluminescence boost in graphene-covered CsPbBr3 quantum dots

The optical properties of graphene (Gr)-covered CsPbBr3 quantum dots (QDs) were investigated using micro-photoluminescence spectroscopy, revealing a remarkable three orders of magnitude enhancement in photoluminescence (PL) intensity compared to bare CsPbBr3 QDs. To elucidate the underlying mechanisms, we combined experimental techniques with density functional theory (DFT) calculations. DFT simulations showed that the graphene layer generates interfacial electrostatic potential barriers when in contact with the CsPbBr3 surface, impeding carrier leakage from perovskite to graphene and enhancing radiative recombination. Additionally, graphene passivates CsPbBr3 surface defect states, suppressing nonradiative recombination of photo-generated carriers. Our study also revealed that graphene becomes n-doped upon contact with CsPbBr3 QDs, activating its plasmon mode. This mode resonantly couples with photo-generated excitons in the perovskite. The momentum mismatch between graphene plasmons and free-space photons is resolved through plasmon scattering at Gr/CsPbBr3 interface corrugations, facilitating the observed super-bright emission. These findings highlight the critical role of graphene as a top contact in dramatically enhancing CsPbBr3 QDs’ PL. Our work advances the understanding of graphene-perovskite interfaces and opens new avenues for designing high-efficiency optoelectronic devices. The multifaceted enhancement mechanisms uncovered provide valuable insights for future research in nanophotonics and materials science, potentially leading to breakthroughs in light-emitting technologies.

Conduction band electronic states of ultrathin furan-phenylene co-oligomer on the surfaces of oxidized silicon and of layer-by-layer grown zinc oxide

The paper reports on results of an investigation of the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene (FP5) and the results of an investigation of the interfacial potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and of layer-by-layer deposited ZnO. Upon deposition of an 8–10 nm thick FP5 film, the total current spectroscopy (TCS) technique was used for investigation within the energy range from 5 eV to 20 eV above EF. FP5 films on the (SiO2)n-Si surface showed a domain structure with a characteristic domain size of the order of 1 micro.m × 1 micro.m and a surface roughness within the domain under 1 nm. In contrast, FP5 on the ZnO surface showed a granular structure with a grain height of 40–50 nm.

Exceptional figure of merit achieved in boron-dispersed GeTe-based thermoelectric composites

GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm−1K−1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm−1K−2 at 300 K). Consequently, we obtain a maximum figure of merit Zmax of 4.0 × 10−3 K−1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.

Fabrication of close-contact S-scheme Cr2Bi3O11-Bi2O3/Fe3O4@porous carbon microspheres based on in-situ reaction: Enhanced photo-Fenton wastewater treatment

Low photo-induced carrier recombination rate, exceptional light absorption, and advantageous recycling performance are crucial attributes of semiconductor photocatalyst for wastewater purification. Herein, based on in-situ reaction, close-contact S-scheme bismuth chromate/bismuth oxide/ferroferric oxide@porous carbon microspheres (Cr2Bi3O11-Bi2O3/Fe3O4@PCs) (F-CBFP) was fabricated using alginates as precursor. Due to the abundance of functional groups on the porous carbon (PCs), Bi2O3 and Cr2Bi3O11 nanoparticles (NPs) are in situ deposited onto the highly conductive 3D magnetic porous Fe3O4@PCs microsphere surface, which not only form tight interfacial contacts and reduces interfacial potential barriers but also prevent agglomeration or shedding of the NPs during photocatalytic reactions. Moreover, density functional theory (DFT) calculations further confirm that the formation of a robust built-in electric field (BIEF) within F-CBFP prompts photo-induced electrons in the conduction band (CB) of Bi2O3 to combine with holes in the valence band (VB) of Cr2Bi3O11, effectively constructing a S-scheme heterojunction system. Also, Fe3O4 can act as a Fenton catalyst, activating the H2O2 generated by Cr2Bi3O11 under illumination. In wastewater treatment, the obtained F-CBFP shows remarkable photo-Fenton degradation (towards methyl orange (97.8 %, 60 min) and tetracycline hydrochloride (95.3 %, 100 min)) and disinfection performance (100 % E. coli inactivation), and exceptional cyclic stability.

Enhanced Thermoelectric Performance of PbTe Nanocomposites with Ag Nanoinclusions

Nanocomposites have already been widely used to enhance thermoelectric performance since they exhibit exceptionally low lattice thermal conductivities. Further improvement is expected to arise from boosting the power factor and charge carrier relevant figure of merit ZT with nanoinclusions. Here we present that Ag nanoscale inclusions embedding in the n-PbTe can meet this requirement. The quantitative relationships between such nanostructures in PbTe and thermoelectric properties, using a versatile model including the details of geometry, electron–phonon interactions, quantization, and tunneling, showed that the Seebeck coefficient can be significantly enhanced due to interface potential barrier induced by Ag nanoinclusions. Additionally, it was found that high-concentration Ag nanoinclusions with 1–2 nm radius can effectively enhance the thermoelectric performance of PbTe through energy-selective carrier scattering, especially around room temperature. The power factor and charge carrier relevant figure of merit ZT can be elevated by at least 80% and 260%, respectively. These findings highlight effective strategies to nanostructuring for overcoming the high threshold to commercial application for cooling and power generation.

A first-principles study of the formation and regulation of the electric double layers at Cu (0 0 1)/mineral oil interfaces

Copper-mineral oil interfaces are key components of oil-impregnated power transformers and are commonly believed to be one of their weak points. The formation of an electric double layer (EDL) at this interface as a result of charge accumulation and transfer is crucial to its insulating properties, but a molecular-level understanding of this phenomenon remains unclear. To understand this fundamental aspect, we have investigated the effect of different EDLs on the electric potential and interfacial potential barrier between copper and mineral oil by using first principle calculations. Based on the calculations, the EDL is shown to reduce the interfacial potential barrier and enhance the diffusion of oil molecules at the interface when the copper side is negatively charged and the mineral oil side is positively charged. In contrast, when the copper side is positively charged and the mineral oil side is negatively charged, the corresponding EDL can increase the interfacial potential barrier and reduce the diffusion of oil molecules at this interface. Our findings shed light on the relationship between the structure of EDLs and their electrical properties in oil-impregnated power transformers.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate.

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

Experimental Study of the Interfacial Slip on Hydrodynamic Lubrication Under Different Wettabilities

ABSTRACTThis article presents an experimental study about boundary slippage on the film thickness of hydrodynamic lubrication (HL) using a custom‐made slider‐on‐disc bearing testing apparatus. The interfaces with different affinity were obtained by surface energy modification of sliders with various oleophobic coatings, which are characterised by their contact angle (CA) and contact angle hysteresis (CAH). To study the mechanism of interfacial slip on HL under different wettability constraints, the film thickness and velocity profiles under shear were measured using interference and fluorescence photobleached method, respectively. The results showed that the CAH could better characterise the influence of interface effect on the film thickness of HL, which was explained by the correlation between CAH and the interface potential barrier. Furthermore, it was found that the slip velocity increased with lubricant viscosity and shear rate, which can be explained by the spatial heterogeneity of the flow in conformal contact and the critical shear stress slip model.

Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing.

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm of artificial synapses. On one hand, the resistance change of ferroelectric memristors mainly depends on the polarization reversal. On the other hand, the defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with the polarization reversal, thereby change the interface potential barrier. Thus, it is both desirable and necessary to investigate the synergistic effect of ferroelectricity and defects. Here, we prepare BaTiO3 ferroelectric memristor by pulse laser deposition and achieve resistance switching through the synergistic effect of ferroelectricity and oxygen vacancies. The memristor shows excellent switching characteristics with a large switching ratio (104) and good stability (103 s). It effectively emulates the features of artificial synapses and accomplishes decimal logical neural computing. In the neuromorphic system crafted with the memristor, the recognition accuracy of the 28 × 28 pixel image reaches 94.9%. These findings strongly support the research of ferroelectric memristors in neuromorphic devices.

Enhanced Thermoelectric Performance of PbTe Nanocomposites with Sb Nanoinclusions.

In the present work, the thermoelectric properties of PbTe embedded with spherical Sb nanoscale inclusions were calculated in detail, following the idea that energy-selective carrier scattering can effectively increase the Seebeck coefficient. The quantitative relationships between such nanostructures in PbTe and thermoelectric properties indicated that interface potential barrier induced by Sb nanoinclusions results in a significant enhancement of the Seebeck coefficient, especially when around room temperature. Furthermore, the optimal parameters for boosting the thermoelectric performance of PbTe were found to be 4 nm-radius Sb nanoinclusions with high concentration.

Ion‐Dipole Interaction for Self‐Assembled Monolayers: A New Strategy for Buried Interface in Inverted Perovskite Solar Cells

AbstractNickel oxide (NiOX) has a crucial role in enhancing the efficiency and stability of p‐i‐n inverted perovskite solar cells (PSCs), which hold great potential for commercialization. However, improving contact passivation between perovskites and NiOX is a challenge due to a hindered buried interface. In order to address this issue, self‐assembled monolayers (SAMs) are introduced as a buffer layer to prevent direct contact and non‐radiative recombination. While, the large dipole moment of SAMs increases the work function of NiOX, which is crucial for enhancing hole transport performance, given the low interfacial potential barrier for hole transfer. By a combination of the first‐principles calculations, drive‐level capacitance profiling, and transient absorption spectrum characterization, the understanding of the ion‐dipole interactions and interface passivation mechanism of potassium fluoride (KF) ultra‐thin buffer layer between SAMs and perovskites is provided. The efficiency of inverted PSCs as high as 23.25% is obtained, and the unencapsulated devices kept 90% of initial efficiency following 1400 h aging under nitrogen, which demonstrate remarkable long‐term stability as well. This novel strategy highlights the significance of SAMs dipole moment at the NiOX/perovskites interface and provides a new approach to address buried interfaces for high‐efficiency and long‐term stability in inverted PSCs.

Self-powered SnSx/TiO2 photodetectors (PDs) with dual-band binary response and the applications in imaging and light-encrypted logic gates

In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.

A high performance piezoelectric hetero-junction based on the configuration reform on interfacial potential barrier

In this paper, the barrier region of a mixed hetero-junction consisting of a p-type Si and an n-type ZnO was fully opened by abandoning the depletion layer approximation in advance. The barrier configuration was reconstructed by the artificial potential barrier based on a new fully coupled model in which the interaction between physical fields and charge carriers was taken into account. Then, we put forward an interesting design idea of elevating the mechanical regulation performance of a PN junction by manufacturing it with a third-generation piezoelectric semiconductor and a narrow bandgap semiconductor. It is through the deformation of the third-generation piezoelectric semiconductor on one side under mechanical loadings to excite polarization charges at the PN interface such that the movement of charge carriers in the narrow bandgap semiconductor on the other side is able to be tuned by the interface polarization charges. Besides, it is found a specific current-stress characteristic for such a mixed hetero-junction, which will present three stages, i.e., rising stage, platform stage and falling stage. The rising stage is caused by the improving recombination rate, which can be used as a high sensitivity stress sensor (output current improved by more than 10 times in a small stress). Oppositely, the falling stage is caused by the weakened recombination rate due to carrier type-inversion, which can be used to determine overload (output current reduced dramatically when the stress increased to a specific value). Finally, the platform stage is caused by the competition of the above two cases. At this stage, the device operates very stable and can resist the external perturbation. Obviously, the study possesses referential significance to the design and mechanical tuning on performance of piezotronic devices.

Phase Conductance of BiFeO3 Film.

In this work, the local conductance of the tetragonal-like (T-like) and rhombohedral-like (R-like) phases of epitaxial BiFeO3 film is systematically studied via conductive atomic force microscopy. At higher tip voltage, there is a mutual transition between the T-like and R-like phases, which could be attributed to the strain relaxation in the T-like phase induced by electric poling, as well as local polarization switching. The T-like phase exhibits a higher conductance, which is related to the lower interface potential barrier between the tip and film surface. Reversible low- and high-current states in the T-like phase can be tuned by polarization switching. These results will be helpful for designing novel nanoelectronic devices, such as voltage and strain sensors.

Oxygen vacancy self-doped single crystal-like TiO 2 nanotube arrays for efficient light-driven methane non-oxidative coupling

Photocatalytic non-oxidative coupling of methane (PNOCM) is a mild and cost-effective method for the production of multicarbon compounds. However, the separation of photogenerated charges and activation of methane are the main challenges for this reaction. Here, single crystal-like TiO₂ nanotubes (V_O-p-TNT) with oxygen vacancies (V_O) and preferential orientation were prepared and applied to PNOCM. The results demonstrate that the significantly enhanced photocatalytic performance is mainly related to the strong synergistic effect between preferential orientation and V_O. The preferential orientation of V_O-p-TNT along [001] direction reduces the formation of complex centers at grain boundaries as the form of interfacial states and potential barriers, which improves the separation and transport of photogenerated carriers. Meanwhile, V_O provides abundant coordination unsaturated sites for methane chemisorption and also acts as electron traps to hinder the recombination of electrons and holes, establishing an effective electron transfer channel between adsorbed CH₄ molecule and photocatalyst, thus weakening C–H bond. In addition, the introduction of V_O broadens the light absorption range. As a result, V_O-p-TNT exhibits excellent PNOCM performance and provides new insights into catalyst design for CH₄ conversion.

Interface-mediated ferroelectricity in PMN-PT/PZT flexible bilayer via pulsed laser deposition

Ferroelectric thin-film bilayers of Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)/PbZr0.52Ti0.48O3 (PZT) were grown on a flexible substrate of mica using pulsed laser deposition. Growth of the bilayer was induced with a thin film of LaNiO3 (LNO) single crystal, which was deposited on a mica substrate through van der Waals epitaxy. The LNO thin film also serves as the electrode for the bilayer device. The growth of the LNO thin film along the ⟨ 100 ⟩ orientation adopts a “Stranski–Krastanov” mechanism, governed by the relaxation of elastic energy between LNO/mica. Compared with the single layers of PMN-PT or PZT, or the bilayer of PZT/PMN-PT, the PMN-PT/PZT bilayer exhibits enhanced ferroelectric properties, with remnant polarization up to 72 μC/cm2. In addition, polarization in the PMN-PT/PZT bilayer exhibits excellent resistance against mechanical bending fatigue over 108 switching cycles. Such improved performances are ascribed to spontaneous polarizations enhanced by the residual stress at the PMN-PT/PZT heterointerface, increased interfacial potential barrier against leakage, and suppressed diffusion of Nb or Mg across the interface.

Investigation of Contact Electrification between 2D MXenes and MoS2 through Density Functional Theory and Triboelectric Probes

AbstractContact electrification (triboelectrification) (CE) is a universal phenomenon in ambient environment and has been recorded for more than 2600 years. Nonetheless, the intrinsic mechanism of CE still remains controversial. Herein, based on first‐principles theory, the underlying mechanism in CE is systematically investigated between metallic MXenes and semiconductive MoS2. The results show that the work functions of contacting materials dominate the direction of electron transfer during CE process. That is, the electron will be transferred from the material with low work function to the one with high work function. The theoretical prediction is verified experimentally through investigating triboelectric probes based on MXenes and MoS2 nanomaterials. Additionally, it is noted that the interfacial potential barrier and the work function difference together modulate the amount of transferred electron. Electron transfer mainly occurs in the repulsive forces region where the interaction distance between the two materials is shorter than the normal bonding length. The quantum calculation results agree well with the Wang transition theory. Furthermore, it is also noticed that, due to the wave‐particle duality of electron, electron transfer will obviously occur at the attractive force region when the two contacting materials exhibit a larger work function difference.