A method based on infrared reflectance spectroscopy is presented by which the Mg content in ZnO/(Zn,Mg)O multiple quantum wells with very thin barriers can be determined. The method relies on the observation of interface phonon-polaritons which appear as sharp dips in the p-polarized reflectance spectra at oblique incidence near the longitudinal optical (LO)-phonon frequencies of both QW and barrier materials. By fitting the reflectance spectra to a dielectric function model, the LO phonon frequency of the (Zn,Mg)O barrier layers can be determined. The LO phonon frequency depends on the Mg content. Comparing to Mg content calibration via cathodoluminescence, a linear relationship between the reflectance dip frequency and the Mg content is obtained. The presented method serves as a rapid means to determine the Mg content on final structures with very thin (Zn,Mg)O layers -such as device structures- where alternative, destructive methods cannot be used.