Intense Terahertz Laser Fields Research Articles

Floquet engineering of electronic states and optical absorption in laterally-coupled quantum rings under a magnetic field

Tuning electronic and optical properties of low-dimensional quantum systems in a flexible way is of particular importance in designing semiconductor-based devices. Semiconductor quantum rings (QRs) are nanoscopic structures that have become promising systems for physical and technological applications due to their unique electronic and optical properties. Here, we explore the fundamental electronic and optical properties of laterally-coupled QRs by taking into account the combined effects of applied magnetic and non-resonant terahertz intense laser fields. The laser-dressed electronic states are solved using the Floquet theory of periodically driven quantum systems in high-frequency limits within the framework of effective mass approximation. We demonstrate that increasing the laser field parameter leads to reduced tunnel splitting in the energy spectrum and more pronounced Aharonov-Bohm oscillations for the ground state energy, due to the attenuation of the tunnel coupling. Furthermore, depending on the position of the avoided crossings in Aharonov-Bohm oscillations of laterally-coupled quantum rings, the evolution of the avoided crossings with increasing the laser field parameter can be elucidated as the attenuated tunnel coupling or the competition between the attenuated tunnel coupling and the strengthening anisotropy of the laser-dressed QR potential well. The intensity of the intraband optical transition of laterally-coupled QRs can be effectively tuned and reaches a larger value by manipulating the laser parameter and magnetic field. Optical Aharonov-Bohm oscillations in laterally-coupled QRs are still exhibited by changing laser field parameters. Our findings offer a novel approach to manipulate the electronic and optical performances as well as the Aharonov-Bohm oscillations based on the laterally-coupled QRs by using an intense terahertz laser field.

Effects of external perturbations on light absorption by light/heavy hole excitons in a semi-parabolic quantum well

The effects of electric, magnetic, and intense terahertz laser fields on optoelectronic properties are investigated in a GaAs/AlxGa1-xAs semi-parabolic quantum well. The binding energy, exciton light absorption coefficients, interband transition energies, and dipole elements in the matrix are studied within the structure of the parabolic band and effective-mass approximations. The transition energy difference between the ground-state electron energy level and the ground-state heavy hole (light hole) energy level and matrix elements are carried out as functions of external perturbations with a constant well size. The results exhibit that the exciton binding energies of heavy and light holes reduce as long as the laser dressing parameter is larger. The optical absorption of light hole exciton in the system is stronger than the heavy hole exciton. And the excitonic energies, transition energies, and absorption coefficients are much more sensitive and controlled by changing the external perturbations.

Intense terahertz laser field induced electro-magneto-donor impurity associated photoionization cross-section in Gaussian quantum wires

Using expressions derived within the compact density matrix approach, the peaks of optical absorption and the changes of refractive index of a hydrogenic impurity in a GaAs/GaAlAs Gaussian quantum well wire are calculated taking into account the influence of static electric, magnetic and intense laser fields. The photoionization cross section, with normalized photon energy, is computed for different values of static electric field, magnetic field, and laser dressing parameter. The dipole moment matrix elements and the transition energy between ground and first excited state energy levels are computed as functions of quantum wire width and confinement potential depth, with and without external perturbations. Donor impurity binding energy is investigated in presence of the aforementioned electromagnetic probes, using parabolic band and effective mass approximations. The results show that the absorption coefficients depend on the transition energy difference between initial and final states involved as well as on the corresponding polarization response via dipole matrix elements. Discussed optical properties are field-sensitive and they can be tuned within the desired energy ranges using these external perturbations. • Peaks of optical absorption and changes of refractive index of a hydrogenic impurity in a GaAs/GaAlAs Gaussian quantum well wire are calculated. • They have been computed taking into account the influence of static electric, magnetic and intense laser fields. • Photoionization cross section, with normalized photon energy, is computed. • Donor impurity binding energy is investigated in the presence of aforementioned electromagnetic-probes, using parabolic band and effective mass approximations. • Discussed optical properties are field-sensitive and they can be tuned within the desired energy ranges using these external perturbations.

Terahertz laser field manipulation on the electronic and nonlinear optical properties of laterally-coupled quantum well wires.

An intense terahertz laser field is shown to actively manipulate the electronic states, as well as the linear and nonlinear optical absorption coefficients, of the laterally-coupled quantum well wires (LCQWWs). The laser-dressed quantum states of the LCQWWs are achieved using the non-perturbative Floquet method and the two-dimensional diagonalization technique under the effective mass approximation. We have demonstrated that the intense terahertz laser field induces a strong deformation of the confinement potential configuration of the LCQWWs, thus pronouncedly dressing the energy levels and wave functions. An unambiguous picture is depicted for the evolution of the laser-dressed quantum states with the increase of the laser-dressed parameter characterizing the strength of the laser-dressed effect. On this basis, the resonant peak positions of the linear and nonlinear optical absorption coefficients feature a blue shift followed by a red shift with an increase of the laser-dressed parameter. Furthermore, the evolution of the peak values for the linear and third-order nonlinear optical absorption coefficients as a function of the laser-dressed parameter is comprehensively discussed. Moreover, in contrast to the case without intense terahertz laser field, the peak values of the linear, third-order nonlinear, and total optical absorption coefficients can be obviously enhanced at the same frequency position by manipulating the appropriate laser-dressed parameter. A similar feature can be found in the linear, third-order nonlinear, and total refractive index changes. Our findings are conducive to the implementation of the expected quantum states and nonlinear optical effects in the LCQWWs, paving the way for new designs in tunable optical switches, infrared photo-detectors and infrared modulators.

Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential

Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential

Intense-terahertz-laser modulated photoionization cross section of shallow-donor impurity in semiconductors in a magnetic field

The effects of intense terahertz laser and magnetic fields on the photoionization cross section (PICS) of shallow-donor impurity in semiconductors are investigated within the Faraday configuration. The donor ground-state energy level and its wave function are calculated using a combination of nonperturbative and variational methods where radiation field is exactly included through a laser-dressed Coulomb potential (LdCP). We find that a competition between donor ground-state binding energy and optical integrals in tailoring the magnitudes and peak positions of PICS is achieved by external fields via the LdCP. In this way, the magnitudes and peak positions of PICS can be decreased or increased and effectively tuned with an appropriate choice of external fields. The overall shape of PICS is optically anisotropic, which is more pronounced in the z-polarization direction for large laser field intensity or low magnetic field. In the vicinity of ωc, the overall shape of PICS in the z-polarization direction changes into that of PICS in the x-polarization direction. Our theoretical findings hold promising applications in designing and developing new efficient impurity-based devices manipulated by external fields.

The effects of hydrostatic pressure and temperature on photoionization cross section of impurities in semiconductors under magnetic and intense terahertz laser fields

Abstract We have presented a theoretical study on shallow-donor-related photoionization cross section (PICS) in semiconductors subjected to hydrostatic pressure, magnetic field, and intense laser field within the Vogit configuration. Calculations are performed for the donor ground state using a combination of nonperturbative and variational methods in which intense laser field is exactly taken into account via a laser-dressed Coulomb potential (LdCP). We find that the overall shape of shallow-donor-related PICS depends upon the incident optical field polarization, which is more significant when the incident optical field polarization is parallel to the magnetic field. The donor ground-state binding energy and the optical integrals act in an opposite manner to tailor the magnitudes and peak positions of shallow-donor-related PICS by changing radiation field through the LdCP or by changing magnetic field, hydrostatic pressure, and temperature, leading to a blueshift or redshift of shallow-donor-related PICS spectrum and to a decrease or increase of shallow-donor-related PICS magnitude manipulated by these factors. Thus, we can control the properties of shallow-donor-related PICS with an appropriate choice of two external applied fields, hydrostatic pressure, and temperature to meet some special needs in designing and developing new efficient optoelectronic devices.

Magnetic field effect on the electronic states and the intraband optical absorption spectrum of a laser dressed double quantum dot molecule

The simultaneous effects of intense terahertz (THz) laser, a homogeneous magnetic fields, and the modification of the structural parameters on the electronic states, and the intraband optical absorption spectrum in a two-dimensional double quantum dot molecule are theoretically investigated. The crossing and anticrossing are observed in the energy dependence on the magnetic field induction between the third and the fourth energy levels. Additionally, it is shown that an intense THz laser field always shifts the energy spectrum to higher values. The variation of the structural parameters leads to the change of the positions of the energy levels and the anticrossing point. Finally, we have found that the intraband optical absorption spectrum, particularly the absorption intensity and the peak position, can be effectively regulated by an intense THz laser and a magnetic fields, as well as by the variation of the structural parameters of the double quantum dot molecule.

Nonlinear optical properties of triple δ-doped quantum wells: The impact of the applied external fields

In the present paper, we theoretically investigate the effect of applied external fields, such as electric, magnetic, and intense terahertz laser fields on the optical absorption and the relative refractive index change coefficients of triple δ-doped quantum well structures. To investigate the applied external field effects, we perform the calculation of the allowed subband energy levels and their corresponding eigen-functions using the diagonalization method within the framework of the effective-mass approximation. The effects of the applied external fields on the nonlinear optical properties of the quantum well structure are treated within the compact-density-matrix approach via the iterative method. The numerical results obtained are presented for two different values of electric, magnetic, and intense terahertz laser fields. These results show that changing the intensity of the external electric, magnetic, and intense terahertz laser field. It is concluded that the nonlinear optical response of the triple δ-doped structure can be significantly changed through the changes in the configuration of the external probes.

The Effects of Intense Terahertz Laser and Magnetic Fields on Optical Properties of a Shallow Impurity in Semiconductors in the Faraday Configuration

The influence of intense terahertz laser and magnetic fields on the total optical absorption coefficient for the transitions between shallow‐impurity states 1s and in semiconductors within the Faraday configuration is studied by using the compact density‐matrix approach, where the energy levels and wave functions of shallow‐impurity states are obtained by using a combination of time‐dependent nonperturbative approach and variational method. We find that the transition energy of shallow‐impurity states and the dipole matrix element can be not only increased but also decreased by varying the external fields via laser‐dressed Coulomb potential. In this way, the saturable absorption and the resonant peak position and magnitude of the total optical absorption coefficient can be effectively tuned with an appropriate choice of the external fields. Moreover, an appreciable effect of cyclotron motion on the total optical absorption coefficient is observed. This gives new degree of freedom in various device applications based on the intradonor transition of electrons.

Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration

The magnetopolaron effect on shallow-impurity states in semiconductors is investigated when subjected simultaneously to a magnetic field and an intense terahertz laser field within the Faraday configuration. We use a time-dependent nonperturbative theory to describe electron interactions. The externally applied fields are exactly included via a laser-dressed interaction potential. Through a variational approach we evaluate the binding energy of the shallow-impurity states. We find that the interaction strength of the laser-dressed Coulomb potential can not only be enhanced but also weakened by varying the two external fields. In this way, the binding energy can be tuned by the external fields and red- or blue-shifted with respect to the static binding energy. In the nonresonant polaron region, a magnetopolaron correction that includes the effects of photon process is observed. In the resonant polaron region, moreover, the resonant magnetopolaron effect accompanied by the emission and absorption of a single photon is distinctly observed. This can be modulated to be far away from the reststrahlen band. The intriguing findings of this paper can be observed experimentally and, in turn, provide a way to measure the strength of the electron-phonon interaction.

Controllable continuous evolution of electronic states in a single quantum ring

Intense terahertz laser field is shown to have a profound effect on the electronic and optical properties of quantum rings, where the isotropic and anisotropic quantum rings can now be treated on equal footing. We have demonstrated that in isotropic quantum rings the laser field creates irregular AB oscillations that are usually expected in anisotropic rings. Further, we have shown for the first time that intense laser fields can restore the {\it isotropic} physical properties in anisotropic quantum rings. In principle, all types of anisotropies (structural, effective masses, defects, etc.) can evolve as in isotropic rings, in our present approach. Most importantly, we have found a continuous evolution of the energy spectra and intraband optical characteristics of structurally anisotropic quantum rings to those of isotropic rings, in a controlled manner, with the help of a laser field.

Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor

The influences of intense terahertz laser and magnetic fields on shallow-donor states in GaAs bulk semiconductors in the Faraday geometry are studied theoretically in the framework of the effective-mass approximation. The interaction between the laser field and the semiconductor is treated nonperturbatively by solving analytically the time-dependent Schrödinger equation in which the two external fields are included exactly. In the nonresonant region, we have found that the binding and transition energies decrease with increasing laser-field intensity or decreasing laser-field frequency, and the binding energy increases with magnetic field. For relatively low radiation levels, the transition energy first slowly decreases with increasing magnetic field, but after a critical value, it rapidly increases with increasing magnetic field. However, it slowly decreases with magnetic field when the laser-field intensity is strong enough. Furthermore, in the vicinity of the resonant regime, the oscillatory behaviours of the binding and transition energies with laser-field frequency and magnetic field are observed. These results obtained indicate the possibility of manipulating the shallow impurity states in semiconductor by changing the intense laser-field frequency and intensity and the magnetic field, which gives a new degree of freedom in semiconductor device application.

High-harmonic generation in graphene: Interband response and the harmonic cutoff

We numerically examine the high-harmonic generation in graphene caused by an intense few-cycle terahertz laser field by solving the time-dependent Dirac equation. The observed spectra feature a complex interplay of interband and intraband electron dynamics. At high harmonic frequencies, we observe a plateau region with a cut-off frequency linearly proportional to the laser field. The linear dependence of the cutoff on the field resembles the behavior for electrons driven in bulk crystals but differs from the case of atoms or molecules. The unique features of the graphene band structure allow for a transparent decomposition of interband and intraband contributions and for an analytic estimate of the harmonic cut-off frequency in excellent agreement with the simulations.

Intense tera-hertz laser driven proton acceleration in plasmas

We investigate the acceleration of a proton beam driven by intense tera-hertz (THz) laser field from a near critical density hydrogen plasma. Two-dimension-in-space and three-dimension-in-velocity particle-in-cell simulation results show that a relatively long wavelength and an intense THz laser can be employed for proton acceleration to high energies from near critical density plasmas. We adopt here the electromagnetic field in a long wavelength (0.33 THz) regime in contrast to the optical and/or near infrared wavelength regime, which offers distinct advantages due to their long wavelength (λ=350 μm), such as the λ2 scaling of the electron ponderomotive energy. Simulation study delineates the evolution of THz laser field in a near critical plasma reflecting the enhancement in the electric field of laser, which can be of high relevance for staged or post ion acceleration.

Magnetic field effect on the laser-driven density of states for electrons in a cylindrical quantum wire: transition from one-dimensional to zero-dimensional behavior

The influence of a uniform magnetic field on the density of states (DoS) for carriers confined in a cylindrical semiconductor quantum wire irradiated by a monochromatic, linearly polarized, intense laser field is computed here non-perturbatively, following the Green's function scheme introduced by some of the authors in a recent work (Lima et al 2009 Solid State Commun.149 678). Besides the known changes in the DoS provoked by an intense terahertz laser field—namely, a significant reduction and the appearance of Franz–Keldysh-like oscillations—our model reveals that the inclusion of a longitudinal magnetic field induces additional blueshifts on the energy levels of the allowed states. Our results show that the increase of the blueshifts with the magnitude of the magnetic field depends only on the azimuthal quantum number m (m=0, 1, 2, …), being more pronounced for states with higher values of m, which leads to some energy crossovers. For all states, we have obtained, even in the absence of a magnetic field, a localization effect that leads to a transition in the DoS from the usual profile of quasi-1D systems to a peaked profile typical of quasi-0D systems, as e.g. those found for electrons confined in a quantum dot.

Kinetics of spin coherence of electrons inn-type InAs quantum wells under intense terahertz laser fields

Spin kinetics in $n$-type InAs quantum wells under intense terahertz laser fields is investigated by developing fully microscopic kinetic spin Bloch equations via the Floquet-Markov theory and the nonequilibrium Green's function approach, with all the relevant scattering, such as the electron-impurity, electron-phonon, and electron-electron Coulomb scattering explicitly included. We find that a finite steady-state terahertz spin polarization induced by the terahertz laser field, first predicted by Cheng and Wu [Appl. Phys. Lett. 86, 032107 (2005)] in the absence of dissipation, exists even in the presence of all the scattering. We further discuss the effects of the terahertz laser fields on the spin relaxation and the steady-state spin polarization. It is found that the terahertz laser fields can strongly affect the spin relaxation via hot-electron effect and the terahertz-field-induced effective magnetic field in the presence of spin-orbit coupling. The two effects compete with each other, giving rise to nonmonotonic dependence of the spin-relaxation time as well as the amplitude of the steady-state spin polarization on the terahertz field strength and frequency. The terahertz field dependences of these quantities are investigated for various impurity densities, lattice temperatures, and strengths of the spin-orbit coupling. Finally, the importance of the electron-electron Coulomb scattering on spin kinetics is also addressed.

Intense terahertz laser fields on a two-dimensional hole gas with Rashba spin–orbit coupling

We investigate the influence on the density of states and the density of spin polarization for a two-dimensional hole gas with Rashba spin–orbit coupling under intense terahertz laser fields. Via Floquet theorem, we solve the time-dependent Schrödinger equation and calculate these densities. It is shown that a terahertz magnetic moment can be induced for low hole concentration. Different from the electron case, the induced magnetic moment is quite anisotropic due to the anisotropic spin–orbit coupling. Both the amplitude and the direction of the magnetic moment depend on the direction of the terahertz field. We further point out that for high hole concentration, the magnetic moment becomes very small due to the interference caused by the momentum dependence of the spin–orbit coupling. This effect also appears in two-dimensional electron systems.

Intense terahertz laser fields on a quantum dot with Rashba spin-orbit coupling

We investigate the effects of the intense terahertz laser field and the spin-orbit coupling on single spin in a quantum dot. The laser field and the spin-orbit coupling can strongly affect the electron density of states and can excite a magnetic moment. The direction of the magnetic moment depends on the symmetries of the system, and its amplitude can be tuned by the strength and frequency of the laser field as well as the spin-orbit coupling.

Publisher's Note: Erratum: Spin-split two-dimensional electron gas perturbed by intense terahertz laser fields [Phys. Rev. B70, 193301 (2004); Phys. Rev. B72, 159902(E) (2005)

Received 17 October 2005DOI:https://doi.org/10.1103/PhysRevB.72.159903©2005 American Physical Society