Integrated Protection Circuit Research Articles

The Strategy of Doubly-fed Induction Generator Low-voltage ride-through Based an Integrated Protection Circuit

Aiming at the shortcomings of single-protection circuit in the low-voltage ride-through (LVRT) process of doubly-fed induction generators (DFIG), this paper proposes an integrated protection circuit strategy for LVRT of DFIG based super-capacitor(SC). The integrated protection circuit includes a Crowbar circuit, a rotor series dynamic resistance (SDR) and SC. By adopting different protection circuits in different situations and time divisions, the LVRT capability of the DFIG is comprehensively improved, and the transient current of the rotor current during the protection circuit input is analyzed in each case. Finally, the proposed integrated protection circuit strategy is compared with the traditional single Crowbar circuit and single SDR on the simulation platform MATLAB/Simulink. The simulation results demonstrate the effectiveness of the proposed integrated protection circuit strategy.

Glass Fiber‐Reinforced Polyurethane Composite Structures with Integrated Piezoelectric Sensor Elements and Corresponding Electronics

In this contribution, process‐integrated fabrication and embedding of piezoelectric sensors based on free‐flowing starting components into glass fiber‐reinforced polyurethane composite structures and their characterization is presented. Main focus is investigating the influence of the polarization temperature on the resulting sensor properties. For this purpose, glass fiber‐reinforced polyurethane composite structures with integrated sensors are manufactured, polarized at different temperatures and then deformed by means of cyclic 3‐point bending tests. The charge signals generated by the integrated sensors are recorded by means of a specially developed measurement setup. The results show that the charges generated by the sensors can be significantly increased by polarization at elevated temperature. Furthermore, the development of associated sensor electronics is discussed and concepts as well as an implemented prototype of the integrated protection circuit for high voltage application during polarization are presented.

Highly reliable automotive integrated protection circuit for human body model ESD of +6 kV, over voltage, and reverse voltage

In this Letter, a highly reliable automotive integrated protection circuit for human body model electrostatic discharge (ESD) of + 6 kV with an over voltage of 8.2–16 V and a reverse voltage of −16 to 0 V is presented. In the automotive application, the reliability of the electronic device is important. In order to increase the reliability, a protection circuit is proposed to preserve the chip from over or reverse voltage. In contrast to the conventional comparator-based protection circuits, only MOSFET and resistors are applied in this Letter. Especially, at the reverse voltage protection mode, the potential zeroing method is applied to block the latch up and break down in the MOSFET. In addition, to protect the chip from static electricity, the ESD is combined with the protection circuit. This circuit is implemented on chip in a 0.18 µm CMOS technology and the area of the fabricated circuit is 680 × 330 µm. The proposed circuit is operated to protect the chip from external voltage between 8.2 and 16 V or between −16 and 0 V.

Doubly fed induction generator wind turbines: A novel integrated protection circuit for low-voltage ride-through strategy

This paper proposes an integrated low-voltage ride-through (ILVRT) scheme to improve the transient responses of the doubly fed induction generator (DFIG) based wind turbines. The proposed strategy integrates a series-dynamic-resistor, a dc-link chopper, and a crowbar (CRW) with a coordinated switching control strategy. Generally, when the CRW short-circuits the rotor windings, the rotor-side power converter (RSPC) is blocked and the DFIG becomes a squirrel-cage induction generator. This temporary configuration acquires its magnetization current from the grid, which leads to a more voltage-dip. On the other hand, if the CRW is combined with the series R-L circuit, the RSPC remains connected to the slip-rings, and hence, the active/reactive (P-Q) control is partially maintained. Moreover, the terminal voltage depression is reduced compared to when only the CRW scheme is applied. Following a brief discussion of two conventional LVRT strategies, the proposed ILVRT scheme is designed with an improved switching control algorithm which minimizes the CRW activation time. By applying the proposed ILVRT approach, the negative effects of the grid faults and two conventional strategies can be avoided. Finally, the performance comparison between the two conventional LVRT strategies and the proposed ILVRT scheme is conducted with the simulation results using MATLAB/Simulink software.

Protection circuit for the T2 readout electronics of the TOTEM experiment

The TOTEM experiment (TOTal and Elastic Measurement) will measure the inelastic proton–proton interaction at the Large Hadron Collider (LHC). The T2 telescope will be based on Gas Electron Multiplier (GEM) detector technology. The tight geometric requirements for the readout electronics lead to the development of a miniaturised protection circuit for the front-end readout electronics to avoid damage caused by discharges occurring in the GEM detectors. We have developed an integrated protection circuit version of the discrete protection electronics used in the COMPASS experiment (Common Muon and Proton Apparatus for Structure and Spectroscopy). We have tested successfully such integrated protection circuits by connecting them to APV25 front-end readout chips and to the first GEM detector prototype of the TOTEM experiment. All channels of the APV25 chips worked properly after more than 2000 discharges generated in the GEM detector by heavily ionising α -particles, whereas tests done without protection circuit reported full damage of the APV25 chip after a single discharge occurring in the GEM detector.

A cmos integrated driver for incandescent lamps with output power control

An integrated protection circuit to be used as a part of an intelligent power switch is presented in this paper. The circuit is designed to address the overcurrent solicitation due to incandescent lamp loads, typical in industrial and automotive environment. The circuit realizes, with a nonlinear feedback loop, an on-off switching of the load voltage as a function of the value of the load current, with the aim of keeping its mean value constant. This mechanism allows an efficient power transfer to the load, by minimizing the power dissipated on the MOS switch. Simulations and experimental measurements, carried out on a prototype chip fabricated with a 2-/spl mu/m CMOS high-voltage (50 V) process, are also shown.

Integrated protection circuit against the forward biasing of the input junction in digital MOS ICs

The paper presents a technique which prevents carrier injection into the substrate caused by a large negative-going signal applied to an AC-coupled input amplifier in digital MOS integrated circuits. The analysis of the phenomena and computer simulations of the proposed protection circuit are studied, showing that the injected charge is reduced to about 1 pC when the external coupling-capacitor charge C ΔV is equal to about 10 nC. Experimental data are shown for this circuit, which was used in an n-MOS infrared remote-control receiver IC.