Lattice-matched SiGeC with ~20% of Ge was grown at 550°C, 10 Torr on a 300 mm Si substrate in an industrial standard Reduced Pressure Chemical Vapor Deposition reactor using commercially available Si2H6/GeH4/SiH3CH3 precursors. Thicknesses exceeding 250 nm resulted in cluster formation in SiGeC with [C]Sub~2.0% and [C]Int~0.4%, with a surface density up to 6.13x106 µm-2. Room temperature photoluminescence measurements showed that the clusters were non-radiative defects and Transmission Electron Microscopy, using the ASTAR system, proved they were polycrystalline with random orientation. Cluster-free growth was achieved for 1 µm thick SiGeC with [C]Sub~1.0% and no interstitial carbon atoms, however, without lattice-matched growth on a Si substrate. Injecting HCl during a co-flow process resulted in a smooth surface with a RMS roughness of 0.23 nm and a reduction of [C]Intfrom ~0.7% down to ~0.1%, close to the detection limit of X-ray Photoelectron Spectroscopy at 0.1%. This led to a significant cluster surface density reduction down to 1.15x104 µm-2. The injection of HCl caused an increase in the Ge concentration from 19.7% up to 28.9% and a non-lattice-matched growth. A Cyclic Deposition Etch (CDE) process resulted in no [C]Int reduction, but significantly reduced the cluster surface density down to 4.60x104 µm-2. CDE-grown SiGeC was lattice-matched to the Si substrate and yielded a smooth surface with a RMS roughness of 0.22 nm. This enabled the growth of high crystalline quality, thick, lattice-matched layers on a 300 mm Si substrate with material properties beyond pure Si.