Integration Of Photonic Devices Research Articles

Integrated Ultra‐Wideband Dynamic Microwave Frequency Identification System in Lithium Niobate on Insulator

AbstractThe capability to identify the frequency of unknown microwave signals with an ultra‐wide measurement bandwidth is highly desirable in radar astronomy, satellite communication, and 6G networks. Compared to electronic solutions, the integrated photonic technology‐enabled dynamic instantaneous frequency measurement (DIFM) approach is attractive as it offers unique advantages, such as ultra‐wide frequency measurement bandwidth, high flexibility, and immunity to electromagnetic interference. However, so far the bandwidth of the reported DIFM systems based on integrated photonic technology is limited to below 30 GHz due to the finite bandwidth of electro‐optical modulators (EOMs), limiting their applications, particularly in the field of millimeter wave technology (30–300 GHz). Here, the first integrated dynamic microwave instantaneous frequency measurement system with a record‐breaking operation bandwidth (ranging from 5 to 65 GHz) and low root‐mean‐square (RMS) error (≈300 MHz) is presented on the lithium niobate on insulator (LNOI) integrated photonic platform. This demonstration paves the way for high‐performance millimeter wave photonic integrated devices using the LNOI platform.

Integrating inverse design and partially etched platform: an ultra-compact polarization splitter and rotator as an example

Silicon photonics devices benefit greatly from a partially etched platform and inverse design. Herein, we propose a bi-layer polarization splitter and rotator with a topology pattern and demonstrate it on a silicon-on-insulator platform. Our device exhibits a significantly reduced physical footprint of only 2µm×6µm, compared to traditional directional couplers and tapered waveguides. The device accomplishes the functions of polarization conversion and separation in such a compact design without redundant tapered or bending waveguides. The tested minimum insertion loss with the fabrication batch reaches 0.57 and 0.67 dB for TE and TM modes, respectively. The TE mode demonstrates a wider bandwidth and lower ILs than the TM modes, averaging around 1 dB from 1530 to 1565 nm. The M modes exhibit approximately 2 dB ILs at the same wavelength range, decreasing to about 1 dB between 1565 and 1580 nm. Improved designs and fabrication conditions strongly suggest the potential for further performance enhancement in the device. This successful initiative validates the exceptional performance resulting from the integration of the partially etched platform and inverse design, providing valuable insights for future photonic integrated device designs.

Robust ultra-high-Q Fano resonance for topological corner and ring-cavity mode coupling in Kagome photonic systems

Corner and edge states in higher-order topological insulators provide new degrees of freedom for manipulating light propagation. Our research demonstrates that the topological waveguide coupled to the corner and edge states of the triangular cavity obtains a topological corner mode as narrow resonance and a topological ring-cavity mode as broad resonance, respectively. By adjusting the size of the dielectric column at the apex of the triangular cavity, the two modes can be coherently coupled at the same frequency position and obtain a high-Q Fano resonance. This Fano resonant has excellent robustness for unavoidable defects in the manufacturing process, paving the way for the design of high-performance lasers, switches, and other micro-nano integrated photonics devices.

Ultra-compact exciton polariton modulator based on van der Waals semiconductors

With the rapid emergence of artificial intelligence (AI) technology and the exponential growth in data generation, there is an increasing demand for high-performance and highly integratable optical modulators. In this work, we present an ultra-compact exciton-polariton Mach–Zehnder (MZ) modulator based on WS2 multilayers. The guided exciton-polariton modes arise in an ultrathin WS2 waveguide due to the strong excitonic resonance. By locally exciting excitons using a modulation laser in one arm of the MZ modulator, we induce changes in the effective refractive index of the polariton mode, resulting in modulation of transmitted intensity. Remarkably, we achieve a maximum modulation of −6.20 dB with an ultra-short modulation length of 2 μm. Our MZ modulator boasts an ultra-compact footprint area of ~30 μm² and a thin thickness of 18 nm. Our findings present new opportunities for the advancement of highly integrated and efficient photonic devices utilizing van der Waals materials.

Loading-effect-based three-dimensional microfabrication empowers on-chip Brillouin optomechanics.

The acousto-optic interaction known as stimulated Brillouin scattering (SBS) has emerged as a fundamental principle for realizing crucial components and functionalities in integrated photonics. However, the main challenge of integrating Brillouin devices is how to effectively confine both optical and acoustic waves. Apart from that, the manufacturing processes for these devices need to be compatible with standard fabrication platforms and streamlined to facilitate their large-scale integration. Here, we demonstrate a novel, to the best of our knowledge, suspended nanowire structure that can tightly confine photons and phonons. Furthermore, tailored for this structure, we introduce a loading-effect-based three-dimensional microfabrication technique, compatible with complementary metal-oxide-semiconductor (CMOS) technology. This innovative technique allows for the fabrication of the entire structure using a single-step lithography exposure, significantly streamlining the fabrication process. Leveraging this structure and fabrication scheme, we have achieved a Brillouin gain coefficient of 1100 W-1m-1 on the silicon-on-insulator platform within a compact footprint. It can support a Brillouin net gain over 4.1 dB with modest pump powers. We believe that this structure can significantly advance the development of SBS on chip, unlocking new opportunities for a large-scale integration of Brillouin-based photonic devices.

Controllable Fabrication of Organic Semiconductors for Aligned Microlasers and Integrated Photodetectors

AbstractEngineering of organic single crystal toward controllable and aligned patterns at microscale is crucial to the realization of highly integrated organic photonic devices and optoelectronics. However, precise positioning and controllable morphology of crystal structures is still challenging due to the strict conditions for crystal growth. In this paper, a solution based crystal regulation strategy with the assistance of template‐constrained growth method and femtosecond laser processing technology is developed to prepare aligned crystalline microribbon arrays. Simple solvent evaporation results in the random distribution and orientation of self‐assembled crystalline microribbons while it tends to form highly crystalline and orderly microribbon arrays assisted by the confined template microchannels. The large‐scale microribbon array can be fabricated as organic photodetectors with sensitive and fast response under 405 nm illumination. By virtue of the femtosecond laser processing technique, the microribbon arrays are precisely processed into a series of crystal subunits and each microribbon subunit can function as an individual microcavity resonator to produce stable, high‐quality organic laser. The facile solution based template‐constrained self‐assembly and femtosecond laser processing method provide novel strategies to generate highly oriented and controllable crystal structures for the potential applications in integrated organic lasers and optoelectronics.

Inorganic perovskite-based active multifunctional integrated photonic devices

The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.

Ambient Degradation Anisotropy and Mechanism of van der Waals Ferroelectric NbOI2.

The spontaneous centrosymmetry-breaking and robust room-temperature ferroelectricity in niobium oxide dihalides spurs a flurry of explorations into its promising second-order nonlinear optical properties, and promises potential applications in nonvolatile electro-optical and optoelectronic devices. However, the ambient stability of the niobium oxide dihalides remains questionable, which overshadows their future development. In this work, the chemical degradation of NbOI2 is comprehensively investigated using combined chemical and optical microscopies in conjunction with spectroscopies. We unveil the highly anisotropic degradation kinetics of NbOI2 driven by the hydrolysis process of the unstable dangling iodine bonds dominantly on the (010) facet and progressing along the c axis. Knowing its degradation mechanism, the NbOI2 flake can then be stabilized by the hexagonal boron nitride encapsulation, which isolates the air moisture. These findings provide direct insights into the ambient instability of NbOI2, and they deliver possible solutions to circumvent this issue, which are essential for its practical integration in photonic and electronic devices.

CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis.

In this work, we demonstrate photonic fabrication by integrating waveguide resonators and groove structures using cost-effective i-line stepper lithography on a 6-inch full wafer. Low-loss silicon nitride (SiN) waveguide can be realized with the quality (Q) factor of waveguide resonators up to 105. In addition, groove structures are also integrated by the full-wafer process, providing long-term stability of coupling and package solutions. The uniformity of different die locations is verified within the full wafer, showing the good quality of the fabricated photonic devices. This process integration of photonic devices provides the potential for mass-productive, high-yield, and high-uniformity manufacturing.

20 µm Micro‐LEDs Mass Transfer via Laser‐Induced In Situ Nanoparticles Resonance Enhancement

AbstractUltrafast laser is expected as a promising strategy for micro‐LEDs (µ‐LEDs) transfer due to its inherent property of suppressing thermal effects. However, its ultrahigh peak power and the unclear transfer mechanism make its transfer quality and efficiency unsatisfactory. Here, the study reports the high‐precision mass transfer of 20 µm fine‐pitch µ‐LEDs via in situ nanoparticles (NPs) resonance enhancement in burst mode ultraviolet picosecond laser irradiation. This technique suppresses the thermal melting effect and rapid cooling behavior of plasma by temporal modulation of the burst mode, generating NPs‐induced resonance enhancement that accurately and controllable drives a single unit up to tens of thousands of µ‐LEDs. The transfer of large µ‐LED arrays with more than 180 000 chips is also demonstrated, showing a transfer yield close to 99.9%, a transfer speed of 700 pcs s−1, and a transfer error of <±1.2 µm. The transferred µ‐LEDs perform excellent optoelectronic properties and enable reliable device operation regardless of complex strain environments, providing a reliable strategy for preparing broader classes of 3D integrated photonics devices.

On-Chip Meta-Optics for Engineering Arbitrary Trajectories with Longitudinal Polarization Variation.

On-chip integrated meta-optics promise to achieve high-performance and compact integrated photonic devices. To arbitrarily engineer the optical trajectory along the propagation path in an on-chip integrated scheme is of significance in fundamental physics and various emerging applications. Here, we experimentally demonstrate an on-chip metasurface integrated on a waveguide to enable predefined arbitrary optical trajectories in the visible regime. By transformation of the transverse phase to generate longitudinal mapping, the guided waves are extracted and molded into any different optical trajectories (parabola, hyperbola, and cosine). More intriguingly, predefined polarization states with longitudinal variation are also successfully imparted along the trajectory. Owing to the on-chip propagation scheme, the trajectories are uniquely free from zero-order diffraction interference, naturally having a higher signal-to-noise ratio beyond conventional free-space forms. Overall, such on-chip optical trajectory engineering allows for miniaturized integration and can find paths in potential applications of complex optical manipulation, advanced laser fabrication, and microscopic imaging.

Observation of a Photonic Orbital Gauge Field.

Gauge field is widely studied in natural and artificial materials. With an effective magnetic field for uncharged particles, many intriguing phenomena are observed in several systems like photonic Floquet topological insulator. However, previous researches about the gauge field mostly focus on limited dimensions such as the Dirac spinor in graphene materials. Here, an orbital gauge field based on photonic triangular lattices is first proposed and experimentally observed. Disclination defects with Frank angle Ω created on such lattices breaks the original lattice symmetry and generates purely geometric gauge field operating on orbital basis functions. Interestingly, it is found that bound states near zero energy with the orbital angular momentum (OAM) l = 2 are intensively confined at the disclination as gradually expanding Ω. Moreover, the introduction of a vector potential field breaks the time-reversal symmetry of the orbital gauge field, experimentally manifested by the chiral transmission of light on helical waveguides. The orbital gauge field further suggests fantastic applications of manipulating the vortex light in photonic integrateddevices.

1.3-µm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide.

Quantum well intermixing (QWI) is an effective method for simple and well-defined monolithic integration of photonic devices. We introduce an identical-active electro-absorption modulated laser (IA-EML) with optimized QWI, which is applied to reduce the absorptive waveguide region. To determine the optimal intermixed IA-EML structure, we conduct a comparative analysis between the cases of an IA-EML with only an intermixed waveguide region and with both intermixed waveguide and electro-absorption modulator (EAM) regions, as well as the case without QWI. The results reveal that the intermixed region effectively inhibits the absorption in the waveguide. In particular, the IA-EML with only waveguide intermixing exhibits superior modulation characteristics with low driving voltages and a high extinction ratio. Our work provides an attractive approach for suppressing the absorptive waveguide region in the IA-EML to enhance modulation performance and to develop photonic integrated circuits with a simplified process.

Fast Cycling Speed with Multimillion Cycling Endurance of Ultra‐Low Loss Phase Change Material (Sb2Se3) by Engineered Laser Pulse Irradiation

AbstractProgrammable and reconfigurable photonics is revolutionized the next generation of Si/SiN‐based photonics processors, optical signal processing, and neural and quantum networks. Ultra‐low loss phase‐change technology has the enormous potential to offer energy‐efficient, extra large‐scale integrated (ELSI) nonvolatile programmable photonics that can overcome the limitations of commonly used volatile and energy‐hungry programmable photonic systems. So far, most of the phase change materials (PCM) devices have already shown to be suitable for programmable and reconfigurable photonic circuit applications that do not require extreme endurance or ultra‐fast switching speeds. However, applications with ultra‐fast speed and multi‐million cycling requirements, such as memory cells, quantum computing, optical displays, and optical modulators necessitate enormous improvements in the existing cycling speed and endurance of PCMs, for high‐performance device configuration. Here, optical switching of an ultra‐low loss PCM (Sb2Se3) is demonstrated with an unprecedented combination of rapid cycling speed (0.6 × 105 cycles s−1) and extreme endurance (> 2 × 106 cycles) that pave the way for ultrafast, large‐scale, programmable, and reconfigurable integrated photonic circuits and devices.

Broadband multifunctional metasurfaces enabling polarization multiplexed focused vortex array generation

Metasurfaces are ultrathin artificially engineered structures exquisitely designed to tailor the wavefront, polarization, and amplitude of incident light, offering a versatile platform for implementing compact and integrated photonics devices. Metasurface-based structured light generation has gained considerable attention in the scientific community for its various exotic applications, including optical communication, particle manipulation, and high-resolution lithography. State-of-the-art design techniques include polarization multiplexing, multiple vortices beam generation, and vortex arrays. However, there needs to be more techniques for generating polarization switchable vortex arrays, despite the apparent advantages in significant application fields, necessitating a simple design technique. Here, we present a straightforward design technique utilizing computer-generated holography (CGH) and photonic spin Hall effect (PHSE) to realize a metadevice platform capable of generating broadband multiple optical vortex arrays with switchable polarization output. Our approach involves designing phase masks for the vortex arrays using CGH, which are then encoded onto the metasurface. By leveraging PSHE, the designed metasurfaces produce the desired optical response depending on the input polarization state. Using the proposed design technique as proof of concept, different all-dielectric metasurfaces capable of generating optical vortex arrays of different dimensions are demonstrated. The results verify the effectiveness of the proposed methodology. The design has potential applications in data communications, storage, quantum computation, nanoscale physical manipulation, and microscopy.

Higher‐Order States in a Non‐Hermitian 3D Topological Photonic Crystal

AbstractHigher‐order topological insulators hosting topological modes at hinges and corners provide a new avenue for disorder‐immune light transport, which prospects great potential in applications of integrated photonics devices. However, the active control of topological modes in 3D higher‐order topological insulators is not realized yet, and its construction is too complicated and huge to analyze. Here, a method is proposed to construct effective Hamiltonians for higher‐order topological insulators, which provides a correct physical picture of the states and the corresponding energies at the domain walls. A non‐Hermitian 3D honeycomb lattice is constructed, which can generate arbitrary‐located, arbitrary‐shaped, and robust topological hinge states propagating at gain‐loss domain walls. The 3D honeycomb lattice can also appear as non‐Hermitian third‐order TIs exhibiting corner states, which can be dynamically controlled and show new topologically protected confinement rules. This work expands the understanding of the topological properties in non‐Hermitian systems and enables the dynamic control of topological states of different dimensions.

Plug‐and‐Play Fiber‐Coupled Quantum Dot Single‐Photon Source via Photonic Wire Bonding

AbstractThe collection of single‐photon emission from a quantum dot (QD) in a Bragg waveguide through a photonic wire bond (PWB) via free‐space resonant frequency pumping at 1.6 K is demonstrated. The in‐fiber single photons show a small multiphoton contribution, quantified by a low second order photon autocorrelation value of (background‐corrected) or (raw data). The decay time of the QD is measured to be ps. The PWB obviates the need for in‐cryostat alignment of the single‐photon source with an optical fiber and thus offers a route to scalable integration of quantum photonic devices in a cryogenic environment. Uniquely, the approach combines the QD‐waveguide technique, enabling resonant driving of individual QDs without the need for cross‐polarization filtering, and the PWB for deterministic, alignment‐free coupling of single‐photon sources to optical fibers.

BLAST: A Wafer‐Scale Transfer Process for Heterogeneous Integration of Optics and Electronics

AbstractA general transfer method is presented for the heterogeneous integration of different photonic and electronic materials systems and devices into a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. BLAST's capabilities is demonstrated by integrating both GaAs and GaN µLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up‐convert photons from the red to the blue. The study also shows that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process.

High‐Efficiency Electro‐Optic Modulator on Thin‐Film Lithium Niobate with High‐Permittivity Cladding

AbstractThin‐film lithium niobate is a promising platform owing to its large electro‐optic (EO) coefficients and low propagation loss. However, the large footprints of devices limit their application in large‐scale integrated optical systems. A crucial challenge is how to maintain the performance advantage given the design space restrictions in this situation. This work proposes and demonstrates a high‐efficiency lithium niobate EO modulator with high‐permittivity cladding to improve the electric field strength in waveguides and its overlap with optical fields while maintaining low optical loss and broad bandwidth. The proposed modulator exhibits considerable improvement, featuring a low half‐wave voltage–length product of 1.41 V∙cm, a low excess loss of ≈0.5 dB, and a broad 3 dB EO bandwidth of >67 GHz. Among all the Mach‐Zehnder interferometer modulators reported thus far, the proposed modulator demonstrates notably high modulation efficiency while maintaining excellent high‐frequency performance. The design scheme of using high‐permittivity cladding may provide a promising solution for improving the integration of photonic devices on the thin‐film lithium niobate platform, and these devices may serve as fundamental components in large‐scale photonic integrated circuits in the future.

Design of a Photonic Integrated Device with an on-Chip k-Clock and Tunable Reference Arm for Swept-Source Optical Coherence Tomography

Design of a Photonic Integrated Device with an on-Chip k-Clock and Tunable Reference Arm for Swept-Source Optical Coherence Tomography