Injection-locked Semiconductor Ring Lasers Research Articles

Design and Analysis of Injection Locked Semiconductor Ring Laser

Design and Analysis of Injection Locked Semiconductor Ring Laser

Dependence of Modulation Bandwidth on Size of Optical Injection Locked Semiconductor Ring Laser

It has been successfully investigated for the rst time that strength of optical injection locking also depends on the size of semiconductor ring laser. Theoretical study for frequency response of optical injection locking semiconductor ring laser in the master slave con guration using direct, amplitude and phase modulation of master laser is discussed. In the unidirectional regime the locking range of semiconductor ring laser becomes wider when semiconductor ring laser with smaller size is used. Simulation results predict an incredible enhancement in the modulation bandwidth (> 500 GHz) of the slave semiconductor ring laser when used with smaller laser cavity length (50 μm) in the stable unidirectional regime.

Noise Response and Stability in Injection Locked Semiconductor Ring Laser

Stability and e ects of optical injection locking in semiconductor ring laser is modeled in detail. It is veri ed that the injection locking in slave semiconductor ring laser depends on detuning frequency and external optical injection ratio between the master laser and the slave semiconductor ring laser. The stability of injection was locked using the resonance frequency and damping factor. The parasitic phase modulation response due to amplitude modulation (chirp response) is derived and simulated. Similarly parasitic amplitude modulation due to phase modulation response is also investigated.

A Numerical Study of Cavity Enhanced Inter-Modal Four Wave Mixing in Injection-Locked Semiconductor Ring Lasers

Mode beating via third order nonlinearity in semiconductor ring lasers has been analyzed using a frequency-domain multimode rate equation model. Compared with Fabry-Perot lasers, semiconductor ring lasers are 1.33, 2, and 4 times more efficient in self-gain compression, cross-gain compression, and four-wave mixing processes, respectively, due to its travelling-wave nature. It is shown that, using dual (pump and signal) external optical injections into the ring laser cavity, multiple modes can be locked in phase via the strong four wave mixing phenomenon. This results in modulation of the light wave at the mode beating frequencies which could be used for RF optical carrier generation.

High-Speed Modulation Analysis of Strongly Injection-Locked Semiconductor Ring Lasers

A novel scheme for modulation bandwidth enhancement is presented, involving distributed Bragg reflector master laser monolithically integrated with strongly injection-locked whistle-geometry microring laser. Enhanced high-speed performance of the novel scheme is confirmed through numerical modeling by comparing it with an earlier scheme, where optical injection was provided by a waveguide directional coupler adjacent to the ring laser.