Integration Of Compound Semiconductors Research Articles

A diverse printed future

An approach that entails printing compound-semiconductor ribbons on a silicon substrate offers the means to build nanoscale transistors that can be switched on and off much more effectively than their bulk analogues. See Letter page 286 Compound semiconductor materials such as gallium arsenide and indium arsenide have outstanding electronic properties, but are costly to process and cannot, on their own, compete with silicon when it comes to low-cost fabrication. But as the relentless miniaturization of silicon electronics is reaching its limits, an alternative route of enhanced device performance is becoming more attractive: the integration of compound semiconductors within silicon. Ali Javey and colleagues now present a promising new concept to integrate ultrathin layers of single-crystal indium arsenide on silicon-based substrates with an epitaxial transfer method, a technique borrowed from large-area optoelectronics. With this technique, involving the use of an elastomeric stamp to lift off indium arsenide nanowires and transfer them to a silicon-based substrate, the authors fabricate thin film transistors with excellent device performance.

Transistor Level Integration of Compound Semiconductor Devices and CMOS (CoSMOS

ABSTRACTIn the COSMOS program, HRL Laboratories, LLC. is developing technology for intimate integration of CMOS devices with 400 GHz InP HBTs to form complex integrated circuits. This research is investigating innovative approaches to the transistor-scale integration of compound semiconductor and silicon-based transistors so as to enable revolutionary advances in science, devices, circuits, and systems.