Insertion Of Layers Research Articles

Giant Charge Separation-Driving Force Together with Ultrafluent Charge Transfer in TiO2/ZnFe-LDH Photoelectrode via Ferroelectric Interface Engineering.

Hydrogen fuel production using photoelectrochemical (PEC) water-splitting technology is incredibly noteworthy as it provides a sustainable and clean method to alleviate the energy environmental crisis. A highly rapid electron shuttle at the semiconductor/WOC (water oxidation cocatalyst) interface is vital to improve the bulk charge transfer and surface reaction kinetics of the photoelectrode in the PEC water-splitting system. Yet, the inevitably inferior interface transition tends to plague the performance enhancement on account of the collision of hole-electron transport across the semi/cat interface. Herein, we address these critical challenges via inserting ferroelectric layer BTO (BaTiO3) into the semi/cat interface. The embedded polarization electric field induced by ferroelectric BTO remarkably pumped hole transfer at the semiconductor/WOC (TiO2/ZnFe-LDH) interface and selectively tailored the electronic structure of LDH surface-active sites, leading to overwhelmingly improved surface hole transfer kinetics at LDH/electrolyte interface, which minish the electron-hole recombination in bulk and on the surface of TiO2. The TiO2 nanorods encapsulated by ferroelectric-assisted ZnFe-LDH achieve 105% charge separation efficiency improvement and 53.8% charge injection efficiency enhancement compared with pure TiO2. This finding offers a strategic design for electrocatalytic-assisted photoelectrode systems by ferroelectric-pumped charge extraction and transfer at the semiconductor/WOC interface.

Improved hole injection for AlGaN-based DUV LEDs with graded-composition multiple quantum barrier insertion layers

The primary impediments to achieving high external quantum efficiency (EQE) and light output power (LOP) in AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) are inadequate hole injection efficiency and pronounced electron leakage. The significant polarization-induced positive charges, originating from the discontinuity in the Al composition between the last quantum barrier (LQB) and electron-blocking layer (EBL), attract electrons, consume holes, and reflect holes back into the p-type region, leading to severe electron leakage and low hole injection efficiency. In this paper, we introduce a graded-composition multiple quantum barrier (GQB) structure at the LQB/EBL interface. We adjust the Al composition in the insertion layer to alter the electrical polarity of the polarization-induced sheet charges, thereby modifying the electric field distribution in the EBL, LQB, and inserted GQB structure. Consequently, holes acquire boosted energy during their migration towards the active region. In addition, we enhance the hole injection and electron confinement ability via reducing the effective valence band barrier height and increasing the effective conduction band barrier height, thus diminishing the possibility of electron leakage from the active region into the p-type region. Therefore, the GQB structure proposed in this study provides a promising approach to improving the optical and electrical performance of DUV LEDs.

Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

AbstractThe monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growth. In this study, the efficiency of a structure, combining III‐Sb‐based insertion layers and thermal annealing is evaluated, on the reduction of the emerging TDD in GaSb buffer layers grown on Si(001) substrates by molecular beam epitaxy. the impact of the thickness, composition, and number of the insertion layers is extensively explored. Then a detailed study of the annealing cycles with different conditions is conducted. A record TDD in the low 107 cm−2 for a 2.25 µm GaSb buffer grown on Si(001) is ultimately demonstrated.

Study on the Mechanism of Bubble Defects in the PECVD Amorphous Silicon Films on Dielectric Substrate

The amorphous silicon (a-Si) grown by plasma enhanced chemical vapor deposition (PECVD) has been widely applied in advanced semiconductor devices. However, it still suffers from the bubble defects when the deposition temperature goes above 450 °C. In this work, we have investigated the influence of underlying materials on the formation of bubbles of a-Si. The a-Si was deposited on different dielectric substrates, including silicon nitrides (SiN) and silicon dioxide (SiO2), using PECVD technique at a substrate temperature of 500 °C. A large number of bubbles of the a-Si has been observed on the thermal ALD deposited SiN underlayer, and some of them even burst. In contrast, no bubble defects were observed at the a-Si grown on PECVD SiN and PECVD SiO2 films. Such deviation may be attributed to the quality of the underlying material, which induces the H/H2 diffusion during the growth of a-Si and results in bubbles. A solution based on the model has been used to suppress the formation of such bubbles. An inserting layer of SiO2 was introduced in between SiN and a-Si to improve the density of the lower layer material and the adhesion between the two materials. As a result, there is no bubble defects at the surface of a-Si observed using optical microscope. Our work reveals the mechanism of the formation of bubble defects and paves a new method to eliminate the bubbles defects and to form high-quality a-Si, which shows potential in the manufacture of semiconductor devices.

Achieving nearly 70 cm2/V·s field-effect mobility in single amorphous Ga-In-ZnO thin-film transistors deposited by sputtering process via intermediate patterned metal layer insertion

In this study, we introduce a novel method for enhancing the mobility of amorphous Ga-In-Zn-O (a-GIZO) thin-film transistors (TFTs) by incorporating a patterned metal layer within the a-GIZO single channel. The patterned metal layer comprises either a single layer of aluminum or a combination of aluminum and gold as the bottom and top layers, respectively. TFTs with a single aluminum layer achieved a field-effect mobility of 40.15 cm2/V∙s, significantly higher than the 16.22 cm2/V∙s of standard a-GIZO TFTs. This enhancement is attributed to aluminum’s low Gibbs free energy, which increases oxygen vacancies in the a-GIZO layer and thus improves carrier mobility. Furthermore, when a patterned dual-metal layer consisting of aluminum as the bottom layer and gold as the top layer is used, a field-effect mobility of 69.46 cm2/V∙s is achieved. This improvement is attributed to the low electrical resistivity of gold, which prevents oxidation between the upper gold layer and the a-GIZO layer deposited by sputtering process. Furthermore, this mechanism facilitates the enhancement of the reaction with a lower a-GIZO layer. The unique characteristics of gold prevent oxidation between the a-GIZO and gold interface, thereby promoting favorable interactions between Al and the underlying a-GIZO layer. Our findings demonstrate that strategically inserted patterned metal layers can significantly boost mobility of a single a-GIZO TFT while maintaining device stability, offering a promising approach for advanced display technologies.

Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire

Integration of gallium oxide (Ga2O3) with highly thermal conductive AlN/sapphire substrate is more effective to dissipate heat in the Ga2O3-based devices. In this work, the properties of Ga2O3 films grown on sapphire and AlN/sapphire substrates via MOCVD were both examined via various experimental methods. The X-ray diffraction (XRD) analysis showed good crystallinity and different orientations of Ga2O3 and AlN thin films. The absorption properties and band gaps were extracted from UV/Vis spectra. The atomic force microscopy (AFM) scanning images showed smooth Ga2O3 surfaces on sapphire and AlN/sapphire substrates (RMSs of 2.4 nm and 4.8 nm, respectively). The scanning electron microscopy (SEM) highlighted well-defined grains of Ga2O3 and distinct boundaries of both heterostructures. X-ray photoelectron spectroscopy (XPS) analysis depicted the distributions of various components throughout the films. Finally, by using the time-domain thermoreflectance (TDTR) method, the thermal conductivity and the thermal boundary conductivity of Ga2O3 without AlN interlayer were found to be 3.1 W/(m·K) and 70.1 MW/(m2·K) respectively. By comparison, adding AlN interlayer made the thermal conductivity and thermal boundary conductivity rise to 3.3 W/(m·K) and 111.5 MW/(m2·K) respectively. These findings have demonstrated the high-quality Ga2O3/AlN integration and good heat dissipation provided by AlN interlayer, opening up new prospects for Ga2O3/AlN devices in the future.

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing

AbstractMemristors are recognized as crucial devices for the hardware implementation of neuromorphic computing. The conductance training process of memristors has a direct impact on the performance of neuromorphic computing. However, memristor breakdown and conductance decay still hinder the precise training process of neural networks based on passive memristor. Here, AlOx/LiNbO3 (LN) memristors are designed by inserting a AlOx sub‐oxide layer between the single‐crystalline LN thin film with oxygen vacancies (OVs) and Pt layer. Under the same training conditions, lower conductance and self‐compliance current effects are observed in AlOx/LN memristor. Slight spontaneous decay of conductance is achieved after the removal of the external stimulation. To explore the effects of AlOx sub‐oxide layer on the prevention of device breakdown and suppression of conductance decay, the memristive mechanism of devices with and without AlOx layer is revealed via time‐of‐flight secondary ion mass spectrometer (ToF‐SIMS). It is reasonable to believe that the AlOx inserting layer in memristors can serve as a self‐compliance current layer to inhibit device breakdown and provide the OVs reservoir to suppress conductance decay. These results offer new possibilities and theoretical grounds for achieving more reliable and precise conductance training of passive memristors.

Early warning system for floods at estuarine areas: combining artificial intelligence with process-based models

AbstractFloods are among the most common natural disasters, causing countless losses every year worldwide and demanding urgent measures to mitigate their impacts. This study proposes a novel combination of artificial intelligence and process-based models to construct a flood early warning system (FEWS) for estuarine regions. Using streamflow and rainfall data, a deep learning model with long short-term memory layers was used to forecast the river discharge at the fluvial boundary of an estuary. Afterwards, a hydrodynamic process-based model was used to simulate water levels in the estuary. The river discharge predictors were trained using different forecasting windows varying from 3 h to 36 h to assess the relationship between the time window and accuracy. The insertion of attention layers into the network architecture was evaluated to enhance forecasting capacity. The FEWS was implemented in the Douro River Estuary, a densely urbanised flood-prone area in northern Portugal. The results demonstrated that the Douro Estuary FEWS is reliable for discharges up to 5000 m3/s, with predictions made 36 h in advance. For values higher than this, the uncertainties in the model predictions increased; however, they were still capable of detecting flood occurrences.

Failure Mechanism Analysis and Emerging Strategies for Enhancing the Photoelectrochemical Stability of Photoanodes.

The development of efficient and stable photoanode materials is essential for driving the possible practical application of photoelectrochemical water splitting. This article begins with a basic understanding of the fundamentals of photoelectrochemical devices and photoanodes. State-of-the-art strategies for designing photoanodes with long-term stability are highlighted, including insertion of hole transport layers, construction of protective/passivation layers, loading of co-catalysts, construction of heterojunctions, and modification of the electrolyte. Based on the insights gained from these effective strategies, we present an outlook for addressing key aspects of the challenges of stabilizing photoanodes development in the future work. Widespread adoption of stability assessment criteria will facilitate reliable comparisons of results from different laboratories. In addition, deactivation of photoanode is defined as a 50 % reduction in productivity. An in-depth understanding of the deactivation mechanism is essential for the design and development of efficient and stable photoanodes. This work will provide insights into the stability assessment of photoanode and facilitate the production of practical solar fuels.

Large Chiral Orbital Texture and Orbital Edelstein Effect in Co/Al Heterostructure.

Recent experiments by S. Krishnia et al. [Nano Lett. 2023, 23, 6785] reported an unprecedentedly large enhancement of torques upon inserting thin Al layer in Co/Pt heterostructure that suggested the presence of a Rashba-like interaction at the metallic Co/Al interface. Based on first-principles calculations, we reveal the emergence of a large helical orbital texture in reciprocal space at the interfacial Co layer, whose origin is attributed to the orbital Rashba effect due to the formation of the surface states at the Co/Al interface and where spin-orbit coupling is found to produce smaller contributions with a higher-order winding of the orbital moments. Our results unveil that the orbital texture gives rise to a nonequilibrium orbital accumulation producing large current-induced torques, thus providing an essential theoretical background for the experimental data and advancing the use of orbital transport phenomena in all-metallic magnetic systems with light elements.

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO2–SnO2–TiO2 with ultrathin Al2O3 insertion layer by plasma-enhanced atomic layer deposition

Abstract Flexible metal–insulator–metal (MIM) capacitors of high-k nanolaminate HfO2–SnO2–TiO2 thin films were fabricated on several polymer substrates of polyethylene terephthalate, polyimide and epoxy resin at 80 °C by plasma-enhanced atomic layer deposition. The electrical properties were optimized by adjusting the sub-cycle ratio of Hf: Sn: Ti to 6: 5: 4. In order to reduce the leakage current density of flexible capacitors, the ultrathin Al2O3 layer varying from 0.5 to 1.5 nm was inserted to form Al2O3/HfO2–SnO2–TiO2/Al2O3 stacking capacitors. The effect of the Al2O3 insertion layer thickness and the super-cycle number of HfO2–SnO2–TiO2 on the capacitance density, leakage, and quadratic voltage linearity was investigated. Under optimal processing, flexible MIM capacitors could stand 40 000 bending cycles at curvature radius of 8.2 mm, indicative of better electrical stability. Moreover, compared with the polymer-based HfO2–SnO2–TiO2 capacitors, the introduction of 1 nm Al2O3 ultrathin layer greatly decreases the leakage current density by 4 orders of magnitude (10−8 A cm−2) with relative lower voltage linearity (350–540 ppm V−2), but the capacitance density also declines (∼3 fF μm−2) simultaneously. Despite this, the method of inserting Al2O3 ultra-thin layer is still an effective method to improve the electrical performances of polymer-based HfO2–SnO2–TiO2 nanolaminate capacitors for flexible electronics.

Manipulating Charge-to-Spin conversion via insertion layer control at the interface of topological insulator and ferromagnet

Strong spin–orbit coupling and highly spin-polarized surface states in topological insulators (TIs) are key parameters that explain their extremely high charge-to-spin conversion (CSC) efficiency at interfaces with ferromagnetic materials (FMs). This study focused on the influence of the insertion layer on the proximity effect occurring in a Co4Fe4B2/Bi2Se3 interface. Various insertion layers, including Au, MgO, and Se, were introduced to modulate the proximity effect from TI to FM and vice versa. X-ray photoelectron spectroscopy and transmission electron microscopy revealed that the Se insertion layer effectively suppresses the formation of an additional Bi layer, reducing intermixing against Co4Fe4B2. Electrical transport properties such as RXX and RXY under a vertical magnetic field show that the Se-inserted structure features the lowest anomalous Hall angle and exhibits a pristine topological surface state, indicating its potential for improving CSC efficiency. The Se-inserted structure exhibits the highest spin Hall angle among various heterostructures, according to results obtained from spin-torque ferromagnetic resonance. These findings highlight the importance of selecting an insertion layer and controlling the interface to optimize the spin-transport properties of TI-based spintronic devices and provide insights into the design of future spin devices.

Highly efficient 2D transition metal Dichalcogenides/SnSe solar cells using Sb2S3 as a back surface field and interfacial layer engineering

Boosting the performance of solar cells is crucial for advancing photovoltaic technology. This study investigates the integration of alternative 2D materials to enhance the performance of solar cells. Three solar cell configurations sample 1 with CdS, sample 2 with MoS2, and sample 3 with SnS2 are systematically investigated via numerical simulation. The simulation framework is validated against experimental data, demonstrating good agreement. Alternative 2D materials are explored to replace toxic CdS and improve the Voc through suitable band alignment with the absorber material, SnSe. Additionally, Sb2S3 is introduced as a back surface field (BSF) for the first time, resulting in increased efficiencies across all three samples. Further performance enhancements involve the insertion of 2D interfacial layers between the electron transport layer (ETL) and absorber to mitigate interface defects. Thirteen materials are evaluated as interfacial layers and nine metals as back contacts, revealing Ni as the optimal back contact for all samples, while MoS2, SnS2, and WS2 are identified as suitable interfacial layers for samples 1, 2, and 3, respectively. Analysis of the solar cells reveals that sample 2, incorporating MoS2 and SnS2, achieves the highest efficiency at 13.58 %. This outperforms sample 3 at 13.55 % and sample 1 at 13.13 %. Sample 2′s superior performance is attributed to the effective utilization of 2D transition metal dichalcogenide (TMDC) materials, which enhance charge carrier transport and minimize recombination losses within the cell structure. Optimized solar cell configurations are modeled using a one-diode approach to build corresponding modules. These modules, created by connecting solar cells in series and parallel, are evaluated through simulated I-V characteristics and power output under standard test conditions. Analysis reveals that Module 2 exhibits superior performance, with higher short-circuit current (ISC) and open-circuit voltage (VOC) compared to Modules 1 and 3. Overall, this study demonstrates the significant role of 2D TMC materials in advancing solar cell performance, providing valuable insights for future solar energy applications.

Superior Energy Storage Performances of Aurivillius Relaxor Ferroelectric Films at Medium Electric Field Derived from Insert Layer Engineering

Superior Energy Storage Performances of Aurivillius Relaxor Ferroelectric Films at Medium Electric Field Derived from Insert Layer Engineering

Evolution of static and dynamic magnetic properties of Re/Co/Pt and Pt/Co/Re trilayers with enhanced Dzyaloshinskii-Moriya interaction

The influence of Re layer insertion either at the bottom or top interface of epitaxially grown Pt/Co/Pt heterostructures on their static and dynamic magnetic properties is discussed in terms of their crystalline structure. Magnetic properties were studied as a function of both Re and Co layer thicknesses (dRe and dCo, respectively) in the matrix-like samples with a double-wedge structure, in which the layer thickness gradients were oriented orthogonally. The comprehensive investigations of the changes in coercivity, perpendicular magnetic anisotropy, spin reorientation transition, interfacial Dzyaloshinskii-Moriya interaction (iDMI) and spin wave damping are reported. Two different magnetic phases depending on the Co layer thickness with volume anisotropies (determined without demagnetization term) of KV∼0.25 (low) and KV∼0.75 MJ/m3 (high) were observed. The relation between these phases depends on the stack sequence and thickness of Re inserted layer. For dRe = 0.2 ÷ 0.7 nm deposited as the bottom interface, dCo induced transition at dtr ∼ 2 nm from low to high volume anisotropy phases was observed. Low and high volume anisotropy phases are associated to Co fcc and hcp structural phases. The insertion of half atomic layer of Re had no influence on surface anisotropy but significantly enhanced iDMI above 1 pJ/m and reduced spin wave damping.

Study of resistive properties and neural response of ZrO2/TiO2 heterojunction nanowire array (NWA) RRAM

Nowadays, the researcher has an eye on enhancing the performance of resistive random-access memory (RRAM) and exploring new demands and applications, particularly in the field of artificial intelligence and neural computing. It is crucially important for accurately replicating the observed plasticity within synapses to achieve superior RRAM performance in low-dimensional nanomaterials. In this work, we focus on addressing certainly unsatisfactory electrical properties of RRAM based on titanium oxide nanowire array (TiO2 NWA), for example, short retention time (∼103 s). Theoretically and experimentally, a novel and solution-based RRAM structure, namely ZrO2/TiO2(NWA), has been conducted. With the help of the ZrO2 insertion layer, the RRAM device shows impressive resistive switching characteristics, including 200 current–voltage(I-V) sweeps without degradation, increased cycling endurance (>105 cycles), and a long retention time (∼9 × 104 s). These findings hold significant implications for digital computing systems. Moreover, the successful implementation of the proposed device enables the emulation of fundamental synaptic biological features such as non-linear transmission properties, learning experiences behavior, short-term potentiation (STP) and long-term potentiation (LTP). This research provides evidence of the immense potential of the Ag/ZrO2/TiO2(NWA)/FTO RRAM device in bipolar non-volatile memory (NVM) and biomimetic neuromorphic systems.

Achieving high sheet resistance and near-zero temperature coefficient of resistance in NiCr film resistors by Al interlayers

Thin film resistive materials with low temperature coefficients of resistance (TCR) and high sheet resistances are essential for various electronic applications, such as embedded resistors. In this study, Al inserting layers and NiCr resistive layers were sequentially deposited on alumina ceramic substrates via DC magnetron sputtering to fabricate Al/NiCr bilayer resistive materials. The electrical properties of the bilayer films were adjusted by varying the thicknesses of the Al inserting layers and annealing conditions. When the thickness of the Al inserting layer varied from 5 to 7.5 nm, and post-annealing treatments ranging from 200℃ to 400℃ were applied, evident Al-NiCr interdiffusion occurred, forming intermediate layers at the interfaces and oxides on the film surfaces. A mixture of partial crystalline phases and amorphous phases was also observed in the cross-sectional high-resolution transmission electron microscope (HRTEM) images. The formation of intermediate layers and surface oxides and the balance between partial crystalline phases and amorphous phases collectively enhanced the electrical performance of bilayer film resistors, achieving thin film resistors with a remarkably low TCR of −6.61 ppm/K and a sheet resistance of up to 265.95 Ω/sq. By rational design of Al layers, NiCr layers and thermal treatment, thin film resistors with near zero TCRs and extremely wide sheet resistance range of 93.34–1439.01 Ω/sq can be obtained.

Resistive switching and synaptic characteristics of Hf-doped ZnO sandwiched between HfO2-based memristors for neuromorphic computing

With the rise of neuromorphic computing, memristors have attracted much attention as a device with potential synaptic properties. In this paper, we investigated the embedding of Hf-doped ZnO (Hf:ZnO) layers with different doping concentrations in HfO2-based memristors to design HfO2/(0 %-10 %)Hf:ZnO/HfO2 tri-layer structured memristors for resistive switching (RS) and synaptic characteristics. Utilizing first-principles calculations, we integrated assessments of both oxygen vacancy migration capability and material conductivity to evaluate the rationale behind our design. The experimental results show that the HfO2/(5 %)Hf:ZnO/HfO2 tri-layer structured memristor presents the best RS performance, with a storage window of 103. We analyze the impact of insertion layers with varying doping concentrations on the RS performance of the devices and elucidate the RS mechanism. In addition, we investigated the synaptic properties of HfO2/(5 %)Hf:ZnO/HfO2 tri-layer structured memristor, and effectively simulated synaptic plasticity akin to the synaptic behavior found in biological neurons. Finally, we also constructed a memristor-based Spiking Neural Network for recognizing the Mixed National Institute of Standards and Technology handwritten digit dataset, achieving a recognition accuracy of 82 %. This comprehensive study shows that the insertion of (5 %)Hf:ZnO into HfO2-based memristors holds significant promise for upcoming applications in the field of neuromorphic computing.

Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device.

Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new-generation flexible (opto-)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation-transfer of high-uniform and quality-enhanced MoS2 via the precursor pre-annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2-inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation-transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86mAW-1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation-transfer strategy lightens their significance for advances in curved and wearable (opto-)electronic applications.

Enhancement of electrical properties by CuS–PVP nanocomposite on the ZnO/polymer heterojunction

AbstractA nanocomposite matrix of covellite–polyvinylpyrrolidone (CuS–PVP) was synthesized through a solution processing method and applied via spin coating onto hydrothermally grown zinc oxide (ZnO) nanorods. Characterization techniques, including X‐ray powder diffraction and scanning electron microscopy, confirmed the successful decoration of chain‐like CuS–PVP polymer composites onto hexagonal ZnO nanorods. The UV‐vis spectroscopy revealed an absorption peak at 372 nm, indicating excitonic absorption of ZnO, and a reduction in the band gap from 3.11 to 2.59 eV upon CuS–PVP polymer decoration, enhancing light harvesting efficiency. Photoluminescence spectra demonstrated the lowest charge carrier recombination rate in the ZnO/CuS–PVP sample, promoting efficient charge separation and transportation, supported by Fourier‐transform infrared analysis indicating chemical bonding. Subsequently, the impact of CuS–PVP as an insertion layer in the ZnO/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) inorganic–organic heterojunction was investigated. Favorable band alignment between ZnO, CuS–PVP, and PEDOT:PSS improved conduction, increasing current from 0.3394 to 1.14 mA for D2 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/PEDOT:PSS/Al) and D1 (poly‐ethyleneterephthalate/Indium tin oxide/ZnO/CuS–PVP/PEDOT:PSS/Al) at a +2 V bias. Transient photo‐responses (J–t) at 0 V bias revealed decreased rise and fall times from 0.382 and 1.154 s to 0.301 and 0.229 s for D2 and D1 devices, respectively. This novel approach provides control over charge carrier transport characteristics at the interface, potentially benefiting self‐powered photo‐detection in optoelectronic devices.