Integrated Quantum Photonic Circuits Research Articles

Polarization entanglement generation in silicon nitride waveguide-coupled dual microring resonators.

Polarization-entangled photon pair sources exhibiting nonlocal quantum correlations are crucial to developments of quantum computing, quantum communications, quantum cryptography, and quantum sensing technologies. On-chip polarization entanglement generation thus constitutes one enabling component for integrated quantum photonic circuits. Here, we present to our knowledge the first polarization-entangled photon pair sources in a silicon nitride platform for integrated quantum photonic circuits. We demonstrate the generation of a polarization-entangled state by adopting a configuration comprising dual microring resonators, with nearly degenerate transverse electric and transverse magnetic polarized cavity resonances for the two resonators coupled in series to a common bus waveguide. We measure two-photon interference and quantum state tomography to characterize the polarization entanglement of the generated state and to reconstruct the density matrix. Our experiments reveal a visibility of 96.4% ± 3.1% and of 86.7% ± 3.2% with the |H⟩ and |V⟩ bases, respectively (and a visibility of 89.4% ± 6.6% and 81.3% ± 7.3% with the |D⟩ and |A⟩ bases), and a fidelity of ∼75.7% from the tomographic reconstructed density matrix.

Nano antenna-assisted quantum dots emission into high-index planar waveguide

Integrated quantum photonic circuits require the efficient coupling of photon sources to photonic waveguides. Hybrid plasmonic/photonic platforms are a promising approach, taking advantage of both plasmon modal confinement for efficient coupling to a nearby emitter and photonic circuitry for optical data transfer and processing. In this work, we established directional quantum dot (QD) emission coupling to a planar TiO2 waveguide assisted by a Yagi-Uda antenna. Antenna on waveguide is first designed by scaling radio frequency dimensions to nano-optics, taking into account the hybrid plasmonic/photonic platform. Design is then optimized by full numerical simulations. We fabricate the antenna on a TiO2 planar waveguide and deposit a few QDs close to the Yagi-Uda antenna. The optical characterization shows clear directional coupling originating from antenna effect. We estimate the coupling efficiency and directivity of the light emitted into the waveguide.

SiN integrated photonic components in the visible to near-infrared spectral region.

Integrated photonics has emerged as one of the most promising platforms for quantum applications. The performances of quantum photonic integrated circuits (QPIC) necessitate a demanding optimization to achieve enhanced properties and tailored characteristics with more stringent requirements with respect to their classical counterparts. In this study, we report on the simulation, fabrication, and characterization of a series of fundamental components for photons manipulation in QPIC based on silicon nitride. These include crossing waveguides, multimode-interferometer-based integrated beam splitters (MMIs), asymmetric integrated Mach-Zehnder interferometers (MZIs) based on MMIs, and micro-ring resonators. Our investigation revolves primarily around the visible to near-infrared spectral region, as these integrated structures are meticulously designed and tailored for optimal operation within this wavelength range. By advancing the development of these elementary building blocks, we aim to pave the way for significant improvements in QPIC in a spectral region only little explored so far.

Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits.

We report the nanofabrication and characterization of optical spot-size converter couplers based on curved GaAs cantilever waveguides. Using the stress mismatch between the GaAs substrate and deposited Cr-Ni-Au strips, single-mode waveguides can be bent out-of-plane in a controllable manner. A stable and vertical orientation of the out-coupler is achieved by locking the spot-size converter at a fixed 90 ∘ angle via short-range forces. The optical transmission is characterized as a function of temperature and polarization, resulting in a broad-band chip-to-fiber coupling extending over 150 nm wavelength bandwidth at cryogenic temperatures, with the lower bound for the coupling efficiency into the TE mode being 16±2% in the interval 900-1050 nm. The methods reported here are fully compatible with quantum photonic integrated circuit technology with quantum dot emitters, and open opportunities to design novel photonic devices with enhanced functionality.

Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications

The temperature-dependent electroluminescent properties of Ge-Diodes, especially the Ge-Zener-Emitter, with tunnel transitions are investigated. The direct band-gap behavior of Germanium below a temperature of 140 K is demonstrated, facilitated by Zener tunneling. Pulsed excitation of the Ge-Zener-Emitter results in an optical output power density of 6 μW, which is sufficient to excite quantum dots for single-photon emission. The peak energy of 0.86 eV suits the non-resonant excitation of InGaAs quantum dots at cryogenic temperatures. This paper presents a potential optical pump source for a quantum photonic integrated circuit.

Aluminum nitride waveguide beam splitters for integrated quantum photonic circuits

We demonstrate integrated photonic circuits for quantum devices using sputtered polycrystalline aluminum nitride (AlN) on insulator. On-chip AlN waveguide directional couplers, which are one of the most important components in quantum photonics, are fabricated and show the output power splitting ratios from 50:50 to 99:1. Polarization beam splitters with an extinction ratio of more than 10 dB are also realized from the AlN directional couplers. Using the fabricated AlN waveguide beam splitters, we observe Hong–Ou–Mandel interference with a visibility of 91.7%±5.66%.

Super-compact universal quantum logic gates with inverse-designed elements.

Integrated quantum photonic circuit is a promising platform for the realization of quantum information processing in the future. To achieve the large-scale quantum photonic circuits, the applied quantum logic gates should be as small as possible for the high-density integration on chips. Here, we report the implementation of super-compact universal quantum logic gates on silicon chips by the method of inverse design. In particular, the fabricated controlled-NOT gate and Hadamard gate are both nearly a vacuum wavelength, being the smallest optical quantum gates reported up to now. We further design the quantum circuit by cascading these fundamental gates to perform arbitrary quantum processing, where the corresponding size is about several orders smaller than that of previous quantum photonic circuits. Our study paves the way for the realization of large-scale quantum photonic chips with integrated sources and can have important applications in the field of quantum information processes.

Chiral topological add–drop filter for integrated quantum photonic circuits

The integration of quantum emitters within topological nanophotonic devices enables the control of light–matter interactions at the single photon level. Here, we experimentally realize an integrated topological add–drop filter and observe multiport chiral emission from single photon emitters (quantum dots) embedded within the device. The filter is imprinted within a valley-Hall photonic crystal membrane and comprises a resonator evanescently coupled to a pair of access waveguides. We show that the longitudinal modes of the resonator enable the filter to perform wavelength-selective routing of light, protected by the underlying topology. Furthermore, we demonstrate that for a quantum dot located at a chiral point in the resonator, selective coupling occurs between well-defined spin states and specific pairs of the filter output ports. The combination of multiport routing, allied with the inherent nonreciprocity of the device at the single photon level, presents opportunities for the formation of complex quantum optical devices, such as an on-chip quantum optical circulator.

Exciton-polariton dynamics of the single site-controlled quantum dot-nanocavity in the coexisting strong-weak coupling regime

Deterministic positioning single site-controlled high symmetric InGaAs quantum dots (QDs) in (111)B-oriented GaAs photonic crystal cavities with nanometer-scale accuracy provides an idea component for building integrated quantum photonic circuits. However, it has been a long-standing challenge of improving cavity Q-factors in such systems. Here, by optimizing the trade-off between the cavity loss and QD spectral quality, we demonstrate our site-controlled QD-nanocavity system operating in the intermediate coupling regime mediated by phonon scattering, with the dynamic coexistence of strong and weak coupling. The cavity-exciton detuning-dependent micro-photoluminescence spectrum reveals concurrence of a trend of exciton-polariton mode avoided crossing, as a signature of Rabi doublet of the strongly coupled system. Meanwhile, a trend of keeping constant or slight blue shift of coupled exciton–cavity mode(CM) energy across zero-detuning is ascribed to the formation of collective states mediated by phonon-assisted coupling, and their rare partial out-of-synchronization linewidth-narrowing is linked to their coexisting strong-weak coupling regime. We further reveal the pump power-dependent anti-bunching photon statistical dynamics of this coexisting strong-weak coupled system and the optical features of strongly confined exciton-polaritons, and dark-exciton-like states. These observations demonstrate the potential capabilities of site-controlled QD-cavity systems as deterministic quantum nodes for on-chip quantum information processing and provide guidelines for future device optimization for achieving the strong coupling regime.

Novel Photonic Applications of Silicon Carbide.

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

Ultralow birefringent glass waveguide fabricated by femtosecond laser direct writing.

Optical waveguides prepared by femtosecond laser direct writing have birefringent properties, which can affect polarization encoding and entanglement on chips. Here, we first propose a shape-stress dual compensation fabrication scheme to decrease birefringence. Ultralow birefringent waveguides (1 × 10-9) were obtained by controlling the cross sectional shape of the main waveguide and adjusting the position of the auxiliary lines. In addition, we prepared polarization-independent directional coupler and demonstrated the evolution of polarization-independent waveguide array with different polarized light. In the future, ultralow birefringent waveguides will be widely applied in polarization encoding and entangled quantum photonic integrated circuits.

Photon-pair generation in a lossy waveguide

Abstract An on-chip quantum light source based on spontaneous four-wave mixing is an essential element for developing quantum photonic integrated circuit technology, which has the advantage of no connection loss owing to the integration of the source into photonic circuits. The waveguide-based quantum light source inevitably causes propagation loss owing to imperfections in the fabrication process, but the propagation loss effects on photon-pair generation have not been extensively studied. In this study, propagation loss effects were examined using theoretical and experimental methods. In theory, the performance of quantum light sources, such as brightness, heralding efficiency, and coincidence-to-accidental ratio, strongly depend on propagation loss. We fabricate several waveguides with a moderate propagation loss of 2.2 dB/cm to investigate the loss dependence and ascertain that the brightness, heralding efficiency, and coincidence-to-accident ratio strongly correlate with the length of the optical waveguide. The maximum coincidence-count brightness occurred at an optimization length of 1/α, where α is the absorption coefficient. In contrast, the single-count brightness shows slightly different waveguide length dependence owing to loss-induced one-photon states. We expect that the results obtained in this study will greatly assist in determining the proper waveguide length for photon-pair generation according to the source’s application fields. The results will be helpful in the development of a quantum light source suitable for practical and quantum optical integrated circuits and will lead to the development of high-fidelity quantum technologies.

Optimization of heterogeneously integrated InP-Si on-chip photonic components.

We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using existing semiconductor processing technologies. Our numerical studies reveal nearly 87% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field along a tapered geometry. The coupling efficiency of a directional dipole emission to the hybrid InP/Si waveguide is evaluated to ∼38%, which results in more than 33% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plane outcoupling configurations. In the former case, the outcoupling amounts to ∼26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 8%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 µm spectral range.

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Characterization of Quantum Grade Interconnects

Quantum grade interconnects, which includes quantum grade optical fibre links and Quantum Photonic Integrated Circuits (QPICs), are rapidly developing components central to the successful development of the Quantum Internet and Quantum Key Distribution (QKD). These interconnects will present new metrological challenges that need to be addressed to ensure key support of future scientific and industrial development. Potential metrological solutions evolving alongside associated standardisation will ensure success and reliability of this advanced technology and provide key support to future scientific research and industrial manufacturing.

Unidirectional efficient hybrid coupler for an integrated single-photon source

Hybrid integrated quantum photonic circuits possess the potential to scale up the number of quantum nodes with distributed quantum-information-processing units at affordable resources. One of the key requirements is to achieve high-efficiency and unidirectional coupling of single quantum emitters into the low loss dielectric photonic waveguide modes. Plasmonic waveguides have the capability to have high coupling efficiency due to enhanced light–matter interactions. However, they suffer from significant propagation losses. Here we design and numerically demonstrate an on-chip hybrid plasmonic–photonic integrated single-photon source that enhances the emission rate of a quantum emitter and possesses unidirectional emission to a waveguide with high coupling efficiency. Currently, the emission rate of the single emitter is enhanced by a factor of 20, and the coupling efficiency from the single emitter into the photonic circuit exceeds 70%. The integrated hybrid single-photon source could find applications in quantum-information technologies.

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.

Experimental demonstration of a fast calibration method for integrated photonic circuits with cascaded phase shifters

With the development of research on integrated photonic quantum information processing, the integration level of the integrated quantum photonic circuits has been increasing continuously, which makes the calibration of the phase shifters on the chip increasingly difficult. For the calibration of multiple cascaded phase shifters that is not easy to be decoupled, the resources consumed by conventional brute force methods increase exponentially with the number of phase shifters, making it impossible to calibrate a relatively large number of cascaded phase shifters. In this work, we experimentally validate an efficient method for calibrating cascaded phase shifters that achieves an exponential increase in calibration efficiency compared to the conventional method, thus solving the calibration problem for multiple cascaded phase shifters. Specifically, we experimentally calibrate an integrated quantum photonic circuit with nine cascaded phase shifters and achieve a high-precision calibration with an average fidelity of 99.26%.

AlGaAs Nonlinear Integrated Photonics.

Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

Topologically‐Protected Single‐Photon Sources with Topological Slow Light Photonic Crystal Waveguides

AbstractSlow light waveguides are advantageous for implementing high‐performance single‐photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically‐protected optical modes has recently been demonstrated. Here, single‐photon sources are reported using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. Purcell‐enhanced single‐photon emission is demonstrated from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high‐performance single‐photon sources indispensable for IQPCs.