Interaction Of Boron Research Articles

Boron interaction with double-walled carbon nanotubes across temperature ranges

Boron-adsorbing carbon nanotubes receive considerable attention in materials science due to their unique properties and potential applications. In particular, boron-adsorbing double-walled carbon nanotubes (DWNTs) exhibit a wide range of tunable electronic and optoelectronic properties. This study explores the influence of boron atoms on metallic (5,5@10,10) and semiconducting (8,0@17,0) DWNTs. We examine alterations in partial charge depending on the quantity of boron atoms adsorbed and affixed to the DWNT surface across temperatures from 300 K to 900 K. The results show that in both DWNTs, with the increase of energy corresponding to the temperature, the adsorption index of boron atoms (adsorbed to the first layer of DWNT) and the positive partial charge increase. Specifically, the maximum partial charge of DWNT(8,0)@(17,0) and DWNT(5,5)@(10,10) is 1.94e and 1.30e (at 300 K), 4.87e and 3.66e (at 600 K), 6.97e and 6.16e (at 900 K). Increasing boron concentration leads to heightened positive partial charge of DWNTs. This, in turn, affects the conductivity of the nanotube.

Comprehensive risk assessment and interactions of fluoride and boron ions in the water-sediments interface: The Red Sea, Egypt

This study presents a baseline evaluation of the distribution, human and ecotoxicological risk, and the potential interactions of fluoride and boron in the water-sediment interface in 25 locations from incredible Red Sea tourist destinations. Results showed comparable levels of B and F in the water and sediments with previous literature. Significant positive correlation was found between B and F (r = 0.57; P<0.01). Based on the sediment/liquid partition coefficient (Kd), F is more likely to be released from the sediment into seawater (logKd< 3) than B (3<logKd< 4). pH and alkalinity may affect water-sediment interactions of B and F, respectively, while SO42− and Cl− ions had no significant effect on adsorption ability of F and B. The majority of minerals had average saturation Index (SI) > 1 referring to the over saturation of seawater with these minerals and their inability to dissolve. The formation of CF, FAP, and CFAP may be related to the high correlation between Fw (r = 0.928, P< 0.01; r = 0.527, P< 0.01; r = 0.608, P< 0.01) and Bw (r = 0.38, P< 0.05; r = 0.38, P< 0.05; r = 0.397, P< 0.05). Total hazard quotient (THQ) for children and adults were <1, revealing no health risks from exposure to B and F through ingestion and skin contact while swimming. The risk characterization ratio; RCRmix(MEC/PNEC) showed high short-term risks to aquatic organisms. Further investigations might emphasis on emerging mitigation strategies to address these concerns.

Enhancement of developmental defects in the boron‐deficient maize mutanttassel‐less1by reduced auxin levels

AbstractBackgroundPlant responses to deficiencies of the micronutrient boron are diverse and go beyond the well‐characterized function of boron in cell wall crosslinking. To explain these phenotypic discrepancies, hypotheses about interactions of boron with various phytohormones have been proposed, particularly auxin. While these hypotheses are intensely tested in the root meristem of the model species,Arabidopsis thaliana, studies in crop species and the shoot are limited.AimsTo address potential boron–auxin interactions during the vegetative and reproductive development of the crop maize (Zea mays), we utilized the boron‐deficienttassel‐less1(tls1) mutant and the auxin‐deficientvanishing tassel2(vt2) mutant. We investigated interactions of boron and auxin on the levels of auxin biosynthesis and auxin transport in leaves and shoot meristems.Methods and ResultsBy using genetic interaction analysis, hormone quantification, and confocal microscopy, we show that boron‐deficient leaf phenotypes intls1are enhanced in double mutants withvt2in both greenhouse and field conditions. However, auxin levels are not altered in developing leaves intls1. Rather, the localization ofZmPIN1a:YFP, a marker for auxin transport, is altered in young tassel meristems and is absent from organ initiation sites during vegetative development.ConclusionsOur data suggest a link between polar auxin transport and phenotypic consequences in boron‐deficient conditions and further show that boron deficiency‐induced developmental defects are sensitive to low auxin levels. Our study, therefore, offers new insight into nutrient–hormone interactions to regulate crop development.

Influence of boron and molybdenum on yield attributes of mustard

Boron and Molybdenum play a remarkable role in crop production and they are especially important for oil seed crops. Mustard is a very important oil seed crop in Bangladesh. The optimum and adequate levels of boron and molybdenum are very important for attaining a higher quality yield of oil seed crops. This study was carried out to investigate the influence of boron, molybdenum, and their interactions on yield and yield attributes of mustard var. Binasarisha-5 at the experimental field of Bangladesh Institute of Nuclear Agriculture, Mymensingh. Three levels of boron (0,1 and 2 kg/ha) and two levels of molybdenum (0 and 20 ppm) were used as treatment variables. Molybdenum was sprayed at the maximum vegetative growth stage. The experiment was laid out in a randomized complete block design with four replications. Results showed that the mean effects of boron and molybdenum significantly influenced the growth and yield of mustard. Application of 2 kg B/ha gave a significant influence on most of the yield contributing characters which resulted in the highest seed yield/ha (1294 kg/ha). Interactions of boron and molybdenum significantly influenced the seeds/siliqua, seed yield/plant, shoot weight/plant, shell weight/plant, seed yield /ha, straw yield/ha, and biological yield /ha. Seed yield (1337 kg/ha) was the highest with the interaction of 2 kg/ha application of boron and foliar spary of 20 ppm molybdenum. So, it is concluded that B and Mo application may increase the seed yield of mustard. Bangladesh J. Agri. 2023, 48(1): 101-111

Insight into B S ratio model and surface atom interactions of co-doping diamond: First-principles studies

The complex co-doping structure of boron and sulfur is investigated using the density functional theory approach. Different ratio models show significant differences in electronic properties. More importantly, the interactions of boron, sulfur, and carbon atoms are studied on intrinsic/B-doped (001), (111), and (110) diamond surfaces. The most stable adsorption site, adsorption structure, and charge transfer are discussed. B atom induces a larger adsorption energy (intrinsic: −4.57 eV, −4.56 eV, and −4.00 eV; B-doped: −4.70 eV, −4.72 eV, and −4.86 eV). And a larger charge transfer between diamond and S radicals is also found. Therefore, the phenomenon that the sulfur contents in diamond increases after the introduction of boron in the experiment can be explained. Considering different crystal surfaces, larger adsorption strength is obtained from (111) and (110) surface. And different levels of strain are introduced into three different surfaces. The migration barrier of S atom is also considered. The lowest migration barrier is 0.06 eV on (111) surface, whereas the highest value is found on (001) surface (1.96 eV). B atom also benefits for the HxS radical adsorption. It can be concluded that B doping can help with S and HxS adsorption. This study can provide an explanation for the increased solubility of S on B-doped diamond.

Improving the ignition and combustion of JP10/boron-based nanofluid fuel droplets by the interaction of PTFE and boron

Improving the ignition and combustion of JP10/boron-based nanofluid fuel droplets by the interaction of PTFE and boron

Influence of Micronutrients (Boron and Zinc) on Uptake and Availability of Nutrients

An experiment was carried out SKUAST –K in two consecutive years (2016 and 2017) to study the effect of zinc and boron and their interaction on nutrient uptake in onion on nutrient uptake and soil properties of onion. In the experiment it was observed that sole zinc and boron levels, Z3 (7.500 kg Zn ha-1) and B3 (1.500 kg B ha-1) application proved superior in enhancing the uptake of all nutrients but exhibited lowest value in case of phosphorus uptake. It was further observed that interaction of zinc and boron proved superior to their sole applications in increasing uptake of nutrients. Treatment combination Z3B3 (7.500 kg Zn + 1.500 kg B ha-1) recorded significantly maximum value for uptake of nitrogen (113.93 kg ha-1), potassium (67.17 kg ha-1), boron (125.58 g ha-1) and zinc (184.01 g ha-1) but exhibited lowest value in case of phosphorus uptake. Sole application of zinc and boron and their combination exhibited a non-significant influence on soil pH, electric conductivity, organic carbon (%) and organic matter (%). Application of zinc (7.500 kg ha-1) and boron (1.500 kg ha-1) improved the availability of all nutrients except of phosphorus availability. Interactions of zinc and boron, proved synergistic in augmenting available nutrients except for phosphorus availability.

New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon

Silicon doped with boron is the most widely used material in modern microelectronic devices based on p-Si. Therefore, it is important to thoroughly understand boron’s role in the processes of defect-impurity interaction in Si both on growing the material and during operation of devices. In this work, interactions of boron with oxygen in Si are investigated by studying boron absorption intracenter transitions, which are known to be highly sensitive to the local environment. In boron-doped Si, two lines with maxima at 228 and 261.3 cm−1 were detected. The linear dependence of lines intensity on boron concentration and the quadratic on oxygen content testifies that the defect responsible for the lines can be identified as BsO2i. The observed absorption lines correspond to the transitions from the ground to the excited states of boron, which are shifted toward lower frequencies relative to the main transitions due to a deformation perturbation from neighboring oxygen atoms. The activation energy of annealing and ionization energy of defect are determined. The properties of the registered ВsO2i defect differ from the known ВsO2 associated with the light-induced degradation of solar cells by local configuration. The data obtained testify that the ВsO2i defects with different properties can be formed in Si and must be taken into account when developing Si:B-based devices because they can play an important role in charge carrier transfer and affect the electrical and optical parameters of the material.

Investigation of Boron Nitro Silicone Band Modulation Using the Tight-Binding Method

Boron Nitro silicon (Si2BN), as a 2D material, is used in a wide variety of applications due to its outstanding electrical properties. The electrical parameters of Si2BN need to be defined and engineered precisely to improve the device performance. This paper investigates the band structure and effective parameters of Si2BN using the tight binding approach. The unit cell including 4 atoms is considered for monolayer structure and the Schrodinger equation is calculated to obtain the energy levels. The effect of hopping energy on Si2BN band structure is also studied considering the conduction and valence bands. It is demonstrated that the distance between conduction and valance bands can be modified using the effect of lattice constant variation. The obtained results show that the nature of matter changes with fluctuating hopping energy of Si2BN. Alteration of the material properties can be explained in the form of applied perpendicular electric field to the Si2BN surface or strain and stress effects. The overlap energy variation in the form of band gap modulation is also explored and it is concluded that the band gap is decreased by strengthening of Silicon–Boron interaction. This research emphasized that obtained results are now suitable for being employed in different applications of nanoelectronics.

BORON-ENHANCED BIOLOGICAL EFFECTIVENESS OF PROTON IRRADIATION: STRATEGY TO ASSESS THE UNDERPINNING MECHANISM.

Proton radiotherapy for the treatment of cancer offers an excellent dose distribution. Cellular experiments have shown that in terms of biological effects, the sharp dose distribution is further amplified, by as much as 75%, in the presence of boron. It is a matter of debate whether the underlying physical processes involve the nuclear reaction of 11B with protons or 10B with secondary neutrons, both producing densely ionizing short-ranged particles. Likewise, potential roles of intercellular communication or boron acting as a radiosensitizer are not clear. We present an ongoing research project based on a multiscale approach to elucidate the mechanism by which boron enhances the effectiveness of proton irradiation in the Bragg peak. It combines experimental with simulation tools to study the physics of proton-boron interactions, and to analyze intra- and inter-cellular boron biology upon proton irradiation.

Interaction of Carbon, Titanium, and Boron in Micro-Alloy Steels and Its Effect on Hot Ductility

Varying contents of carbon, titanium and boron were used in the base steel composition of 0.30 wt% Si, 2.0 wt% Mn, 0.006 wt% S, 0.03 wt% Nb, and 30–35 ppm N. Hot ductility tests were performed with Gleeble-3800, after the steel sample was in-situ melted, solidified, and cooled to the test temperature. Investigation was completed with thermodynamic and kinetic simulations. The best results were obtained for steels containing 58–100 ppm B and 35 ppm Ti. They showed very good hot ductility of 80–50% RA within the temperature range between 1250 °C and 800 °C. It was shown that titanium and boron were effective in improving the hot ductility. Titanium protected boron from binding into BN and was low enough to prevent excessive (Ti,Nb) carbonitride precipitation, which both could decrease hot ductility. Boron that precipitated along austenite grain boundaries as iron boride Fe2B was very beneficial for the hot ductility of steel.

Determine the Effect of Lime and Boron Interaction on Nutrient Availability and Acidity Parameters in Soil

Field experiment was conducted to examine the determine the effect of lime and boron interaction on nutrient availability and acidity parameters in soil. The experiment was carried out in Randomized Block Design (RBD) in field with four levels of lime (L0 – No lime, L0.3 – Furrow application @ 300 kg ha-1, L2.0 – Broadcasting @ 2 t ha-1, L5.0 – Broadcasting @ 5 t ha-1) and four levels of boron (B0 – No Boron, B0.5 – Broadcasting @ 0.5 kg ha-1, B1.0– Broadcasting @ 1 kg ha-1, B1.5 – Broadcasting @ 1.5 kg ha-1), respectively. B fertilization is therefore important to improve soil B availability and crop growth in the region. Availability of applied B in soil may be affected due to its possible interaction with lime which is usually recommended as an ameliorative measure in acidic soils. In this view, a field experiment was undertaken to evaluate the effect of lime and B application on growth, yield and quality of soybean, as well as their effect on nutrient availability and acidity parameters in soil. The crop was grown with four doses of lime (0, 0.3, 2.0 and 5.0 t ha-1) and as many doses of B application (0, 0.5, 1.0, and 1.5 kg ha-1). The experiment was taken in RBD design with factorial arrangements of the treatments. Seed yield of soybean increased with increasing doses of lime and Boron application with the highest yield being observed at 5tha-1 lime and 1 kg ha-1 B application; lime and B interaction was not significant Application of B @ 1 kg ha-1 increased seed yield by 18.6%, while lime application @ 5 t ha-1. Increased yield by 36%.The positive effect of lime and B application on soybean yield was mediated through improved growth and pod formation in the crop.

Wear resistance of composite electrolytic coatings

The article analyzes the influence of composite electrolytic coatings (CEC) on the wear resistance of structural steels. The issues of matrix selection and various combinations in composite coatings of different chemical elements and compounds are considered. Coatings based on chromium, nickel, iron, copper, cobalt and others are widely used in industry, but nickel-based composite coatings are the most widely used. Nickel is widely used as a matrix for CEC, because it has an affinity for most particles used as the second phase and easily forms a coating with them. These coatings are used for corrosion protection, increase of physical and mechanical and chemical parameters, increase of hardness and wear resistance, restoration of the sizes, giving to a surface of self-lubricating properties.&#x0D; Nickel-based coatings with SiC filler of various fractions from size 100/80 μm to nanoparticles smaller than 50 nm were investigated on the basis of the established installation for CEC application. Thus, SiC powders with the following sizes were used in the works: less than 50 nm - nanoparticles; M5; 28/20; 50/40; 100/80 μm.&#x0D; In the studies performed, 0.01… 0.02 g/l sodium lauryl sulfate was additionally introduced into the electrolyte, which promotes the incorporation of SiC particles into the coating and improves the conditions for building the Nickel matrix.&#x0D; Amorphous boron powders of about 1 μm size were also added to the silicon carbides as a filler, which is explained by the possibility of boron and nickel interaction during the subsequent heat treatment of the coating and obtaining new structures (solid solutions, eutectic, dispersion-hard alloys).&#x0D; It is of practical interest to study the possibility of improving the physical and mechanical properties of nickel-based CEC by introducing metals capable of heat treatment, interact with the metal matrix to form solid substitution solutions and chemical compounds (solid phases of implementation) and determine tribotechnical characteristics of these coatings.&#x0D;

Promoting photocatalytic interaction of boron doped reduced graphene oxide supported BiFeO3 nanocomposite for visible-light-induced organic pollutant degradation

Tuning the morphology of the semiconductor heterojunction photocatalyst has attracted extensive attention for effective photocatalytic performance in the process of wastewater treatment. The combination of boron doped reduced graphene oxide (B-rGO) supported by Bismuth ferrite (BiFeO3) nanocomposite was fabricated via simple one-pot mild hydrothermal synthesis. Notably, the non-metal doping with reduced graphene oxide leads to an extra advantage in improving photophysical properties such as electrochemical impendence spectroscopy (EIS) and photocurrent measurements, which significantly increases the charge carrier recombination factor due to the density state value near to the Fermi energy level in the system. The intimate layer contact between the B-rGO and BiFeO3 nanocomposite is well established by X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), UV–vis diffuse reflectance spectroscopy (UV-DRS), and Vibrating sample magnetometer (VSM). Furthermore, scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) provide clear evidence for decorating hierarchically layered nanocomposite. The superior performance of the developed nanocomposite degradation efficiency was revealed towards Tetracycline (TC), and Rhodamine B (RhB) was chosen as an ideal model pollutant. The degradation efficiency was achieved for TC (86.7%) and RhB (99.4%). Also, the developed photocatalyst exhibited excellent photostability after four consecutive stability cycles. Finally, the non-metal doping technology was found to demonstrate excellent potential features in the field of environmental wastewater and pharmaceutical water detoxication.

Influence of Nitrogen and Boron on the magnetization of nanoporous graphene : A first-principle investigation

Spin-polarized density functional theory (DFT) calculations with the generalized gradient approximation (GGA) of the Perdew–Burke–Ernzerhof (PBE) flavour, i.e., GGA-PBE has been performed to study the interactions of nitrogen (N) and boron (B) dopants with model graphene nanopores. We study the formation energy, magnetic and electronic properties of nanoporous graphene containing varying concentration of N and B as dopants. Magnetism in nanoporous graphene is induced by σ and π dangling bonds due to missing carbon atoms following the creation of the nanopores. Here, we show that progressive substitution of carbon atoms carrying dangling bonds, with either B or N atoms, results to the progressive decrease in the magnetic moment of the doped nanopore defect structures. In the N doped nanopore, for every single N substituting the C atom carrying dangling bonds at the perimeter of the nanopore, the magnetic moment reduces by about 1 μB. The magnetization of the nanopore is completely annihilated after full substitution of the carbon atoms carrying dangling bonds. In the case of B doped nanopore however, the magnetic moment decreases rapidly and vanishes before all the C atoms carrying dangling bonds are substituted. Löwdin charge analysis shows that N doping leads to charge transfer from the C to the N atom while B doping leads to charge transfer from B to the neighbouring C atoms. Thus, the electron withdrawing characteristics of N atom contributes to reduce the magnetization. On the other hand, B atom donates its charges which contribute to saturate the C dangling bonds and thus reduces the magnetization. Our work shows the possibility of achieving finite magnetic moment in graphene via a combination of nanopore engineering, B or N doping. Such nanoscale control of magnetization in a low-dimensional structure such as graphene, has important consequence for spintronics and related applications.

Response of Sulphur and Boron interaction on fertility status of Inceptisols of Prayagraj, India

The Research was conducted at the Soil Science Research Farm, Sam Higginbottom University of Agriculture, Technology and Sciences, Prayagraj, U.P during the Kharif 2020-2021 in which maize is sown. The experiment was laid out in Factorial-Randomized Block Design with Sixteen treatments and three replications includes four levels of Sulphur and Boron that leads to the non-significant findings i.e B.D, P.D, % pore space WHC and pH and remaining macro-micro nutrients such as OC, N, P, K, S and B were found significantly low to medium range, which comprises yellowish brown sandy loam textured neutral to alkaline soil that is nonsaline in nature among all the sixteen treatment combination applied the treatments T16 has shown the synergistically best results in improvising the soil nutritional status that leads to increased crop yield and increased morphological parameters as well.

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

It is well established that boron reacts with two oxygen atoms in Czochralski-grown silicon (Cz-Si) to form a defect, which is responsible for the dominant light-induced degradation (LID) in solar cells made from Cz-Si:B material. The detrimental effect of LID has stimulated a move by solar cell manufacturers to the use of silicon with other group-III dopants, particularly with gallium. Cz-Si:Ga is immune to the BO-type LID. The information available in the literature on the interactions of oxygen with either Al, Ga, or In impurities in Si is limited. We use ab initio modeling and junction spectroscopy techniques to study a family of defects with unusual electronic properties, which have been detected in Cz-Si samples doped with different shallow acceptor species. We have carried out detailed measurements of the temperature dependencies of hole emission rate, equilibrium occupancy, and hole capture kinetics for the traps observed in differently doped p-type Cz-Si samples. It is found from the analysis of the changes in magnitude of the deep-level-transient signals with temperature that the equilibrium occupancy function of the traps is characteristic for a defect with negative-U properties in all the samples. The positions of the E(−/+) occupancy level of the defects are very close in differently doped samples, E(−/+) = Ev + (0.31 ± 0.01) eV. It is argued that the oxygen dimer interacts with group-III atoms in silicon and these interactions result in the formation of AsO2 complexes (A is either B, Al, Ga, or In atom) with very similar electronic properties.

Metal-Free Phosphorus-Directed Borylation of C(sp2 )-H Bonds.

Spectacular progress has recently been achieved in transition metal-catalyzed C-H borylation of phosphines as well as directed electrophilic C-H borylation. As shown here, P-directed electrophilic borylation provides a new, straightforward, and efficient access to phosphine-boranes. It operates under metal-free conditions and leverages simple, readily available substrates. It is applicable to a broad range of backbones (naphthyl, biphenyl, N-phenylpyrrole, binaphthyl, benzyl, naphthylmethyl) and gives facile access to various substitution patterns at boron (by varying the boron electrophile or post-derivatizing the borane moiety). NMR monitoring supports the involvement of P-stabilized borenium cations as key intermediates. DFT calculations reveal the existence and stabilizing effect of π-arene/boron interactions in the (biphenyl)(i-Pr)2 P→BBr2 + species.

Metal‐Free Phosphorus‐Directed Borylation of C(sp2)−H Bonds

AbstractSpectacular progress has recently been achieved in transition metal‐catalyzed C−H borylation of phosphines as well as directed electrophilic C−H borylation. As shown here, P‐directed electrophilic borylation provides a new, straightforward, and efficient access to phosphine–boranes. It operates under metal‐free conditions and leverages simple, readily available substrates. It is applicable to a broad range of backbones (naphthyl, biphenyl, N‐phenylpyrrole, binaphthyl, benzyl, naphthylmethyl) and gives facile access to various substitution patterns at boron (by varying the boron electrophile or post‐derivatizing the borane moiety). NMR monitoring supports the involvement of P‐stabilized borenium cations as key intermediates. DFT calculations reveal the existence and stabilizing effect of π‐arene/boron interactions in the (biphenyl)(i‐Pr)2P→BBr2+ species.

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

The subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature‐induced degradation (LeTID) in boron‐doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n‐type Czochralski‐grown Si crystals co‐doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep‐level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat‐treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B‐doped p‐type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.